S. Seo

发表

Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

S. O. Park, I. Baek, M.S. Lee, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Kinam Kim, S. Seo, D. Seo, 2011, Nature materials.

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

I. Baek, M.S. Lee, S. Seo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

S. O. Park, I. Baek, S. Seo, 2006 .

Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control

S. Seo, I. Yoo, Myoung-Jae Lee, 2007 .

Reproducible resistance switching in polycrystalline NiO films

S. Seo, D. Seo, D. Suh, 2004 .

Conductivity switching characteristics and reset currents in NiO films

S. H. Kim, S. Seo, D. Seo, 2005 .

Random Circuit Breaker Network Model for Unipolar Resistance Switching

B. Kahng, S. Seo, T. Noh, 2008 .

Scaling behaviors of reset voltages and currents in unipolar resistance switching

J. S. Lee, S. Chang, B. Kahng, 2008, 0810.4043.

Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes

S. Seo, Myoung-Jae Lee, B. Park, 2009 .

Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12

S. Seo, B. Kang, T. Noh, 2002 .

Improved Distribution of Resistance Switching Through Localized Ti-Doped NiO Layer With InZnOx/CuOx Oxide Diode

S. Seo, D. Seo, Myoung-Jae Lee, 2018, IEEE Journal of the Electron Devices Society.

Scaling behaviors of reset voltages and currents in unipolar resistance switching

J. S. Lee, B. Kahng, S. Seo, 2008, 0810.4043.

Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

J. S. Lee, B. Kahng, S. Seo, 2008, 0810.0886.

Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors

S. Seo, B. Kang, T. Noh, 2002 .

Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

S. Seo, G. Park, D. Kwon, 2010 .

Resistive memory switching in epitaxially grown NiO

Kookheon Char, Gyeong-Su Park, S. Seo, 2007 .

The structural and electrical evolution of graphene by oxygen plasma-induced disorder

S. Seo, J. Shin, D. Jeon, 2009, Nanotechnology.

Polarization dynamics and retention loss in fatigued PbZr0.4Ti0.6O3 ferroelectric capacitors

S. Seo, B. Kang, T. Noh, 2003 .

High Resistance Against Hydrogen-Induced Degradation in Ferroelectric Bi3.25La0.75Ti3O12 Thin Films

S. Seo, C. J. Kim, B. Kang, 2002 .

Hydrogen-Induced Degradation Mechanisms in Ferroelectric PbZr0.4Ti0.6O3 and Bi3.25La0.75Ti3O12 Thin Films

S. Seo, B. Kang, T. Noh, 2002 .

The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy

Chi Jung Kang, Dae-Young Jeon, S. Seo, 2009 .

Properties of Nickel Oxide Films by DC Reactive Sputtering

S. Seo, D. Seo, I. Yoo, 2004 .

Improvement of resistive memory switching in NiO using IrO2

U-In Chung, In-Gyu Baek, Hae-Sung Kim, 2006 .

A New Candidate Material for Use in Ferroelectric Random Access Memory (Fram)

S. Seo, B. Kang, B. Park, 2002 .

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

Sangik Lee, Keundong Lee, Sunae Seo, 2015, Scientific Reports.

Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

Jae Hyuck Jang, S. Seo, K. Char, 2012 .

Thickness-dependent resistance switching in Cr-doped SrTiO3

S. Seo, B. Park, I. Hwang, 2012 .

Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

J. S. Lee, B. Kahng, S. Seo, 2008, 0801.3323.

Random and localized resistive switching observation in Pt/NiO/Pt

Jiyoung Kim, Sunae Seo, Seung-Eon Ahn, 2007 .

Structural Properties and Resistance-Switching Behavior of Thermally Grown NiO Thin Films

S. Seo, B. Park, R. Jung, 2008 .

Resistance switching characteristics in Li-doped NiO

Jin-Soo Kim, Hyunsik Im, Sunae Seo, 2008 .

Investigation on Resistive Memory Switching Mechanism of NiO

S. O. Park, I. Baek, S. Seo, 2007 .

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

Sunae Seo, Gyeong-Su Park, Myoung-Jae Lee, 2007 .

Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures

S. Seo, B. Park, R. Jung, 2007 .

Electrode dependence of resistance switching in polycrystalline NiO films

S. Seo, I. Yoo, Myoung-Jae Lee, 2005 .

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

Seung Chul Chae, Sunae Seo, Chanwoo Park, 2008 .

Measurement of Exciton and Trion Energies in Multistacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes.

S. Seo, D. Seo, Myoung-Jae Lee, 2020, ACS nano.

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

S. H. Jeon, Jin-Soo Kim, S. H. Kim, 2007 .

Random Circuit Breaker Network Model for Unipolar Resistance Switching

B. Kahng, S. Seo, T. Noh, 2008 .

Reliable Multivalued Conductance States in TaO x Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis.

Hyunsang Hwang, Chun-Yeol You, Sung Min Kwon, 2018, ACS applied materials & interfaces.

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Young-soo Park, Jin-Soo Kim, Sunae Seo, 2007 .