M. Tsai

发表

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge0.4Se0.6 Solid Electrolyte

Frederick T. Chen, Y. S. Chen, S. Z. Rahaman, 2010 .

Ultra high density 3D via RRAM in pure 28nm CMOS process

M. Tsai, M. Hsieh, Yu-Cheng Liao, 2013, 2013 IEEE International Electron Devices Meeting.

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

Frederick T. Chen, S. Maikap, M. Kao, 2012 .

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Frederick T. Chen, C. Lin, P. Tzeng, 2008, 2008 IEEE International Electron Devices Meeting.

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

M. Tsai, T. Chao, Bae-horng Chen, 2006 .

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

Frederick T. Chen, T. Wu, P. Tzeng, 2008 .

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

Frederick T. Chen, M. Tsai, Sea-Fue Wang, 2008 .

Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation

Frederick T. Chen, T. Wu, P. Tzeng, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Silicon introduced effect on resistive switching characteristics of WOX thin films

M. Tsai, S. Sze, Ya-Hsiang Tai, 2012 .

AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application

Shimeng Yu, M. Tsai, H. Wong, 2012, 2012 4th IEEE International Memory Workshop.

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

Frederick T. Chen, H. Y. Lee, S. Maikap, 2012 .

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Frederick T. Chen, S. Maikap, M. Kao, 2012, Nanoscale Research Letters.

Resistance Switching Characteristics of TiO2 Thin Films Prepared with Reactive Sputtering

Frederick T. Chen, P. Tzeng, M. Tsai, 2009 .

Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

Frederick T. Chen, H. Y. Lee, Y. S. Chen, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM

Frederick T. Chen, M. Tsai, Weisu Chen, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

The highly scalable and reliable hafnium oxide ReRAM and its future challenges

H. Y. Lee, Y. S. Chen, M. Tsai, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Challenges and opportunities for HfOX based resistive random access memory

Frederick T. Chen, H. Y. Lee, Y. S. Chen, 2011, International Electron Devices Meeting.

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

M. Tsai, C. Lien, Weisu Chen, 2011, IEEE Electron Device Letters.

Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

M. Tsai, Li-Jung Liu, K. Chang-Liao, 2013 .

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

M. Tsai, Li-Jung Liu, K. Chang-Liao, 2012, IEEE Electron Device Letters.

Formation and instability of silver nanofilament in Ag-based programmable metallization cells.

Frederick T. Chen, M. Tsai, J. Gan, 2010, ACS nano.

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.

S. Z. Rahaman, M. Tsai, Weisu Chen, 2017, Langmuir : the ACS journal of surfaces and colloids.

Bipolar resistive switching memory using bilayer TaOx/WOx films

S. Maikap, M. Kao, M. Tsai, 2012 .

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Frederick T. Chen, Y.S. Chen, T. Wu, 2010, IEEE Electron Device Letters.

Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory

Heng-Yuan Lee, Pang-Shiu Chen, Frederick T. Chen, 2012 .

Resistance instabilities in a filament-based resistive memory

Heng-Yuan Lee, Pang-Shiu Chen, Ming-Jinn Tsai, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Ming-Jinn Tsai, Sheng-Yao Huang, Simon M. Sze, 2011 .

New observations on the regular and irregular noise behavior in a resistance random access memory

H. Y. Lee, Y. S. Chen, M. Tsai, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Reaction of interfacial layer and trapping in HfO/sub 2/ gated MOS structures

M. Tsai, T. Ma, X.W. Wang, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Via Diode in Cu Backend Process for 3D Cross-Point RRAM Arrays

M. Tsai, M. Hsieh, Yu-Cheng Liao, 2014, IEEE Journal of the Electron Devices Society.

Phase transformation in Mg–Sb thin films

M. Tsai, T. Chin, T. Yew, 2010 .

Excellent resistive switching memory: Influence of GeOx in WOx mixture

H. Y. Lee, S. Maikap, W. S. Chen, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

The chemical control of high-Tc superconductivity: Metal-superconductor-insulator transition in (Tl1−yPby)Sr2(Ca1−xYx)Cu2O7

M. Tsai, P. Edwards, Shu-Fen Hu, 1993 .

Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system

M. Tsai, Sheng-wei Lee, P. S. Chen, 2004 .

Ruthenium oxide metal nanocrystal capacitors with high- κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications

S. Maikap, P. Tzeng, M. Tsai, 2010 .

Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate

P. Tzeng, M. Tsai, B. Tsui, 2009 .

Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers

S. Z. Rahaman, S. Maikap, C. Lin, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

High Endurance Multi-gate TiN Nanocrystal Memory Devices with High-k Blocking Dielectric and High Work Function Gate Electrode

C. Lin, P. Tzeng, M. Tsai, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Cerium oxide nanocrystals for nonvolatile memory applications

M. Tsai, T. Lei, C. Chien, 2007 .

Room-temperature electroluminescence at 1.3 and 1.5 /spl mu/m from Ge/Si quantum-dot light-emitting diode

M. Tsai, Hsiang-Szu Chang, L. Lai, 2003, 2003 International Symposium on Compound Semiconductors.

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

M. Tsai, D. Shu, Chou-Sheng Wang, 2004 .

Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM

H. Y. Lee, S. Y. Yang, Y. S. Chen, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues

M. Tsai, T. Ku, R. Xuan, 2012 .

Performance Comparison and Design Issue on Different GaN Power Transistor Structures

M. Tsai, T. Ku, Young-Shying Chen, 2012 .

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

S. Maikap, P. Tzeng, M. Tsai, 2007 .

Charge storage characteristics of atomic layer deposited RuOx nanocrystals

S. Maikap, P. Tzeng, M. Tsai, 2007 .

Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

M. Tsai, S. Sze, Ting‐Chang Chang, 2014, IEEE Electron Device Letters.

RESET-Enhancing Features for Via-Heated Phase-Change Memory Cells

M. Kao, M. Tsai, F. Chen, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

IC process compatible anodic electrode structures for unipolar HfOx-based RRAM

H. Y. Lee, S. Y. Yang, Y. S. Chen, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

Frederick T. Chen, S. Maikap, M. Kao, 2012 .

Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure

Frederick T. Chen, S. Maikap, M. Kao, 2012 .

Polarity reversion of the operation mode of HfO2-based resistive random access memory devices by inserting Hf metal layer.

Frederick T. Chen, M. Tsai, Weisu Chen, 2013, Journal of nanoscience and nanotechnology.

Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode

P. Tzeng, M. Tsai, B. Tsui, 2009 .

In-line inspection on thickness of sputtered HfO/sub 2/ and Hf metal ultra-thin films by spectroscopic ellipsometry

P. Tzeng, M. Tsai, Y. Chuo, 2004, 2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846).

A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices

M. Tsai, Yao-Jen Lee, K. Chang-Liao, 2012 .

High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)

M. Tsai, P. Chen, L. Lai, 2002, Digest. International Electron Devices Meeting,.

Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

M. Tsai, Pei-Wen Li, Pang-Shiu Chen, 2004 .

Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

M. Tsai, L. Lai, Sheng-wei Lee, 2004 .

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

M. Tsai, Cheewee Liu, Sanboh Lee, 2003 .

Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Frederick T. Chen, T. Wu, M. Tsai, 2014 .

Memory Characteristics of Atomic-Layer-Deposited High-? HfAlO Nanocrystal Capacitors

S. Maikap, C. Lin, P. Tzeng, 2008 .

Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

M. Tsai, S. Sze, Ting‐Chang Chang, 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.

HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition

M. Tsai, Heng-Yuan Lee, Pang-Shiu Chen, 2007 .

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Pang-Shiu Chen, Ming-Jinn Tsai, Ching-Chiun Wang, 2009, IEEE Electron Device Letters.

Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Y. S. Chen, S. Z. Rahaman, S. Maikap, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Effect of transient annealing on patterned CoFeB‐based magnetic tunnel junctions

M. Kao, M. Tsai, L. Horng, 2007 .

Interfacial and annealing effects on magnetic properties of CoFeB thin films

Ming-Jinn Tsai, Ming-Jer Kao, Kuei-Hung Shen, 2006 .

The defect structure and transport properties of some high Tc superconductors

M. Tsai, 1990 .

Formation of NiSi-silicided shallow p+n junctions by BF2+ implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal

M. Tsai, M. Juang, M. Hu, 1998 .

Defects and Transport in YBa2 Cu3 O7 − x

M. Tsai, H. Tuller, G. Choi, 1989 .

Effects of ZrO2 on the texturing and properties of melt‐processed Y1Ba2Cu3O7−δ

M. Tsai, M. Chu, J. Juang, 1994 .

The n-p Transition in YBa2Cu3O6–5+x

M. Tsai, H. Tuller, G. Choi, 1987 .

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Frederick T. Chen, S. Maikap, M. Kao, 2012, Nanoscale Research Letters.

Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

Ru Huang, Heng-Yuan Lee, Pang-Shiu Chen, 2011, 2011 International Reliability Physics Symposium.

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

S. W. Lee, M. Tsai, Cheewee Liu, 2005 .

Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

M. Tsai, T. Chin, D. Chao, 2012 .

Growth of strained Si on high-quality relaxed Si1−xGex with an intermediate Si1−yCy layer

M. Tsai, Chih-Wen Liu, L. Chou, 2005 .

Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers

C.W. Liu, J.-W. Shi, W.Y. Hsieh, 2004, IEEE Electron Device Letters.

Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

Frederick T. Chen, W. H. Liu, H. Y. Lee, 2010, 2010 International Electron Devices Meeting.

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, M. Tsai, H.Y. Lee, 2015, IEEE Electron Device Letters.

Improvements of Tc and phase purity of Tl-1223 superconductor and its application to tapes

M. Tsai, Y. T. Huang, Shih-kuo Wu, 1994 .

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Heng-Yuan Lee, Chin-May Wang, Kou-Chen Liu, 2007 .

DUV-assisted e-beam resist process

Wei-Su Chen, Ming-Jinn Tsai, Yen-Cheng Li, 2009, Advanced Lithography.

Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications

Meng-Fan Chang, Ming-Jinn Tsai, Che-Wei Wu, 2012, IEEE Journal of Solid-State Circuits.

Metal–Oxide RRAM

Shimeng Yu, H.-S. Philip Wong, Heng-Yuan Lee, 2012, Proceedings of the IEEE.

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

Heng-Yuan Lee, Pang-Shiu Chen, Frederick T. Chen, 2010, IEEE Electron Device Letters.

Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process

Meng-Fan Chang, Heng-Yuan Lee, Yu-Sheng Chen, 2010, 2010 International Electron Devices Meeting.

The CMP Process and Cleaning Solution for Planarization of Strain-Relaxed SiGe Virtual Substrates in MOSFET Applications

M. Tsai, T. Lei, Pang-Shiu Chen, 2006 .

MBE-grown high κ gate dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V semiconductors nano-electronics

Y. J. Lee, Y. D. Wu, S. Maikap, 2005 .

Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors

M. Tsai, T. Chao, Bae-horng Chen, 2006 .

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

M. Tsai, Cheewee Liu, Sheng-wei Lee, 2004 .

S-shaped negative differential resistance modeling in electro-thermal simulation of phase-change memory programming

M. Kao, M. Tsai, M. Chen, 2007, 2007 Non-Volatile Memory Technology Symposium.

Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Ming-Jinn Tsai, Tsung-Shune Chin, Ming-Jung Chen, 2009 .

The Transport Properties and Defect Chemistry of La 2-X Sr X CuO 4-δ

M. Tsai, H. Tuller, E. Opila, 1989 .

ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing

Meng-Fan Chang, Tien-Fu Chen, Frederick T. Chen, 2014, 2014 Symposium on VLSI Circuits Digest of Technical Papers.

Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure

Ming-Jinn Tsai, Simon M. Sze, Ann-Kuo Chu, 2013, IEEE Electron Device Letters.

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

Heng-Yuan Lee, Frederick T. Chen, Liann-Be Chang, 2012, Nanoscale Research Letters.

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Ming-Jinn Tsai, Ya-Chin King, Shyh-Shyuan Sheu, 2012, 2012 International Electron Devices Meeting.

Optimization and fabrication of planar edge termination techniques for a high breakdown voltage and low leakage current p-i-n diode

Bill Teng, M.-J. Tsai, Max Chen, 2004, Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04..

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

M. Tsai, S. Sze, A. Chu, 2013 .

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Zingway Pei, Wen-Hao Chang, M. Tsai, 2003 .

28-nm 2T High-$K$ Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Frederick T. Chen, Ming-Jinn Tsai, Yue-Der Chih, 2013, IEEE Electron Device Letters.

Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method

M. Tsai, B. Tsui, Jung-Chien Cheng, 2014 .

Reduction in critical current density for spin torque transfer switching with composite free layer

Ming-Jinn Tsai, Ming-Jer Kao, Kuei-Hung Shen, 2008 .

40-100nm contact-hole processes of ZEP520A e-beam resist on PCM prototyping applications

Wei-Su Chen, Ming-Jinn Tsai, Ming-Jer Kao, 2006, SPIE Advanced Lithography.

High Charge Storage Characteristics of CeO2 Nanocrystals for Novolatile Memory Applications

M. Tsai, T. Lei, C. Chien, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Device Size-Dependent Improved Resistive Switching Memory Performance

Frederick T. Chen, S. Maikap, M. Tsai, 2014, IEEE Transactions on Nanotechnology.

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

M. Tsai, S. Sze, Yu-Ting Chen, 2011 .

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng-Fan Chang, Heng-Yuan Lee, Yu-Sheng Chen, 2013, IEEE Journal of Solid-State Circuits.

Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

Frederick T. Chen, S. Maikap, M. Kao, 2012 .

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

M. Tsai, S. Sze, Hui-Chun Huang, 2011 .

Resistance switching for RRAM applications

Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, 2011, Science China Information Sciences.

Low current (5 pA) resistive switching memory using high-к Ta2O5 solid electrolyte

S. Z. Rahaman, S. Maikap, M. Kao, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Frederick T. Chen, M. Tsai, Yi-Hsuan Lee, 2012 .

Atomic-level quantized reaction of HfOx memristor

Ming-Jinn Tsai, Simon M. Sze, Kuan-Chang Chang, 2013 .

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

M. Tsai, S. Sze, Kuan‐Chang Chang, 2012, IEEE Electron Device Letters.

Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition

M. Tsai, Chih-Wen Liu, L. Chou, 2005 .

Memory access algorithm for low energy CPU/GPU heterogeneous systems with hybrid DRAM/NVM memory architecture

Ming-Jinn Tsai, Lih-Yih Chiou, Pei-Hua Wang, 2016, 2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS).

Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Heng-Yuan Lee, Ming-Jinn Tsai, Yu-Lun Chueh, 2015, IEEE Journal of the Electron Devices Society.

Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel

M. Tsai, Li-Jung Liu, K. Chang-Liao, 2013, IEEE Electron Device Letters.

Magnetic wireless interlayer transmission through perpendicular MTJ for 3D-IC applications

M. Tsai, Y. King, C. Lin, 2013, 2013 IEEE International Electron Devices Meeting.

Magnetic Wireless Interlayer Transmission Through Perpendicular MTJ for 3-D IC Applications

Ming-Jinn Tsai, Ya-Chin King, Chrong Jung Lin, 2014, IEEE Transactions on Electron Devices.

The resistive switching characteristics in TaON films for nonvolatile memory applications

M. Tsai, S. Sze, Kuan‐Chang Chang, 2013 .

Bipolar resistive switching of chromium oxide for resistive random access memory

M. Kao, M. Tsai, S. Sze, 2011 .

Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process

Heng-Yuan Lee, Ming-Jinn Tsai, Ya-Chin King, 2011, IEEE Transactions on Electron Devices.

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

Frederick T. Chen, Ming-Jinn Tsai, Wen-Yuan Chang, 2009 .

Influence of Crystalline Constituent on Resistive Switching Properties of TiO2 Memory Films

Frederick T. Chen, Ming-Jinn Tsai, Wen-Yuan Chang, 2009 .

Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

M. Kao, M. Tsai, Yung-Hung Wang, 2007 .

SAF exhibits better resistance to roughness edge than single-free layer

M. Kao, M. Tsai, J. Zhu, 2007 .

Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

M. Kao, M. Tsai, Wei Chen, 2007 .

The switching behaviors of submicron magnetic tunnel junctions with synthetic antiferromagnetic free layers

Lien-Chang Wang, M. Kao, M. Tsai, 2005 .

Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Ming-Jinn Tsai, Ming-Jer Kao, Rei-Fu Huang, 2006 .

Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications

M. Tsai, S. Sze, Kuan‐Chang Chang, 2011 .

Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

M. Tsai, S. Sze, A. Chu, 2012, IEEE Electron Device Letters.

A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

M. Tsai, Young-Shying Chen, C. Chuang, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A process for high yield and high performance carbon nanotube field effect transistors

Ming-Jinn Tsai, Bing-Yue Tsui, Pei-Jer Tzeng, 2010, Microelectron. Reliab..

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Heng-Yuan Lee, Pang-Shiu Chen, Ming-Jinn Tsai, 2007 .

Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

Heng-Yuan Lee, Pang-Shiu Chen, Frederick T. Chen, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Impact of incomplete set programing on the performance of phase change memory cell

Frederick T. Chen, Ming-Jinn Tsai, Chenhsin Lien, 2008 .

Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing

Frederick T. Chen, M. Tsai, Heng-Yuan Lee, 2010 .

Low power consumption resistance random access memory with Pt/InOx/TiN structure

M. Tsai, S. Sze, A. Chu, 2013 .

High-performance pMOSFETs with high-k gate dielectric and dislocation-free epitaxial Si/Ge super-lattice channel

M. Tsai, P. Gu, Li-Jung Liu, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure

Ming-Jinn Tsai, Chenhsin Lien, Ming-Jer Kao, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Effect of Oxygen Absorption on Contact Resistance between Metal and Carbon Nano Tubes (CNTs)

M. Tsai, B. Tsui, Jeng-Hua Wei, 2006, 2006 International Symposium on VLSI Technology, Systems, and Applications.

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

C. Lin, P. Tzeng, M. Tsai, 2008, IEEE Electron Device Letters.

Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

S. Maikap, C. Lin, P. Tzeng, 2007 .

Demonstration of Lateral IGBTs in 4H-SiC

M. Tsai, Young-Shying Chen, Chih-Fang Huang, 2013, IEEE Electron Device Letters.

Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

M. Tsai, Chih-Fang Huang, F. Zhao, 2012, IEEE Transactions on Electron Devices.

Thin relaxed SiGe layers for strained Si CMOS

M. Tsai, P. Chen, M. Lee, 2004, 2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846).

Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge

M. Tsai, Chih-Fang Huang, Li-heng Lee, 2015, IEEE Transactions on Electron Devices.

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Heng-Yuan Lee, Frederick T. Chen, Ming-Jinn Tsai, 2011, 2011 IEEE International Solid-State Circuits Conference.

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

M. Tsai, Young-Shying Chen, Ming Jinn Tsai, 2013 .

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

M. Tsai, D. Heh, P. Gu, 2011 .

Sub 10-nm contact holes with aspect ratio over sixty formed by e-beam resist shrinkage techniques

Wei-Su Chen, Ming-Jinn Tsai, Ming-Jer Kao, 2007, SPIE Advanced Lithography.

Performance enhancement of high-speed SiGe-based heterojunction phototransistor with substrate terminal

M. Tsai, Chih-Wen Liu, Z. Pei, 2004 .

Resistive switching characteristics of gallium oxide for nonvolatile memory application

M. Tsai, S. Sze, A. Chu, 2013 .

A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, 2009, 2009 Symposium on VLSI Circuits.

Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer

S. W. Lee, M. Tsai, Yan Peng, 2004 .

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Ming-Jinn Tsai, Sheng-Yao Huang, Simon M. Sze, 2010 .

A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor

C.W. Liu, C.S. Liang, M. Tsai, 2003, IEEE Electron Device Letters.

Ga19Sb81 film for multi-level phase-change memory

M. Tsai, T. Chin, P. Chang, 2013 .

Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

M. Tsai, S. Sze, T. Tsai, 2011 .

Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

P. Tzeng, M. Tsai, B. Tsui, 2006 .

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Frederick T. Chen, M. Tsai, Weisu Chen, 2011, Nanotechnology.

Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes

Wei-Su Chen, Ming-Jinn Tsai, M. Tsai, 2010, Advanced Lithography.

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

Ming-Jinn Tsai, Simon M. Sze, Ann-Kuo Chu, 2013 .

Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices

Frederick T. Chen, T. Wu, M. Tsai, 2013 .

Demonstration of a Novel Multilevel Storage Scheme for Phase Change Memory Using a Parameterized HSPICE Model

Ming-Jinn Tsai, Chenhsin Lien, Yi-Bo Liao, 2012 .