X. Guan

发表

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

Shimeng Yu, X. Guan, H. Wong, 2012, IEEE Transactions on Electron Devices.

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization

Shimeng Yu, X. Guan, H. Wong, 2011, 2011 International Electron Devices Meeting.

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

Shimeng Yu, X. Guan, H. Wong, 2012, IEEE Transactions on Electron Devices.

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

Shimeng Yu, X. Guan, H. Wong, 2012, IEEE Electron Device Letters.

Real- and mode-space simulation of electron transport in metallic carbon nanotubes using NEGF

X. Guan, Zhidong Chen, Ming Zhang, 2008, 2008 2nd IEEE International Nanoelectronics Conference.

Orientation-Dependent Energy Bandstructure Calculation for Silicon Nanowires Using Supercell Approach with the Tight-Binding Method

Zhiping Yu, Ximeng Guan, X. Guan, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Yan Wang, Zhiping Yu, Jinyu Zhang, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling of schottky and ohmic contacts between metal and graphene nanoribbons using extended hückel theory (EHT)-based NEGF method

Zhiping Yu, Ximeng Guan, X. Guan, 2008, 2008 IEEE International Electron Devices Meeting.

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\hbox{TiO}_{2}$-Based Unipolar Resistive Memory

X. Guan, Zhiping Yu, He Qian, 2011, IEEE Electron Device Letters.

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

Shimeng Yu, X. Guan, H. Wong, 2011 .

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

Shimeng Yu, X. Guan, H. Wong, 2012 .

Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation

X. Guan, Zhiping Yu, Liu Yang, 2008 .

Verilog-A compact model for oxide-based resistive random access memory (RRAM)

Shimeng Yu, X. Guan, H. Wong, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

D. A. Antoniadis, Ximeng Guan, Jieying Luo, 2013, IEEE Transactions on Electron Devices.

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

X. Guan, Zhiping Yu, Jiahao Kang, 2010 .

Nanoelectronic device simulation using extended Hückel theory (EHT) and NEGF

X. Guan, Zhiping Yu, Ming Zhang, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Surviving Process Variation: Investigation of CNR MOSFETs With Tapered Channels Using Fully Self-Consistent NEGF and Tight-Binding Methods

Ming Zhang, Zhiping Yu, Ximeng Guan, 2008, IEEE Electron Device Letters.

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Zhiping Yu, Ximeng Guan, X. Guan, 2007, 2007 IEEE International Electron Devices Meeting.

Resistive switching random access memory — Materials, device, interconnects, and scaling considerations

Shimeng Yu, Ximeng Guan, Jiale Liang, 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

Yan Wang, Zhiping Yu, Jinyu Zhang, 2010, IEEE Transactions on Electron Devices.

Analytical approximation of complex band structures for band-to-band tunneling models

K. Saraswat, X. Guan, H. Wong, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Complex Band Structures: From Parabolic to Elliptic Approximation

K. Saraswat, X. Guan, H. Wong, 2011, IEEE Electron Device Letters.

On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

Shimeng Yu, H.-S. Philip Wong, Ximeng Guan, 2012 .

P‐142: On the Equivalent Circuit Models of Flexible AMOLED On‐Cell Touch Panels

X. Guan, Jiahao Kang, E. Yu, 2019, SID Symposium Digest of Technical Papers.

Compact models of emerging devices

H-S Philip Wong, Lan Wei, Ximeng Guan, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

First-principles investigation on bonding formation and electronic structure of metal-graphene contacts

X. Guan, Zhiping Yu, Qiushi Ran, 2009 .

Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

Shimeng Yu, Ximeng Guan, Shimeng Yu, 2012, 2012 International Electron Devices Meeting.

Recent progress of resistive switching random access memory (RRAM)

Shimeng Yu, Ximeng Guan, H. P. Wong, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Computation of Si Nanowire Bandstructures on Parallel Machines Through Domain Decomposition

X. Guan, Zhiping Yu, Wei Xue, 2006, International Conference on Computational Science.