D. Seong

发表

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

C. Chung, I. Baek, Seong-Geon Park, 2012, 2012 International Electron Devices Meeting.

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

H. Ahn, S. Choi, H. K. Kang, 2011, 2011 International Electron Devices Meeting.

Resistance switching of copper doped MoOx films for nonvolatile memory applications

H. Hwang, D. Seong, Dongsoo Lee, 2007 .

An electrically modifiable synapse array of resistive switching memory

H. Hwang, D. Seong, Hyejung Choi, 2009, Nanotechnology.

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

H. Hwang, M. Jo, D. Seong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

H. Hwang, D. Seong, R. Dong, 2007 .

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

H. Hwang, D. Seong, Seungjae Jung, 2009, IEEE Electron Device Letters.

HPHA effect on reversible resistive switching of Pt/Nb-doped SrTiO3 Schottky junction for nonvolatile memory application

H. Hwang, M. Jo, D. Seong, 2007 .

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

H. Hwang, D. Seong, R. Dong, 2008 .

Materials and process aspect of cross-point RRAM (invited)

Hyunsang Hwang, Joonmyoung Lee, Minseok Jo, 2011 .

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET

H. Hwang, M. Jo, D. Seong, 2009, IEEE Electron Device Letters.

Improvement of Characteristics of Ga-Doped ZnO Grown by Pulsed Laser Deposition Using Plasma-Enhanced Oxygen Radicals

H. Hwang, D. Seong, D. Hwang, 2008 .

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

H. Hwang, D. Seong, Seungjae Jung, 2009 .

Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy

H. Hwang, D. Seong, Seungjae Jung, 2010 .

Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing

H. Hwang, M. Jo, D. Seong, 2007 .

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

H. Hwang, D. Seong, Seungjae Jung, 2008 .

Investigation of State Stability of Low-Resistance State in Resistive Memory

Hyunsang Hwang, Jaesik Yoon, Jubong Park, 2010, IEEE Electron Device Letters.

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

H. Hwang, M. Jo, D. Seong, 2008 .

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

Hyunsang Hwang, Jaesik Yoon, Wootae Lee, 2009, IEEE Electron Device Letters.

Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate

H. Hwang, D. Seong, R. Dong, 2008 .

Structural and Electrical Properties of Epitaxial Nb-Doped SrTiO3 Film Deposited on Si ( 100 ) Substrate

H. Hwang, D. Seong, Dongsoo Lee, 2007 .

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

H. Hwang, D. Seong, Hyejung Choi, 2009 .

Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements

H. Hwang, D. Seong, Dongsoo Lee, 2008 .

Low power operating bipolar TMO ReRAM for sub 10 nm era

S. J. Kim, J. H. Kim, R. Jammy, 2010, 2010 International Electron Devices Meeting.

Novel cross-point resistive switching memory with self-formed schottky barrier

Hyunsang Hwang, Seungjae Jung, Wootae Lee, 2010, 2010 Symposium on VLSI Technology.