Z. Wei

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Z. Wei, T. Takagi, Y. Kanzawa, 2011, 2011 International Electron Devices Meeting.

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Z. Wei, T. Takagi, Y. Kanzawa, 2008, 2008 IEEE International Electron Devices Meeting.

Retention Model for High-Density ReRAM

Z. Wei, T. Takagi, Y. Kanzawa, 2012, 2012 4th IEEE International Memory Workshop.

Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation

Z. Wei, T. Takagi, Takeki Ninomiya, 2012, 2012 Symposium on VLSI Technology (VLSIT).