C. Lin

发表

Ultra high density 3D via RRAM in pure 28nm CMOS process

M. Tsai, M. Hsieh, Yu-Cheng Liao, 2013, 2013 IEEE International Electron Devices Meeting.

High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

C. Lin, Y. Tseng, Chia-En Huang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors

Meng-Fan Chang, Qi Wei, Huazhong Yang, 2017, IEEE Journal of Solid-State Circuits.

Dummy Read Scheme for Lifetime Improvement of MLC NAND Flash Memories

Ya-Chin King, Chrong-Jung Lin, Dai Yan Wu, 2016, IEEE Transactions on Device and Materials Reliability.

Embedded 2Mb ReRAM macro with 2.6ns read access time using dynamic-trip-point-mismatch sampling current-mode sense amplifier for IoE applications

Meng-Fan Chang, Yu-Der Chih, Ya-Chin King, 2017, 2017 Symposium on VLSI Circuits.

Self-Matching SRAM With Embedded OTP Cells in Nanoscale Logic CMOS Technologies

Po-Yen Lin, Hung-Yu Chen, Ya-Chin King, 2014, IEEE Transactions on Electron Devices.

Novel Self-Aligned Nitride One Time Programming with 2-bit/Cell Based on Pure 90-nm Complementary Metal?Oxide?Semiconductor Logic Technology

Y. King, C. Lin, Chia-En Huang, 2008 .

32nm strained nitride MTP cell by fully CMOS logic compatible process

Y. King, C. Lin, Chia-En Huang, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology

Y. King, C. Lin, Chia-En Huang, 2008, IEEE Electron Device Letters.

4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic

Yu Wang, Meng-Fan Chang, Qi Wei, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

1Kbit FinFET Dielectric (FIND) RRAM in pure 16nm FinFET CMOS logic process

Y. Chih, Y. King, C. Lin, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Differential multiple-time-programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

Y. Chih, Y. King, C. Lin, 2017 .

28nm high-k metal gate RRAM with fully compatible CMOS logic processes

Y. King, C. Lin, Y. Chih, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

Tzong-Sheng Chang, Y. King, C. Lin, 2015, IEEE Electron Device Letters.

A high density Twin-Gate OTP cell in pure 28nm CMOS process

Tzong-Sheng Chang, Y. Chih, Y. King, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process

Ya-Chin King, Chrong Jung Lin, Min-Che Hsieh, 2014, 2014 IEEE International Electron Devices Meeting.

A CMOS Active Pixel Sensor With Light Intensity Filtering Characteristics for Image Thresholding Application

Chrong Jung Lin, C. Lin, C. Huang, 2012, IEEE Sensors Journal.

Current-mode ambient light sensor for ultralow-power applications

Y. King, C. Lin, T. Tsai, 2014 .

A low-temperature polycrystalline-silicon thin-film transistor micro-manipulation array with indium tin oxide micro-coils and real-time detection

Y. King, C. Lin, C. Chen, 2009 .

Temperature dependent characteristics of the random telegraph noise on contact resistive random access memory

Y. King, C. Lin, Liang-Shun Chang, 2014 .

Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

Y. King, C. Lin, Y. Kao, 2020, IEEE Journal of the Electron Devices Society.

Integrated Ambient Light Sensor With Nanocrystalline Silicon on a Low-Temperature Polysilicon Display Panel

Y. King, C. Lin, A. Cho, 2009 .

Via Diode in Cu Backend Process for 3D Cross-Point RRAM Arrays

M. Tsai, M. Hsieh, Yu-Cheng Liao, 2014, IEEE Journal of the Electron Devices Society.

High Sensitivity of Dielectric films Structure for Advanced CMOS Image Sensor Technology

Dun-Nian Yaung, Chung S. Wang, Chrong Jung Lin, 2007 .

Process optimization for preventing boron-penetration using P or As co-implant in P-poly gate of P-MOSFETs

C. Lin, T. Chao, Che-Hua Hsu, 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.

Embedded Near-Infrared Sensor With Tunable Sensitivity for Nanoscale CMOS Technologies

Y. Chih, Y. King, C. Lin, 2019, IEEE Sensors Journal.

Twin-bit via resistive random access memory in 16 nm FinFET logic technologies

Y. King, C. Lin, Y. Shih, 2018 .

Gate contact resistive random access memory in nano scaled FinFET logic technologies

Y. Chih, Y. King, C. Lin, 2017 .

Wafer-Level Mapping of Plasma-Induced Charging Effect by On-Chip In Situ Recorders in FinFET Technologies

Y. King, C. Lin, Yi-Pei Tsai, 2016, IEEE Transactions on Electron Devices.

On-Chip Recovery Operation for Self-Aligned Nitride Logic Non-Volatile Memory Cells in High-K Metal Gate CMOS Technology

Tzong-Sheng Chang, Y. King, C. Lin, 2015, IEEE Journal of the Electron Devices Society.

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

Y. Chih, Y. King, C. Lin, 2021, Advanced Functional Materials.

Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

Y. Chih, Y. King, C. Lin, 2022, Nanoscale Research Letters.

Plasma Charging Effect on the Reliability of Copper BEOL Structures in Advanced FinFET Technologies

Y. King, C. Lin, Yi-Pei Tsai, 2018, IEEE Journal of the Electron Devices Society.

Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes

Y. King, C. Lin, Yi-Pei Tsai, 2017, Nanoscale Research Letters.

Silicon‐nanocrystal‐based photosensor integrated on low‐temperature polysilicon panels

Y. King, C. Lin, C. Chao, 2008 .

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

Y. King, C. Lin, P. Lin, 2016 .

Silicon nanocrystal-based photosensor on low-temperature polycrystalline-silicon panels

Y. King, C. Lin, C. Chen, 2007 .

P‐199L: Late‐News Poster: Silicon Nanocrystals Photo Sensor Integrated on Low‐Temperature Polycrystalline‐Silicon Panels

Y. King, C. Lin, C. Chen, 2007 .

Integration of Microcoil Magnetic Manipulation with High-Sensitivity Complementary Metal–Oxide–Semiconductor Photosensor Detection in Bio-Analyses

Y. King, C. Lin, C. Chen, 2010 .

Self-Clamping Programming in Narrow-Bridge Floating Gate Cells for Multi-Level Logic Non-Volatile Memory Applications

Y. King, C. Lin, Wei-Cheng Zhuang, 2020, IEEE Journal of the Electron Devices Society.

Current-mode ambient light sensor for ultralow-power applications

Y. King, C. Lin, T. Tsai, 2013 .

Promising Engineering Approaches for Improving the Reliability of HfZrOx 2-D and 3-D Ferroelectric Random Access Memories

P. Tzeng, Y. King, C. Lin, 2020, IEEE Transactions on Electron Devices.

Retention Model of TaO/HfOx and TaO/AlOx RRAM with Self-Rectifying Switch Characteristics

S. Z. Rahaman, Y. King, C. Lin, 2017, Nanoscale Research Letters.

Ultra fast write speed, long refresh time, low power F-N operated volatile memory cell with stacked nanocrystalline Si film

C. Lin, C. Hsu, Shih-Jye Shen, 1996 .

Stress-induced width-dependent degradation of low-temperature polycrystalline silicon thin-film transistor

Y. King, C. Lin, Hung‐Tse Chen, 2007 .

Leakage Suppression of Low Voltage Transient Voltage Suppressor

Y. King, C. Lin, Sheng-Huei Dai, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

A New Sensing Scheme for Sensitivity Enhancement of Low-Temperature Polycrystalline Silicon Photodetecors

Y. King, C. Lin, C. Chen, 2011, IEEE Sensors Journal.

Quantum size effects on photoluminescence from Si nanocrystals in PECVD silicon-rich-oxide

C. Lin, S. Horng, C. Hsu, 1997 .

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Y. King, C. Lin, C. Chen, 2019, Nanoscale Research Letters.

A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving $> 4\times $ Faster Clock Frequency and $> 6\times $ Higher Restore Speed

Kang L. Wang, Y. King, C. Lin, 2017, IEEE Journal of Solid-State Circuits.

Lateral Back-to-Back Diode for Low-Capacitance Transient Voltage Suppressor

Y. King, C. Lin, Chia-Cheng Chen, 2009 .

Improvement of Bottom Oxide Thickness Scaling of Inter-Poly Dielectric by Floating Gate Top Plasma Nitridation

C. Lin, H. Arakawa, Wei-Shiang Huang, 2014, IEEE Electron Device Letters.

Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET Process

Y. King, C. Lin, Fu-Cheng Chang, 2019, IEEE Transactions on Electron Devices.

1-kb FinFET Dielectric Resistive Random Access Memory Array in $1\times $ nm CMOS Logic Technology for Embedded Nonvolatile Memory Applications

Y. Chih, Y. King, C. Lin, 2016, IEEE Transactions on Electron Devices.

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

Ya-Chin King, Wen Chao Shen, Chrong-Jung Lin, 2012, IEEE Electron Device Letters.

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise.

Chrong Jung Lin, Yuan Heng Tseng, Wen Chao Shen, 2012, Journal of applied physics.

Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Chia-En Huang, Ya-Chin King, Chrong Jung Lin, 2010, 2010 International Electron Devices Meeting.

Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology.

Y. Chih, Y. King, C. Lin, 2021, Small.

A New Differential Logic-Compatible Multiple-Time Programmable Memory Cell

Y. King, C. Lin, Y. Tsai, 2009 .

Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process

Meng-Fan Chang, Heng-Yuan Lee, Yu-Sheng Chen, 2010, 2010 International Electron Devices Meeting.

7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell

Meng-Fan Chang, Tien-Fu Chen, Ya-Chin King, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Ming-Jinn Tsai, Ya-Chin King, Shyh-Shyuan Sheu, 2012, 2012 International Electron Devices Meeting.

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology

Y. Chih, Y. King, C. Lin, 2021, Nanoscale Research Letters.

28-nm 2T High-$K$ Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Frederick T. Chen, Ming-Jinn Tsai, Yue-Der Chih, 2013, IEEE Electron Device Letters.

Integrated ambient light sensor in LTPS LCD panel with silicon nanocrystals photosensor

Ya-Chin King, Chrong Jung Lin, Wen-Jen Chiang, 2007 .

Polarity and Patterning Effect on Plasma Charging Levels by Metal-Gate Coupled Recorder Arrays

Y. King, C. Lin, J. Shih, 2022, IEEE Transactions on Electron Devices.

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Y. King, C. Lin, K. Yang, 2020, Nanoscale Research Letters.

Plasma Charge Accumulative Model in Quantitative FinFET Plasma Damage

Y. King, C. Lin, J. Shih, 2019, IEEE Transactions on Electron Devices.

An Investigation of Plasma Charging Effect on FinFET Front-End-of-Line Processes

Y. King, C. Lin, J. Shih, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

7nm FinFET Plasma Charge Recording Device

Y. King, C. Lin, J. Shih, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Mapping of wafer-level plasma induced charge contour by novel on-chip in-situ recorders in advance FinFET technologies

Ya-Chin King, Chrong Jung Lin, Chun-Hsiung Wu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

High‐uniformity 2T1C AMOLED panels by a built‐in trimming method

Chrong Jung Lin, Ya-Chin King, Te-Yu Lee, 2010 .

Leakage Suppression of Low-Voltage Transient Voltage Suppressor

Y. King, C. Lin, Sheng-Huei Dai, 2008, IEEE Transactions on Electron Devices.

Leakage Suppression of Low-Voltage

Ya-Chin King, Chrong Jung Lin, Sheng-Huei Dai, 2008 .

Magnetic wireless interlayer transmission through perpendicular MTJ for 3D-IC applications

M. Tsai, Y. King, C. Lin, 2013, 2013 IEEE International Electron Devices Meeting.

Low voltage Transient Voltage Suppressor with v-groove structure

Y. King, C. Lin, Sheng-Huei Dai, 2008, 2008 IEEE International Reliability Physics Symposium.

Magnetic Wireless Interlayer Transmission Through Perpendicular MTJ for 3-D IC Applications

Ming-Jinn Tsai, Ya-Chin King, Chrong Jung Lin, 2014, IEEE Transactions on Electron Devices.

Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process

Heng-Yuan Lee, Ming-Jinn Tsai, Ya-Chin King, 2011, IEEE Transactions on Electron Devices.

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

Chia-En Huang, Ya-Chin King, Chrong Jung Lin, 2011, IEEE Transactions on Electron Devices.

Titanium-Oxide-Based Slot Contact RRAM in Nanoscaled FinFET Logic Technologies

Y. King, C. Lin, C. Liao, 2016, IEEE Electron Device Letters.

Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

Yung-Hui Yeh, Ya-Chin King, Chun-Cheng Cheng, 2011, IEEE Electron Device Letters.

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Ya-Chin King, Chrong-Jung Lin, Y. King, 2018, Nanoscale Research Letters.

Impact of Moisture From Passivation on Endurance and Retention of NAND Flash Memory

C. Lin, H. Arakawa, Ya-Jui Lee, 2013, IEEE Transactions on Electron Devices.

A ReRAM-based single-NVM nonvolatile flip-flop with reduced stress-time and write-power against wide distribution in write-time by using self-write-termination scheme for nonvolatile processors in IoT era

Meng-Fan Chang, Huazhong Yang, Yongpan Liu, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Low ${\rm VDDmin}$ Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations

Meng-Fan Chang, Yen-Chen Liu, Yu-Der Chih, 2015, IEEE Journal of Solid-State Circuits.

Statistical analysis of the correlations between cell performance and its initial states in contact resistive random access memory cells

Ya-Chin King, Chrong Jung Lin, Yun Feng Kao, 2017 .

Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology

Chien-Ping Wang, Ying-Chun Shen, Peng-Chun Liou, 2019, Sensors.

Investigation of Set/Reset Operations in CMOS-Logic-Compatible Contact Backfilled RRAMs

Hung-Yu Chen, Ya-Chin King, Chrong Jung Lin, 2016, IEEE Transactions on Device and Materials Reliability.

High Resolution Ion Detector (HRID) by 16nm FinFET CMOS Technology

Peng-Chun Liou, Yu-Lun Chueh, Jonathan Chang, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

A study of gateless OTP cell using a 45 nm CMOS compatible process

Ya-Chin King, Yi-Hung Tsai, Chrong Jung Lin, 2009 .

A Nitride-Based P-Channel Logic-Compatible One-Time-Programmable Cell With a New Contact Select Gate

Yue-Der Chih, Ya-Chin King, Kai-Chun Lin, 2009, IEEE Electron Device Letters.

Multilevel Fully Logic-Compatible Latch Array for Computing-in-Memory

Y. Chih, Y. King, C. Lin, 2023, IEEE Transactions on Electron Devices.

Twin-Bit Resistive Random Access Memory in FinFET CMOS Logic Technologies

Ya-Chin King, Chrong Jung Lin, Chieh Lee, 2019, 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

Meng-Fan Chang, Wei-Hao Chen, Yen-Cheng Chiu, 2020, IEEE Journal of Solid-State Circuits.

Investigation of parasitic resistance and capacitance effects in nanoscaled FinFETs and their impact on static random-access memory cells

Y. King, C. Lin, F. Meng, 2017 .

CMOS-Compatible Embedded Artificial Synaptic Device (eASD) for Neuromorphic Computing and AI Applications

Y. King, C. Lin, Yao-Hung Huang, 2024, IEEE Transactions on Electron Devices.

On-Wafer FinFET-Based EUV/eBeam Detector Arrays for Advanced Lithography Processes

Y. King, C. Lin, J. Shih, 2020, IEEE Transactions on Electron Devices.

A New Antifuse Cell With Programmable Contact for Advance CMOS Logic Circuits

Chia-En Huang, Ya-Chin King, Chrong-Jung Lin, 2008, IEEE Electron Device Letters.

Self-Convergent Trimming SRAM True Random Number Generation With In-Cell Storage

Yue-Der Chih, Ya-Chin King, Yi-Hong Chang, 2019, IEEE Journal of Solid-State Circuits.