Young-Bae Kim

发表

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Kinam Kim, S. Seo, D. Seo, 2011, Nature materials.

Bi-layered RRAM with unlimited endurance and extremely uniform switching

Kinam Kim, I. Yoo, U. Chung, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Modeling for bipolar resistive memory switching in transition-metal oxides

Myoung-Jae Lee, Chang Bum Lee, J. Hur, 2010 .

Bi‐Layered Reram: Multi‐Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

U-In Chung, Young-Bae Kim, Kyung Min Kim, 2013 .

Modeling for multilevel switching in oxide-based bipolar resistive memory

U. Chung, Myoung-Jae Lee, Chang Bum Lee, 2012, Nanotechnology.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

Byoung Hun Lee, Hyunsang Hwang, Moongu Jeon, 2013, Nanotechnology.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Chang Jung Kim, Sungho Kim, In-Kyeong Yoo, 2013, Scientific Reports.

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

U. Chung, Myoung-Jae Lee, Chang Bum Lee, 2010, IEEE Electron Device Letters.

Effect of clay on the surface morphology and field emission properties of screen-printed activated carbon

J. M. Kim, Young-Bae Kim, D. Zang, 2008 .

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

U-In Chung, Young-Bae Kim, Dongsoo Lee, 2012, 2012 Symposium on VLSI Technology (VLSIT).