K. Matthews

发表

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

D. Gilmer, G. Bersuker, D. Veksler, 2012, 2012 International Electron Devices Meeting.

Comparison of Plasma-Induced Damage in SIO2/TIN and HFO2/TIN Gate Stacks

J.C. Lee, G. Bersuker, B.H. Lee, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices

George A. Brown, G. Bersuker, K. Matthews, 2005 .

Body effect in tri- and pi-gate SOI MOSFETs

C.R. Cleavelin, T. Schulz, K. Matthews, 2004, IEEE Electron Device Letters.

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

G. Bersuker, P. D. Kirsch, K. Matthews, 2013, IEEE Transactions on Device and Materials Reliability.

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates

K. Matthews, A. Lochtefeld, M. Rodder, 2006 .

Dominant SILC mechanisms in HfO/sub 2//TiN gate nMOS and pMOS transistors

G. Bersuker, K. Matthews, P. Kirsch, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs)

C.R. Cleavelin, P. Patruno, T. Schulz, 2005, 2005 IEEE International SOI Conference Proceedings.

Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer

G. Bersuker, K. Matthews, Y. Kim, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

S. Deora, K. Matthews, P. Kirsch, 2013, 2013 IEEE International Electron Devices Meeting.

Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods

L. Larcher, A. Padovani, G. Bersuker, 2014, 2014 IEEE International Reliability Physics Symposium.

Comparison of effective work function extraction methods using capacitance and current measurement techniques

G. Bersuker, K. Matthews, P. Majhi, 2006, IEEE Electron Device Letters.

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- $\kappa $ Gate-Stacks

Gennadi Bersuker, Kenneth Matthews, Andrea Padovani, 2014, IEEE Transactions on Electron Devices.

New insights into SILC-based life time extraction

L. Larcher, T. Ngai, G. Bersuker, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure

J. Woicik, K. Matthews, P. Kirsch, 2014, Symposium on VLSI Technology.

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

R. Jammy, P. D. Kirsch, K. Matthews, 2012, 2012 International Electron Devices Meeting.

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Chang Yong Kang, Martin Rodgers, Chris Hobbs, 2013, IEEE Electron Device Letters.

FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface

K. Matthews, S. Gausepohl, P. Kirsch, 2012, 2012 Symposium on VLSI Technology (VLSIT).

(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

K. Matthews, K. Akarvardar, P. Majhi, 2012 .

Full/partial depletion effects in FinFETs

Tsu-Jae King, C.R. Cleavelin, P. Patruno, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

S. Koveshnikov, R. Jammy, P. D. Kirsch, 2012, 2012 International Electron Devices Meeting.

Mapping Defect Density in MBE Grown ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Matthew J. Filmer, K. Matthews, P. Kirsch, 2014, IEEE Transactions on Electron Devices.

Silicon Superlattice on SOI for High Mobility and Reduced Leakage

K. Matthews, H. Takeuchi, G. Gebara, 2007, 2007 IEEE International SOI Conference.

Growth mechanism of TiN film on dielectric films and the effects on the work function

Husam N. Alshareef, Hongfa Luan, Kisik Choi, 2005 .

Gated Diode Investigation of Bias Temperature Instability in High- $\kappa$ FinFETs

M. Hussein, G. Bersuker, K. Matthews, 2010, IEEE Electron Device Letters.

Systematic Study of Thick Strained Silicon NMOSFETs for Digital Applications

K. Matthews, R. Wise, M. Curtin, 2006 .

Multi-technique study of defect generation in high-k gate stacks

G. Bersuker, D. Veksler, K. Matthews, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

P. D. Kirsch, K. Matthews, D.-H Kim, 2013, 2013 IEEE International Electron Devices Meeting.