J. Tihanyi

DIMOS - A novel IC technology with submicron effective channel MOSFETs

J. Tihanyi, D. Widmann, 1977, 1977 International Electron Devices Meeting.

Influence of the floating substrate potential on the characteristics of ESFI MOS transistors

J. Tihanyi, H. Schlötterer, Jenö Dr. Tihanyi, 1975 .

Functional integration of power MOS and bipolar devices

J. Tihanyi, J. Tihanyi, 1980, 1980 International Electron Devices Meeting.

Observation of surface phenomena on semiconductor devices by a light spot scanning method

J. Tihanyi, G. Pásztor, 1967 .

Doping profile measurements on silicon epitaxial layers with field controlled planar diodes

J. Tihanyi, 1970 .

Properties of ESFI MOS transistors due to the floating substrate and the finite volume

J. Tihanyi, J. Tihanyi, H. Schlotterer, 1974, IEEE Transactions on Electron Devices.

A new generation of high voltage MOSFETs breaks the limit line of silicon

J. Tihanyi, G. Deboy, N. Marz, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).