G. Dorda

发表

Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique

D. Schmitt, G. Dorda, 1981 .

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

G. Dorda, K. Klitzing, M. Pepper, 1980 .

Electrical conductivity of silicon oxide

G. Dorda, J. Vrba, 1967 .

Hot-electron and hole-emission effects in short n-channel MOSFET's

C. Werner, W. Weber, G. Dorda, 1985, IEEE Transactions on Electron Devices.

Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect

B. Borchert, G. Dorda, B. Borchert, 1988 .

Hot carrier degradation mechanism in n-MOSFETS

G. Dorda, W. Weber, K. Hofmann, 1984, 1984 International Electron Devices Meeting.

The Quasi-2-Dimensional System in MOS-Structures

G. Dorda, 1978 .

Optically induced charge storage in ion implanted SiO2

G. Dorda, E. Jacobs, 1977 .

Charge storage by irradiation with UV light in non-biased MNOS structures

G. Dorda, E. Jacobs, 1977 .

Generation of Interface States and Charge Trapping in MOSFETs

G. Dorda, K. Hofmann, 1984 .

Cyclotron resonance of electrons in surface space-charge layers on silicon

G. Dorda, G. Abstreiter, J. Kotthaus, 1976 .

Many-valley interactions in n-type silicon inversion layers

G. Dorda, I. Eisele, H. Gesch, 1978 .

A proposal to explain how the circatidal rhythm of the Arabidopsis thaliana root elongation rate could be mediated by the lunisolar gravitational force: a quantum physical approach

G. Dorda, J. Fisahn, P. Barlow, 2017, Annals of botany.

The current-voltage characteristics of field-effect transistors with short channels

G. Dorda, K. Hess, C. Sah, 1976 .

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

G. Dorda, K. Klitzing, T. Neugebauer, 1975 .

Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors

G. Dorda, K. Klitzing, G. Landwehr, 1974 .

Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer

P. Kneschaurek, Avid Kamgar, G. Dorda, 1974 .

Surface states in the conduction band region of Si

G. Dorda, I. Eisele, 1974 .

Comments on the hole mass in silicon inversion layers

G. Dorda, K. Klitzing, G. Landwehr, 1976 .

Evidence for mobility domains in (100) silicon inversion layers

G. Dorda, I. Eisele, H. Gesch, 1976 .

Mechanical stress influence on effective masses in Si inversion layers

G. Dorda, I. Eisele, H. Gesch, 1976 .

Surface quantum oscillations in (100) inversion layers under uniaxial stress

G. Dorda, I. Eisele, H. Gesch, 1976 .

Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon

G. Dorda, K. Klitzing, G. Landwehr, 1974 .

Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures:pchannel

G. Dorda, K. Hess, T. Neugebauer, 1977 .

On the Electronicg-Faetor in n-Type Silicon Inversion Layers

G. Dorda, K. Klitzing, M. Pepper, 1980 .

Charge exchange mechanism between germanium and surface oxide

G. Dorda, 1965 .

Internal Field Emission on Germanium Surface at a. c. Field Effect

G. Dorda, 1963 .

The Interpretation of the Hubble-Effect and of Human Vision Based on the Differentiated Structure of Space

G. Dorda, 2019 .

A new general quantum transport model

G. Dorda, 1990 .

Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at High Magnetic Fields

G. Dorda, K. Klitzing, S. Koch, 1992 .

Quantum effects in semiconductor components

G. Dorda, 1988 .

Positive and negative charge generation by hot carriers in n-MOSFETs

G. Dorda, B. Borchert, K. Hofmann, 1983 .

Influence of relative humidity on surface conductivity of germanium

G. Dorda, 1960 .

Observation of Slow States on Germanium Surface by Tunneling at d-c Field Effect

G. Dorda, 1964, 1964.

Internal field emission from oxide states into germanium

G. Dorda, S. Koc, 1964 .

The influence of different forms of surface oxide on the fast states of germanium

G. Dorda, 1963 .

Changes in surface recombination caused by sorption of water molecules

G. Dorda, 1961 .

High Precision Measurements of the Quantized Hall Resistance at the PTB

Peter Warnecke, W. Schlapp, Klaus Ploog, 1985, IEEE Transactions on Instrumentation and Measurement.

Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers

G. Dorda, G. Dorda, 1971 .

Flat-band voltage hysteresis of MNOS structures

G. Dorda, M. Pulver, 1970 .

Negative Magnetoresistance in n-Channel (100) Silicon Inversion Layers

G. Dorda, I. Eisele, 1974 .

The Interpretation of Sound on the Basis of the Differentiated Structure of Three-Dimensional Space

G. Dorda, 2020 .

1D analytical treatment of hot-electron effects in short-channel MOSFET's

Mitiko Miura-Mattausch, G. Dorda, M. Miura-Mattausch, 1985 .

Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurements

D. Schmitt-Landsiedel, G. Dorda, D. Schmitt-Landsiedel, 1985, IEEE Transactions on Electron Devices.

Effect of the electron temperature on the gate-induced charge in small size mos transistors

Jean-Pierre Leburton, Gerhard Dorda, G. Dorda, 1983 .

Generation of interface states by hot hole injection in MOSFET's

G. Dorda, J. Leburton, H. Gesch, 1982, IEEE Transactions on Electron Devices.

Analytical approach of hot electron transport in small size MOSFET's

G. Dorda, J. Leburton, H. Gesch, 1981 .

v-E dependence in small-sized MOS transistors

G. Dorda, J. Leburton, J.-P. Leburton, 1982, IEEE Transactions on Electron Devices.

EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE

G. Dorda, 1970 .

Degradation of n-MOS-Transistors after pulsed stress

C. Werner, W. Weber, G. Dorda, 1984, IEEE Electron Device Letters.

Valley degeneracy and mobility anisotropy under mechanical stress on (111) silicon inversion layers

G. Dorda, I. Eisele, H. Gesch, 1976 .

Electron mobility in Si-MOSFETs with an additional implanted channel

G. Dorda, I. Eisele, E. Jacobs, 1979 .

Pressure dependence of structure in the mobility of (100) silicon inversion layers

G. Dorda, I. Eisele, H. Gesch, 1978 .

Effective masses in (100) silicon inversion layers

G. Dorda, I. Eisele, H. Gesch, 1977 .

Quantum oscillations in (110) and (111)n-channel MOSFET's

G. Dorda, K. Klitzing, T. Neugebauer, 1976 .

Inversion layers in silicon on insulating substrates

G. Dorda, J. Pontcharra, G. Landwehr, 1980 .

Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stress

G. Dorda, J. Kotthaus, P. Stallhofer, 1979 .

Piezoresistance in n‐type silicon inversion layers at low temperatures

G. Dorda, I. Eisele, 1973 .

Mechanical stress at the (111) Si surface covered by SiO2 and AlSiO2 layers

G. Dorda, E. Jacobs, 1978 .