K. Bolan

Mechanism of single-layer 193-nm dissolution inhibition resist

Elsa Reichmanis, Omkaram Nalamasu, Francis M. Houlihan, 2000, Advanced Lithography.

High-density lithography using attenuated phase-shift mask and negative resist

Raymond A. Cirelli, Pat G. Watson, Omkaram Nalamasu, 2000, Advanced Lithography.

Lithographic behavior of carboxylate-based dissolution inhibitors and the effect of blending

Elsa Reichmanis, Omkaram Nalamasu, Francis M. Houlihan, 2001, SPIE Advanced Lithography.

RESIST DESIGN CONSIDERATIONS FOR DIRECT WRITE AND PROJECTION ELECTRON-BEAM LITHOGRAPHY TECHNOLOGIES

Myrtle I. Blakey, Lloyd R. Harriott, R. G. Tarascon, 1996 .

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

T. Nigam, James D. Plummer, J. F. Miner, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Fundamental Studies of Molecular Interactions and Dissolution Inhibition in Poly(norbornene-alt-maleic anhydride)-Based Resins

Elsa Reichmanis, Omkaram Nalamasu, Zhenglin Yan, 2000 .