G. Borel

DMILL (Durci Mixte sur Isolant Logico-Linéaire) A mixed analog-digital radiation hard technology for high energy physics electronics

M. Dentan, P. Borgeaud, M. Rouger, 1993 .

Full analysis of alternating injection in SOI transistors: comparison to bulk transistors

G. Borel, S. Cristoloveanu, E. Guichard, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI

G. Borel, D. Céli, D. Thomas, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

A fast, low power CMOS amplifier on SOI for sensor applications in a radiation environment of up to 20 Mrad(Si)

P. Jarron, G. Borel, P. Aspell, 1995 .

Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Sorin Cristoloveanu, Jean Brini, Gerard Ghibaudo, 1991 .

Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs

Sorin Cristoloveanu, Thierry Ouisse, G. Borel, 1992 .

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Federico Faccio, Pierre Jarron, Erik H. M. Heijne, 1994 .

Study of device parameters for analog IC design in a 1.2 mu m CMOS-SOI technology after 10 Mrad (for hadron colliders)

Federico Faccio, Pierre Jarron, Erik H. M. Heijne, 1992 .

Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

Sorin Cristoloveanu, Dimitris E. Ioannou, T. Ouisse, 1991 .