H. Morkoç

H. Morkoç, L. Eastman, W. Schaff, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

H. Morkoç, B. Sverdlov, G. Gao, 1993, Proc. IEEE.

A pnp AlGaAs/GaAs heterojunction bipolar transistor

W. Kopp, R. Fischer, H. Morkoç, 1985 .

H. Morkoç, S. Novak, V. Avrutin, 2009 .

Visible Luminescence Related to Defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Review—Electrochemical Biosensors Based on ZnO Nanostructures

Nastassja A. Lewinski, H. Morkoç, M. Willander, 2017 .

Purity of GaAs grown by LPE in a graphite boat

H. Morkoç, L. Eastman, 1976 .

A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n/sup +/-InAs cap layer on InP(n) grown by molecular beam epitaxy

H. Morkoç, C. Peng, C. Litton, 1988, IEEE Electron Device Letters.

Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wells

H. Morkoç, D. Huang, T. Henderson, 1987 .

High-speed performance of InP/In0.53Ga0.47As/InP double-heterojunction bipolar transistors

H. Morkoç, T. Won, 1988 .

Solid‐state reaction‐mediated low‐temperature bonding of GaAs and InP wafers to Si substrates

H. Morkoç, G. Zhou, K. Hsieh, 1994 .

Wafer Bonding for Hybrid Circuit Technology Using Solid-State Reactions

H. Morkoç, M. Lin, G. Zhou, 1993 .

Deep Centers in a Free-Standing GaN Layer

H. Morkoç, D. Look, Kyu-Pil Lee, 2001 .

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Hadis Morkoç, R. Fischer, W. Kopp, 1986 .

Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates

H. Morkoç, D. Huang, G. Munns, 1987 .

Photoluminescence microscopy of epitaxial GaAs on Si

H. Morkoç, P. Gourley, Sulin Zhang, 1987 .

Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy

H. Morkoç, N. Ōtsuka, R. Houdré, 1987 .

Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates

M. I. Aksun, H. Morkoç, L. Erickson, 1986 .

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

H. Morkoç, R. Houdré, G. Munns, 1986 .

Structural properties of GaAs on Si and Ge substrates

H. Morkoç, W. Masselink, J. Klem, 1986 .

D. C. Reynolds, H. Morkoç, D. Look, 1997 .

GaN Resistive Gas Sensors for Hydrogen Detection

H. Morkoç, Y. Moon, J. Wolan, 2006 .

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

H. Morkoç, W. Kim, A. Botchkarev, 1997 .

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1998 .

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

H. Morkoç, K. Evans, Ü. Özgür, 2009 .

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

H. Morkoç, L. Eastman, W. Schaff, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

H. Morkoç, V. Avrutin, Ü. Özgür, 2012 .

InAlN‐barrier HFETs with GaN and InGaN channels

H. Morkoç, J. Xie, J. Leach, 2009 .

Investigation of current-voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures

Hadis Morkoç, P. Paul Ruden, Xianfeng Ni, 2007, SPIE OPTO.

Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

H. Morkoç, V. Kasliwal, Ü. Özgür, 2007 .

Luminescence properties of defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Use of a superlattice to enhance the interface properties between two bulk heterolayers

W. G. Lyons, T. Drummond, D. Arnold, 1983 .

Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

H. Z. Chen, H. Morkoç, A. Yariv, 1987 .

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

W. G. Lyons, T. Drummond, H. Morkoç, 1982 .

Thermal quenching of the yellow luminescence in GaN

H. Morkoç, V. Avrutin, M. Reshchikov, 2018 .

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

H. Morkoç, Y. Makarov, V. Avrutin, 2016, Scientific Reports.

High-Speed Phenomena in GaAs Multiple-Quantum-Well Structures

H. Gibbs, H. Morkoç, N. Peyghambarian, 1987 .

Effect of UV exposure on the surface charge behavior for GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2010, OPTO.

Role of the surface in the electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009 .

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Prospects of High-Speed Semiconductor Devices

H. Morkoç, N. Chand, 1985 .

A new Al0.3Ga0.7As/GaAs modulation-doped FET

T. Drummond, W. Kopp, R. Fischer, 1982, IEEE Electron Device Letters.

A novel normally‐off camel diode gate GaAs field‐effect transistor

T. Drummond, W. Kopp, H. Morkoç, 1982 .

Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

H. Morkoç, J. Lin, Hongxing Jiang, 1998 .

Transmission-line matrix method for solving the multidimensional continuity equation

H. Morkoç, G. Gao, X. Gui, 1993 .

Simulation study of peak junction temperature and power limitation of AlGaAs/GaAs HBTs under pulsed and CW operation

H. Morkoç, G. Gao, X. Gui, 1992, IEEE Electron Device Letters.

Zinc oxide materials and devices grown by MBE

H. Morkoç, V. Avrutin, Ü. Özgür, 2013 .

Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs

H. Morkoç, Ü. Özgür, Huiyong Liu, 2010 .

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

H. Morkoç, E. Haller, Z. Liliental-Weber, 1996 .

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Hadis Morkoç, Xianfeng Ni, J. Xie, 2008, SPIE OPTO.

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Shuji Nakamura, Hadis Morkoç, Pierre Lefebvre, 1999 .

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

H. Morkoç, V. Avrutin, Ü. Özgür, 2018 .

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

H. Morkoç, S. Doğan, M. Reshchikov, 2004 .

Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO‐Based Hybrid Devices

H. Morkoç, R. Shimada, R. Shimada, 2011 .

Anomalous shifts of blue and yellow luminescence bands in MBE-grown ZnO films

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes

H. Morkoç, S. Strite, D. Mui, 1991 .

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Modulation‐Doped Field‐Effect Transistors (MODFET)

H. Morkoç, C. Zhu, R. Ferreyra, 2014 .

Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors

Hadis Morkoç, G. B. Gao, H. Morkoç, 1992 .

Measurement of AlxGa1‐xN Refractive Indices

H. Morkoç, Ü. Özgür, H. Everitt, 2001 .

General Properties of ZnO

H. Morkoç, Ü. Özgür, 2009 .

Characterization of pseudomorphic InGaAs/AlGaAs MODFET structures grown by molecular beam epitaxy

H. Morkoç, N. Ōtsuka, T. Henderson, 1987, 1987 International Electron Devices Meeting.

Growth of High-Quality Pb(ZrxTi1-x)O3 Films by Peroxide MBE and Their Optical and Structural Characteristics

H. Morkoç, T. Kang, V. Avrutin, 2006 .

p-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ultraviolet detectors

H. Morkoç, R. Alfano, D. Huang, 2003 .

Plasma nitridation of thin Si layers for GaAs dielectrics

H. Morkoç, A. Rockett, D. Park, 1999 .

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy

H. Morkoç, T. Won, S. Agarwala, 1989 .

Characteristics of Shielded Microstrip Lines on GaAs-Si at Millimeter-Wave Frequencies

M. I. Aksun, H. Morkoç, 1987 .

Structural properties of GaAs on (001) oriented Si and Ge substrates

R. Fischer, H. Morkoç, D. Neumann, 1987 .

High Speed GaAs Based Devices on Si Substrates

H. Morkoç, 1986 .

III–V semiconductors on Si substrates: New directions for heterojunction electronics

R. Fischer, H. Morkoç, J. Klem, 1986 .

Characteristics of Deep Traps in Freestanding GaN

H. Morkoç, D. Look, Seong-Ju Park, 2001 .

Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy

Hadis Morkoç, A. Y. Cho, Charles A. Evans, 1980 .

High‐purity GaAs and Cr‐doped GaAs epitaxial layers by MBE

H. Morkoç, A. Cho, 1979 .

NEAR ULTRAVIOLET LUMINESCENCE OF BE DOPED GAN GROWN BY REACTIVE MOLECULAR BEAM EPITAXY USING AMMONIA

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

H. Morkoç, S. Doğan, Y. Moon, 2004 .

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

Hadis Morkoç, H. Morkoç, S. Strite, 1990 .

AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy

H. Morkoç, S. Strite, M. Unlu, 1990, IEEE Electron Device Letters.

Properties of the main Mg-related acceptors in GaN from optical and structural studies

H. Morkoç, J. Bergman, H. Amano, 2014 .

Long-lasting photoluminescence in freestanding GaN templates

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2003 .

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1996 .

Dielectric functions and electronic band structure of lead zirconate titanate thin films

P. G. Snyder, H. Morkoç, Youn-Seon Kang, 2005 .

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2006 .

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

W. Kopp, H. Morkoç, W. Masselink, 1985 .

Enhanced and quenched Raman scattering by interface phonons in semiconductor superlattices: What are the defects?

H. Morkoç, R. Merlin, K. Ploog, 1988 .

Characterization of extremely low contact resistances on modulation-doped FET's

H. Morkoç, J. Klem, A. Ketterson, 1985, IEEE Transactions on Electron Devices.

Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures

H. Morkoç, J. Klem, A. Ketterson, 1985 .

Determination of carrier saturation velocity in high-performance InyGa1-yAs/AlxGa1-xAs modulation-doped field-effect transistors (0 ≤ y ≤ 0.2)

W. Kopp, H. Morkoç, W. Masselink, 1986, IEEE Electron Device Letters.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Photoionization study of deep centers in GaN∕AlGaN multiple quantum wells

H. Morkoç, R. Alfano, W. Wang, 2010 .

Photoluminescence and Excitation Spectra of Deep Defects in GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

Unstable luminescence in GaN and ZnO

H. Morkoç, Y. Moon, J. Nause, 2006 .

Blue Luminescence in Undoped and Zn-doped GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2002 .

Stimulated emission in a degenerately doped GaAs quantum well

T. Drummond, H. Morkoç, N. Holonyak, 1982 .

High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

H. Morkoç, O. Aktas, S. Mohammad, 1997, 1997 55th Annual Device Research Conference Digest.

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

Characterization of high purity GaAs grown by molecular beam epitaxy

H. Morkoç, C. Weisbuch, R. Dingle, 1982 .

Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate

K. Vahala, H. Morkoç, A. Yariv, 1989 .

Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs‐GaAs multiple‐quantum‐well structures

J. Chyi, J. M. Cowley, H. Morkoç, 1990 .

Strained Layer Lasers in the InGaAs/GaAs/AlGaAs Heterostructure System

H. Morkoç, 1991 .

Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy

H. Z. Chen, H. Morkoç, A. Yariv, 1987 .

Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wells

H. Morkoç, P. Lefebvre, B. Gil, 1999 .

Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose

H. Morkoç, A. Yankovich, A. Kvit, 2014, Microscopy and Microanalysis.

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2002 .

Optical properties of GaN with Ga and N polarity

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2001 .

Group III Nitrides

H. Morkoç, A. Teke, R. Ferreyra, 2017 .

Morphology and optical properties of ZnO nanorods grown by catalyst-assisted vapor transport on various substrates

H. Morkoç, P. Ruterana, V. Avrutin, 2006 .

Regrowth of ZnO thin film with high surface flatness and enhanced optical properties on annealed buffer layers by rf sputtering deposition

H. Morkoç, Chunli Liu, 2010 .

Electronic Band Structure and Polarization Effects

H. Morkoç, 2009 .

Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure

E. Rowe, H. Morkoç, V. Avrutin, 2010 .

Preparation of Sapphire for High Quality III-Nitride Growth

H. Morkoç, J. Cui, F. Yun, 2000 .

Light‐Emitting Diodes and Lighting

H. Morkoç, 2009 .

Well-width dependence of the ground level emission of GaN/AlGaN quantum wells

A. Carlo, H. Morkoç, A. Bonfiglio, 2000 .

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

E. Mendez, H. Morkoç, J. Klem, 1983 .

High-performance self-aligned gate (Al,Ga)As/GaAs MODFET's on MBE Layers grown on

H. Morkoç, D. Arch, M. Longerbone, 1986, IEEE Electron Device Letters.

High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

H. Morkoç, N. Ōtsuka, C. Choi, 1986 .

Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

H. Morkoç, N. Ōtsuka, C. Choi, 1986 .

Optical properties of GaAs on (100) Si using molecular beam epitaxy

G. Y. Robinson, H. Morkoç, W. Masselink, 1984 .

Thermally stimulated current trap in GaN

H. Morkoç, A. Salvador, D. Look, 1996 .

ZnO‐Based Dilute Magnetic Semiconductors

H. Morkoç, Ü. Özgür, 2009 .

Effect of N doping on magnetic properties of (Zn, Mn)O thin films deposited by radio frequency magnetron sputtering

H. Morkoç, Y. Moon, P. Ruterana, 2006 .

Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas

H. Morkoç, N. Biyikli, Ü. Özgür, 2006 .

A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire

H. Morkoç, Y. Moon, P. Ruterana, 2005 .

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

H. Morkoç, Y. Moon, K. Yu, 2005 .

High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact

H. Morkoç, K. Zhu, J. Leach, 2007 .

Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition

H. Morkoç, Z. Liliental-Weber, Ü. Özgür, 2007 .

Excitons bound to surface defects in GaN

H. Morkoç, M. Reshchikov, Daming Huang, 2002 .

Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction

H. Morkoç, R. Cingolani, J. Jasinski, 2001 .

Intersubband Transitions in GaN/Al x Ga 1-x N Multi Quantum Wells

M. O. Manasreh, I. Ferguson, H. Morkoç, 2004 .

16.4 Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors

H. Morkoç, C. Kayis, 2015 .

Hot-electron energy relaxation time in Ga-doped ZnO films

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors

H. Morkoç, C. Kayis, 2014 .

Electron energy relaxation in wurtzite ZnO and GaN

H. Morkoç, V. Avrutin, N. Izyumskaya, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Energy relaxation probed by weak antilocalization measurements in GaN heterostructures

H. Morkoç, N. Biyikli, J. Xie, 2009 .

Temperature dependence of Al/undoped Al0.5Ga0.5As/GaAs capacitors

M. Shur, T. Drummond, W. Kopp, 1984, IEEE Transactions on Electron Devices.

Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

H. Morkoç, O. Aktas, F. Shiwei, 2001 .

Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

H. Morkoç, W. Schaff, D. Ferry, 2005 .

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

H. Morkoç, K. Jarašiūnas, Ü. Özgür, 2013 .

Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy

G. Stillman, H. Morkoç, A. Cho, 1982 .

0.2 mm T-gate InAlAs/InGaAs MODFET with f T = 170 GHz

H. Morkoç, J. Laskar, A. Ketterson, 1990 .

Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures

W. G. Lyons, M. Shur, T. Drummond, 1982 .

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

H. Morkoç, Y. Fu, Jinqiao Xie, 2006 .

Metal Contacts to GaN

H. Morkoç, 1999 .

Optimization of (112¯0) a-plane GaN growth by MOCVD on (11¯02) r-plane sapphire

H. Morkoç, N. Biyikli, Y. Moon, 2006 .

Effect of an electric field on the luminescence of GaAs quantum wells

Leroy L. Chang, L. Esaki, R. Fischer, 1982 .

A study of GaN regrowth on the micro‐facetted GaN template formed by in‐situ thermal etching

H. Morkoç, S. Doğan, Y. Moon, 2005 .

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

H. Morkoç, V. Avrutin, Ü. Özgür, 2019, Journal of Applied Physics.

Characterization of Ag Schottky Barriers on Be0.02Mg0.26ZnO/ZnO Heterostructures

Tanner A. Nakagawara, H. Morkoç, V. Avrutin, 2018 .

Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

Tanner A. Nakagawara, H. Morkoç, V. Avrutin, 2017 .

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

H. Morkoç, P. Ruterana, V. Avrutin, 2016 .

Donor behavior of Sb in ZnO

H. Morkoç, A. Yankovich, A. Kvit, 2012 .

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

H. Morkoç, C. Baird, J. Moore, 2009 .

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

H. Morkoç, L. Chernyak, Y. Alivov, 2008 .

Blue and Yellow Luminescence in ZnO Films Grown by Peroxide MBE

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Effect of Growth Conditions on Defect-related Photoluminescence in ZnO Thin Films Grown by Plasma Assisted MBE

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

H. Morkoç, Y. Alivov, F. Qian, 2006 .

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

H. Morkoç, K. Zhu, V. Avrutin, 2006 .

Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films

H. Morkoç, N. Biyikli, J. Xie, 2006 .

Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures

H. Morkoç, L. Chernyak, Y. Alivov, 2006 .

High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

H. Morkoç, Ü. Özgür, H. Everitt, 2004 .

Influence of ZnO thin film crystallinity on in vitro biocompatibility.

Nastassja A. Lewinski, H. Morkoç, V. Avrutin, 2018, Toxicology research.

Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

H. Morkoç, S. Chevtchenko, Jinqiao Xie, 2007 .

Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance

Hadis Morkoç, W. Kopp, H. Morkoç, 1987 .

Determination of 2-D Electron-gas carrier mobility in short gate-length MODFET's by direct elimination of parasitic resistance effects

W. Kopp, H. Morkoç, S. Liu, 1985, IEEE Electron Device Letters.

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics

Naresh Chand, Hadis Morkoç, H. Morkoç, 1986 .

Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors

Hadis Morkoç, P. Paul Ruden, Kyung-Ah Son, 2006 .

Reactive ion etch damage on GaN and its recovery

Sang-Jun Cho, Hadis Morkoç, Xianfeng Ni, 2006 .

Transient photovoltage in GaN as measured by atomic force microscope tip

H. Morkoç, M. Reshchikov, S. Sabuktagin, 2004 .

Effect of thermal treatment on ZnO substrate for epitaxial growth

H. Morkoç, Xing fa Gu, J. Nause, 2004 .

Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy

Hadis Morkoç, R. Fischer, W. G. Lyons, 1983 .

Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors

J. Chyi, H. Morkoç, S. Mohammad, 1991 .

Self-aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxy

H. Morkoç, T. Won, 1989, IEEE Electron Device Letters.

Self- Aligned Ino. 52Alo.4sAs/Ino. 53G~~47As Heterojunction Bipolar Transistors with Graded Interface on Semi-Insulating InP Grown by Molecular

H. Morkoç, T. Won, 1989 .

GaAs‐Si heterojunction bipolar transistor

H. Morkoç, Jack Chen, M. Unlu, 1988 .

Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors

R. Fischer, H. Morkoç, N. Chand, 1985 .

Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffers

T. Drummond, R. Fischer, H. Morkoç, 1984 .

Improved AlxGa1−xAs bulk lasers with superlattice interfaces

T. Drummond, W. Kopp, R. Fischer, 1984 .

Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

T. Drummond, R. Fischer, H. Morkoç, 1982 .

Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions

T. Drummond, R. Fischer, H. Morkoç, 1982 .

Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices

Hadis Morkoç, H. Morkoç, M. Lin, 1994 .

Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices

H. Morkoç, C. Peng, G. Ji, 1988 .

GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

J. Chyi, H. Morkoç, C. Peng, 1989 .

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

Hadis Morkoç, Ravi Droopad, David K. Ferry, 1994 .

Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1−xAs-based p-i-n semiconductor nanostructure

H. Morkoç, D. Ferry, J. Kiang, 2006 .

An alternative material for transparent antennas for commercial and medical applications

Hadis Morkoç, Ümit Özgür, Erdem Topsakal, 2017 .

Emerging gallium nitride based devices

Hadis Morkoç, H. Morkoç, A. Salvador, 1995, Proc. IEEE.

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

H. Morkoç, D. Look, Z. Fang, 2000 .

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

H. Morkoç, D. Look, Wook Kim, 1999 .

In situ transmission electron microscopy of AlN growth by nitridation of (0001) α-Al2O3

H. Morkoç, S. Pekin, J. Gibson, 1998 .

Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells

H. Morkoç, A. Salvador, M. Smith, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

In-Situ Observation Of Aln Formation During Nitridation Of Sapphire By Ultrahigh Vacuum Transmission Electron Microscopy

H. Morkoç, S. Pekin, J. Gibson, 1997 .

Microstructures of AlN Buffer Layers for the Growth of GaN on (0001) Al2O3

H. Morkoç, S. Mohammad, J. Gibson, 1996 .

High-transconductance GaN MODFETs

H. Morkoç, A. Salvador, O. Aktas, 1995, Proceedings of International Electron Devices Meeting.

Measurements of gate voltage dependence of electron mobility in delta -doped HFET's

M. Shur, H. Morkoç, A. Gopinath, 1993 .

Nonlinear parasitics in MODFETs and MODFET I-V characteristics

H. Morkoç, S. Bibyk, P. Roblin, 1988 .

The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

W. Kopp, H. Morkoç, G. Bosman, 1986, IEEE Transactions on Electron Devices.

The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures

T. Drummond, R. Fischer, H. Morkoç, 1984 .

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature

M. Shur, T. Drummond, D. Arnold, 1983 .

Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures

T. Drummond, W. Kopp, H. Morkoç, 1982 .

Modulation-doped (Al,Ga)As/GaAs FETs with high transconductance and electron velocity

W. G. Lyons, T. Drummond, W. Kopp, 1982 .

Hot-electron noise spectroscopy for HFET channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Hot-electron noise and energy relaxation in wurtzite ZnO

H. Morkoç, V. Avrutin, A. Matulionis, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

H. Morkoç, J. Leach, A. Matulionis, 2011 .

Field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure: A subpicosecond time-resolved Raman probe

H. Morkoç, A. Salvador, D. Ferry, 1997 .

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Cagliyan Kurdak, S. S. Park, Hadis Morkoç, 2001 .

Unusual properties of the dominant acceptor in freestanding GaN

H. Morkoç, M. Reshchikov, K. Y. Lee, 2003 .

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2002 .

Photoluminescence study of deep-level defects in undoped GaN

H. Morkoç, M. Reshchikov, Soonoh Park, 2001 .

Photoluminescence of GaN grown by molecular- beam epitaxy on a freestanding GaN template

D. C. Reynolds, S. S. Park, H. Morkoç, 2001 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

H. Morkoç, J. Xie, Ü. Özgür, 2007 .

Thermal dependence of HBT high-frequency performance

Hadis Morkoç, G. B. Gao, H. Morkoç, 1990 .

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Fan Zhang, Hadis Morkoç, V. Avrutin, 2013 .

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2009 .

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

D. C. Reynolds, H. Morkoç, David J. Smith, 1997 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .

Excitonic recombination in GaN grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1995 .

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1996 .

Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Robert R. Alfano, Hadis Morkoç, Feng Yun, 2002 .

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

H. Morkoç, J. Xie, Y. Moon, 2006 .

Unusual transient photocapacitance in GaN/AlGaN multi-quantum wells

H. Morkoç, R. Alfano, W. Wang, 2004 .

A General Nonlithographic Method for Producing Nanodots by RIE Etching

H. Morkoç, J. Leach, 2007 .

Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions

H. Morkoç, Z. Liliental-Weber, X. Ni, 2007 .

Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

H. Morkoç, V. Avrutin, N. Izyumskaya, 2016 .

Photocurrent spectroscopy of lattice‐matched superlattice electrodes in photoelectrochemical cells

H. Morkoç, J. Klem, J. Turner, 1987 .

Photon energy dependence of bulk and interface phonons frequencies of a thin layer superlattice

H. Morkoç, G. Benedek, V. Gridin, 1989 .

Resonant Fowler–Nordheim tunneling in n−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors

R. Fischer, H. Morkoç, P. Solomon, 1984 .

Semiconductor Lasers: Light Amplification by Stimulated Emission of Radiation

H. Morkoç, 2013 .

Temperature dependence of sharp line photoluminescence in GaAsAl0.25Ga0.75As multiple quantum well structures

D. C. Reynolds, R. Fischer, H. Morkoç, 1985 .

Optimal thickness for Si interlayer as diffusion barrier at the Si_3N_4/GaAs interface: A transmission electron microscopy study

H. Morkoç, D. Mui, J. Gibson, 1995 .

Surface-Emitting Lasers : 4 Recent Progress in GaN-Based 5 Vertical Cavity Surface-Emitting 6 Lasers and GaN-/ ZnO-Based 7

H. Morkoç, R. Shimada, 2009 .

Optical transitions and acceptor binding energies in GaAs/AlxGa1−xAs single quantum well heterostructures grown by molecular beam epitaxy

D. C. Reynolds, H. Morkoç, W. Masselink, 1985 .

High-frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy

H. Z. Chen, H. Morkoç, A. Yariv, 1988 .

Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy

T. Drummond, H. Morkoç, A. Cho, 1982 .

Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy

D. C. Reynolds, H. Morkoç, J. Klem, 1986 .

Acceptor Raman scattering in GaAs-AlxGa1−xAs quantum-well structures

H. Morkoç, D. Huang, R. Merlin, 1987 .

Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells

D. C. Reynolds, H. Morkoç, W. Masselink, 1986 .

Electric field-induced quenching of luminescence in quantum wells

L. Esaki, E. Mendez, R. Fischer, 1983 .

Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells

H. Morkoç, J. Klem, K. Tsen, 1986 .

Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaAs quantum well heterostructure laser (λ≳7270 Å)

T. Drummond, H. Morkoç, N. Holonyak, 1982 .

Growth of gallium arsenide on hydrogen passivated Si with low‐temperature treatment (∼600 °C)

H. Morkoç, A. Salvador, S. Fang, 1991 .

TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth

W. Kopp, R. Fischer, H. Morkoç, 1985 .

Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure

H. Morkoç, S. Pau, K. Syassen, 1998 .

Characterization of graded interface InxGa1−xAs/In0.52Al0.48As (0.53

H. Morkoç, S. Sinha, C. Peng, 1987 .

InGaAs/InAlAs hot‐electron transistor

H. Morkoç, C. Peng, Ji Chen, 1986 .

In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN/GaN cracks

H. Morkoç, David J. Smith, Lin Zhou, 2006 .

Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different?

H. Morkoç, M. O'Keefe, J. Jasinski, 2002 .

Formation mechanism and relative stability of the { 112 ¯ 0 } stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

H. Morkoç, A. Salvador, P. Ruterana, 1999 .

InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide

H. Morkoç, V. Avrutin, N. Izyumskaya, 2010 .

Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

H. Morkoç, P. Zaumseil, T. Schroeder, 2012 .

Bias-assisted photoelectrochemical etching of p-GaN at 300 K

H. Morkoç, C. Cai, M. Nathan, 2000 .

High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with MgO Buffer

H. Morkoç, V. Avrutin, Ü. Özgür, 2019, Frontiers in Optics + Laser Science APS/DLS.

'Diffusion' of carriers in a semiconductor quantum well

H. Morkoç, J. Wolfe, H. Yoon, 1992 .

Surface roughness of nitrided (0001) Al2O3 and AlN epilayers grown on (0001) Al2O3 by reactive molecular beam epitaxy

H. Morkoç, S. Mohammad, J. Gibson, 1997 .

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2001 .

Characterization of free-standing hydride vapor phase epitaxy GaN

S. S. Park, H. Morkoç, K. M. Jones, 2001 .

Quasi Two‐Dimensional Modeling of GaN‐Based MODFETs

A. Carlo, H. Morkoç, P. Lugli, 2001 .

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

A. Carlo, H. Morkoç, A. Bonfiglio, 1999 .

Wavelength demultiplexing heterojunction phototransistor

J. Chyi, H. Morkoç, M. Unlu, 1990 .

Transport properties of excitons in GaAs quantum wells−time‐resolved Raman probe

H. Morkoç, O. Sankey, K. Tsen, 1990 .

Interface properties of Si3N4Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers

T. Drummond, H. Morkoç, N. Holonyak, 1981 .

Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures

S. M. Komirenko, K. W. Kim, H. Morkoç, 2003 .

GaN‐based vertical cavities with crack‐free high‐reflectivity patterned AlGaN/GaN distributed Bragg reflectors

H. Morkoç, Ü. Özgür, J. Leach, 2009 .

Characterization of GaAs grown on Si epitaxial layers on GaAs substrates

Hadis Morkoç, N. Otsuka, H. Morkoç, 1991 .

Characteristics of Si3N4/GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers

H. Morkoç, Dae-gyu Park, Zhi Chen, 1997 .

Interface properties of Si 3 N 4 /Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Effects of uniaxial stress on the optical properties of GaAs and GaAs/Ga1−xAl1−x As single quantum wells grown on Si(001) substrates

H. Morkoç, R. Alfano, S. Fang, 1994 .

GaAs/AlGaAs multiquantum wells grown on nonpolar semiconductor substrates

R. Fischer, H. Morkoç, W. Masselink, 1985 .

GaAs/AlGaAs MODFET's grown on

W. Kopp, R. Fischer, H. Morkoç, 1984, IEEE Electron Device Letters.

Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)Ge

R. Fischer, H. Morkoç, W. Masselink, 1984 .

Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons.

H. Morkoç, A. Neogi, A. Tackeuchi, 2004, Optics letters.

Picosecond hole dynamics in GaAs grown on silicon

H. Morkoç, R. Alfano, F. Liu, 1990 .

Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation

W. G. Lyons, M. Shur, T. Drummond, 1983 .

Power and noise performance of the pseudomorphic modulation doped field effect transistor at 60 GHz

M. I. Aksun, H. Morkoç, P. Chao, 1986, 1986 International Electron Devices Meeting.

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

H. Morkoç, C. Zhu, V. Avrutin, 2013 .

Electron traps created by high temperature annealing in MBE n-GaAs

T. Drummond, H. Morkoç, A. Cho, 1981 .

Substrate dependence of InP m.e.s.f.e.t. performance

H. Morkoç, S. Hyder, J. Andrews, 1978 .

Photoluminescence of Al0.4Ga0.6As/GaAs quantum well structures prepared by molecular beam epitaxy

R. Fischer, H. Morkoç, M. Klein, 1984 .

Effects of MBE growth conditions on carbon contamination in GaAs

R. Fischer, H. Morkoç, M. Klein, 1983 .

Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions

W. J. Choyke, H. Morkoç, Y. Shishkin, 2001 .

Miniband dispersion in GaAs/AlxGa1−xAs superlattices with wide wells and very thin barriers

H. Morkoç, D. Arent, C. Hoof, 1988 .

Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy

D. C. Reynolds, R. Fischer, H. Morkoç, 1985 .

Material-based comparison for power heterojunction bipolar transistors

H. Morkoç, G. Gao, 1991 .

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

H. Morkoç, Hongxing Jiang, W. Chow, 1998 .

A safety system for GSMBE part II

H. Morkoç, D. Biswas, 1992 .

Subpicosecond Optical Non-linearities in GaAs Multiple-Quantum-Well Structures

H. Gibbs, H. Morkoç, W. Masselink, 1986 .

Gallium Nitride Materials and Devices II

Hadis Morkoç, Cole W. Litton, H. Morkoç, 2007 .

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

H. Morkoç, A. Yankovich, A. Kvit, 2012 .

Optical properties of the organic-inorganic hybrid perovskite C H 3 N H 3 Pb I 3 : Theory and experiment

H. Morkoç, D. Demchenko, V. Avrutin, 2016 .

High-field electron transport in doped ZnO

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

H. Morkoç, A. Yankovich, A. Kvit, 2011 .

Highly conductive and optically transparent GZO films grown under metal‐rich conditions by plasma assisted MBE

H. Morkoç, V. Avrutin, N. Izyumskaya, 2010 .

Bulk ZnO: Current Status, Challenges, and Prospects Asmassproductionofzincoxideappearstobeapproachingcommercialviability,thick ZnO crystals are being fabricated for use in the production of optoelectronic devices.

H. Morkoç, V. Avrutin, D. Silversmith, 2010 .

X‐ray evidence for a terraced GaAs/AlAs superlattice

H. Morkoç, D. Neumann, H. Zabel, 1983 .

Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Raman Studies of Phonons in GaAs/AlGaAs Superlattices

H. Morkoç, M. Klein, J. Klem, 1988 .

High-resolution photoluminescence studies of GaAs/GaAlAs multi-quantum-well structures grown by molecular beam epitaxy

D. C. Reynolds, R. Fischer, H. Morkoç, 1986 .

Rapid thermal annealing of modulation‐doped AlxGa1−xAs/GaAs heterostructures for device applications

H. Morkoç, J. Klem, T. Henderson, 1984 .

An explanation for anomalous donor activation energies in Al0.35Ga0.65As

W. G. Lyons, T. Drummond, H. Morkoç, 1982 .

Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on top

T. Drummond, R. Fischer, H. Morkoç, 1982 .

Demonstration of a new oscillator based on real‐space transfer in heterojunctions

H. Morkoç, K. Hess, B. Streetman, 1982 .

Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures

T. Drummond, W. Kopp, R. Fischer, 1982 .

Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures

T. Drummond, H. Morkoç, A. Cho, 1982 .

Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers

S. Banerjee, H. Morkoç, K. Hess, 1981 .

Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures

T. Drummond, W. Kopp, H. Morkoç, 1981 .

Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy

T. Drummond, H. Morkoç, K. Hess, 1981 .

Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields

T. Drummond, W. Kopp, H. Morkoç, 1981 .

Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities

T. Drummond, W. Kopp, H. Morkoç, 1981 .

Current Transport in Modulation Doped (Al,Ga)As/GaA terostructuresr Applications to eed FET's

H. Morkoç, 1981 .

Growth conditions to achieve mobility enhancement in AlxGa1-xAs-GaAs heterojunctions by m.b.e.

T. Drummond, H. Morkoç, A. Cho, 1980 .

Binding energies of acceptors in GaAs- Al x Ga 1 − x As quantum wells

H. Morkoç, W. Masselink, Yia-Chung Chang, 1983 .

Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy

T. Drummond, R. Fischer, H. Morkoç, 1982 .

Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure

H. Morkoç, J. Leach, Ç. Kurdak, 2010 .

Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure

W. Kopp, H. Morkoç, G. Bosman, 1986, IEEE Electron Device Letters.

The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures

W. Kopp, H. Morkoç, W. Masselink, 1986, IEEE Transactions on Electron Devices.

Doping Asymmetry Problem in ZnO: Current Status and Outlook

Hadis Morkoç, Vitaliy Avrutin, Donald J. Silversmith, 2009, Proceedings of the IEEE.

Effect of Thermal Annealing on Deep and Near-band Edge Emission from ZnO Films Grown by Plasma-assisted MBE

H. Morkoç, S. Novak, V. Avrutin, 2008 .

Hall effect and mobility in heterojunction layers

T. Drummond, H. Morkoç, K. Hess, 1982 .

High‐speed GaAs p‐i‐n photodiodes grown on Si substrates by molecular beam epitaxy

H. Z. Chen, H. Morkoç, A. Yariv, 1988 .

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

H. Morkoç, A. Salvador, M. Khan, 1997 .

Potential applications of III–V nitride semiconductors

H. Morkoç, 1997 .

Recent developments in high speed heterojunction devices: a tutorial

H. Morkoç, 1990, IEEE International Symposium on Circuits and Systems.

Si as a diffusion barrier for Ge/GaAs heterojunctions

H. Morkoç, S. Strite, M. Unlu, 1990 .

Crystalline structure of mixed Ga 1- x Al x As and GaP 1- x As x crystals

H. Morkoç, R. Beserman, M. Teicher, 1984 .

Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy

H. Morkoç, A. Salvador, W. Kim, 1997 .

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

C. K. Inoki, H. Morkoç, T. Kuan, 2002 .

High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer

H. Morkoç, J. Leach, C. Litton, 2006 .

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

W. J. Choyke, H. Morkoç, Y. Shishkin, 2003 .

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

H. Morkoç, A. Salvador, J. Lin, 1997 .

High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

H. Morkoç, Xing fa Gu, T. Kang, 2006 .

Growth of Pb(Ti,Zr)O3 thin films by metal-organic molecular beam epitaxy

H. Morkoç, V. Avrutin, N. Izyumskaya, 2009 .

Quasi‐donor‐acceptor pair photoluminescence emission in GaxIn1−xAs/InP

H. Morkoç, C. Peng, P. W. Yu, 1989 .

Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy

J. Chyi, H. Morkoç, C. Litton, 1988 .

Optically pumped mode‐locked multiple quantum well laser

H. Morkoç, B. Valk, G. Munns, 1986 .

Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

T. Drummond, H. Morkoç, N. Holonyak, 1981 .

Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer

S. W. Kirchoefer, E. Rowe, H. Morkoç, 2009 .

Screw Dislocations in GaN Grown by Different Methods

H. Morkoç, M. O'Keefe, J. Jasinski, 2003, Microscopy and Microanalysis.

High‐field electron‐drift velocity and temperature in gallium phosphide

H. Morkoç, V. Arora, D. Mui, 1987 .

GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity

H. Morkoç, F. Y. Huang, 1994 .

Wavelength discriminating optical switch

H. Morkoç, S. Strite, M. Unlu, 1991, IEEE Photonics Technology Letters.

Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1998 .

Microstructural study of Mg-doped p-type GaN: Correlation between high-resolution electron microscopy and Raman spectroscopy

H. Morkoç, David J. Smith, K. Tsen, 1997 .

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1997 .

Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films

S. W. Kirchoefer, E. Rowe, H. Morkoç, 2009 .

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

H. Morkoç, V. Avrutin, Ü. Özgür, 2018, Journal of visualized experiments : JoVE.

Determination of Impurity and Carrier Concentrations

H. Morkoç, 1999 .

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

H. Morkoç, V. Avrutin, Ü. Özgür, 2021, Applied Physics Letters.

Determination of hot-electron drift velocity in (Be)ZnMgO/ZnO 2DEG channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2022, Physica Scripta.

Frequency dependent breakdown of the dissipationless state in the quantum Hall effect

H. Morkoç, M. Levy, B. Sarma, 1988 .

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

J. Chyi, H. Morkoç, A. Yariv, 1988 .

Microwave ferrites, part 1: fundamental properties

Hadis Morkoç, Ü. Özgür, Yahya Alivov, 2009 .

Self-assembled deoxyguanosine based molecular electronic device on GaN substrates

Sang-Jun Cho, Jianyou Li, Hadis Morkoç, 2008 .

Ferromagnetism of ZnO and GaN: A Review

Hadis Morkoç, F. Yun, H. Morkoç, 2005 .

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

Hadis Morkoç, Andrei Botchkarev, Angus Rockett, 1996 .

Materials properties, physics and growth

H. Morkoç, 2008 .

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

Proposed explanation of the anomalous doping characteristics of III–V nitrides

H. Morkoç, A. Salvador, S. Mohammad, 1997 .

III-Nitride semiconductor growth by MBE: Recent issues

H. Morkoç, 2001 .

Growth of Nitride Semiconductors

H. Morkoç, 1999 .

Progress and prospects for GaN and the III–V nitride semiconductors

H. Morkoç, M. Lin, S. Strite, 1993 .

Nitride Semiconductors and Devices

Hadis Morkoç, H. Morkoç, 1999 .

Emergence of high quality sputtered III-nitride semiconductors and devices

H. Morkoç, H. Fujioka, V. Avrutin, 2019, Semiconductor Science and Technology.

Recent Development of Boron Nitride towards Electronic Applications

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2017 .

Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

Hadis Morkoç, Hartmut Zabel, R. Fischer, 1986 .

Unusual luminescence lines in GaN

S. S. Park, H. Morkoç, J. Jasinski, 2003 .

Lifetimes, ionization energies, and discussion of the emission lines in the 1.5040-1.5110-eV range in GaAs

D. C. Reynolds, R. Fischer, H. Morkoç, 1986 .

ZnO Devices and Applications: A Review of Current Status and Future Prospects

Daniel Hofstetter, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

Schottky barriers and ohmic contacts on n-type InP based compound semiconductors for microwave FET's

H. Morkoc, T. Drummond, H. Morkoç, 1981, IEEE Transactions on Electron Devices.

Negative differential resistance through real‐space electron transfer

Karl Hess, Hadis Morkoç, Hisashi Shichijo, 1979 .

Electrical conduction in platinum–gallium nitride Schottky diodes

Hadis Morkoç, Andrei Botchkarev, H. Morkoç, 1996 .

Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field‐effect transistors

H. Morkoç, S. Mohammad, F. Stengel, 1996 .

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator–semiconductor devices

H. Morkoç, A. Rockett, J. Abelson, 1996 .

Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition

Hadis Morkoç, Meng Tao, S. Noor Mohammad, 1996 .

NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

T. Drummond, W. Kopp, R. Fischer, 1983 .

Recent developments in ohmic contacts for III-V compound semiconductors

Hadis Morkoç, G. B. Gao, T. C. Shen, 1992 .

Study of GaN films by pulsed laser photoelectron spectroscopy

Richard T. Williams, H. Morkoç, A. Wickenden, 1998 .

High-κ dielectrics and advanced channel concepts for Si MOSFET

Hadis Morkoç, Yahya Alivov, H. Morkoç, 2008 .

General Properties of Nitrides

H. Morkoç, 1999 .

Characterization of InxGa1−xP/GaAs grown by gas source molecular‐beam epitaxy (0.35≤x≤0.60) by spectroscopic ellipsometry

H. Morkoç, A. Salvador, M. Klein, 1992 .

Sequential Single-Phonon Emission in GaAs-Al x Ga 1-x As Tunnel Junctions

R. Fischer, H. Morkoç, P. Solomon, 1984 .

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

H. Morkoç, Z. Zolnai, D. Demchenko, 2015 .

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

Hadis Morkoc, Feng Yun, Daniel Johnstone, 2005, SPIE OPTO.

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

H. Morkoc, A. Crespo, M. Tapajna, 2012, IEEE Electron Device Letters.

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Hadis Morkoç, Jacob H. Leach, H. Morkoç, 2010, Proceedings of the IEEE.

Unusual Properties of the Red and Green Luminescence Bands in Ga-rich GaN

H. Morkoç, M. Reshchikov, 2004 .

Defects created in ion‐implanted Ga1−xAlxAs alloys

H. Morkoç, R. Beserman, I. Sela, 1986 .

Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates

H. Morkoç, David J. Smith, B. Sverdlov, 1995 .

GaAs MESFET's by molecular beam epitaxy

H. Morkoc, T. Drummond, H. Morkoç, 1982, IEEE Transactions on Electron Devices.

Low‐noise GaAs field‐effect transistors prepared by molecular beam epitaxy

T. Drummond, H. Morkoç, M. Omori, 1981 .

Defects in and Apllications of III-V Nitride Semiconductors

H. Morkoç, 1997 .

Growth by liquid phase epitaxy and evaluation of submicron InxGa1−xAsyP1−y layers for microwave field effect transistors

H. Morkoç, Y. Houng, 1980 .

Epitaxial relationship of MBE grown barium hexaferrite (0 0 0 1 ) films on sapphire (0 0 0 1 )

E. Rowe, H. Morkoç, V. Avrutin, 2010 .

Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy

C. O. Griffiths, H. Morkoç, M. Klein, 1994 .

Transient annealing of modulation-doped GaAs/AlxGa1-xAs heterostructures

Hadis Morkoç, H. Morkoç, T. Henderson, 1984 .

Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications

H. Morkoç, H. Ünlü, 1987 .

Characteristics of submicron gate GaAs FET's with Al0.3Ga0.7As buffers: Effects of interface quality

T. Drummond, W. Kopp, H. Morkoç, 1982, IEEE Electron Device Letters.

Interference effects probed by photoreflectance spectroscopy

H. Morkoç, D. Huang, D. Mui, 1989 .

Effect of thin Ge layer on the surface depletion in GaAs

H. Morkoç, S. Strite, A. Salvador, 1990 .

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Hadis Morkoç, Jeff Nause, Xing Gu, 2004 .

Epitaxy of highly optical efficient GaN on O and Zn face ZnO

H. Morkoç, J. Nause, B. Nemeth, 2003 .

Investigation of inversion domains in GaN by electric-force microscopy

H. Morkoç, K. M. Jones, F. Yun, 2001 .

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Hadis Morkoç, Pierre Ruterana, Andrei Botchkarev, 1997 .

Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

H. Morkoç, A. Salvador, J. Gibson, 1997 .

Stacking mismatch boundaries in GaN: Implications for substrate selection

H. Morkoç, David J. Smith, B. Sverdlov, 1997 .

Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using high-resolution electron microscopy of the 2H-AlN/6H-SiC interface

Hadis Morkoç, P. Ruterana, H. Morkoç, 1997 .

Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

H. Morkoç, A. Salvador, P. Ruterana, 1997 .

Optical properties of III nitrides grown by reactive MBE

H. Morkoç, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

H. Morkoç, A. Salvador, P. Ruterana, 1996 .

Structure of the 2H-Ain/6H-SiC Interface

H. Morkoç, P. Ruterana, G. Nouet, 1996 .

Gallium nitride epitaxy on silicon: importance of substrate preparation

H. Morkoç, M. Nayfeh, B. Sverdlov, 1995 .

Defect Microstructure of Thin Wurtzite GaN Films Grown by MBE

H. Morkoç, A. Salvador, David J. Smith, 1995 .

The Growth of Uniform Submicron GaAs Layers by Liquid Phase Epitaxy

H. Morkoç, L. Eastman, 1976 .

Energy band bowing parameter in AlxGa1-xN alloys

H. Morkoç, S. Novak, M. Reshchikov, 2002 .

Modulation-Doped Al x Ga1−x As/GaAs Heterostructures

H. Morkoç, 1985 .

Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique

H. Morkoç, Juan-Yu Yang, C. Zhu, 2013 .

Optically pumped tunable mode-locked Si-doped GaAs laser

W. Kopp, H. Morkoç, B. Valk, 1986 .

Subpicosecond Raman studies of electric-field-induced optical phonon instability in an In0.53Ga0.47As-based semiconductor nanostructure

S. M. Komirenko, H. Morkoç, D. Ferry, 2006 .

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces

Miles V. Klein, Hadis Morkoç, Yun-Chorng Chang, 1984 .

Excitonic fine structure and recombination dynamics in single-crystalline ZnO

H. Morkoç, S. Doğan, Xing fa Gu, 2004 .

Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy

R. Fischer, H. Morkoç, W. Masselink, 1985 .

The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride

F. Huet, Hadis Morkoç, Pierre Ruterana, 1999 .

Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers

Hadis Morkoç, O. Gürdal, Gert Irmer, 1999 .

Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics

H. Morkoç, A. Salvador, S. Mohammad, 1996 .

Transport studies of GaAs1−xSbx‐AlyGa1−yAs strained‐layer superlattices

H. Morkoç, D. Tsui, H. Wei, 1984 .

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

Hadis Morkoç, Romuald Houdré, G. Ji, 1987 .

Self-consistent simulation of Stark shift of intersubband transition in modulation-doped step quantum wells

H. Morkoç, F. Y. Huang, Lieming Li, 1993 .

GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

Hadis Morkoç, Daming Huang, Michael A. Reshchikov, 2002 .

An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy

W. J. Choyke, H. Morkoç, S. Strite, 1991 .

Near-field optical spectroscopy and microscopy of self-assembled GaN∕AlN nanostructures

Motoichi Ohtsu, Brian P. Gorman, Hadis Morkoç, 2005 .

Electroabsorption studies on GaAs asymmetric coupled quantum wells

H. Morkoç, A. Salvador, M. Unlu, 1990 .

Two-dimensional drift-diffusion simulation of GaN HFETs

Hadis Morkoç, Q. Fan, H. Morkoç, 2011, OPTO.

Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs)

H. Morkoç, J. Leach, 2008 .

Growth Structure, and Optical Properties of III-Nitride Quantum Dots

H. Morkoç, A. Neogi, M. Kuball, 2003 .

Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures

D. C. Reynolds, R. Fischer, H. Morkoç, 1984 .

Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Hongxing Jiang, 1996 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

Optical Processes in Nitride Semiconductors

H. Morkoç, 1999 .

Deep‐center hopping conduction in GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Ultrafast all-optical gate with subpicosecond on and off response time

Nasser N Peyghambarian, Hyatt M. Gibbs, Hadis Morkoç, 1986 .

School of Materials Engineering

H. Morkoç, New Mexico., J. Klem, 2017 .

GaAs/GaAs1−ySby strained‐layer superlattices grown by molecular beam epitaxy

H. Morkoç, J. Klem, N. Ōtsuka, 1985 .

A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions

Katsumi Kishino, H. Morkoç, H. Morkoç, 1992 .

Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

M. O. Manasreh, H. Morkoç, G. Salamo, 2006 .

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

H. Morkoç, D. Hofstetter, E. Baumann, 2006 .

Raman scattering in superlattices: Anisotropy of polar phonons

Miles V. Klein, H. Morkoc, Alfred Y. Cho, 1980 .

Photoluminescence from carriers confined at a GaxIn1−xAs‐InP single heterojunction interface

H. Morkoç, C. Peng, P. W. Yu, 1989 .

Inelastic light scattering in GaAsAlAs superlattices

B. H. Bairamov, H. Morkoç, M. Klein, 1989 .

Two charge states of the CN acceptor in GaN: Evidence from photoluminescence

H. Morkoç, D. Demchenko, A. Strittmatter, 2018, Physical Review B.

Temperature dependent behavior of the SPV for n-type GaN

Hadis Morkoç, M. A. Reshchikov, Huiyong Liu, 2012, OPTO.

Nitride Semiconductor Devices: Fundamentals and Applications

Hadis Morkoç, H. Morkoç, 2013 .

Site symmetry approach to lattice dynamics of semiconductor superlattices

B. H. Bairamov, H. Morkoç, M. Klein, 1991 .

Superlattice electronic density of states near the Q-well's top

H. Morkoç, V. Gridin, R. Beserman, 1987 .

Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Hadis Morkoç, Jacob H. Leach, J. Liberis, 2011 .

Exciton localization in vertically and laterally coupled GaN/AlN quantum dots.

H. Morkoç, A. Neogi, A. Tackeuchi, 2005, Nano letters.

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013 .

On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

H. Morkoç, F. Zhang, V. Avrutin, 2011 .

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, V. Avrutin, 2010 .

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

Xing Li, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

New twists in LEDs and HFETs based on nitride semiconductors

H. Morkoç, Ü. Özgür, J. Leach, 2010 .

On carrier spillover in c- and m-plane InGaN light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2010, OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2009, OPTO.

On carrier spillover in c- and m-plane InGaN light emitting diodes

H. Morkoç, K. Evans, Ü. Özgür, 2009 .

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2009 .

On the Light Emission in GaN Based Heterostructures at High Injection

H. Morkoç, K. Evans, V. Avrutin, 2009 .

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

PICOSECOND RAMAN STUDIES OF THE ELECTRON-PHONON INTERACTIONS IN ALXGA1-XAS: NONMONOTONIC DEPENDENCE UPON THE ALLOY COMPOSITION

Hadis Morkoç, David K. Ferry, H. Morkoç, 1998 .

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

Hadis Morkoç, Robert E. Thorne, A. Y. Cho, 1982 .

Above barrier doublets in GaAs/AlxGa1−xAs superlattices

H. Morkoç, C. Tu, J. Schulman, 1987 .

Band lineup in GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

J. Chyi, H. Morkoç, D. Huang, 1988 .

Binding energies of acceptors in GaAs–AlxGa1−xAs quantum wells

H. Morkoç, W. Masselink, Yia-Chung Chang, 1984 .

High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

H. Z. Chen, H. Morkoç, A. Yariv, 1989 .

Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide

H. Morkoc, H. Morkoç, V. Arora, 1987, IEEE Transactions on Electron Devices.

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

Hadis Morkoç, Vijay K. Arora, H. Morkoç, 1987 .

Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

Hadis Morkoç, David J. Smith, N. Teraguchi, 1993 .

Size dependence of carrier recombination efficiency in GaN quantum dots

H. Morkoc, A. Neogi, H. Morkoç, 2005, IEEE Transactions on Nanotechnology.

Growth and Investigation of GaN/AlN Quantum Dots

H. Morkoç, M. Nathan, K. M. Jones, 2000 .

Electron–phonon interactions in the wide band‐gap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Magnetic anisotropy and crystalline texture in BaO(Fe2O3)6 thin films deposited on GaN∕Al2O3

H. Morkoç, C. Vittoria, M. McHenry, 2007 .

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Hadis Morkoç, Xianfeng Ni, Q. Fan, 2006 .

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

X-ray scattering studies of surface roughness of GaAs/A1As multilayers

S. Satija, H. Morkoç, M. Sanyal, 1994 .

Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

H. Morkoç, D. Pavlidis, E. Alekseev, 2006 .

Refractive indices of wurtzite and zincblende GaN

Hadis Morkoç, B. Sverdlov, H. Morkoç, 1993 .

4H–SiC photoconductive switching devices for use in high-power applications

Stephen E. Saddow, Hadis Morkoç, C. B. Roberts, 2003 .

4 H – SiC photoconductive switching devices for use in high-power applications

H. Morkoç, D. Huang, S. Doğan, 2003 .

Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3

H. Morkoç, V. Avrutin, Ü. Özgür, 2010 .

Carrier dynamics in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Comprehensive characterization of hydride VPE grown GaN layers and templates

H. Morkoç, H. Morkoç, 2001 .

Cavity polaritons in ZnO-based hybrid microcavities

H. Morkoç, V. Avrutin, Ü. Özgür, 2008 .

Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor

H. Morkoç, S. Strite, A. L. Demirel, 1991 .

Molecular beam epitaxial growth and characterization of InSb on Si

J. Chyi, H. Morkoç, Navneet Kumar, 1989 .

Comparative study of the (0001) and (0001¯) surfaces of ZnO

H. Morkoç, Ü. Özgür, J. Moore, 2006 .

Current mapping of GaN films by conductive atomic force microscopy

H. Morkoç, R. Cingolani, R. Molnar, 2003 .

Surface plasmon enhanced UV emission in AlGaN/GaN quantum well

Motoichi Ohtsu, Hadis Morkoç, Arup Neogi, 2010 .

Spontaneous polarization and piezoelectric field in G a N / A l 0.15 Ga 0.85 N quantum wells: Impact on the optical spectra

G. Coli, A. Di Carlo, Paolo Lugli, 2000 .

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Ravindra P. Joshi, Hadis Morkoç, David K. Ferry, 1996 .

Carrier screening and polarization fields in nitride-based heterostructure devices

A. Carlo, H. Morkoç, P. Lugli, 1999 .

Determination of carrier diffusion length in GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015 .

Photon emission from avalanche breakdown in the collector junction of GaAs/AlGaAs heterojunction bipolar transistors

J. Chyi, H. Morkoç, M. Unlu, 1989 .

Breakdown behavior of GaAs/AlGaAs HBTs

H. Morkoc, Jen-Inn Chyi, G. B. Gao, 1989 .

Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

H. Morkoc, R. Fischer, O. Tejayadi, 1983, IEEE Electron Device Letters.

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Naresh Chand, Hadis Morkoç, R. Fischer, 1985 .

An emitter guard-ring structure for GaAs high-gain heterojunction bipolar transistors

H. Morkoc, R. Fischer, R. Fischer, 1985, IEEE Electron Device Letters.

Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors

H. Morkoc, A. van der Ziel, H. Morkoç, 1984, IEEE Electron Device Letters.

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

H. Morkoc, T. Drummond, H. Morkoç, 1982, IEEE Electron Device Letters.

Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Effect of thermal annealing on Cu-related green luminescence in ZnO

Hadis Morkoç, Ryoko Shimada, V. Avrutin, 2009, OPTO.

Minority charge storage characteristics of HBTs in saturation

H. Morkoç, B. Mazhari, 1993 .

COLLECTOR-EMITTER OFFSET VOLTAGE IN HETEROJUNCTION BIPOLAR TRANSISTORS

Hadis Morkoç, B. Mazhari, G. B. Gao, 1991 .

Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

J. Chyi, H. Morkoç, S. Mohammad, 1990 .

Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

H. Morkoç, T. Won, S. Agarwala, 1989, IEEE Electron Device Letters.

Pnp GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors

H. Morkoç, J. Klem, N. Chand, 1986 .

Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistors

H. Morkoç, N. Chand, 1985 .

Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs

J. Chyi, H. Morkoç, D. Huang, 1990 .

An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors

H. Morkoc, R.J. Fischer, M. Shur, 1984, IEEE Transactions on Electron Devices.

Suppression of emitter size effect on the current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

J. Chyi, H. Morkoç, S. Mohammad, 1990 .

In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction p-n-p bipolar transistors grown by molecular beam epitaxy

J. Chyi, H. Morkoç, C. Peng, 1988, IEEE Electron Device Letters.

GaAs/AlGaAs heterojunction Pnp bipolar transistors grown on (100) Si by molecular beam epitaxy

H. Morkoç, A. Yariv, C. Litton, 1988 .

New approaches in heteroepitaxy and related devices

H. Morkoç, 1991 .

Electronic and optical devices with gallium arsenide on silicon prepared by MBE

H. Morkoç, 1989 .

Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance

R. Fischer, H. Morkoç, 1986, IEEE Electron Device Letters.

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Hadis Morkoç, R. Fischer, 1984 .

Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy

H. Morkoç, M. Lin, G. Zhou, 1993 .

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

H. Morkoç, D. Cahill, A. Botchkarev, 1996 .

Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors

D. L. Blackburn, Hadis Morkoç, M. S. Unlu, 1991 .

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Molecular beam epitaxial growth of GaAs and other compound semiconductors

J. Chyi, H. Morkoç, S. Strite, 1991 .

Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Epitaxial CdTe films on GaAs/Si and GaAs substrates

H. Morkoç, R. Bean, K. Zanio, 1986 .

Growth of Compound Semiconductors

H. Morkoç, R. Gunshor, 1987 .

Study of heteroepitaxial interfaces by atomic resolution electron microscopy

R. Fischer, H. Morkoç, N. Ōtsuka, 1986 .

Chapter 5 – LATTICE-MISMATCHED HETEROEPITAXY

H. Morkoç, S. Fang, 1995 .

Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−x As grown by molecular‐beam epitaxy

H. Morkoç, D. Huang, T. Tombrello, 1988 .

Heterojunction GaAs/GaAlAs I2L-ring oscillators fabricated by MBE

R. Fischer, H. Morkoç, H. Beneking, 1986, IEEE Transactions on Electron Devices.

Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use of p+‐GaAs‐(Al,Ga)As‐p−‐GaAs capacitors

D. Arnold, H. Morkoç, J. Klem, 1984 .

Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors

H. Morkoç, A. L. Demirel, D. Mui, 1992 .

Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results

H. Morkoç, David J. Smith, K. Tsen, 1991 .

A study of high-speed normally off and normally on Al0.5Ga0.5As heterojunction gate GaAs FET's (HJFET)

H. Morkoç, R. Bell, G. Antypas, 1978, IEEE Transactions on Electron Devices.

GaAs/GaAs1−ySby superlattice light emitting diodes

W. Kopp, R. Fischer, H. Morkoç, 1984 .

Surface recombination in GaAs PN junction diode

Hadis Morkoç, B. Mazhari, H. Morkoç, 1993 .

Electronic surface state (Tamm state) under electric field in semiconductor superlattices

H. Morkoç, F. Y. Huang, 1992 .

Influence of nonuniform doping on the uniformity of current gain, base transit time, and related properties of AlGaAs/GaAs heterojunction bipolar transistors

J. Chyi, H. Morkoç, S. Mohammad, 1995 .

Anisotropy of thermal expansion of GaAs on Si(001)

H. Morkoç, H. Zabel, H. Unlu, 1988 .

Second order Raman spectroscopy of the wurtzite form of GaN

H. Morkoç, A. Salvador, R. Merlin, 1995 .

Charge transport by surface acoustic waves in GaAs

Hadis Morkoç, B. J. Hunsinger, Michael J. Hoskins, 1982 .

Elimination of drain I/V collapse in MODFETs through the use of thin n-GaAs/AlGaAs superlattice

R. Fischer, H. Morkoç, W. Masselink, 1984 .

Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy

W. G. Lyons, T. Drummond, R. Fischer, 1983 .

Model for modulation doped field effect transistor

H. Morkoc, M. Shur, K. Lee, 1982, IEEE Electron Device Letters.

Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

J. Chyi, J. M. Cowley, H. Morkoç, 1989 .

Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

H. Morkoç, M. Lin, S. Strite, 1995 .

GaN based III–V nitrides by molecular beam epitaxy

H. Morkoç, A. Salvador, B. Sverdlov, 1995 .

Si/SiGe modulation‐doped structures with thin buffer layers: Effect of substrate orientation

H. Morkoç, M. Lin, G. Zhou, 1993 .

Terracing in strained-layer superlattices

H. Morkoç, D. Neumann, H. Zabel, 1988 .

GaAs/Ge/GaAs heterostructures by molecular beam epitaxy

H. Morkoç, S. Strite, A. Rockett, 1990 .

Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy

T. Drummond, W. Kopp, R. Fischer, 1982 .

In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

H. Morkoç, T. Won, S. Agarwala, 1988 .

Current–voltage characteristics of n‐AlGaAs/p‐GaAs heterojunction diodes

R. Fischer, H. Morkoç, J. Klem, 1986 .

Intrinsic gate delay of Si/SiGe integrated injection logic circuits

H. Morkoç, B. Mazhari, 1995 .

Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I/sup 2/L circuits

Hadis Morkoç, B. Mazhari, H. Morkoç, 1992 .

Large capacity As2 source for molecular beam epitaxy

W. Kopp, R. Fischer, H. Morkoç, 1984 .

Observation of negative-differential-resistance in strained n-type Si/SiGe MODFETs

H. Morkoç, M. Lin, G. Zhou, 1994 .

Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates

Miles V. Klein, Hadis Morkoç, Romuald Houdré, 1987 .

GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour deposition

H. Morkoç, V. Aebi, J. Andrews, 1979 .

Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2010, Proceedings of the IEEE.

On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

H. Morkoç, A. Salvador, A. Botchkarev, 1997 .

Investigation of Epitaxially Grown PbO, TiO2 and ZrO2 as Bridge Layers for Integration of PZT on GaN by MBE

H. Morkoç, N. Izyumskaya, X. Gu, 2006 .

A TEM study of ZnO layers deposited by MBE and RF magnetron sputtering

H. Morkoç, Y. Moon, P. Ruterana, 2006 .

Zero-phonon line and fine structure of the yellow luminescence band in GaN

H. Morkoç, M. Reshchikov, A. Usikov, 2016 .

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Hadis Morkoç, Roberto Cingolani, Bernard Gil, 1999 .

Time dependence of current at high electric fields in AlxGa1-xAs-GaAs heterojunction layers

T. Drummond, H. Morkoç, K. Hess, 1981 .

Epitaxial lateral overgrowth of non-polar GaN( 1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011 .

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

Liang Dong, Hadis Morkoç, Ümit Özgür, 2013 .

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

J. Chyi, H. Morkoç, H. Drew, 1989 .

Electrical properties of thermally annealed p-GaAs/n-Si heterojunctions and the implications for a GaAs-Si heterojunction bipolar transistor

H. Morkoç, M. Unlu, J. Chen, 1987, 1987 International Electron Devices Meeting.

Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy

H. Morkoç, M. Lin, B. Sverdlov, 1993 .

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Hadis Morkoç, Lin Zhou, Xianfeng Ni, 2010 .

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Energy transfer in ZnO-anthracene hybrid structure

Hadis Morkoç, Arup Neogi, Ryoko Shimada, 2012 .

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Dislocation density reduction in GaN using porous SiN interlayers

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

S. S. Park, Hadis Morkoç, Ümit Özgür, 2005 .

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer

Hadis Morkoç, Natalia Izyumskaya, Vitaliy Avrutin, 2007 .

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Hadis Morkoç, Andrei Botchkarev, B. Sverdlov, 1994 .

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

H. Morkoç, L. Hultman, V. Avrutin, 2013 .

Luminescence of Acceptors in Mg-Doped GaN

H. Morkoç, H. Amano, P. Paskov, 2013 .

Optical and structural studies of homoepitaxially grown m-plane GaN

H. Morkoç, L. Hultman, V. Avrutin, 2012 .

Measurement of linear and cubic spin–orbit coupling parameters in AlGaN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas

H. Morkoç, N. Biyikli, Ü. Özgür, 2008 .

Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on bulk GaN substrates

H. Morkoç, L. Samuelson, P. Paskov, 2011 .

Effect of potential fluctuations on photoluminescence in Mg‐doped GaN

H. Morkoç, Y. Moon, M. Reshchikov, 2005 .

Electric field induced heating and energy relaxation in GaN

H. Morkoç, F. Yun, T. Eckhause, 2003 .

Defects and Doping

H. Morkoç, 1999 .

Resonant surface plasmon-induced modification of photoluminescence from GaN/AlN quantum dots

Hadis Morkoç, Arup Neogi, H. Morkoç, 2004 .

Optical Properties of ZnO and Related Alloys

H. Morkoç, Ü. Özgür, 2006 .

High quantum efficiency of photoluminescence in GaN and ZnO

H. Morkoç, J. Nause, B. Nemeth, 2005 .

Study of leakage defects on GaN films by conductive atomic force microscopy

Hadis Morkoç, J. C. Moore, A. A. Baski, 2007 .

Manifestation of edge dislocations in photoluminescence of GaN

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2005 .

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Hadis Morkoç, A. A. Baski, Jinqiao Xie, 2004 .

Photoluminescence from structural defects in GaN

Jacek B. Jasinski, Hadis Morkoç, M. A. Reshchikov, 2003 .

Manifestation of structural defects in photoluminescence from GaN

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2003 .

Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

H. Morkoç, M. Reshchikov, F. Yun, 2002 .

Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane

H. Morkoç, S. Fang, D. Mui, 1991 .

Request for Critical Components for MBE and MOVCD to Pursue High Purity GaN at Virginia Microelectronics Center (VMC)

Hadis Morkoc, H. Morkoç, 2001 .

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

H. Morkoç, R. Cingolani, S. Doğan, 2003 .

Photoluminescence from freestanding GaN with (1010) orientation

H. Morkoç, D. Hill, M. Reshchikov, 2003 .

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

H. Morkoç, K. M. Jones, R. Cingolani, 2000 .

Excitons bound to structural defects in GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

H. Morkoç, David J. Smith, K. M. Jones, 2001 .

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Hadis Morkoç, Paolo Visconti, Feng Yun, 2001 .

Dislocation reduction in epitaxial GaAs on Si(100)

Hadis Morkoç, Hartmut Zabel, N. Otsuka, 1986 .

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

H. Morkoç, R. Alfano, S. Doğan, 2003 .

Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

Hadis Morkoç, P. Ruterana, H. Morkoç, 2000 .

Band offset measurements of ZnO∕6H-SiC heterostructure system

H. Morkoç, Y. Alivov, Q. Fan, 2006 .

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2005 .

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

H. Morkoç, O. Bierwagen, V. Avrutin, 2015 .

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

H. Morkoç, V. Avrutin, N. Izyumskaya, 2021, physica status solidi (RRL) – Rapid Research Letters.

Electronic Band Structure of Bulk and QW Nitrides

H. Morkoç, 1999 .

Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure

H Morkoc, Y E. Ihm, N Otsuka, 1988, Photonics West - Lasers and Applications in Science and Engineering.

Ordering in GaAs1−xSbx grown by molecular beam epitaxy

H. Morkoç, J. Klem, N. Ōtsuka, 1987 .

GaN resistive hydrogen gas sensors

Hadis Morkoç, S. Chevtchenko, Feng Yun, 2005 .

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

S. S. Park, H. Morkoç, D. Huang, 2003 .

Structural, optical and electrical properties of GaN films grown by metalorganic chemical vapor deposition on sapphire.

H. Morkoç, K. M. Jones, A. Passaseo, 2001 .

Defect investigation of GaN thin films etched by photo-electrochemical and hot wet etching by atomic force and transmission electron microscopy

H. Morkoç, David J. Smith, K. M. Jones, 2001 .

Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

H. Morkoç, K. M. Jones, M. Reshchikov, 2000 .

Optical modes within III-nitride multiple quantum well microdisk cavities

K. C. Zeng, Bei-Wei Zhang, R. A. Mair, 1998 .

III‐Nitride Light‐Emitting Diodes

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures

T. Drummond, H. Morkoç, A. Cho, 1981 .

High mobilities in AlxGa1−xAs‐GaAs heterojuntions

T. Drummond, H. Morkoç, L. Witkowski, 1980 .

Transport in modulation‐doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)

Hadis Morkoç, T. J. Drummond, T. Drummond, 1982 .

On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy

J. Chyi, H. Morkoç, A. Rockett, 1989 .

AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy

H. Morkoc, N. Holonyak, T. J. Drummond, 1982, Photonics West - Lasers and Applications in Science and Engineering.

Reactive Molecular-Beam Epitaxy for Wurtzite GaN

H. Morkoç, A. Salvador, S. Mohammad, 1997 .

Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC and ZnO Substrates

H. Morkoç, J. Solomon, W. Kim, 1997 .

Si/SiGe heterostructures and devices

Hadis Morkoç, H. Morkoç, G. Zhou, 1993 .

Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors

T. Drummond, W. Kopp, R. Fischer, 1982 .

Comparison of Single and Multiple Period Modulation Doped AlxGa1-xAs/GaAs Heterostructures for FETs

T. Drummond, H. Morkoç, M. Keever, 1982 .

Deep centers in n-GaN grown by reactive molecular beam epitaxy

David C. Look, Z-Q. Fang, Hadis Morkoç, 1998 .

Magnetotransport properties of AlxGa1-xN/AlN/ GaN heterostructures grown on epitaxial lateral overgrown GaN templates

H. Morkoç, I. Vurgaftman, N. Biyikli, 2007 .

Thermal conductivity of bulk ZnO after different thermal treatments

Sang-Jun Cho, Fred H. Pollak, Hadis Morkoç, 2006 .

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Processing, Devices, and Heterostructures

H. Morkoç, Ü. Özgür, 2009 .

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

A Platform for Complementary Metal‐Oxide‐Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer

H. Morkoç, A. Kvit, V. Avrutin, 2021, Advanced Photonics Research.

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

V. Avrutin, Ü. Özgür, Daniel Rosales, 2014, Photonics West - Optoelectronic Materials and Devices.

Recombination at surface states in GaN

H. Morkoç, K. M. Jones, R. Molnar, 2001 .

Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells

H. Morkoç, R. Alfano, W. Wang, 2002 .

Low‐threshold (∼600 A/cm2 at room temperature) GaAs/AlGaAs lasers on Si (100)

A. Yariv, H. Morkoç, H. Z. Chen, 1987 .

Recombination dynamics of free and localized excitons in GaN/Ga 0.93 Al 0.07 N quantum wells

Hadis Morkoç, Pierre Lefebvre, Won-Seok Kim, 1998 .

Luminescence from defects in GaN

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2006 .

Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy

H. Morkoç, A. Rockett, J. Klem, 1986 .

Properties of AlxGa1−xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

H. Morkoç, M. Reshchikov, F. Yun, 2002 .

High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors

Hadis Morkoç, M. S. Unlu, G. B. Gao, 1990 .

Design study of AlGaAs/GaAs HBTs

David J. Roulston, H. Morkoc, H. Morkoç, 1990 .

Double-layer collector for heterojunction bipolar transistors

H. Morkoç, Jack Chen, B. Mazhari, 1992 .

Submicron gate GaAs/Al0.3Ga0.7AS MESFET's with extremely sharp interfaces (40 Å)

Shun-Lin Su, T. Drummond, W. Kopp, 1982, IEEE Transactions on Electron Devices.

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

H. Morkoc, A. Crespo, T. Paskova, 2012, IEEE Electron Device Letters.

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Hadis Morkoç, Xiang Li, Ümit Özgür, 2013 .

Observation of discrete donor-acceptor pair spectra in MBE grown GaAs

D. C. Reynolds, H. Morkoç, W. Masselink, 1984 .

Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction

A. Carlo, H. Morkoç, P. Lugli, 2001 .

Optically Transparent Antennas and Filters: A Smart City Concept to Alleviate Infrastructure and Network Capacity Challenges

Hadis Morkoc, Erdem Topsakal, Natalia Izyumskaya, 2019, IEEE Antennas and Propagation Magazine.

Electrical characteristics of InSb-GaAs heterojunctions

J. Chyi, H. Morkoç, D. Mui, 1991 .

The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface

J. Chyi, H. Morkoç, A. Rockett, 1989 .

Structural and Optical Properties of PbTiO3 Grown on SrTiO3 Substrates by Peroxide MBE

H. Morkoç, David J. Smith, T. Kang, 2006 .

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Hadis Morkoç, Feng Yun, A. A. Baski, 2002 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

H. Morkoç, David J. Smith, Lin Zhou, 2007 .

Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells

M. Longo, A. Carlo, H. Morkoç, 2000 .

Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

H. Morkoc, P.M. Solomon, H. Morkoç, 1984, IEEE Transactions on Electron Devices.

III-V Nitrides and Silicon Carbide as Optoelectronic Materials

H. Morkoç, A. Teke, Seydi Dog¢an, 2006 .

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Electrical characteristics of p+‐Ge/(N‐GaAs and N‐AlGaAs) junctions and their applications to Ge base transistors

H. Morkoç, S. Strite, M. Unlu, 1990 .

Characteristics of p-Ge/N-GaAs heterojunctions grown by molecular beam epitaxy

H. Morkoç, S. Strite, M. Unlu, 1989 .

Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

H. Morkoc, Kwyro Lee, W.F. Kopp, 1983, IEEE Transactions on Electron Devices.

Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well

S. Luryi, H. Morkoç, T. Henderson, 1986 .

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary.

H. Morkoç, P. Ruterana, Jun Chen, 2018, ACS applied materials & interfaces.

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Hadis Morkoç, Ümit Özgür, Milos Nesladek, 2012 .

Characteristics of free-standing hydride-vapor- phase-epitaxy-grown GaN with very low defect concentration

Hadis Morkoç, Roberto Cingolani, Paolo Visconti, 2000 .

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Hadis Morkoç, Arvydas Matulionis, J. Liberis, 2010, OPTO.

Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Hadis Morkoç, Arvydas Matulionis, H. Morkoç, 2009, OPTO.

Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

T. Drummond, H. Morkoç, W. Masselink, 1986, Proceedings of the IEEE.

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Growth and transport properties of InAs epilayers on GaAs

J. Chyi, H. Morkoç, R. Bean, 1988 .

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Band structure and confined energy levels of the Si3N4/Si/GaAs system

H. Morkoç, Yia-Chung Chang, Dae-gyu Park, 1997 .

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

H. Morkoç, G. Gao, J. Reed, 1994 .

Si3N4/Si/n‐GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range

H. Morkoç, M. Lin, N. Teraguchi, 1993 .

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

Band bending near the surface in GaN as detected by a charge sensitive probe

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

H. Morkoç, M. Reshchikov, Daming Huang, 2002 .

Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by insitu chemical vapor deposition

H. Morkoç, G. Gao, J. Reed, 1994 .

Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth

H. Morkoç, S. Strite, A. Agarwal, 1992 .

Influence of AlxGa1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors

T. Drummond, W. Kopp, R. Fischer, 1982 .

Transient photoluminescence of defect transitions in freestanding GaN

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2001 .

Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5 on InP

H. Morkoç, J. Klem, N. Ōtsuka, 1987 .

4π CONFOCAL MICROSCOPE FOR MUTLIPHOTON OPTICAL SECTIONING OF GaN FILM LUMINESCENCE

R. T. Williams, K. Ucer, H. Morkoç, 2001 .

Nanostructuring induced enhancement of radiation hardness in GaN epilayers

Ion Tiginyanu, Hadis Morkoç, V. V. Ursaki, 2007 .

p‐type zinc‐blende GaN on GaAs substrates

H. Morkoç, M. Lin, G. Zhou, 1993 .

ELECTRICAL PROPERTIES OF GAAS/GAN/GAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES

Hadis Morkoç, J. Thornton, H. Morkoç, 1991 .

Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S

W. Kopp, H. Morkoç, M. B. Das, 1984, IEEE Electron Device Letters.

Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As–GaAs Modulation Doped Layers

M. Shur, T. Drummond, H. Morkoç, 1984 .

Charge control model of inverted GaAs-AlGaAs modulation doped FET's (IMODFET's)

M. Shur, T. Drummond, H. Morkoç, 1984 .

Electrical measurements on n+‐GaAs‐undoped Ga0.6Al0.4 As‐n‐GaAs capacitors

R. Fischer, H. Morkoç, P. Solomon, 1983 .

DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (Al,Ga)As/GaAs FETS.

W. G. Lyons, M. Shur, T. Drummond, 1983 .

Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors

H. Morkoc, Kwyro Lee, M. Shur, 1983, IEEE Transactions on Electron Devices.

Current transport in modulation doped (Al,Ga)As/GaAs heterostructures: Applications to high speed FET's

H. Morkoc, H. Morkoç, 1981, IEEE Electron Device Letters.

Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization

H. Morkoc, Kwyro Lee, M. Shur, 1984, IEEE Transactions on Electron Devices.

Characterization of Flicker Noise in GaN Based Modfets at Low Drain Bias

H. Morkoç, W. Fong, K. Tong, 1999 .

Infrared ellipsometric study on PZT thin films

P. G. Snyder, H. Morkoç, T. Kang, 2006 .

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

H. Morkoc, R. Fischer, D. Perrachione, 1984, IEEE Transactions on Electron Devices.

Investigation of Al/(Al,Ga)As/GaAs metal/insulator/ semiconductor-type structures and application to buried interface field effect transistors

T. Drummond, D. Arnold, R. Fischer, 1985 .

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

Hadis Morkoç, Amnon Yariv, S. Sanders, 1989 .

High frequency performance of SiC heterojunction bipolar transistors

H. Morkoç, G. Gao, J. Sterner, 1994 .

Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As using n+‐InGaAs/InAlAs/n−‐InGaAs capacitors

H. Morkoç, P. Solomon, A. Ketterson, 1986 .

Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy

D. C. Reynolds, R. Fischer, H. Morkoç, 1985 .

Electric field induced decrease of photoluminescence lifetime in GaAs quantum wells

E. Mendez, H. Morkoç, J. Kash, 1985 .

Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy

H. Morkoç, A. Salvador, J. Myoung, 1995 .

POLARIZATION EFFECTS IN NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

H. Morkoç, P. Lugli, R. Cingolani, 2000 .

Modulation Doped FETs

H. Morkoç, 1999 .

GaN‐Based Modulation‐Doped FETs and Heterojunction Bipolar Transistors

H. Morkoç, Lianghong Liu, 2003 .

GaN based quantum dot heterostructures

H. Morkoç, M. Nathan, J. Cui, 2000 .

Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates

H. Morkoç, S. Saddow, J. Wolan, 2000 .

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

H. Morkoç, Ü. Özgür, J. Leach, 2010 .

Properties of MODFET's grown on Si substrates at DC and microwave frequencies

H. Morkoc, W.F. Kopp, R.J. Fischer, 1986, IEEE Transactions on Electron Devices.

A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

H. Morkoc, W.F. Kopp, R.J. Fischer, 1986, IEEE Transactions on Electron Devices.

Reduced light sensitivity and persistent photoconductivity in novel modulation doped heterostructures incorporating an n·GaAs/AlGaAs superlatt1ce as the high bandgap material

H. Morkoç, W. Masselink, J. Klem, 1985 .

Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2

R. Fischer, H. Morkoç, L. Erickson, 1983 .

Light sensitivity of Al0.25Ga0.75As/GaAs modulation-doped structures grown by molecular beam epitaxy: effect of substrate temperature

T. Drummond, D. Arnold, R. Fischer, 1983 .

Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN∕AlN∕GaN heterostructures

H. Morkoç, N. Biyikli, X. Ni, 2006, cond-mat/0608274.

Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1981 .

Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates

H. Morkoc, R. Fischer, R. Fischer, 1986, IEEE Electron Device Letters.

Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy

Hadis Morkoç, A. Y. Cho, H. Morkoç, 1980 .

Electrical defects in AlGaN and InAlN

Hadis Morkoç, J. Xie, Jacob H. Leach, 2009, OPTO.

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

H. Morkoç, David J. Smith, D. Look, 1998 .

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

C. K. Inoki, H. Morkoç, S. Doğan, 2005 .

Thermal stability of Si3N4/Si/GaAs interfaces

H. Morkoç, A. Rockett, S. Alterovitz, 1997 .

Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealing

H. Morkoç, David J. Smith, S. Alterovitz, 1998 .

Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

H. Morkoç, A. Rockett, Dae-gyu Park, 1998 .

Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structures

H. Morkoç, S. Strite, A. L. Demirel, 1993 .

Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density

H. Morkoç, S. Strite, A. L. Demirel, 1992 .

Analysis of camel gate FET's (CAMFET's)

H. Morkoc, W.F. Kopp, W.G. Lyons, 1983, IEEE Transactions on Electron Devices.

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1995 .

Doping of ZnO

H. Morkoç, Ü. Özgür, 2009 .

Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes

H. Morkoç, S. Doğan, S. Tüzemen, 2009 .

dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation‐doped field‐effect transistor

W. Kopp, H. Morkoç, J. Klem, 1986 .

Microwave performance of GaAs MESFET's with AlGaAs buffer layers—Effect of heterointerfaces

W. Kopp, D. Arnold, R. Fischer, 1984, IEEE Electron Device Letters.

Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds

H. Morkoç, A. Cho, M. Afsar, 1981 .

Quantum 1/f noise in GaN FETs, HFETs, MODFETs, and their oscillators' phase noise

Peter H. Handel, Hadis Morkoç, Amanda M. Hall, 2007, SPIE OPTO.

High-resolution imaging of 1: 1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N

H. Morkoç, David J. Smith, Lin Zhou, 2009 .

A GaN-based two-sensor array for methane detection in an ethanol environment

Ion Tiginyanu, Hadis Morkoç, V. V. Ursaki, 2006 .

Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

H. Morkoç, S. Strite, K. Adomi, 1990 .

Weak antilocalization and zero-field electron spin splitting in Al x Ga 1 − x N ∕ AlN ∕ GaN heterostructures with a polarization-induced two-dimensional electron gas

H. Morkoç, N. Biyikli, Ç. Kurdak, 2006, cond-mat/0608254.

Preparation and properties of ZnO and devices

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

H. Morkoç, D. Demchenko, V. Avrutin, 2014 .

Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007 .

Atomic structure of the m-plane AlN/SiC interface

W. J. Choyke, H. Morkoç, David J. Smith, 2009 .

Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectance

H. Morkoç, J. Schulman, T. Henderson, 1987 .

Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlattices

H. Morkoç, M. Klein, J. Klem, 1988 .

Electron heating in a multiple-quantum-well structure below 1 K.

Gould, Klem, H. Morkoç, 1986, Physical review. B, Condensed matter.

Site group analysis of normal modes in semiconductor superlattices

B. H. Bairamov, H. Morkoç, M. Klein, 1991 .

A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma‐assisted molecular‐beam epitaxy

H. Morkoç, M. Lin, G. Zhou, 1993 .

Self-assembled modified deoxyguanosines conjugated to GaN quantum dots for biophotonic applications

Jianyou Li, Hadis Morkoç, Arup Neogi, 2004 .

Intrinsic Polarization of Self-Assembled Guanosine Supramolecules in GaN-Based Metal–Semiconductor–Metal Nano-Structures

H. Morkoç, A. Neogi, Jianyou Li, 2009, Journal of Display Technology.

Self-Assembled Guanosine-Based Nanoscale Molecular Photonic Devices

Jianyou Li, Hadis Morkoç, Arup Neogi, 2010 .

Self-assembled oligonucleotide semiconductor conjugated to GaN nanostructures for biophotonic applications

H. Morkoç, B. Gorman, A. Neogi, 2004 .

Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

Klein, Fischer, Merlin, 1985, Physical review. B, Condensed matter.

Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

H. Morkoç, David J. Smith, R. Cingolani, 2002 .

Principles and technology of MODFETs

Hadis Morkoç, Hilmi Ünlü, G. Ji, 1991 .

Design requirements for high-sensitivity UV solar blind imaging detectors based on AlGaN/GaN photodetector arrays: a review

Hadis Morkoc, Cole W. Litton, P. J. Schreiber, 2001, SPIE Optics + Photonics.

Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

H. Morkoç, A. Yankovich, A. Kvit, 2012 .

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012, OPTO.

Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers

H. Morkoç, Y. Moon, Ü. Özgür, 2005 .

Base transit time of GaN/InGaN heterojunction bipolar transistors

H. Morkoç, S. Mohammad, 1995 .

The p-n Junction

H. Morkoç, 1999 .

Surface spatial profiles of defects in GaN

H. Morkoc, J. Xie, Y. Fu, 2006, SPIE OPTO.

A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

H. Morkoç, N. Biyikli, Y. Moon, 2006 .

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Properties of a Si doped GaN/AlGaN single quantum well

H. Morkoç, A. Salvador, O. Aktas, 1995 .

Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

Hadis Morkoç, David K. Ferry, Kong-Thon Tsen, 1998 .

Ballistic transport in InGaN-based LEDs: impact on efficiency

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011 .

Front Matter: Volume 7602

J. Chyi, H. Morkoç, J. Piprek, 2010 .

Direct determination of Al content in molecular‐beam epitaxially grown AlxGa1−xAs (0≤x≤1) by nuclear resonant reaction analysis and x‐ray rocking curve techniques

H. Z. Chen, H. Morkoç, A. Yariv, 1988 .

Growth and Growth Methods for Nitride Semiconductors

H. Morkoç, 2009 .

Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices

H. Morkoç, Dae-gyu Park, S. Mohammad, 1997 .

Room Temperature Ferromagnetic Properties of Epitaxially Grown Zn 1-x Co x O Thin Films

H. Morkoç, J. Nause, V. Rengarajan, 2004 .

Gate-voltage-dependent transport measurements on heterostructure field-effect transistors

H. Morkoç, K. Heime, W. Prost, 1986, IEEE Transactions on Electron Devices.

Evolution of surface morphology of GaN thin films during photoelectrochemical etching

H. Morkoç, Ü. Özgür, J. Leach, 2007 .

Photoelectrochemical Etching of GaN Thin Films With Varying Carrier Concentrations

H. Morkoç, Ü. Özgür, J. Leach, 2007 .

Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas

Kai Ding, Hadis Morkoç, Natalia Izyumskaya, 2019, OPTO.

Studies of III-Nitride Superlattice Structures Implanted with Lanthanide Ions

H. Morkoç, M. Kordesch, A. Anders, 2008 .

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2012 .

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

H. Morkoç, B. Ganguly, S. Doğan, 2004 .

Analytical investigation of surface potential and related properties of metal/insulator/III–V semiconductor capacitors

H. Morkoç, S. Mohammad, F. Stengel, 1996 .

Analytical investigation of electrical performance of metal-insulator-III–V semiconductor field-effect transistors

H. Morkoç, S. Mohammad, F. Stengel, 1996 .

Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability

H. Morkoç, A. Salvador, O. Aktas, 1995 .

GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

John Reed, Hadis Morkoç, H. Morkoç, 1992 .

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

H. Morkoç, S. Strite, M. Nathan, 1991 .

Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

H. Morkoç, N. Teraguchi, Zhifang Wang, 1993 .

Quantum tunneling of electrons through superlattices in metal-semiconductor ohmic contacts

H. Morkoç, F. Y. Huang, T. Shen, 1993 .

Microwave InxGa1?xAsyP1?y/InP f.e.t

H. Morkoç, G. Antypas, Y. Houng, 1978 .

Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature.

A Yariv, H. Z. Chen, H. Morkoç, 1987, Optics letters.

Reduction of backgating in GaAs/AlGaAs MESFETs by optimisation of active-layer/buffer-layer interface

D. Arnold, R. Fischer, H. Morkoç, 1984 .

Backgating in GaAs/(Al,Ga)As modulation‐doped field‐effect transistors and its reduction with a superlattice

D. Arnold, H. Morkoç, L. Erickson, 1984 .

Rapid Delineation of Extended Defects in GaN and a Novel Method for Their Reduction

H. Morkoç, R. Cingolani, J. Jasinski, 2002 .

Reduced backgating effect in modulation‐doped field‐effect transistors by p‐n junction isolation

M. Patil, H. Morkoç, D. Mui, 1988 .

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

W. G. Lyons, H. Morkoç, R. Thorne, 1982 .

Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET

Qian Fan, Hadis Morkoç, Jacob H. Leach, 2010, Proceedings of the IEEE.

Reduction of dark current in photodiodes by the use of a resonant cavity

Hadis Morkoç, Andrei Botchkarev, N. Teraguchi, 1993 .

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

H. Morkoç, J. Leach, M. Ramonas, 2009 .

Large electro-optic effect in single-crystal Pb(Zr,Ti)O3 (001) measured by spectroscopic ellipsometry

H. Morkoç, David J. Smith, T. Kang, 2008 .

Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates

V. Avrutin, S. Metzner, H. Morkoc, 2018, OPTO.

Characteristics of GaAs/AlGaAs MODFETs grown directly on

H. Morkoc, R. Fischer, W. Kopp, 1984, 1984 International Electron Devices Meeting.

Carrier dynamics under two‐ and single‐photon excitation in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Hadis Morkoç, Ümit Özgür, Kęstutis Jarašiūnas, 2012 .

Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs

D. C. Reynolds, H. Morkoç, J. Klem, 1986 .

Optical reflectance in GaAs/AlGaAs quantum wells

D. C. Reynolds, H. Morkoç, J. Klem, 1986 .

ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Hadis Morkoç, Ryoko Shimada, Vitaliy Avrutin, 2008, SPIE OPTO.

Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices.

Peng, Chang, Sanders, 1985, Physical review. B, Condensed matter.

Manganese behaviour in ZnO layers deposited by magnetron sputtering for spintronic application

H. Morkoç, P. Ruterana, C. Liu, 2008 .

Comparative analysis of the high-frequency performance of Si/Si1−xGex heterojunction bipolar and Si bipolar transistors

H. Morkoç, G. Gao, Ji Chen, 1992 .

Analytical model for I-V characteristics of JFETs with heavily doped channels

Mahesh B. Patil, Hadis Morkoç, Ji Chen, 1990 .

Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel

Mahesh B. Patil, Hadis Morkoç, G. B. Gao, 1990 .

High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Hadis Morkoç, Michael J. Estes, Tuoc Dang, 1997 .

n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

Qian Fan, Hadis Morkoç, Ya. I. Alivov, 2010, Microelectronics Reliability.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011, OPTO.

Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2006 .

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

H. Morkoç, V. Avrutin, Ü. Özgür, 2023, OPTO.

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Electrical and Optical Properties of Semi-insulating GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1997 .

Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method

W. Kopp, H. Morkoç, W. Masselink, 1985, IEEE Electron Device Letters.

High Resolution Electron Microscopy Studies of MBE Grown InSb Layers on GaAs (100)

J. Chyi, H. Morkoç, A. Rockett, 1989 .

Atypical grain boundaries in ZnO layers deposited on sapphire by rf magnetron sputtering on (0001) sapphire

H. Morkoç, P. Ruterana, C. Liu, 2007 .

High resolution and analytical electron microscopy of ZnO layers doped with magnetic ions for spintronic applications

H. Morkoç, P. Ruterana, C. Liu, 2006 .

Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

H. Morkoç, 2009 .

GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors

H. Morkoç, A. Salvador, W. Yang, 1997, 1997 55th Annual Device Research Conference Digest.

Polarization effects in nitride semiconductors and device structures

H. Morkoç, R. Cingolani, B. Gil, 1999 .

Gan-Based Modulation-Doped Field-Effect Transistors and Ultraviolet Detectors

H. Morkoç, 2000 .

III-V Nitrides For Optical Emitters

H. Morkoç, 1994, Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.

Photoluminescence of zinc‐blende GaN under hydrostatic pressure

H. Morkoç, M. Lin, S. Strite, 1994 .

Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties

H. Morkoç, Y. Moon, Xing fa Gu, 2007 .

Forward-current electroluminescence from GaN/ZnO double heterostructure diode

H. Morkoç, Y. Moon, V. Avrutin, 2005 .

Contactless electroreflectance, in the range of 20 K

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2003 .

Wurtzite GaN-based heterostructures by molecular beam epitaxy

H. Morkoç, 1998 .

Characterization of Group III-nitrides by high-resolution electron microscopy

H. Morkoç, M. Lin, S. Strite, 1994 .

Modulation Doped A1xGa1-xAs/GaAs Field Effect Transistors (MODFETS): Analysis, Fabrication and Performance

H. Morkoç, 1985 .

High velocity N-on and N-off modulation doped GaAs/AlxGal-xAs FETs

M. Shur, T. Drummond, W. Kopp, 1982, 1982 International Electron Devices Meeting.

Light‐Emitting Diodes

H. Morkoç, 1999 .

Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0

J. Chyi, H. Morkoç, J. Klem, 1988 .

Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy

D. C. Reynolds, H. Morkoç, Jasprit Singh, 1985 .

High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface

Hadis Morkoç, W. T. Masselink, R. Fischer, 1984 .

Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

H. Morkoc, W.F. Kopp, R. Fischer, 1984, IEEE Transactions on Electron Devices.

Influence of arsenic species and growth temperature on the properties of GaAs/(Al,Ga)As superlattices grown by molecular beam epitaxy

R. Fischer, H. Morkoç, W. Masselink, 1984 .

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1−xAs field‐effect transistors

W. G. Lyons, T. Drummond, W. Kopp, 1982 .

Automatic shutter controller for molecular beam epitaxy

T. Drummond, H. Morkoç, L. Witkowski, 1981 .

Photoluminescence of Zn-doped GaN grown by HVPE

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

Growth of Bulk GaN and AlN: Progress and Challenges

Yusuke Mori, Hadis Morkoç, Vitaliy Avrutin, 2010, Proceedings of the IEEE.

One- and two-photon absorption spectroscopy of GaN/AlGaN quantum wells

H. Morkoç, A. Salvador, R. Cingolani, 1998 .

Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2011, OPTO.

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

Hadis Morkoç, R. Fischer, Paul D. Coleman, 1985 .

Stable and unstable current‐voltage measurements of a resonant tunneling heterostructure oscillator

W. Kopp, H. Morkoç, J. Gering, 1985 .

Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy

Hadis Morkoç, B. Sverdlov, H. Morkoç, 1993 .

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

H. Morkoç, Dae-gyu Park, J. Reed, 1997 .

Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by in situ anneal of the as‐deposited Si

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

GaInAs/GaAs multiple quantum well reflection modulators

H. Morkoç, D. Huang, W. Dobbelaere, 1988 .

GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device

Hadis Morkoç, M. S. Unlu, S. Kalem, 1988 .

The superlattice barrier capacitor: A structure for the investigation of heterojunction interfaces

T. Drummond, W. Kopp, R. Fischer, 1984, IEEE Electron Device Letters.

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force microscopy

Hadis Morkoç, M. A. Reshchikov, S. Chevtchenko, 2005 .

New factors affecting HFET stability, 1/f noise, and reliability

Peter H. Handel, Hadis Morkoç, H. Morkoç, 2011, OPTO.

Wavelength Selective Optical Logic

H. Morkoç, M. Ünlü, 1992 .

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Hadis Morkoç, Theodore J. Schmidt, O. Aktas, 1996 .

Characteristics of Exciton-polaritons in Zno- Based Hybrid Microcavities

H. Morkoç, P. Lagoudakis, F. Laussy, 2022 .