J. Sachitano

(Invited) An Advanced MOS-IC Process Technology Using Oxidation of Oxygen-Doped Polycrystalline Silicon Films

Shuichi Sato, T. Yamaguchi, D. Ritchie, 1978 .

High-speed polysilicon emitter—base bipolar transistor

G. Eiden, H.K. Park, T. Yamaguchi, 1986, IEEE Electron Device Letters.

MO/Ti bilayer metallization for a self‐aligned TiSi2 process

J. Sachitano, E. Lane, G. Eiden, 1984 .

High-Speed Self-Aligned Polysilicon Emitter/Base Bipolar Devices Using Boron and Arsenic Diffusion Through Polysilicon

Hee K. Park, T. Yamaguchi, J. Sachitano, 1986 .

Effects of ion implantation doping on the formation of TiSi2

J. Sachitano, H. K. Park, M. McPherson, 1984 .

Experimental study of nonlinear current‐voltage behavior in undoped polycrystalline silicon

Feng Qian, J. Sachitano, H. K. Park, 1986 .

An advanced MOS-IC process technology using local oxidation ot oxygen-doped polysilicon films

S. Sato, T. Yamaguchi, K.L. Seaward, 1978, IEEE Journal of Solid-State Circuits.