C. Barnes

发表

Irradiation and photobleaching of optical fibers at low temperatures

C. Barnes, 1983 .

Total dose effects on Microelectromechanical Systems (MEMS): accelerometers

William C. Tang, C. I. Lee, C. Barnes, 1996 .

Proton damage effects on light emitting diodes

B. H. Rose, C. Barnes, 1982 .

Characterization of ion‐implantation doping of strained‐layer superlattices. II. Optical and electrical properties

I. J. Fritz, R. M. Biefeld, C. Barnes, 1986 .

Chemical Nature of Shellac

C. Barnes, 1938 .

A roadmap for NASA's radiation effects research in emerging microelectronics and photonics

R.A. Reed, K.A. LaBel, C.E. Barnes, 2000, 2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484).

THERMAL-NEUTRON-INDUCED DEFECTS IN CADMIUM TELLURIDE AND CADMIUM SULFIDE.

C. Barnes, C. Kikuchi, 1967 .

The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

C. Barnes, T. Zietlow, K. Nakamura, 1988 .

A comparison of gamma-irradiation-induced degradation in amphoterically Si-doped GaAs LED's and Zn-diffused GaAs LED's

C. Barnes, C.E. Barnes, 1979, IEEE Transactions on Electron Devices.

Forward bias induced annealing of the E center in silicon

C. Barnes, G. Samara, 1986 .

Zinc‐implantation‐disordered (InGa)As/GaAs strained‐layer superlattice diodes

I. J. Fritz, G. W. Arnold, R. M. Biefeld, 1986 .

Broad-Band Isolators and Variable Attenuators for Millimeter Wavelengths

C. Barnes, 1961 .

A comparison of gamma-induced degradation and forward bias-induced degradation in GaP:Zn,0 LEDs

C. Barnes, 1978 .

Further Developments in Dielectric Waveguide Devices for Millimeter Wavelengths

C. Barnes, 1962 .

Effective screen for fast aging InGaAsP BH lasers using electrical derivatives

C. Barnes, M. Choy, 1985 .

Role of Oxygen in Vinyl Polymerization. II. Isolation and Structure of the Peroxides of Vinyl Compounds

C. Barnes, Giffin D. Jones, R. Elofson, 1950 .

Photoluminescence in high‐resistivity CdTe : In

C. E. Barnes, C. Barnes, K. Zanio, 1975 .

THERMAL-NEUTRON-INDUCED-DEFECTS IN n-TYPE CADMIUM TELLURIDE.

C. Barnes, C. Kikuchi, 1968 .

Mechanism of Vinyl Polymerization. I. Role of Oxygen1

C. Barnes, 1945 .

Cathodoluminescence studies of the 1.4 eV bands in CdTe

C. Barnes, C. B. Norris, 1977 .

Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

C. Barnes, C. B. Norris, 1980 .

Thermal and Injection Annealing of Neutron-Irradiated p-Type Silicon between 76°K and 300°K

C. E. Barnes, C. Barnes, 1969 .

Depth‐resolved cathodoluminescence in undamaged and ion‐implanted GaAs, ZnS, and CdS

C. Barnes, W. Beezhold, C. B. Norris, 1973 .

The effect of thermal neutron-induced damage on photoluminescence in CdTe

C. Barnes, C. Kikuchi, 1975 .

Increased radiation hardness of GaAs laser diodes at high current densities

C. E. Barnes, C. Barnes, 1974 .

Neutron Damage in GaAs Laser Diodes: At and above Laser Threshold

C. E. Barnes, C. Barnes, 1972 .

Photoluminescence, Optical Absorption, and Cathodoluminescence in Ion Implanted CdS

C. Barnes, H. Stein, W. Beezhold, 1973 .

Application of Damage Constants in Gamma Irradiated Anphoterically Si Doped GaAs LEDs

C. E. Barnes, C. Barnes, K. J. Soda, 1976, IEEE Transactions on Nuclear Science.

Pressure dependence of the electron capture cross section of the B hole trap in liquid phase epitaxial gallium arsenide

C. Barnes, G. Samara, 1983 .

The Effect of Hydrostatic Pressure on Defect Annealing in Semiconductors

C. Barnes, G. Samara, 1985 .

Effect of hydrostatic pressure on trapping centers in strained-layer superlattice structures

R. M. Biefeld, C. Barnes, T. E. Zipperian, 1985 .

Proton degradation of light-emitting diodes

Allan H. Johnston, C. E. Barnes, B. G. Rax, 1999 .

Gamma-induced trapping levels in si with and without gold doping

C. Barnes, 1979 .

ABSORPTION MEASUREMENTS IN NEUTRON-IRRADIATED SILICON.

C. Barnes, 1971 .

Neutron-induced trapping levels in aluminum gallium arsenide

L. R. Dawson, C. E. Barnes, Thomas E. Zipperian, 1985 .

Transient Effects of Ionizing Radiation in Photodiodes

L. R. Dawson, C. E. Barnes, J. J. Wiczer, 1981, IEEE Transactions on Nuclear Science.

Radiation effects in 1.06‐μm InGaAs LED’s and Si photodiodes

C. E. Barnes, C. Barnes, 1979 .

Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes

L. R. Dawson, C. E. Barnes, J. J. Wiczer, 1982, IEEE Transactions on Nuclear Science.

A Compact Broad-Band Thin-Film Lumped-Element L-Band Circulator

F. Bosch, C. E. Barnes, R. H. Knerr, 1970 .

Evaluation of implantation-disordering of (InGa)As/GaAs strained-layer superlattices

I. J. Fritz, G. W. Arnold, R. M. Biefeld, 1984 .

Integrated Circulator Design for Parametric Amplifier Application

C. E. Barnes, C. Barnes, 1964 .

The Compact Turnstile Circulator

C. Barnes, B. Owen, 1970 .

The effect of gamma irradiation and forward bias on the 76 K electroluminescence spectrum of GaP:Zn,O

C. Barnes, 1979 .

Neutron Damage in Epitaxial GaAs Laser Diodes

C. Barnes, 1971 .

JFET/SOS devices. II. Gamma-radiation-induced effects

C. Barnes, L. Halle, T. Zietlow, 1988 .

Neutron Damage in GaP Light‐Emitting Diodes

C. Barnes, 1972 .

Radiation Effects in Electroluminescent Diodes

C. E. Barnes, C. Barnes, 1971 .

Comparison of trapping levels in GaAsP strained‐layer superlattice structures and in their buffer layers

R. M. Biefeld, C. Barnes, T. E. Zipperian, 1984 .

Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

G. L. Hash, C. Barnes, K. Choquette, 1999 .

Tunneling in SiC electroluminescent diodes

C. Barnes, 1974 .

Thermal neutron-induced recoil defects in P-type cadmium telluride

C. Barnes, C. Kikuchi, 1970 .

Neutron damage in GaP : Zn,O light‐emitting diodes

C. Barnes, 1977 .

Neutron Irradiation Effects on Diffused GaAs Laser Diodes

C. Barnes, H. D. Southward, B. Noel, 1971 .

AD-A 193 001 JFET / SOS Devices : Gamma-Radiation-Induced Effects

C. Barnes, Hallé, C., 2022 .

Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures

L. R. Dawson, C. E. Barnes, J. J. Wiczer, 1982, Optics & Photonics.

Photonics Radiation Effects Research Analysis.

Roger A. Greenwell, Charles E. Barnes, Larry S. Sadler, 1996 .

A novel p+nn+ GaAs/Al0.30Ga0.70As/GaAs double heterojunction diode for high‐temperature electronic applications

C. Barnes, T. E. Zipperian, L. Dawson, 1982 .

Polarization dependent effects of radiation on wavelength division multiplexers

Charles E. Barnes, Serge Dubovitsky, Leonard I. Dorsky, 1994, Optics & Photonics.

Radiation effects on fused biconical taper wavelength division multiplexers

R. C. Gutierrez, C. E. Barnes, G. M. Swift, 1994 .

Measurements and results of gamma-radiation-induced attenuation at 980-nm of single-mode fiber

Judith D. McFadden, Roger A. Greenwell, Joel M. Hatch, 1996, Optics & Photonics.