S. Decoutere

发表

Dependence of finFET RF performance on fin width

J.-P. Raskin, A. Mercha, S. Decoutere, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 0.35 /spl mu/m SiGe BiCMOS process featuring a 80 GHz f/sub max/ HBT and integrated high-Q RF passive components

E. Rosseel, S. Decoutere, F. Vleugels, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

Line edge roughness: characterization, modeling and impact on device behavior

W. Sansen, S. Decoutere, J. Croon, 2002, Digest. International Electron Devices Meeting,.

Transient enhanced diffusion of Boron in Si

S. Decoutere, R. Lindsay, P. Stolk, 2002 .

TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

A. Sibaja-Hernandez, S. Decoutere, H. Maes, 2005 .

Investigation of PECVD dielectrics for nondispersive metal-insulator-metal capacitors

S. Decoutere, S. Jenei, S. Van Huylenbroeck, 2002, IEEE Electron Device Letters.

Development, Optimization and Evaluation of a CF4 Pretreatment Process to Remove Unwanted Interfacial Layers in Stacks of CVD and PECVD Polycrystalline Silicon-Germanium for MEMS Applications

S. Decoutere, S. Severi, E. Kunnen, 2010 .

Influence of the novel anchor design on the shear strength of poly-sige thin film wafer level packages

S. Decoutere, J. Celis, S. Severi, 2010, 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS).

Above-IC generic poly-SiGe thin film wafer level packaging and MEM device technology: Application to accelerometers

S. Decoutere, I. De Wolf, J. de Coster, 2011, 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems.

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

S. Decoutere, J. Driesen, G. Borghs, 2011, IEEE Electron Device Letters.

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Applied Physics Express.

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2017, IEEE Transactions on Electron Devices.

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

S. Decoutere, M. Meneghini, G. Meneghesso, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

S. Decoutere, N. Ronchi, Tian-Li Wu, 2017, IEEE Electron Device Letters.

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2016, IEEE Electron Device Letters.

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

S. Decoutere, A. Tallarico, C. Fiegna, 2019, IEEE Transactions on Electron Devices.

New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

S. Decoutere, S. Bahl, M. Van Hove, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2014, IEEE Electron Device Letters.

A comparison of extraction techniques for threshold voltage mismatch

W. Sansen, S. Decoutere, J. Croon, 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

Impact of line width roughness on the matching performances of next-generation devices

A. Mercha, S. Decoutere, G. Lorusso, 2008 .

Reliability of p-GaN Gate HEMTs in Reverse Conduction

S. Decoutere, G. Groeseneken, K. Jacobs, 2021, IEEE Transactions on Electron Devices.

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

S. Decoutere, M. Meneghini, G. Meneghesso, 2021, Materials.

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

G. Meneghesso, S. Decoutere, M. Van Hove, 2010, 2010 International Electron Devices Meeting.

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

S. Decoutere, J. Marek, M. Borga, 2020, 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).

Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices

S. Decoutere, M. Baelmans, I. De Wolf, 2018, IEEE Transactions on Components, Packaging and Manufacturing Technology.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

Stiction-free poly-SiGe resonators for monolithic integration of biosensors with CMOS

S. Decoutere, J. de Coster, L. Haspeslagh, 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.

Impact of Interstitial Carbon on Base Current Ideality in SiGe:C Heterojunction Bipolar Transistors

P. R. Verma, S. Decoutere, R. Loo, 2006, 2006 International Symposium on VLSI Design, Automation and Test.

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies

Dimitri Linten, Jonathan Borremans, Steven Thijs, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET

M. Jurczak, B. Parvais, A. Mercha, 2006, 2006 European Solid-State Device Research Conference.

HBM ESD robustness of GaN-on-Si Schottky diodes

D. Linten, S. Decoutere, G. Groeseneken, 2011, EOS/ESD Symposium Proceedings.

24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors

P. Soussan, S. Decoutere, W. De Raedt, 2005, Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005..

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

MOSFET bias dependent series resistance extraction from RF measurements

Stefaan Decoutere, Roberto S. Murphy-Arteaga, Reydezel Torres-Torres, 2003 .

Suitability of FinFET technology for low-power mixed-signal applications

P. Wambacq, B. Parvais, R. Rooyackers, 2006, 2006 IEEE International Conference on IC Design and Technology.

Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

A. Mercha, S. Decoutere, N. Collaert, 2009, IEEE Electron Device Letters.

Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables

A. Caddemi, B. Parvais, A. Mercha, 2007, IEEE Microwave and Wireless Components Letters.

Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling

S. Decoutere, E. Augendre, R. Torres-Torres, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process

G.A.M. Hurkx, S. Decoutere, T. Vanhoucke, 2007, 2007 IEEE International Electron Devices Meeting.

Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics

S. Decoutere, R. Venegas, R. Torres‐Torres, 2010 .

On the Basic Correlation between Polysilicon Resistor Linearity, Matching and 1/f Noise

S. Decoutere, S. Van Huylenbroeck, M. Da Rold, 1999, 29th European Solid-State Device Research Conference.

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2018, IEEE Transactions on Electron Devices.

Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield

R. Rooyackers, W. Sansen, S. Decoutere, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2018, IEEE Transactions on Electron Devices.

Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

S. Decoutere, A. Tallarico, N. Posthuma, 2021, IEEE Transactions on Device and Materials Reliability.

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, IEEE Transactions on Electron Devices.

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Electron Device Letters.

Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

S. Decoutere, D. Wellekens, M. Meneghini, 2018, MRS Communications.

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

S. Decoutere, I. De Wolf, R. Mertens, 2011, 2011 International Electron Devices Meeting.

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

S. Decoutere, G. Groeseneken, M. Van Hove, 2018, IEEE Transactions on Electron Devices.

Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

A. Sibaja-Hernandez, S. Decoutere, K. Meyer, 2011 .

Vertical GaN devices: Process and reliability

S. Decoutere, M. Bjork, M. Meneghini, 2021, Microelectronics Reliability.

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

S. Decoutere, M. V. Hove, D. Wellekens, 2018 .

Reliability in GaN-based devices for power applications

S. Decoutere, B. de Jaeger, L. Trojman, 2018, 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM).

Exploration of gate trench module for vertical GaN devices

S. Decoutere, A. Neviani, M. Meneghini, 2020, 2104.00939.

On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}\hbox{xBV}_{\rm CEO}$ Product of High-Speed SiGe HBTs

S. Decoutere, S. Van Huylenbroeck, A. Sibaja-Hernandez, 2007, IEEE Electron Device Letters.

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

A. Sibaja-Hernandez, S. Decoutere, R. Loo, 2012 .

Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2019, IEEE Transactions on Electron Devices.

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

S. Decoutere, G. Groeseneken, N. Ronchi, 2015 .

Simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

S. Decoutere, W. Schoenmaker, K. Rajendran, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

S. Decoutere, N. Ronchi, M. Van Hove, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

S. Decoutere, E. Simoen, B. de Jaeger, 2021, physica status solidi (a).

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

S. Decoutere, M. Van Hove, D. Wellekens, 2012, IEEE Electron Device Letters.

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, Microelectronics Reliability.

Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI

S. Decoutere, G. Groeseneken, Weiming Guo, 2019, IEEE Transactions on Electron Devices.

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

S. Decoutere, D. Wellekens, N. Posthuma, 2016, Journal of Electronic Materials.

GaN-on-Si power field effect transistors

S. Decoutere, G. Borghs, M. Germain, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices

S. Decoutere, B. Dutta, S. Biesemans, 2010, 2010 Symposium on VLSI Technology.

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

S. Decoutere, A. Gerosa, M. Meneghini, 2021, Micromachines.

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

S. Decoutere, N. Ronchi, S. Lenci, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

S. Decoutere, A. Chvála, S. Stoffels, 2021, IEEE Transactions on Electron Devices.

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Hugo Bender, Stefaan Decoutere, Hu Liang, 2011 .

650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

S. Decoutere, W. Luo, D. Marcon, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

S. Decoutere, G. Groeseneken, N. Ronchi, 2016 .

2 kV Breakdown Voltage GaN – on-Si DHFETs with Submicron Thin AlGaN Buffer

S. Decoutere, M. V. Hove, R. Mertens, 2011 .

ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

S. Decoutere, D. Wellekens, S. You, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Observation of Dynamic V_TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020 .

Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs

S. Decoutere, Lingling Sun, S. You, 2020, IEEE Transactions on Electron Devices.

Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020, IEEE Electron Device Letters.

On the Identification of Buffer Trapping for Bias-Dependent Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

S. Decoutere, G. Groeseneken, S. Stoffels, 2016, IEEE Electron Device Letters.

Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring

S. Decoutere, P. Offermans, M. Van Hove, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Experimental Benchmarking of Electrical Methods and $\mu $ -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

S. Decoutere, M. Baelmans, I. De Wolf, 2016, IEEE Transactions on Electron Devices.

GAN-on-Si HEMTs for 50V RF applications

S. Decoutere, F. Vanaverbeke, R. Venegas, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Successful Selective Epitaxial Si1 − x Ge x Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

N. Collaert, S. Decoutere, R. Loo, 2003 .

Polycrystalline Silicon-Germanium Electrode Contact Technology Improvement for MEMS Applications

S. Decoutere, J. Celis, S. Severi, 2009 .

Impact of isolation scheme on thermal resistance and collector-substrate capacitance of SiGe HBTs

A. Sibaja-Hernandez, S. Decoutere, S. Van Huylenbroeck, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

TCAD based device architecture exploration towards half-terahertz silicon/germanium heterojunction bipolar technology

A. Sibaja-Hernandez, S. Decoutere, S. Van Huylenbroeck, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Materials.

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Applied Physics Express.

Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18um CMOS

S. Decoutere, M. Da Rold, G. Badenes, 2000, 30th European Solid-State Device Research Conference.

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

S. Decoutere, M. Uren, Martin Kuball, 2020, IEEE Electron Device Letters.

The impact of leakage on dynamic RON in GaN-on-Si HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2020 .

Add-on Cu/SiLK/sup TM/ module for high Q inductors

S. Decoutere, B. Nauwelaers, S. Jenei, 2002, IEEE Electron Device Letters.

Impact of substrate resistivity on the high frequency performance of metal interconnect

L. Deferm, S. Decoutere, R. Kuhn, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

S. Decoutere, D. Wellekens, N. Posthuma, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Experimental determination of selfheating in silicon resistors operated at cryogenic temperatures

L. Deferm, S. Decoutere, G. Declerck, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013 .

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Dirk Wellekens, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Electron Devices.

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

S. Decoutere, M. Van Hove, D. Wellekens, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

GaN-based HEMTs tested under high temperature storage test

Denis Marcon, Stefaan Decoutere, G. Borghs, 2011, Microelectron. Reliab..

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion

S. Decoutere, M. Van Hove, S. Stoffels, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

S. Decoutere, C. Fiegna, E. Sangiorgi, 2022, IEEE Electron Device Letters.

TCAD-based design and verification of the components of a 200 V GaN-IC platform

S. Decoutere, O. Syshchyk, Pavan Vudumula, 2022, Solid-State Electronics.

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

S. Decoutere, A. Tallarico, C. Fiegna, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Enrico Sangiorgi, G. Meneghesso, M. Meneghini, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Enrico Sangiorgi, Niels Posthuma, Claudio Fiegna, 2019, IEEE Electron Device Letters.

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2018, IEEE Transactions on Electron Devices.

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Decoutere, C. Fiegna, B. Bakeroot, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2017, IEEE Electron Device Letters.

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

S. Decoutere, M. Van Hove, G. Groeseneken, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

S. Decoutere, R. Loo, M. Caymax, 2001 .

Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN -on- S. Decoutere, K. Geens, B. Bakeroot, 2023, Physical Review Applied.

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

S. Decoutere, D. Wellekens, R. Langer, 2022, Applied Physics Letters.

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

S. Decoutere, G. Groeseneken, Weiming Guo, 2019, IEEE Electron Device Letters.

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

S. Decoutere, N. Ronchi, S. Stoffels, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

J.-P. Raskin, A. Mercha, S. Decoutere, 2008, IEEE Transactions on Electron Devices.

Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

A. Mercha, S. Decoutere, S. Donnay, 2006, IEEE Transactions on Electron Devices.

Influence of majority carrier bandtails on the performance of semiconductor devices

S. Decoutere, R. Mertens, G. Borghs, 1992 .

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

S. Decoutere, A. Bevilacqua, A. Neviani, 2022, IEEE Transactions on Electron Devices.

Optimization of external poly base sheet resistance in 0.13um quasi self-aligned SiGe:C HBTs

A. Sibaja-Hernandez, S. Decoutere, K. Meyer, 2009 .

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, A. Magnani, 2021 .

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, Xiangdong Li, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs

S. Decoutere, M. Germain, J. Das, 2010, 68th Device Research Conference.

An easy-to-use mismatch model for the MOS transistor

Willy Sansen, Stefaan Decoutere, Herman Maes, 2002, IEEE J. Solid State Circuits.

1/f noise in deep submicron CMOS technology for RF and analogue applications

Cor Claeys, Eddy Simoen, Mercha Abdelkarim, 2004, SPIE International Symposium on Fluctuations and Noise.

Determination of the proximity parameters in electron beam lithography using doughnut-structures

S. Decoutere, D. Lanneer, R. Jonckheere, 1986 .

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

S. Decoutere, C. Fiegna, N. Posthuma, 2021, IEEE Transactions on Electron Devices.

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2017, IEEE Electron Device Letters.

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, 2018, IEEE Transactions on Electron Devices.

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Alexander Satka, Juraj Marek, Ales Chvála, 2017, Microelectron. Reliab..

Improvement of PECVD Silicon–Germanium Crystallization for CMOS Compatible MEMS Applications

Ann Witvrouw, Stefaan Decoutere, Simone Severi, 2010 .

A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Cor Claeys, Eddy Simoen, Ludo Deferm, 1998 .

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

S. Decoutere, G. Meneghesso, C. de Santi, 2022, Applied Physics Letters.

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

S. Decoutere, M. Meneghini, G. Meneghesso, 2022, IEEE International Reliability Physics Symposium.

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

S. Decoutere, G. Meneghesso, F. Rampazzo, 2022, Microelectronics Reliability.

High Q inductors and capacitors on Si substrate

S. Decoutere, B. Nauwelaers, G. Vanhorebeek, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

Add-on Cu/SiLK™ Module for High Inductors

Bart Nauwelaers, Karen Maex, Stefaan Decoutere, 2002 .

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

FinFET technology for analog and RF circuits

Guido Groeseneken, Willy M. C. Sansen, Piet Wambacq, 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

Passive on-chip components: Trends and challenges for RF applications

S. Decoutere, Morin Dehan, Abdelkarim Mercha, 2005 .

Pedestal collector optimization for high speed SiGe:C HBT

S. Decoutere, S. Van Huylenbroeck, K. De Meyer, 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-$Q$ Above-IC Inductors

Chung-Yu Wu, Wen-Chieh Wang, Zue-Der Huang, 2009, IEEE Microwave and Wireless Components Letters.

SiGe HBT for application in BiCMOS technology : II. Design, technology and performance

Magnus Willander, Stefaan Decoutere, Herman Maes, 2001 .

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, X. Li, 2018, Microelectron. Reliab..

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

Denis Marcon, Gustaaf Borghs, Marleen Van Hove, 2011, IEEE Electron Device Letters.

Add-on modules for high Q integrated passive components

Bart Nauwelaers, S. Decoutere, S. Jenei, 2001 .

Au-free , High-Breakdown AlGaN / GaN MISHEMTs with Low Leakage , High Yield and Robust TDDB Characteristics

S. Decoutere, M. V. Hove, D. Wellekens, 2011 .

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

S. Decoutere, G. Groeseneken, N. Posthuma, 2021, IEEE Transactions on Power Electronics.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Impact of fin width on digital and analog performances of n-FinFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2007 .

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

S. Decoutere, H. Maes, M. Willander, 2001 .

Pushing the speed limits of SiGe:C HBTs up to 0.5 Terahertz

Bernd Heinemann, Pascal Chevalier, Alain Chantre, 2009, 2009 IEEE Custom Integrated Circuits Conference.

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Transactions on Electron Devices.

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

S. Decoutere, B. de Jaeger, N. Ronchi, 2015 .

CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

S. Decoutere, O. Pedreira, J. de Coster, 2009, TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference.

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

Eddy Simoen, S. Decoutere, C. Claeys, 1996 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2018, IEEE Electron Device Letters.

SiGe HBTs With Normal High-Speed Emitter-Up and Reverse Low-Power Collector-Up Operation

S. Decoutere, Li Jen Choi, S. Van Huylenbroeck, 2008, IEEE Transactions on Electron Devices.

Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

T. Detzel, S. Decoutere, M. Meneghini, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

S. Decoutere, A. Neviani, G. Meneghesso, 2022, Microelectronics Reliability.

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

S. Decoutere, C. Fiegna, E. Sangiorgi, 2022, IEEE Transactions on Electron Devices.

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, IEEE Transactions on Electron Devices.

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

P. Wambacq, A. Mercha, S. Decoutere, 2004, IEEE Journal of Solid-State Circuits.

Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

P. Wambacq, B. Parvais, A. Mercha, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Analysis of the FinFET parasitics for improved RF performances

B. Parvais, A. Mercha, S. Decoutere, 2007, 2007 IEEE International SOI Conference.

Scalable and multibias high frequency modeling of multi-fin FETs

A. Caddemi, Dominique Schreurs, Giovanni Crupi, 2006 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology

S. Decoutere, A. Neviani, O. Syshchyk, 2022, 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME).

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

S. Decoutere, S. Stoffels, S. You, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

MOSFET gate resistance determination

Stefaan Decoutere, Roberto S. Murphy-Arteaga, Reydezel Torres-Torres, 2003 .

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

High performance modules for integrated passives in silicon technologies

Bart Nauwelaers, Stefaan Decoutere, Stefaan Van Huylenbroeck, 2001 .

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Juraj Marek, Daniel Donoval, Stefaan Decoutere, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Role of the GaN-on-Si Epi-Stack on ΔRON Caused by Back-Gating Stress

S. Decoutere, C. Fiegna, N. Posthuma, 2023, IEEE Transactions on Electron Devices.

A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

A. Sibaja-Hernandez, S. Decoutere, H. Maes, 2005 .

A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process

Geert Van der Plas, Stefaan Decoutere, Stéphane Donnay, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

S. Decoutere, M. V. Hove, G. Verzellesi, 2015 .

Influence of Doping Profile and Halo Implantation on the Threshold Voltage Mismatch of a 0.13um CMOS Technology

W. Sansen, S. Decoutere, E. Augendre, 2002, 32nd European Solid-State Device Research Conference.

Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations

Martine Baelmans, Ingrid De Wolf, Stefaan Decoutere, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Geometry Dependence of 1/f Noise in n‐ and p‐channel MuGFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2005 .