Y. Ha

Highly manufacturable high density phase change memory of 64Mb and beyond

Kinam Kim, S. Lee, S.J. Ahn, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A novel cell technology using N-doped GeSbTe films for phase change RAM

S. Lee, I. Baek, S.O. Park, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

S.O. Park, H. Kim, U. Chung, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Writing current reduction for high-density phase-change RAM

S.Y. Lee, S.J. Ahn, Kinam Kim, 2003, IEEE International Electron Devices Meeting 2003.

An edge contact type cell for Phase Change RAM featuring very low power consumption

U-In Chung, S.O. Park, J.H. Yi, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Novel cell structure of PRAM with thin metal layer inserted GeSbTe

U-In Chung, Y.T. Kim, S.Y. Lee, 2003, IEEE International Electron Devices Meeting 2003.

Observation of molecular nitrogen in N-doped Ge2Sb2Te5

Y. Ha, B. Kuh, J. Noh, 2006 .

Low power operating bipolar TMO ReRAM for sub 10 nm era

S. J. Kim, J. H. Kim, R. Jammy, 2010, 2010 International Electron Devices Meeting.