R. Kaihara

Neuron-MOS Temporal Winner Search Hardware for Fully-Parallel Data Processing

Tadashi Shibata, Tadahiro Ohmi, Tatsuo Morimoto, 1995, NIPS.

The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$ ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

R. Kaihara, T. Ohmi, S. Sugawa, 2010, IEEE Transactions on Semiconductor Manufacturing.

Excellent electro/stress-migration-resistance surface-silicide passivated giant-grain Cu-Mg alloy interconnect technology for giga scale integration (GSI)

Tadahiro Ohmi, T. Takewaki, Takahisa Nitta, 1995, Proceedings of International Electron Devices Meeting.