C. Burrus

发表

An optical-feedback transimpedance receiver for high sensitivity and wide dynamic range at low bit rates

B. Kasper, A. McCormick, C. Burrus, 1988 .

Densely spaced WDM coherent optical star network

B. Kasper, C. Burrus, B. Glance, 1987 .

Densely spaced FDM coherent star network with optical signals confined to equally spaced frequencies

B. Kasper, C. Burrus, B. Glance, 1988 .

Ultrawide-band long-wavelength p-i-n photodetectors

J. Bowers, C. Burrus, 1987 .

Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser

Gadi Eisenstein, Rodney S. Tucker, Shin-Shem Pei, 1986 .

High Repetition Rate Electro-Optic Sampling With An Injection Laser

C. Burrus, J. Wiesenfeld, R. Tucker, 1986, Topical Meeting on Ultrafast Phenomena.

Planar diffused gallium arsenide millimeter-wave varactor diodes

C. Burrus, 1967 .

All-optical wavelength conversion and broadcasting to eight separate channels by a single semiconductor optical amplifier delay interferometer

Juerg Leuthold, E. Y. Chen, M. A. Cappuzzo, 2002, Optical Fiber Communication Conference and Exhibit.

Resonant p-i-n-FET receivers for lightwave subcarrier systems

C. Burrus, J. Talman, T. Darcie, 1988 .

Wide-band lightwave distribution system using subcarrier multiplexing

Patrick P. Iannone, Thomas Edward Darcie, Bryon L. Kasper, 1989 .

Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes

K. Ogawa, A. G. Dentai, C. Burrus, 1981 .

Frequency stabilisation of FDM optical signals

Gadi Eisenstein, B. Glance, L. W. Stulz, 1987 .

Widely tunable (45 nm, 5.6 THz) multi-quantum-well three-branch Y3-lasers for wavelength-multiplexed optical networks

C. Burrus, M. Kuznetsov, A. Dentai, 1993, Proceedings of LEOS '93.

A 40-Gb/s integrated balanced optical front end and RZ-DPSK performance

S. Chandrasekhar, A. Adamiecki, J. Leuthold, 2003, IEEE Photonics Technology Letters.

InGaAs PIN photodetectors with modulation response to millimetre wavelengths

John E. Bowers, R. J. McCoy, J. Bowers, 1985 .

Spectrum-sliced fiber amplifier light source with a polarization-insensitive electroabsorption modulator

J. P. Meester, C. Burrus, J. Stone, 1994 .

Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers

C. Burrus, T. Wood, T. Chang, 1991 .

Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission lines

B. I. Miller, B. Miller, C. Burrus, 1971 .

Neodymium‐doped silica lasers in end‐pumped fiber geometry

C. Burrus, J. Stone, C. A. Burrus, 1973 .

Neodymium-Doped Fiber Lasers: Room Temperature cw Operation with an Injection Laser Pump.

C. Burrus, J. Stone, 1974, Applied optics.

Laser action in photopumped GaAs ribbon whiskers

C. Burrus, J. Stone, J. Campbell, 1980 .

Picosecond pulses from an optically pumped ribbon‐whisker laser

C. Burrus, J. Wiesenfeld, M. Duguay, 1980 .

High-speed 2 × 2 electrically driven spatial light modulator made with GaAs/AlGaAs multiple quantum wells(MQWs)

Thomas H. Wood, J. H. English, J. E. Henry, 1987 .

Intercavity coupling gap width dependence in coupled-cavity lasers

Larry A. Coldren, Robert G. Swartz, Thomas L Koch, 1984 .

40 GHz active mode-locking in a 1.5 mu m monolithic extended-cavity laser

U. Koren, B. Miller, T. Koch, 1989 .

Temperature dependence of hydroxyl formation in the reaction of hydrogen with silica glass

C. Burrus, J. Wiesenfeld, D. Marcuse, 1987 .

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

G. Raybon, C. Burrus, F. Koyama, 1993 .

Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers

C. Burrus, A. Srivastava, J. Zyskind, 1986 .

Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator

T. P. Lee, C. Burrus, Tien Pei Lee, 1984 .

A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

G. Taylor, C. Burrus, P. Cooke, 1993 .

1.55 μm multiquantum well semiconductor optical amplifier with low gain ripple and high coupling efficiency for photonic circuit integration

U. Koren, B. Miller, M. Young, 1993 .

Densely Spaced FDM Optical Coherent System With Near Quantum-Limited Sensitivity and Computer-Controlled Random Access Channel Selection

L. D. Tzeng, Uziel Koren, Bernard Glance, 1989 .

Measurement of beam parameters of index-guided and gain-guided single-frequency InGaAsP injection lasers

C. Burrus, D. Marcuse, T. Lee, 1982 .

Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 mu m

C. Burrus, J. Zyskind, J. Centanni, 1989 .

Picosecond Pulses from an Optically Pumped GaAs Laser

C. Burrus, J. Wiesenfeld, M. Duguay, 1980 .

Polarisation-insensitive coherent lightwave system using wide-deviation FSK and data-induced polarisation switching

Leonard J. Cimini, K.-Y. Liou, I.M.I. Habbab, 1988 .

Pulse dispersion and refractive-index profiles of some low-noise multimode optical fibers

R. D. Standley, Tingye Li, W. S. Holden, 1973 .

Room-temperature 1.3 μm c.w. operation of a glass-clad Nd:y.a.g. single-crystal fibre laser end pumped with a single l.e.d.

C. Burrus, J. Stone, A. Dentai, 1976 .

Measurement of very-high-speed photodetectors with picosecond InGaAsP film lasers

C. Burrus, J. Wiesenfeld, A. Chraplyvy, 1983 .

Picosecond response of steady‐state photovoltaic effect in an asymmetrical graded semiconductor superlattice structure

C. Burrus, A. Cho, Li‐Min Chen, 1993 .

Characteristics of novel graded superlattice high-speed photovoltaic detector

C. Burrus, A. Cho, J. Liu, 1993 .

Picosecond InAlGaAs Photovoltaic Detector with a Graded Superlattice Structure

C. Burrus, A. Cho, J. Liu, 1993 .

Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 < lambda < 2.2 mum.

C. Burrus, J. Zyskind, J. Sulhoff, 1992, Applied optics.

Phase‐matched second‐harmonic generation in vapor‐grown GaP ribbon waveguides

C. Burrus, J. Stone, R. Standley, 1979 .

High‐Frequency Silicon Varactor Diodes

C. Burrus, 1961 .

Narrow-band FiEnd etalon filters using expanded-core fibers

C. Burrus, D. Marcuse, L. Stulz, 1992 .

Focusing Effects in Interferometric Analysis of Graded-index Optical Fibers.

C. Burrus, J. Stone, 1975, Applied optics.

Experimental assessment of 1.3-µm GRECC lasers for fiber-optic communication systems

Jean-Marc P. Delavaux, C. Burrus, Y. Park, 1986 .

Linewidth of 1.3μm cleaved-coupled-cavity lasers

T. Koch, J. Bowers, C. Burrus, 1985 .

Narrow-linewidth fibre-external-cavity injection lasers

Y. K. Jhee, C. Burrus, K. Liou, 1985 .

Broadband wavelength shifter for picosecond optical pulses at 1.5 mu m

U. Koren, G. Raybon, C. Burrus, 1993 .

High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror

C. Burrus, T. Lee, A. Dentai, 1982 .

Operation of a single quantum well heterojunction field‐effect photodetector

G. Taylor, C. Burrus, P. Cooke, 1991 .

Nd : Y2O3 single‐crystal fiber laser: Room‐temperature cw operation at 1.07‐ and 1.35‐μm wavelength

C. Burrus, J. Stone, 1978 .

Growth of single‐crystal sapphire‐clad ruby fibers

L. Coldren, C. Burrus, 1977 .

Formation of hydroxyl due to reaction of hydrogen with silica optical fiber preforms

C. Burrus, J. Wiesenfeld, D. Marcuse, 1985 .

B.S.T.J. brief: Reduction of the 1.38-μm water peak in optical fibers by deuterium-hydrogen exchange

C. Burrus, J. Stone, C. A. Burrus, 1980, The Bell System Technical Journal.

Planar millimeter-wave epitaxial silicon Schottky-barrier converter diodes

C. Burrus, W. Rusch, 1968 .

1.1 Gb/s pseudorandom pulse-code modulation of 1.27 μm wavelength c.w. InGaAsP/InP d.h. lasers

W. M. Muska, A. G. Dentai, S. M. Abbott, 1978 .

InGaAsP p-i-n photodiodes with low dark current and small capacitance

C. Burrus, T. Lee, A. Dentai, 1979 .

Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate

C. Burrus, H. Shtrikman, M. Oron, 1982 .

22-GHz Bandwidth InGaAs/InP PIN Photodiodes

J. Bowers, C. Burrus, R. Tucker, 1985, Topical Meeting on Picosecond Electronics and Optoelectronics.

Self-contained LED-pumped single-crystal Nd: YAG fiber laser

C. Burrus, J. Stone, 1977 .

2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density

John Lehrer Zyskind, Catherine Caneau, A. G. Dentai, 1987 .

High-speed GalnAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm

John Lehrer Zyskind, John E. Bowers, M. A. Pollack, 1986, International Laser Science Conference.

A point-contact diode for higher-order harmonic generation of millimeter waves, utilizing shallow diffused junctions

C. Burrus, 1964 .

The fabrication and performance of 1.3μm DFB EMBH lasers with coplanar contacts

Gregory Raybon, C. A. Burrus, A. B. Piccirilli, 1990 .

Measuring high-bandwidth fibres in the 1.3 μm region with picosecond ingaasp injection lasers and ultrafast ingaas detectors

T. P. Lee, Chinlon Lin, F. T. Stone, 1981 .

Single-crystal fiber-optical devices: a Nd:YAG fiber laser (A)

C. Burrus, J. Stone, 1975 .

Gas-in-glass-a new Raman-gain medium: molecular hydrogen in solid-silica optical fibers.

A R Chraplyvy, J Stone, C. Burrus, 1982, Optics letters.

Short-cavity single-frequency InGaAsP buried-heterostructure lasers

R. J. Nelson, R. A. Linke, T. P. Lee, 1983 .

HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode

C. Burrus, J. Zyskind, J. Sulhoff, 1990 .

Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode

Gadi Eisenstein, Rodney S. Tucker, Jay M. Wiesenfeld, 1986 .

Optical interconnects using top-surface-emitting microlasers and planar optics.

J Jahns, Y H Lee, Y. H. Lee, 1992, Applied optics.

Wide-Bandwidth and High-Power 1.3 µm InGaAsP Buried Crescent Lasers with Semi-Insulating Fe-doped InP Current Blocking Layers

C. Burrus, C. Zah, S. Menocal, 1987, Topical Meeting on Semiconductor Lasers.

Gas-in-glass: new way to generate light

C. Burrus, A. Chraplyvy, J. Stone, 1982 .

Chapter 5 Light-Emitting-Diode Device Design

C. A. Burrus, R. H. Saul, Tien Pei Lee, 1985 .

Viewing refractive-index profiles and small-scale inhomogeneities in glass optical fibers: some techniques.

C. Burrus, R. Standley, R D Standley, 1974, Applied optics.

Balanced dual-detector receiver for optical heterodyne communication at Gbit/s rates

Katherine L. Hall, Bryon L. Kasper, J. R. Talman, 1986 .

High-speed zero-bias waveguide photodetectors

John E. Bowers, J. Bowers, C. Burrus, 1986 .

Observation of Raman scattering from N2 in a silica optical fiber

C. Burrus, A. Chraplyvy, J. Stone, 1984 .

Optical gain exceeding 35 dB at 1.56 microm due to stimulated Raman scattering by molecular D(2) in a solid silica optical fiber.

A R Chraplyvy, J Stone, C. Burrus, 1983, Optics letters.

Electric field dependence of optical absorption near the band gap of quantum-well structures.

Wood, Damen, David A. B. Miller, 1985, Physical review. B, Condensed matter.

Characteristics of top-surface-emitting GaAs quantum-well lasers

B. Tell, Y.H. Lee, K. Brown-Goebeler, 1990, IEEE Photonics Technology Letters.

Thermal-Oxide Gate GaAs MOSFET's

C. Burrus, W. Holden, J. Schaefer, 1978 .

High‐speed, hybrid InGaAs p‐i‐n/photoconductor circuit

J. Bowers, C. Burrus, L. Mollenauer, 1986 .

Fast frequency-tunable external-cavity laser

B. Glance, L. W. Stulz, C. Burrus, 1987 .

Self-aligned Ridge Guide Lasers, Monolithic Laser Arrays, And Photonic Integrated Circuits

C. Burrus, E. Burrows, K. Liou, 1992, Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.

Room‐temperature continuous operation of a ruby fiber laser

C. Burrus, J. Stone, 1978 .

Large electroabsorption effect in GaInAs/InP multiple quantum well (MQW) optical modulator grown by OMVPE

E. C. Carr, U. Koren, C. Burrus, 1988 .

High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure

W. Wiegmann, C. Burrus, D. Miller, 1983, 1983 International Electron Devices Meeting.

SMALL‐AREA HIGH‐CURRENT‐DENSITY GaAs ELECTROLUMINESCENT DIODES AND A METHOD OF OPERATION FOR IMPROVED DEGRADATION CHARACTERISTICS

R. W. Dawson, C. Burrus, C. A. Burrus, 1970 .

Radiance of small-area high-current-density electroluminescent diodes

C. Burrus, C. A. Burrus, 1972 .

Large-area back-illuminated InGaAs/InP photodiodes for use at 1 to 1.6 μm wavelength

T. P. Lee, C. Burrus, A. Dentai, 1981 .

Direct-modulation efficiency of LED's for optical fiber transmission applications

C. Burrus, T. Lee, W. Holden, 1975, Proceedings of the IEEE.

Short-cavity single-mode 1.3 μm InGaAsP lasers with evaporated high-reflectivity mirrors

T. P. Lee, C. Burrus, A. Dentai, 1981 .

Improved very-high-speed packaged InGaAs PIN punch-through photodiode

John E. Bowers, Rodney S. Tucker, J. Bowers, 1985 .

Electro‐optic sampling measurements of high‐speed InP integrated circuits

Rodney S. Tucker, Jay M. Wiesenfeld, V. D. Mattera, 1987 .

Dual-channel 1.5 Mb/s lightwave receiver employing an InGaAsP wavelength-demultiplexing detector

T. P. Lee, A. McCormick, C. Burrus, 1979 .

Optoelectronic components and systems with bandwidths in excess of 26 GHz

J. Bowers, C. Burrus, 1985 .