C. Jungemann

发表

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

C. Jungemann, B. Meinerzhagen, W. Molzer, 2003 .

Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

S. Selberherr, K. Saraswat, Y. Nishi, 2006, 2006 International Electron Devices Meeting.

Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

K. Saraswat, C. Jungemann, B. Meinerzhagen, 2008, 2008 IEEE International Electron Devices Meeting.

Failure of moments-based transport models in nanoscale devices near equilibrium

T. Grasser, C. Jungemann, B. Meinerzhagen, 2005, IEEE Transactions on Electron Devices.

Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates

C. Jungemann, B. Meinerzhagen, A. Pham, 2008 .

A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs

C. Jungemann, L. Xiaoyan, Zhao Kai, 2012 .

Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices

C. Jungemann, Sung-Min Hong, 2010, 2010 International Conference on Simulation of Semiconductor Processes and Devices.

Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress

C. Jungemann, A. Spitzer, W. Gustin, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

Physics-Based Hot-Carrier Degradation Modeling

I. Starkov, T. Grasser, C. Jungemann, 2011 .

Physics-Based Hot-Carrier Degradation Models

J. M. Park, I. Starkov, T. Grasser, 2011 .

Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode

H. Reisinger, C. Jungemann, A. Spitzer, 2010, 2010 IEEE International Reliability Physics Symposium.

Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers

C. Jungemann, A. Emunds, W. Engl, 1993 .

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

S. Selberherr, R. Dutton, C. Jungemann, 1994 .

On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

C. Jungemann, B. Meinerzhagen, A. Pham, 2009 .

An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion

C. Jungemann, Seonghoon Jin, Sung-Min Hong, 2011, IEEE Transactions on Electron Devices.

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

C. Jungemann, Sung-Min Hong, 2009 .

A full band deterministic model for semiclassical carrier transport in semiconductors

C. Jungemann, S. Smirnov, 2006 .

Full-Band Structure

C. Jungemann, B. Meinerzhagen, 2003 .

Stochastic Properties of Monte-Carlo Device Simulations

C. Jungemann, B. Meinerzhagen, 2003 .

The Monte-Carlo Method

C. Jungemann, B. Meinerzhagen, 2003 .

Analysis of the stochastic error of stationary Monte Carlo device simulations

C. Jungemann, B. Meinerzhagen, 2001 .

Efficient Full-Band Monte Carlo Simulation of Silicon Devices

C. Jungemann, B. Meinerzhagen, S. Keith, 1999 .

Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices

C. Jungemann, B. Meinerzhagen, L. Smith, 2013 .

A linear response Monte Carlo algorithm for inversion layers and magnetotransport

C. Jungemann, B. Meinerzhagen, A. Pham, 2007 .

On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFET's

C. Jungemann, S. Yamaguchi, H. Goto, 1996, IEEE Electron Device Letters.

Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator

C. Jungemann, B. Meinerzhagen, A. Pham, 2007, IEEE Transactions on Electron Devices.

Avalanche breakdown of pn-junctions — Simulation by spherical harmonics expansion of the Boltzmann transport equation

C. Jungemann, D. Jabs, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs

F. M. Bufler, C. Jungemann, B. Meinerzhagen, 2007 .

Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

C. Jungemann, B. Meinerzhagen, S. Keith, 1998, 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).

Effects of band structure and phonon models on hot electron transport in silicon

F. M. Bufler, C. Jungemann, B. Meinerzhagen, 1996 .

On the influence of band structure and scattering rates on hot electron modeling

C. Jungemann, B. Meinerzhagen, S. Keith, 1995 .

Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results

C. Jungemann, M. Schroter, W. Kraus, 2009, IEEE Transactions on Electron Devices.

A semiempirical surface scattering model for quantum corrected Monte Carlo simulation of strained Si-nMOSFETs

C. Jungemann, B. Meinerzhagen, C. D. Nguyen, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

G. Pourtois, C. Jungemann, B. Meinerzhagen, 2012 .

Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

G. Pourtois, C. Jungemann, B. Meinerzhagen, 2011, Ulis 2011 Ultimate Integration on Silicon.

Investigation of strained Si/SiGe devices by MC simulation

C. Jungemann, B. Meinerzhagen, J. Goo, 2004 .

On the number of fast interface states of standard CMOS technologies

C. Jungemann, B. Meinerzhagen, M. Eller, 1999, IEEE Electron Device Letters.

Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates

C. Jungemann, B. Meinerzhagen, A. Pham, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport

C. Jungemann, B. Meinerzhagen, A. Pham, 2008, 2008 IEEE International Electron Devices Meeting.

Electrothermal simulation of SiGe HBTs and investigation of experimental extraction methods for junction temperature

C. Jungemann, D. Jabs, H. Kamrani, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Band Structure and Scattering Mechanisms

C. Jungemann, Sung-Min Hong, A. Pham, 2011 .

Noise modeling of Si and SiGe devices

C. Jungemann, B. Meinerzhagen, B. Neinhus, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Efficiency and stochastic error of Monte Carlo device simulations

C. Jungemann, B. Meinerzhagen, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Convergence estimation for stationary ensemble Monte Carlo simulations

C. Jungemann, S. Yamaguchi, H. Goto, 1997 .

High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

R. Dutton, T. Lee, C. Jungemann, 2007 .

Studying the switching variability in redox-based resistive switching devices

S. Menzel, C. Jungemann, E. Abbaspour, 2020, Journal of Computational Electronics.

The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations

S. Menzel, C. Jungemann, E. Abbaspour, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

2 Device Simulation

N. Rinaldi, C. Jungemann, M. Schröter, 2018 .

Semi-classical simulation of state-of-the-art toward-terahertz silicon-germanium heterojunction bipolar transistors

V. d’Alessandro, C. Jungemann, Mohammad Hamed Kamrani, 2017 .

Investigation of electronic noise in THz SiGe HBTs by microscopic simulation

C. Jungemann, Sung-Min Hong, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

C. Jungemann, Sung-Min Hong, G. Matz, 2010, IEEE Transactions on Electron Devices.

Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects

C. Jungemann, Sung-Min Hong, G. Matz, 2010, 2010 International Conference on Simulation of Semiconductor Processes and Devices.

A deterministic Boltzmann equation solver for two-dimensional semiconductor devices

Sung-Min Hong, C. Jungemann, C. Jungemann, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Deterministic simulation of SiGe HBTs based on the Boltzmann equation

Sung-Min Hong, C. Jungemann, C. Jungemann, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle

Christoph Jungemann, Bernd Meinerzhagen, Matthias Bollhöfer, 2006 .

Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

C. Jungemann, B. Meinerzhagen, B. Neinhus, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Modeling of High Frequency Noise in SiGe HBTs

C. Jungemann, M. Schroter, P. Sakalas, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation

C. Jungemann, B. Meinerzhagen, M. Bartels, 2004 .

High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

Donghyun Kim, K. Saraswat, Y. Nishi, 2006, IEEE Transactions on Electron Devices.

Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Hierarchical device simulation : the Monte-Carlo perspective

Christoph Jungemann, Bernd Meinerzhagen, C. Jungemann, 2003 .

TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on [001] relaxed Si/sub 1-y/Ge/sub y/

C. Jungemann, B. Meinerzhagen, C. D. Nguyen, 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability

C. Jungemann, Tobias Linn, Z. Kargar, 2019, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection☆

C. Jungemann, H. Brachtendorf, Tobias Linn, 2017 .

Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation

C. Jungemann, Tobias Linn, Z. Kargar, 2017 .

RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver

C. Jungemann, M. Noei, 2019, Journal of Computational Electronics.

DC, AC and noise simulation of organic semiconductor devices based on the master equation

C. Jungemann, C. Zimmermann, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

The Boltzmann Transport Equation and Its Projection onto Spherical Harmonics

C. Jungemann, Sung-Min Hong, A. Pham, 2011 .

Semiclassical Transport Theory

C. Jungemann, B. Meinerzhagen, 2003 .

A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

T. Grasser, K. Rupp, C. Jungemann, 2016, Journal of computational electronics.

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

C. Jungemann, B. Meinerzhagen, C. D. Nguyen, 2005 .

Advances in spherical harmonics solvers for the Boltzmann equation

C. Jungemann, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Spherical harmonics solver for coupled hot-electron — Hot-phonon system

C. Jungemann, M. Ramonas, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities

T. Grasser, M. Waltl, G. Rzepa, 2020, IEEE Transactions on Electron Devices.

Impact of gate oxide thickness variations on hot-carrier degradation

J. M. Park, I. Starkov, T. Grasser, 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations

I. Starkov, T. Grasser, C. Jungemann, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Numerical Simulation of RF Noise in Si Devices

C. Jungemann, B. Meinerzhagen, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Investigation of the performance of strained-SiGe vertical IMOS-transistors

C. Jungemann, T. Dinh, R. Kraus, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Numerical modeling of RF noise in scaled MOS devices

C. Jungemann, B. Meinerzhagen, C. D. Nguyen, 2006 .

Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors

C. Jungemann, S. Keith, S. Yamaguchi, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

I. Starkov, T. Grasser, C. Jungemann, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation

C. Jungemann, C. Zimmermann, Weifeng Zhou, 2019, IEEE Transactions on Electron Devices.

An accurate and efficient surface scattering model for Monte Carlo device simulation

C. Jungemann, B. Meinerzhagen, C. D. Nguyen, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Bernd Heinemann, Niccolò Rinaldi, Thomas Zimmer, 2017, Proceedings of the IEEE.

The Monte-Carlo Method

C. Jungemann, B. Meinerzhagen, 2003 .

Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes

C. Jungemann, C. Zimmermann, Weifeng Zhou, 2019, Journal of Applied Physics.

Analysis of trap-induced noise in organic light-emitting diodes based on the master equation

C. Jungemann, C. Zimmermann, Weifeng Zhou, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices

S. Menzel, C. Jungemann, S. Hoffmann‐Eifert, 2018, IEEE Transactions on Nanotechnology.

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

C. Jungemann, H. Rücker, Bernd Heinemann, 2022, IEEE Transactions on Electron Devices.

Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures

C. Jungemann, B. Meinerzhagen, D. Grgec, 2002, 32nd European Solid-State Device Research Conference.

Numerical Capacitance Analysis of Single-Layer OLEDs Based on the Master Equation

C. Jungemann, C. Zimmermann, Weifeng Zhou, 2016, IEEE Transactions on Electron Devices.

Do hot electrons cause excess noise

C. Jungemann, B. Meinerzhagen, 2006 .

A Legendre Polynomial Solver for the Langevin Boltzmann Equation

C. Jungemann, B. Meinerzhagen, 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation

C. Jungemann, M. Noei, Tobias Linn, 2022, 2022 IEEE Latin American Electron Devices Conference (LAEDC).

High Performance, Strained-Ge, Heterostructure p-MOSFETs

K. Saraswat, Y. Nishi, C. Jungemann, 2007 .

A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

F. M. Bufler, C. Jungemann, B. Meinerzhagen, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation

C. Jungemann, Tobias Linn, Z. Kargar, 2017, Journal of Computational Electronics.

A numerical simulation model of valence-change-based resistive switching

Rainer Waser, Astrid Marchewka, Christoph Antonius Jungemann, 2017 .

A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

T. Grasser, K. Rupp, C. Jungemann, 2016, Journal of computational electronics.

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory

T. Grasser, M. Waltl, G. Rzepa, 2019, IEEE Transactions on Electron Devices.

Momentum-Based Transport Models

C. Jungemann, B. Meinerzhagen, 2003 .

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

T. Grasser, M. Waltl, C. Jungemann, 2021, Physical Review Applied.

Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

C. Jungemann, N. Rinaldi, N. Rinaldi, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Investigation of the vertical IMOS-transistor by device simulation

C. Jungemann, R. Kraus, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices

S. Menzel, C. Jungemann, E. Abbaspour, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Close-in phase noise in integrated oscillators

Christoph Jungemann, Thomas H. Lee, Robert W. Dutton, 2004, SPIE International Symposium on Fluctuations and Noise.

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectronics and reliability.

Hot-carrier degradation modeling using full-band Monte-Carlo simulations

E. Seebacher, T. Grasser, H. Ceric, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm

C. Jungemann, B. Meinerzhagen, 1999, 29th European Solid-State Device Research Conference.

Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

C. Jungemann, M. Thomson, H. Roskos, 2023, 2303.01564.

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

Christoph Jungemann, C. Jungemann, 2015 .

A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology

Christoph Jungemann, Bernd Meinerzhagen, J. Dang, 2014, 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS).

An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe

C. Jungemann, B. Meinerzhagen, B. Heinemann, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2003 .

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2002 .

Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling

P. Chevalier, M. Schroter, A. Chantre, 2011, IEEE Transactions on Electron Devices.

Hot-carrier degradation caused interface state profile—Simulation versus experiment

Tibor Grasser, Christoph Jungemann, Hajdin Ceric, 2011 .

Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2002, 32nd European Solid-State Device Research Conference.

Noise simulation of bipolar organic semiconductor devices based on the master equation

C. Jungemann, C. Zimmermann, Weifeng Zhou, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Field-induced detrapping in doped organic semiconductors with Gaussian disorder and different carrier localizations on host and guest sites

C. Jungemann, C. Zimmermann, M. Scheb, 2015 .

Strain-modulated electronic and thermal transport properties of two-dimensional O-silica

C. Jungemann, Yang Han, G. Qin, 2016, Nanotechnology.

Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

C. Jungemann, M. Schröter, Christoph Weimer, 2021, BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium.

Deterministic Solvers for the Boltzmann Transport Equation

Christoph Jungemann, Sung-Min Hong, C. Jungemann, 2011 .

Hall factors of Si NMOS inversion layers for MAGFET modeling

C. Jungemann, B. Meinerzhagen, D. Dudenbostel, 1999 .

Impact of the carrier distribution function on hot-carrier degradation modeling

Tibor Grasser, Christoph Jungemann, Ivan Starkov, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tibor Grasser, Christoph Jungemann, Oliver Triebl, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Impact ionization MOS (I-MOS)-Part II: experimental results

K. Gopalakrishnan, K. Gopalakrishnan, P. Griffin, 2005, IEEE Transactions on Electron Devices.

First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

T. Grasser, M. Waltl, B. Kaczer, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2005 .

The Langevin–Boltzmann Equation for Noise Calculation

C. Jungemann, 2020 .

IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE

Christoph Jungemann, Bernd Meinerzhagen, H. Goto, 1998 .

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2001 .

Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

Christoph Jungemann, H. Goto, S. Decker, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Advanced Transport Models for Sub-Micrometer Devices

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2004 .

Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

C. Jungemann, N. Rinaldi, N. Rinaldi, 2010, 2010 International Conference on Simulation of Semiconductor Processes and Devices.

Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Christoph Jungemann, Kai Bittner, Tobias Linn, 2020, Journal of Scientific Computing.

Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approach

C. Jungemann, Dino Ruić, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver

Christoph Jungemann, C. Jungemann, Dino Ruić, 2015 .

Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver

C. Jungemann, Dino Ruić, 2014, Journal of Computational Electronics.

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

C. Jungemann, 2014, Journal of Computational Electronics.

A Deterministic Approach to RF Noise in Silicon Devices Based on the Langevin–Boltzmann Equation

C. Jungemann, C. Jungemann, 2007, IEEE Transactions on Electron Devices.

Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses

C. Jungemann, M. Thomson, H. Roskos, 2023, Solid-State Electronics.

Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

C. Jungemann, M. Noei, Tobias Linn, 2022, Journal of Computational Electronics.

Investigation of moments-based transport models applied to plasma waves and the Dyakonov–Shur instability

C. Jungemann, Tobias Linn, Z. Kargar, 2018, Semiconductor Science and Technology.

A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

C. Jungemann, Dino Ruić, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

High-order spherical harmonics solution of the Boltzmann equation and noise modeling

C. Jungemann, G. Matz, S.-M. Hong, 2010, 2010 14th International Workshop on Computational Electronics.

Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion

C. Jungemann, Sung-Min Hong, 2010 .

Electron transport in extremely scaled SiGe HBTs

C. Jungemann, S.-M. Hong, C. Jungemann, 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation

C. Jungemann, Sung-Min Hong, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Simulation of magnetotransport in nanoscale devices

Sung-Min Hong, C. Jungemann, C. Jungemann, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Ballisticity of the linear response transport in nanometric silicon devices

C. Jungemann, 2007, 2007 International Semiconductor Device Research Symposium.

A deterministic solver for the Langevin Boltzmann equation including the Pauli principle

Christoph Jungemann, C. Jungemann, 2007, SPIE International Symposium on Fluctuations and Noise.

Numerical modeling of electron noise in nanoscale Si devices

Christoph Jungemann, C. Jungemann, 2007, SPIE International Symposium on Fluctuations and Noise.

Convergence of the Legendre polynomial expansion of the Boltzmann equation for nanoscale devices

C. Jungemann, B. Meinerzhagen, M. Bollhofer, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Do hot electrons produce excess noise?

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative

Christoph Jungemann, Bernd Meinerzhagen, C. Jungemann, 2005, LSSC.

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

T. Grasser, C. Jungemann, B. Meinerzhagen, 2005 .

Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems

C. Jungemann, 2007 .

Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

Bernd Meinerzhagen, C. Jungemann, B. Neinhüs, 2000, 7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427).

An analytical approach for physical modeling of hot-carrier induced degradation

Tibor Grasser, Hajdin Ceric, C. Jungemann, 2011, Microelectron. Reliab..

Hierarchical Device Simulation

Christoph Jungemann, Bernd Meinerzhagen, C. Jungemann, 2003 .