V. Afanas’ev

发表

Interface states and Pb defects at the Si(100)/HfO2 interface

B. O’Sullivan, P. Hurley, V. Afanas’ev, 2005 .

HYDROGEN-INDUCED VALENCE ALTERNATION STATE AT SIO2 INTERFACES

V. Afanas’ev, A. Stesmans, 1998 .

Intrinsic SiC/SiO2 Interface States

V. Afanas’ev, M. Schulz, G. Pensl, 1997 .

Band alignment and defect states at SiC/oxide interfaces

V. Afanas’ev, A. Stesmans, S. Dimitrijev, 2004 .

Electrical activity of interfacial paramagnetic defects in thermal (100) Si/SiO2

V. Afanas’ev, A. Stesmans, 1998 .

Ternary rare-earth metal oxide high-k layers on silicon oxide

Jürgen Schubert, Andre Stesmans, Hugo Bender, 2005 .

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

R. Degraeve, B. Kaczer, T. Grasser, 2010, 2010 International Electron Devices Meeting.

“Carbon cluster model” for electronic states at interfaces

Michael Bassler, Valeri Afanas'ev, V. Afanas’ev, 1997 .

Material-selective doping of 2D TMDC through AlxOy encapsulation.

A. Franquet, V. Afanas’ev, C. Huyghebaert, 2019, ACS applied materials & interfaces.

Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

K. Opsomer, C. Detavernier, D. Wouters, 2010 .

Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case

V. Afanas’ev, A. Stesmans, 2007 .

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

H. Dekkers, V. Afanas’ev, E. Filatova, 2020 .

Trapping of H+ and Li+ ions at the Si/SiO2 interface

V. Afanas’ev, A. Stesmans, 1999 .

Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells

V. Afanas’ev, A. Stesmans, M. Buffiere, 2014 .

Applying Complementary Trap Characterization Technique to Crystalline γ-Phase-Al 2 O 3 for Improved Understanding of Nonvolatile Memory Operation and Reliability

R. Degraeve, B. Govoreanu, V. Afanas’ev, 2010 .

Band alignment at the interfaces of Si and metals with high-permittivity insulating oxides

V. Afanas’ev, A. Stesmans, 2003 .

The effects of vacuum-ultraviolet radiation on defects in low-k organosilicate glass (SiCOH) as measured with electron-spin resonance

Y. Nishi, V. Afanas’ev, J. Shohet, 2016 .

Tunneling of holes is observed by second-harmonic generation

Christoph Adelmann, Matty Caymax, Ventsislav K. Valev, 2013 .

The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonance

V. Afanas’ev, A. Stesmans, M. Houssa, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

pMOSFET with Optimized Reliability ( VDD = 1 V ) : Meeting the NBTI Lifetime Target at Ultra-Thin EOT

R. Degraeve, L. Ragnarsson, T. Grasser, 2010 .

Injection spectroscopy of localized states in thin insulating layers on semiconductor surfaces

V. Afanas’ev, V. K. Adamchuk, 1994 .

The E γ ′ center as a probe of structural properties of nanometer-sized silica particles

V. Afanas’ev, A. Stesmans, K. Clémer, 2008 .

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements

L. Larcher, A. Padovani, D. Linten, 2019 .

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From

L. Larcher, A. Padovani, D. Linten, 2019, IEEE Transactions on Electron Devices.

Considerations for further scaling of metal-insulator-metal DRAM capacitors

G. Pourtois, S. Clima, B. Govoreanu, 2013 .

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

V. Afanas’ev, T. Kimoto, G. Pensl, 2007 .

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

V. Afanas’ev, T. Kimoto, G. Pensl, 2006 .

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

V. Afanas’ev, G. Pensl, F. Ciobanu, 2005 .

Analysis of near-interfacial SiO2 traps using photon stimulated electron tunneling

V. Afanas’ev, A. Stesmans, 1997 .

The origin of negative charging in amorphous Al2O3 films: the role of native defects

V. Afanas’ev, A. Shluger, J. Cottom, 2018, Nanotechnology.

Ultradisperse diamond cluster aggregation studied by atomic force microscopy

V. Afanas’ev, A. Vul, V. Osipov, 2000 .

Band Alignment at Interfaces of Oxide Insulators with Semiconductors

V. Afanas’ev, A. Stesmans, M. Houssa, 2011 .

Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance

V. Afanas’ev, A. Stesmans, 2005 .

Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes

V. Afanas’ev, E. Filatova, A. Konashuk, 2020 .

Dangling bond defects in silicon-passivated strained-Si1−xGex channel layers

A. Hikavyy, B. Kaczer, V. Afanas’ev, 2019, Journal of Materials Science: Materials in Electronics.

Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface

V. Afanas’ev, T. Kimoto, A. Bauer, 2010 .

Conduction band-edge d-states in high-k dielectrics due to Jahn–Teller term splittings

V. Afanas’ev, J. Lüning, G. Lucovsky, 2005 .

Optical Transitions in Monolayer WS2 observed through Transient Photoconductivity in MIS Structures

V. Afanas’ev, K. Iakoubovskii, I. Shlyakhov, 2021 .

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

C. Merckling, V. Afanas’ev, A. Stesmans, 2008 .

Polytype determination at the SiC-SiO2 interface by internal electron photoemission scattering spectroscopy

V. Afanas’ev, A. Stesmans, 2003 .

MBE-grown fluoride/GaAs(111)B heterostructures : control of interfacial barrier by Eu and Sm insulator doping

M. N. Mizerov, V. Afanas’ev, S. Novikov, 1992 .

Characterization of S centers generated by thermal degradation in SiO2 on (100)Si

V. Afanas’ev, A. Stesmans, D. Pierreux, 2002 .

Hydrogen release related to hole injection into SiO2 layers on Si

V. Afanas’ev, A. Stesmans, 2001 .

Radiation induced electron and hole traps in thermal SiO 2

V. Afanas’ev, A. Stesmans, P. Balk, 1995 .

Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance

V. Afanas’ev, A. Stesmans, S. Campbell, 2004 .

Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

V. Afanas’ev, A. Stesmans, S. Campbell, 2004 .

HfO2-based insulating stacks on 4H–SiC(0001)

V. Afanas’ev, A. Stesmans, S. Campbell, 2003 .

Electrical conduction and band offsets in Si/HfxTi1−xO2/metal structures

M. Li, V. Afanas’ev, A. Stesmans, 2004 .

Paramagnetic intrinsic point defects in nm-sized silica particles: Interaction with SiO at elevated temperatures

V. Afanas’ev, A. Stesmans, K. Clémer, 2007 .

Electron spin resonance probing of fundamental point defects in nm-sized silica particles

V. Afanas’ev, A. Stesmans, K. Clémer, 2005 .

Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

V. Afanas’ev, A. Stesmans, M. Heyns, 2001 .

Leakage currents induced in ultrathin oxides on (100)Si by deep-UV photons

V. Afanas’ev, A. Stesmans, 2000 .

Correlation Between Development of Leakage Current and Hydrogen Ionization in Ultrathin Silicon Dioxide Layers

V. Afanas’ev, A. Stesmans, 1999 .

PrimarySi29hyperfine structure ofE′centers in nm-sized silica: Probing the microscopic network structure

Andre Stesmans, Valeri Afanas'ev, V. Afanas’ev, 2008 .

Electron spin resonance probing of fundamental point defects in nanometer-sized silica particles

V. Afanas’ev, A. Stesmans, K. Clémer, 2005 .

Point defect generation in SiO2 by interaction with SiO at elevated temperatures

V. Afanas’ev, A. Stesmans, 1997 .

Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers

V. Afanas’ev, A. Stesmans, L. Souriau, 2014 .

Internal photoemission of electrons and holes from (100)Si into HfO2

Andre Stesmans, Valeri Afanas'ev, Stephen A. Campbell, 2002 .

PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION

V. Afanas’ev, A. Stesmans, 2006 .

Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

Jerome Mitard, Tibor Grasser, Guido Groeseneken, 2009 .

Reply to the comment on 'Creation of interface defects in thermal through annealing'

V. Afanas’ev, A. Stesmans, 1997 .

Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface

Andre Stesmans, Christopher Harris, Valeri Afanas'ev, 1997 .

Characterization of a n+3C/n-4H SiC heterojunction diode

V. Afanas’ev, E. Janzén, A. Mihaila, 2016 .

Effect of interlayer composition on passivation of (1 0 0)Si/HfO2 interface states by hydrogen

V. Afanas’ev, A. Stesmans, Y. Fedorenko, 2005 .

Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications

V. Afanas’ev, E. Bugiel, A. Laha, 2010, 2010 International Conference on Microelectronics.

Hole-doping induced ferromagnetism in 2D materials

G. Pourtois, V. Afanas’ev, M. Houssa, 2022, npj Computational Materials.

Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors

H. Bender, K. Opsomer, B. Govoreanu, 2011 .

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

V. Afanas’ev, E. Filatova, A. Konashuk, 2019, The Journal of Physical Chemistry C.

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation

V. Afanas’ev, A. Stesmans, B. Schoenaers, 2017 .

SiO2 as an insulator for SiC devices

V. Afanas’ev, C. Harris, 1997 .

Internal photoemission spectroscopy of semiconductor-insulator interfaces

V. Afanas’ev, V. K. Adamchuk, 1992 .

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

V. Afanas’ev, 2014 .

Intrinsic charge trapping in amorphous oxide films: status and challenges

V. Afanas’ev, A. Shluger, A. El-Sayed, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

Second-harmonic generation as characterization tool for Ge/high-k dielectric interfaces

Christoph Adelmann, Jean-Pierre Locquet, Matty Caymax, 2012, Photonics Europe.

Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations

Matthew Watkins, Alexander L. Shluger, Valeri Afanas'ev, 2013 .

Applied Physics Review: Internal photoemission at interfaces of high-k insulators with semiconductors and metals

V. Afanas’ev, A. Stesmans, 2007 .

P b 1 interface defect in thermal ( 100 ) S i / S i O 2 : 29 Si hyperfine interaction

V. Afanas’ev, A. Stesmans, Bert Nouwen, 1998 .

Conduction barrier offset engineering for DRAM capacitor scaling

Kyuho Cho, Thomas Mikolajick, Uwe Schroeder, 2016 .

Traps at the Interface of 3C-SiC/SiO2-MOS-Structures

V. Afanas’ev, S. Dimitrijev, K. Cheong, 2003 .

Contributions to the Density of Interface States in SiC MOS Structures

V. Afanas’ev, A. Stesmans, G. Pensl, 2004 .

Generation of interface states in α-SiC/SiO2 by electron injection

V. Afanas’ev, A. Stesmans, 2000 .

SiC/SiO2 interface defects

Valeri Afanas'ev, V. Afanas’ev, 2000 .

High‐k Insulating Films on Semiconductors and Metals: General Trends in Electron Band Alignment

V. Afanas’ev, A. Stesmans, M. Houssa, 2012 .

Intrinsic point defects in buckled and puckered arsenene: a first-principles study.

V. Afanas’ev, A. Stesmans, M. Houssa, 2017, Physical chemistry chemical physics : PCCP.

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Kyuho Cho, Thomas Mikolajick, Uwe Schroeder, 2016 .

Silicene on non-metallic substrates: Recent theoretical and experimental advances

V. Afanas’ev, A. Stesmans, M. Houssa, 2018, Nano Research.

Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures

A. Thean, I. Radu, V. Afanas’ev, 2016 .

Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation

V. Afanas’ev, A. Stesmans, C. Huyghebaert, 2020 .

Electron spin resonance observation of Si dangling-bond-type defects at the interface of (100) Si with ultrathin layers of SiOx, Al2O3 and ZrO2

V. Afanas’ev, A. Stesmans, 2001 .

Doping-induced ferromagnetism in InSe and SnO monolayers

G. Pourtois, V. Afanas’ev, A. Stesmans, 2020, Journal of Computational Electronics.

Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

N. Bosman, I. Radu, V. Afanas’ev, 2021, Journal of Physics D: Applied Physics.

Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

V. Afanas’ev, A. Stesmans, M. Heyns, 2002 .

Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

L. Goux, G. Kar, K. Opsomer, 2020, physica status solidi (RRL) – Rapid Research Letters.

Hole trapping at hydrogenic defects in amorphous silicon dioxide

T. Grasser, V. Afanas’ev, A. Shluger, 2015 .

Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects

V. Afanas’ev, M. Heyns, B. Sorée, 2021 .

Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

Kyuho Cho, Thomas Mikolajick, Uwe Schroeder, 2015 .

Metallization-Induced Oxygen Deficiency of γ-Al2O3 Layers

V. Afanas’ev, E. Filatova, A. Konashuk, 2016 .

Hydrogen induced dipole at the Pt/oxide interface in MOS devices

K. Opsomer, V. Afanas’ev, A. Stesmans, 2016 .

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

V. Afanas’ev, G. Borghs, W. Walukiewicz, 2011 .

Modulation of electron barriers between TiNx and oxide insulators (SiO2, Al2O3) using Ti interlayer

L. Goux, K. Opsomer, M. Jurczak, 2014 .

MBE-grown (Ca, Sr) F2 layers on Si (111) and GaAs (111): Electronic structure of interfaces

V. Afanas’ev, S. Novikov, N. Yakovlev, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Interfacial Defects in Si O 2 Revealed by Photon Stimulated Tunneling of Electrons

Andre Stesmans, Valeri Afanas'ev, V. Afanas’ev, 1997 .

Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain.

V. Afanas’ev, M. Houssa, J. Locquet, 2021, ACS applied materials & interfaces.

Internal Photoemission Spectroscopy: Fundamentals and Recent Advances

V. Afanas’ev, 2014 .

Traps at the SiC/SiO 2 -Interface

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films

V. Afanas’ev, M. Popovici, E. Filatova, 2014 .

XPS and depth resolved SXES study of HfO2/Si interlayers

E. P. Savinov, V. Afanas’ev, E. Filatova, 2010 .

Impact of crystallization behavior of SrxTiyOZ films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

H. Bender, K. Opsomer, L. Altimime, 2010 .

Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Sayan Mukherjee, S. Clima, V. Afanas’ev, 2023, IEEE Electron Device Letters.

Second-harmonic generation reveals the oxidation steps in semiconductor processing

Matty Caymax, Benjamin Vincent, Ventsislav K. Valev, 2012 .

An electric field tunable energy band gap at silicene/(0001) ZnS interfaces.

G. Pourtois, V. Afanas’ev, A. Stesmans, 2013, Physical chemistry chemical physics : PCCP.

Intrinsic electron trapping in amorphous oxide

J. Lisoni, V. Afanas’ev, A. Shluger, 2018, Nanotechnology.

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

R. Degraeve, S. Clima, A. Fantini, 2023, IEEE Transactions on Electron Devices.

SiC/SiO2 Interface States: Properties and Models

Andre Stesmans, Sima Dimitrijev, Florin Ciobanu, 2005 .

Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

V. Afanas’ev, A. Stesmans, S. Dimitrijev, 2004 .

Electronic Properties of Silicene: Insights from First-Principles Modelling

G. Pourtois, V. Afanas’ev, A. Stesmans, 2010 .

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

P. Hurley, V. Afanas’ev, A. Stesmans, 2016 .

Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

V. Afanas’ev, A. Stesmans, 2007 .

Band alignment and effective work function of atomic‐layer deposited VO2 and V2O5 films on SiO2 and Al2O3

I. Radu, V. Afanas’ev, A. Stesmans, 2015 .

Ferromagnetism in two-dimensional hole-doped SnO

G. Pourtois, V. Afanas’ev, A. Stesmans, 2018 .

Second Generation High-k Gate Insulators

M. Li, V. Afanas’ev, S. Campbell, 2006 .

Characterization of interface interactions between Graphene and Ruthenium

V. Afanas’ev, M. Heyns, B. Sorée, 2020, International Interconnect Technology Conference.

Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Andre Stesmans, Michel Houssa, Valeri Afanas'ev, 2001 .

Electron trapping in ferroelectric HfO2

L. Larcher, B. O’Sullivan, V. Afanas’ev, 2021 .

Oxidation of Silicon Carbide: Problems and Solutions

V. Afanas’ev, A. Stesmans, G. Pensl, 2002 .

Initial stages of growth of diamond island films on crystalline silicon

S. A. Grudinkin, V. Afanas’ev, N. Feoktistov, 2002 .

Defect generation in Si/SiO2/ZrO2/TiN structures: the possible role of hydrogen

V. Afanas’ev, A. Stesmans, M. Heyns, 2001 .

Positive charging of thermal SiO2 layers: hole trapping versus proton trapping

V. Afanas’ev, A. Stesmans, G. Adriaenssens, 2001 .

Proton nature of radiation-induced positive charge in SiO2 layers on Si

Andre Stesmans, Valeri Afanas'ev, V. Afanas’ev, 2001 .

Proton trapping in SiO2 layers thermally grown on Si and SiC

V. Afanas’ev, A. Stesmans, G. Pensl, 2002 .

(Invited) Introducing Lanthanide Aluminates as Dielectrics for Nonvolatile Memory Applications: A Material Scientist's View

O. Richard, H. Bender, K. Opsomer, 2010 .

Evaluation of the effective work-function of monolayer graphene on silicon dioxide by internal photoemission spectroscopy

I. Radu, V. Afanas’ev, A. Stesmans, 2019, Thin Solid Films.

The origin of negative charging in amorphous Al2O3 films: the role of native defects

V. Afanas’ev, A. Shluger, J. Cottom, 2018, Nanotechnology.

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides

V. Afanas’ev, S. Dhar, L. Feldman, 2007, International Semiconductor Device Research Symposium.

Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility

V. Afanas’ev, G. Pensl, M. Bassler, 2000 .

Interface state energy distribution in (100)Si/HfO2

V. Afanas’ev, A. Stesmans, Y. Fedorenko, 2004 .

Nanosession: Ferroelectrics ‐ New and Unusal Material Systems

U. Böttger, C. Adelmann, S. Slesazeck, 2013 .

Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors

M. Jurczak, L. Larcher, A. Redolfi, 2016 .