T. Yamazaki

发表

Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

T. Fuyuki, H. Kondo, T. Yamazaki, 2005 .

Nonuniformities of native oxides on Si(001) surfaces formed during wet chemical cleaning

T. Yamazaki, T. Aoyama, Takashi Ito, 1992 .

Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices

T. Yamazaki, T. Sugii, K. Goto, 1995, Proceedings of International Electron Devices Meeting.

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

T. Yamazaki, T. Sugii, K. Goto, 1999 .

A 11.7 GHz 1/8-divider using 43 GHz Si high speed bipolar transistor with photoepitaxially grown ultra-thin base

T. Yamazaki, Takashi Ito, T. Yamazaki, 1990, International Technical Digest on Electron Devices.

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films

T. Yamazaki, M. Konagai, Y. Kurokawa, 2017, Nanoscale Research Letters.

High-power injection lock laser platform for ArF dry/wet lithography

Yoshihiro Watanabe, Toshihiro Ito, Tamotsu Abe, 2005, SPIE Advanced Lithography.

Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy

T. Yamazaki, T. Sugii, T. Fukano, 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

Photochemical Effects for Low-Temperature Si Epitaxy

T. Yamazaki, T. Ito, R. Sugino, 1986 .

Initial growth stage of a highly mismatched strontium film on a hydrogen-terminated silicon (111) surface

T. Yamazaki, H. Asaoka, S. Shamoto, 2006 .

Direct stress measurement of Si(111) 7×7 reconstruction

T. Yamazaki, K. Yamaguchi, Y. Yokoyama, 2013 .

Direct measurement of surface stress during Bi-mediated Ge growth on Si

T. Yamazaki, M. Suemitsu, K. Yamaguchi, 2013 .

Real-time stress analysis of low-temperature Ge nanodot growth on H-terminated Si(1 1 1) 1 × 1 and Si(1 1 1) 7 × 7 surfaces

T. Yamazaki, H. Asaoka, S. Shamoto, 2008 .

Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

T. Yamazaki, T. Aoyama, Kunihiro Suzuki, 1993 .

Annealing in water vapor as a new method for improvement of silicon thin film properties

T. Fuyuki, T. Yamazaki, Y. Uraoka, 2006 .

Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas

T. Yamazaki, T. Aoyama, Takashi Ito, 1993 .

Removing native oxide from Si(001) surfaces using photoexcited fluorine gas

T. Yamazaki, T. Aoyama, Takashi Ito, 1991 .

Change of Si(110) reconstructed structure by Ge nanocluster formation

T. Yamazaki, Y. Yokoyama, H. Asaoka, 2013 .

Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low‐Temperature Si CVD Epitaxy

T. Yamazaki, T. Aoyama, N. Miyata, 1992 .

Improved current gain in bipolar transistor with bandgap narrowing in base

T. Yamazaki, T. Sugii, T. Ito, 1989 .

Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy

T. Yamazaki, Y. Nara, Satoru Watanabe, 1989 .

Defects generation by hydrogen passivation of polycrystalline silicon thin films

A. Macková, T. Fuyuki, T. Yamazaki, 2006 .

Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

Dai Yamazaki, T. Yamazaki, S. Yamamoto, 2012 .

Silicon (001) surface after annealing in hydrogen ambient

T. Yamazaki, T. Aoyama, K. Goto, 1996 .

Heavy Boron Doping in Low‐Temperature Si Photoepitaxy

Tatsuya Yamazaki, Takashi Ito, Satoru Watanabe, 1990 .

Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base

T. Yamazaki, T. Sugii, T. Ito, 1990 .

Nucleation of Oxides during Dry Oxidation of Si(001)-2×1 Studied by Scanning Tunneling Microscopy

T. Yamazaki, M. Suemitsu, H. Asaoka, 2005 .

21 psec switching 0.1 /spl mu/m-CMOS at room temperature using high performance Co salicide process

T. Yamazaki, T. Sugii, T. Fukano, 1993, Proceedings of IEEE International Electron Devices Meeting.

Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply

T. Fuyuki, T. Yamazaki, Y. Uraoka, 2005 .

Solid-phase crystallization of amorphous silicon nanowire array and optical properties

Shinya Kato, Makoto Konagai, Tatsuya Yamazaki, 2014 .

Si hetero-bipolar transistor with an SiC emitter thin epitaxial base

T. Yamazaki, T. Sugii, K. Suzuki, 1989, International Technical Digest on Electron Devices Meeting.

Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride

Hiroko Tashiro, Tatsuya Yamazaki, Takashi Ito, 1995 .

Novel evaluation of intra-grain defects in polycrystalline silicon solar cells using light emission

T. Fuyuki, H. Kondo, T. Yamazaki, 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

T. Yamazaki, H. Asaoka, S. Shamoto, 2006 .

Nonuniformities in Chemical Oxides on Silicon Surfaces Formed during Wet Chemical Cleaning

T. Yamazaki, T. Aoyama, Takashi Ito, 1996 .

Epitaxially grown base transistor for high-speed operation

T. Yamazaki, T. Sugii, T. Fukano, 1987, IEEE Electron Device Letters.