J. Pekarik

发表

A 60GHz-band 2×2 phased-array transmitter in 65nm CMOS

John R. Long, Marco Spirito, John J. Pekarik, 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS

W. L. Chan, J. Long, M. Spirito, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

RF characterization and parameter extraction for CMOS device models

Basanth Jagannathan, Jing Wang, L. Wagner, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 150 GHz Amplifier With 8 dB Gain and 6 dBm in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines

M. Seo, M. Rodwell, J. Pekarik, 2009 .

A low-power digitally controlled wideband FM transceiver

J. Long, J. Pekarik, N. Saputra, 2014, 2014 IEEE Radio Frequency Integrated Circuits Symposium.

RF CMOS for microwave and mm-wave applications

B. Jagannathan, L. Wagner, D. Goren, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 /spl mu/m CMOS

M.T. Reiha, J. Long, J. Pekarik, 2006, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.

Deep levels in Te‐doped AlSb grown by molecular beam epitaxy

J. Pekarik, H. Kroemer, J. English, 1990 .

Chapter 2 Silicon Technologies to Address mm-Wave Solutions

J. Pekarik, A. Cathelin, 2007 .

A 2.2 mW regenerative FM-UWB receiver in 65 nm CMOS

John R. Long, Nitz Saputra, John J. Pekarik, 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs

J. Pekarik, D. Harame, P. Gray, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Imaging integrated circuit dopant profiles with the force-based scanning Kelvin probe microscope

J. Pekarik, J. Slinkman, C. Daghlian, 1996 .

Study of mutual and self-thermal resistance in 90nm SiGe HBTs

J. Pekarik, D. Harame, P. Gray, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

J. Pekarik, H. Kroemer, J. English, 1993 .

An AlSb–InAs–AlSb double‐heterojunction P‐n‐P bipolar transistor

J. Pekarik, H. Kroemer, J. English, 1992 .

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

S. Reynolds, B. Sadhu, A. Valdes-Garcia, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

A 150 GHz Amplifier With 8 dB Gain and $+$6 dBm $P_{\rm sat}$ in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines

Munkyo Seo, B. Jagannathan, M.J.W. Rodwell, 2009, IEEE Journal of Solid-State Circuits.

SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

Vibhor Jain, D. L. Harame, Marwan H. Khater, 2014 .

Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

B. Jagannathan, Jing Wang, Yun Shi, 2007, 2007 IEEE Symposium on VLSI Technology.

Enabling RFCMOS solutions for emerging advanced applications

B. Jagannathan, P.E. Cottrell, Xudong Wang, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Record RF performance of 45-nm SOI CMOS Technology

B. Jagannathan, Jonghae Kim, Sungjae Lee, 2007, 2007 IEEE International Electron Devices Meeting.

A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

Corrado Carta, Munkyo Seo, Mark J. W. Rodwell, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect

R. Anna, J.J. Pekarik, M. Erturk, 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..

Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks

R. Gauthier, J. Pekarik, J. Pekarik, 1998, Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347).

A 56-to-65GHz Injection-Locked Frequency Tripler with Quadrature Outputs in 90nm CMOS

John R. Long, John J. Pekarik, Wei L. Chan, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.