W. Kloosterman

Experience with the new compact MEXTRAM model for bipolar transistors

H.C. de Graaff, W.J. Kloosterman, J.A.M. Geelen, 1989, Proceedings of the Bipolar Circuits and Technology Meeting.

Explorations for high performance SiGe-heterojunction bipolar transistor integration

J. Slotboom, W. Kloosterman, P. Deixler, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

A new analytical diode model including tunneling and avalanche breakdown

W. Kloosterman, H. C. Graaff, G. Hurkx, 1992 .

Improved compact modeling of output conductance and cutoff frequency of bipolar transistors

H. C. de Graaff, W. J. Kloosterman, J.C.J. Paasschens, 2001, IEEE J. Solid State Circuits.

Derivation of the model equations of Mextram, level 503

W. Kloosterman, J. Paasschens, 2002 .

New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes

H.C. de Graaff, W.J. Kloosterman, H. de Graaff, 1985, IEEE Transactions on Electron Devices.

Compact modeling of high-voltage LDMOS devices including quasi-saturation

A.C.T. Aarts, W.J. Kloosterman, W. Kloosterman, 2006, IEEE Transactions on Electron Devices.

Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating

W. J. Kloosterman, M. J. Swanenberg, W. Kloosterman, 2001 .

Improved modeling of output conductance and cut-off frequency of bipolar transistors

H. de Graaff, W. Kloosterman, R. Havens, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

Model derivation of Mextram 504: The Physics behind the Model

W. J. Kloosterman, Ramses van der Toorn, J.C.J. Paasschens, 2002 .

Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

H. C. de Graaff, W. J. Kloosterman, W. Kloosterman, 1995 .