D. Pavlidis

D. Pavlidis, D. Cui, A. Eisenbach, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

W. Jaegermann, D. Pavlidis, E. Cho, 2009 .

Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMTs

H. Chau, J. Graffeuil, J. Cazaux, 1989 .

Modeling of Highly-Nonlinear HBT Characteristics using a Distributed Thermal Subcircuit Derived from Pulsed Measurements

D. Pavlidis, S. Hsu, D. Sawdai, 1999, 53rd ARFTG Conference Digest.

In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring

D. Pavlidis, Jens-Peter Biethan, L. Considine, 2011 .

High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

D. Pavlidis, S. Mohammadi, J. Guyaux, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

W-band on-wafer load-pull measurement system and its application to HEMT characterization

C. Tsironis, D. Pavlidis, D. Pavlidis, 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

Power-handling capability of W-band InGaAs pin diode switches

D. Pavlidis, E. Alekseev, D. Cui, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Experimental and theoretical characteristics of high performance pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As/InAlAs HEMT's

D. Pavlidis, Y. Kwon, T. Brock, 1995 .

Material and electrical characteristics of iron doped Pt-lnAIAs schottky diodes grown by LP-MOCVD

D. Pavlidis, K. Hong, F. Séjalon, 1996 .

Material and device properties of MOCVD grown {InAlAs}/{InGaAs} HEMTs

D. Pavlidis, Y. Kwon, K. Hong, 1995 .

MOCVD growth parameter study of InP-based materials for high-performance HEMTs

D. Pavlidis, Y. Kwon, C. Hong, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Quasi-1D channel InAlAs/InGaAs HEMT's with improved f/sub max/ characteristics

D. Pavlidis, Y. Kwon, T. Brock, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP

D. Pavlidis, G. Ng, Y. Kwon, 1992, GaAs IC Symposium Technical Digest 1992.

A study of subterahertz HEMT monolithic oscillators

D. Pavlidis, Y. Kwon, 1992 .

Current Status of Heterojunction Bipolar and High-Electron Mobility Transistor Technologies

D. Pavlidis, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure

J. N. Tothill, D. Pavlidis, G. Ng, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

High speed monolithically integrated pin-MODFET transimpedance photoreceivers

D. Pavlidis, P. Bhattacharya, T. Brock, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47As p‐i‐n photodiodes

D. Pavlidis, P. Bhattacharya, J. Harrang, 1990 .

Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers

D. Pavlidis, S. Chandrasekhar, L. Lunardi, 1996 .

The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

D. Pavlidis, B. Weiss, W. Choy, 1998 .

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Youngwoo Kwon, T. L. Brock, D. Pavlidis, 1993 .

Subterahertz HEMT Monolithic Oscillators *

D. Pavlidis, Y. Kwon, 2010 .

New generation MMIC amplifier using InGaAs/InAlAs HEMTs

D. Pavlidis, G. Ng, M. Weiss, 1990 .

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

D. Pavlidis, S. Hsu, G. Meneghesso, 2001, IEEE Electron Device Letters.

Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs

D. Pavlidis, S. Hsu, G. Meneghesso, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

A physics‐based fitting and extrapolation method for measured impact ionization coefficients in III‐V semiconductors

D. Pavlidis, H. Chau, 1992 .

Time-domain network analysis of MM-wave circuits based on a photoconductive probe sampling technique

D. Pavlidis, S. Wakana, S. Williamson, 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

Carbon‐Based Quantum Cathodes

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials

D. Pavlidis, D. Cui, B. Sermage, 1999 .

Quantum Electron Sources for High Frequency Applications

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

D. Pavlidis, S. Rand, Steven Brown, 1995 .

Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

Veaceslav Ursaki, I. M. Tiginyanu, Dimitris Pavlidis, 2003 .

InP-based complementary HBT amplifiers for use in communication systems

Dimitris Pavlidis, Donald Sawdai, D. Pavlidis, 1999 .

Photoluminescence Characteristics of GaN Layers Grown on Soi Substrates and Relation to Material Properties

D. Pavlidis, G. Guillot, A. Eisenbach, 1997 .

Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications

D. Pavlidis, G. Ng, P. Marsh, 1994 .

Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors ☆

D. Pavlidis, 1999 .

Comparison of DC and high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition

D. Pavlidis, D. Cui, S. Hsu, 2002 .

Comparison of DC High-Frequency Performance of Zinc-Doped and Carbon-Doped InP / InGaAs HBTs Grown by Metalorganic Chemical Vapor Deposition

D. Pavlidis, D. Cui, S. Hsu, 2001 .

Low-Frequency Noise-Based Degradation Prediction of$hboxAl_xhboxGa_1 - xhboxN/GaN$MODFETs

D. Pavlidis, P. Valizadeh, 2006, IEEE Transactions on Device and Materials Reliability.

A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si

D. Pavlidis, E. Piner, S. Hubbard, 2003 .

Photoluminescence study of ZnO nanostructures grown on silicon by MOCVD

D. Pavlidis, H. Hartnagel, V. Sirkeli, 2012 .

AlN/GaN MISFET for high frequency applications: Physical simulation and experimental evaluation

D. Pavlidis, S. Seo, K. Ghose, 2007, 2007 European Microwave Integrated Circuit Conference.

Fast and Ultrafast Processes in AlGaN/GaN Channels

D. Pavlidis, L. Eastman, J. Shealy, 2002 .

Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

D. Pavlidis, T. Hashizume, K. Boutros, 2000 .

Large-signal characteristics of AlGaN/GaN power MODFETs

D. Pavlidis, D. Grider, N. Nguyen, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

Interface properties and electrical characteristics of III-V nitride-based MISFETS

D. Pavlidis, A. Eisenbach, E. Alekseev, 1999 .

Electron Energy Distribution

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

90 to 180 GHz Heterostructure Monolithic Integrated Doubler

Youngwoo Kwon, Geok Ing Ng, M. Tutt, 1991 .

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

D. Pavlidis, B. Damilano, R. Langer, 2003 .

Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2011 .

Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2010 .

InGaAs-based MM-wave integrated subharmonic mixer exhibiting low input power requirement and low noise characteristics

D. Pavlidis, P. Marsh, K. Hong, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Quasi-1D Channel InAlAs/InGaAs HEMT's with Improved fmax Characteristics.

Youngwoo Kwon, D Pavlidis, T Brock, 1994 .

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Paul R. Berger, D. Pavlidis, G. Ng, 1990 .

Peculiarities of the photon-assisted field emissions from GaN nanorods

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2010 .

Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire

D. Pavlidis, A. Eisenbach, G. Marowsky, 1999 .

Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVD

D. Pavlidis, M. Razeghi, J. Leburton, 2021, Photonics.

Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

D. Pavlidis, V. Ursaki, I. Tiginyanu, 2010 .

Peculiarities of the electron field emission from quantum-size structures

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2003 .

Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

D. Pavlidis, N. Syrbu, V. Ursaki, 2003 .

GaN THz Elect

D. Pavlidis, 2004 .

GaN THz electronics

D. Pavlidis, 2004 .

Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2008 .

Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs single HBTs

D. Pavlidis, S. Mohammadi, B. Bayraktaroglu, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Band Bending and Work Function

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

Field emission from ZnO whiskers under intervalley electron redistribution

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2012 .

A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors

D. Pavlidis, S. Hsu, 2003 .

Gunn effect in field-emission phenomena

D. Pavlidis, H. Hartnagel, K. Mutamba, 2005 .

Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

D. Pavlidis, A. Eisenbach, J. Singh, 1998 .

GaN Based Quantum Cathodes

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Hartmut Fuess, Hans L. Hartnagel, Dimitris Pavlidis, 2006 .

Current through the Barrier Structures

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

A self-supporting monolith of highly aligned carbon nanotubes as device structure for sensor applications.

D. Pavlidis, J. J. Schneider, O. Yilmazoglu, 2009, Chemical communications.

Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

D. Pavlidis, D. Cui, A. Eisenbach, 2002 .

Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

H. Morkoç, D. Pavlidis, E. Alekseev, 2006 .

Vacuum Nanoelectronic Devices: Novel Electron Sources and Applications

Hans L. Hartnagel, Dimitris Pavlidis, Hidenori Mimura, 2015 .

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

D. Pavlidis, P. Sengupta, Junxia Shi, 2018 .

Low interface state density AlN/GaN MISFETs

D. Pavlidis, A. Eisenbach, E. Alekseev, 1999 .

Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

Pallab Bhattacharya, Dimitris Pavlidis, Geok Ing Ng, 1988 .

Gallium-nitride-based plasmonic multilayer operating at 1.55 μm.

D. Pavlidis, C. Tripon-Canseliet, J. Chazelas, 2012, Optics letters.

Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide

D. Pavlidis, S. Rand, Steven Brown, 1994 .

Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics

D. Pavlidis, S. Mohammadi, Jae-Woo Park, 2000 .

GaN Negative Differential Resistance Components with Terahertz Operation Capability: From Fundamentals to Devices

D. Pavlidis, 2005 .

Large-signal microwave performance of GaN-based NDR diode oscillators

D. Pavlidis, E. Alekseev, 2000 .

MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics

D. Pavlidis, K. Hong, D. Pavlidis, 1997 .

Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases

D. Pavlidis, P. Bhattacharya, D. Sawdai, 1999, International Conference on Indium Phosphide and Related Materials.

Electron field emission from wide bandgap semiconductors under intervalley carrier redistribution

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2009 .

Quantum-size resonance tunneling in the field emission phenomenon

D. Pavlidis, H. Hartnagel, K. Mutamba, 2004 .

Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs

D. Pavlidis, S. Mohammadi, S. Hubbard, 2000 .

Breakdown-speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designs

K. Tomizawa, D. Pavlidis, Hin-Leung Chau, 1992 .

GaN surface electron field emission efficiency enhancement by low-energy photon illumination

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2012 .

Si Based Quantum Cathodes

D. Pavlidis, H. Mimura, H. Hartnagel, 2015 .

Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4

D. Pavlidis, K. Hong, 1996 .

Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl/sub 4/

D. Pavlidis, K. Hong, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Transport equation approach for heterojunction bipolar transistors

Dimitris Pavlidis, K. Tomizawa, D. Pavlidis, 1990 .

Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors

D. Pavlidis, K. Tomizawa, H. Chau, 1993 .

Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

D. Pavlidis, G. Ng, M. Tutt, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

D. Pavlidis, D. Cui, S. Hsu, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Technology aspects of GaN-based diodes for high-field operation

Dimitris Pavlidis, Seth M. Hubbard, Cezary Sydlo, 2006 .

III-V nitride-based two terminal devices for high power, high-frequency applications

D. Pavlidis, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Development of GaN-based Gunn-Effect Millimeter-Wave Sources

D. Pavlidis, A. Eisenbach, S. Hubbard, 2022 .

DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors

D. Pavlidis, E. Alekseev, 2000 .

Characterization of carbon induced lattice contraction of highly carbon doped InGaAs

D. Pavlidis, A. Eisenbach, D. Cui, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

First demonstration of monolithic InP-based HBT amplifier with PNP active load

D. Pavlidis, S. Hsu, P. Chin, 2002, IEEE Electron Device Letters.

Integration of complementary NPN and PNP InAlAs/InGaAs HBTs

D. Pavlidis, D. Cui, P. Chin, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Performance optimization of PNP InAlAs/InGaAs HBTs

D. Sawdai, D. Pavlidis, D. Pavlidis, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

New analytic determination of f/sub T/, f/sub MAX/ and the frequency dependence of current gain and power gain in HBTs

D. Pavlidis, D. Pehlke, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors

D. Pavlidis, J. Hu, K. Tomizawa, 1992 .

Transient and steady-state Monte-Carlo simulation of the effects of junction grading on carrier transport in InAlAs/InGaAs HBTs

D. Pavlidis, J. Hu, K. Tomizawa, 1990, International Technical Digest on Electron Devices.

Monte Carlo approach to transient analysis of HBTs with different collector designs

D. Pavlidis, K. Tomizawa, D. Pavlidis, 1989, IEEE Electron Device Letters.

Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interface.

D. Pavlidis, M. Tchernycheva, P. Tilmant, 2013, Optics letters.

Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data

Dimitris Pavlidis, D. R. Pehlke, D. Pavlidis, 1992 .

High power performance using InAlAas/InGaAs single heterojunction bipolar transistors

D. Pavlidis, S. Hsu, P. Chin, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Power performance of InP-based single and double heterojunction bipolar transistors

D. Sawdai, G. I. Haddad, Shawn S. H. Hsu, 1999 .

Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode

D. Pavlidis, H. Mimura, H. Hartnagel, 2012 .

Electron field emission from nanostructured surfaces of GaN and AlGaN

D. Pavlidis, H. Hartnagel, O. Yilmazoglu, 2008 .

Field emission from quantum size GaN structures

Hans L. Hartnagel, Ion Tiginyanu, Dimitris Pavlidis, 2003 .

A new emitter design of InGaP/GaAs HBTs for high-frequency applications

D. Pavlidis, Q.M. Zhang, J.M. Xu, 1993, IEEE Electron Device Letters.

HBT's for High-Frequency Applications

D. Pavlidis, Jimmy Xu, R. Surridge, 1993 .

Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

Saeed Mohammadi, D. Pavlidis, B. Bayraktaroglu, 2000 .

Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication

D. Pavlidis, D. Sawdai, D. Cui, 1999 .

Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates

Dimitris Pavlidis, G. Guillot, A. Eisenbach, 1997 .

Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification

D. Sawdai, D. Pavlidis, D. Pavlidis, 1999 .

Short-period intrinsic Stark GaN∕AlGaN superlattice as a Bloch oscillator

D. Pavlidis, V. Litvinov, A. Manasson, 2004 .

Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation

D. Pavlidis, D. Pavlidis, P. Valizadeh, 2005, IEEE Transactions on Device and Materials Reliability.

Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements

Peter Meissner, Hans L. Hartnagel, Dimitris Pavlidis, 2008, IEICE Trans. Electron..

Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

Veaceslav Ursaki, I. M. Tiginyanu, Dimitris Pavlidis, 2003 .

Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

Dimitris Pavlidis, Kabula Mutamba, Oktay Yilmazoglu, 2007 .

Fröhlich modes in GaN columnar nanostructures

D. Pavlidis, S. Hubbard, A. Sarua, 2001 .

Investigation of structural, morphological and optical properties of GaN/AlGaN heterostructures on Si

D. Pavlidis, D. Decoster, E. Dogheche, 2012, 2012 Photonics Global Conference (PGC).

Gallium nitride T-ray transmission characteristics

Derek Abbott, Dimitris Pavlidis, Bradley Ferguson, 2001, SPIE Micro + Nano Materials, Devices, and Applications.

Patterned growth of ultra long carbon nanotubes. Properties and systematic investigation into their growth process

D. Pavlidis, J. J. Schneider, O. Yilmazoglu, 2010 .

Deep Level Characterization of LP-MOCVD Grown Al 0.48 In 0.52 As

D. Pavlidis, G. Guillot, F. Ducroquet, 1993 .

Mass spectroscopy study of GaN metalorganic chemical vapor deposition

D. Pavlidis, Yongjo Pakk, 1996 .

LETTER TO THE EDITOR: The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD

Manijeh Razeghi, Dimitris Pavlidis, M. Defour, 1990 .

Quantum state transfer in double‐quantum‐well devices

D. Pavlidis, M. Tutt, J. Jakumeit, 1994 .

Reactive ion etching‐induced damage studies and application to self‐aligned InP/InGaAs heterojunction bipolar transistor technology

D. Pavlidis, T. Brock, H. Chau, 1993 .

High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

D. Pavlidis, S. Hubbard, E. Cho, 2005 .

Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition

D. Pavlidis, Jasprit Singh, Kun Wang, 1996 .

DC and high-frequency characteristics of GaN-based IMPATTs

A. K. Panda, D. Pavlidis, E. Alekseev, 2001 .

Theoretical study of GaN growth: A Monte Carlo approach

D. Pavlidis, Jasprit Singh, Kun Wang, 1994 .

Improvement of CO Sensitivity in GaN-Based Gas Sensors

Johannes Schwank, Eunjung Cho, Dimitris Pavlidis, 2006, IEICE Trans. Electron..

A review of the growth, doping, and applications of β-Ga2O3 thin films

Manijeh Razeghi, Ryan P McClintock, David J. Rogers, 2018, OPTO.

The influence of gate-feeder/mesa-edge contacting on sidegating effects in In/sub 0.52/Al/sub 0.48/ As/In/sub 0.53/Ga/sub 0.47/As heterostructure FET's

D. Pavlidis, D. Pavlidis, G. Ng, 1991, IEEE Electron Device Letters.

The influence of gate-feeder/mesa-edge contacting on sidegating effects in In0.52Al0.48 As/In0.53Ga0

D. Pavlidis, G. Ng, Y. Chan, 1991 .

Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al/sub x/Ga/sub 1-x/N/GaN MODFETs

D. Pavlidis, D. Pavlidis, P. Valizadeh, 2005, IEEE Transactions on Electron Devices.

Monolithically integrated InP-based front-end photoreceivers

Dimitris Pavlidis, Paul R. Berger, R. Lai, 1991 .

GaN-based NDR Devices for THz Generation

Dimitris Pavlidis, Seth M. Hubbard, Egor Alekseev, 2000 .

N 00014-99-1-0513 ) GaN-based NDR Devices for THz Generation

D. Pavlidis, A. Eisenbach, S. Hubbard, 2000 .

Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics

D. Pavlidis, D. Pavlidis, S. Hsu, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

Power performance and scalability of AlGaN/GaN power MODFETs

D. Pavlidis, D. Grider, N. Nguyen, 2000 .

Microwave potential of GaN-based Gunn devices

D. Pavlidis, E. Alekseev, 2000 .

Frequency Dependent Output Resistance and Transconductance in AlGaN / GaN MODFETs

D. Pavlidis, S. Hsu, D. Grider, 2022 .

In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (0.53

Dimitris Pavlidis, D. Pavlidis, Y. Chan, 1991 .

Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs

D. Pavlidis, G. Ng, 1991 .

Modulation‐doped In0.48Al0.52P/In0.2Ga0.8As field‐effect transistors

D. Pavlidis, J. Kuo, Y. Chan, 1993 .