G. Ng

G. Ng, S. McAlister, Hong Wang, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

G. Ng, Xin Guo, Hong Wang, 2019, Applied Physics Letters.

Compact microring resonators integrated with grating couplers working at 2 μm wavelength on silicon-on-insulator platform.

G. Ng, Xin Guo, Hong Wang, 2017, Applied optics.

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

G. Ng, S. Yoon, H. Zheng, 2001 .

Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

Soon Fatt Yoon, Hong Wang, Geok Ing Ng, 2000 .

Are we there yet? - a metamorphic HEMT and HBT perspective

Hong Wang, Geok Ing Ng, K. Radhakrishnan, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Are We There Yet ? – A M and HBT Pers

G. Ng, Hong Wang, K. Radhakrishna, 2005 .

Kinetics of non-radiative-defect-related degradation in GaAs/AlGaAs heterojunction bipolar transistors

G. Ng, Hong Wang, A. Hopgood, 1998 .

Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

G. Ng, Hong Wang, A. Hopgood, 1997 .

Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

G. Ng, S. Arulkumaran, M. Whiteside, 2021 .

On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate

G. Ng, S. Arulkumaran, M. Whiteside, 2020, Applied Physics Express.

Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

Hong Wang, G. Ng, K. Ang, 2015 .

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Hong Wang, G. Ng, K. Ang, 2015 .

Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

Hong Wang, G. Ng, K. Ang, 2014 .

Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

G. Ng, S. Arulkumaran, S. Vicknesh, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Hong Zhou, Geok-Ing Ng, G. Ng, 2011 .

Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs

G. Ng, S. Arulkumaran, Z.H. Liu, 2009, IEEE Electron Device Letters.

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

G. Ng, K. Ang, Zhi Hong Liu, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Single-step fabrication of surface relief diffractive optical elements on hybrid sol-gel glass

Yuen Chuen Chan, Xiaocong Yuan, HongJin Jiang, 2001 .

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Xing Zhou, Geok Ing Ng, Binit Syamal, 2016, IEEE Transactions on Electron Devices.

Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage

G. Ng, K. Ang, S. Arulkumaran, 2015 .

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

G. Ng, T. Egawa, S. Arulkumaran, 2011 .

A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP

D. Pavlidis, G. Ng, Y. Kwon, 1992, GaAs IC Symposium Technical Digest 1992.

Improved microwave noise performance in 0.15μm AlGaN/AlN/GaN HEMTs on silicon

G. Ng, S. Arulkumaran, S. Vicknesh, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure

J. N. Tothill, D. Pavlidis, G. Ng, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

G. Ng, S. Arulkumaran, Z. Liu, 2009, 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

Broadband characterisation of CPW transition and transmission line parameters for small reflection up to 94 GHz

L. H. Chua, Aik Chun Ng, G. Ng, 2000, 2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522).

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Youngwoo Kwon, T. L. Brock, D. Pavlidis, 1993 .

New generation MMIC amplifier using InGaAs/InAlAs HEMTs

D. Pavlidis, G. Ng, M. Weiss, 1990 .

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

G. Ng, Zhihong Liu, S. Arulkumaran, 2009 .

High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application

Hong Wang, G. Ng, M. Abe, 2013 .

High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology

G. Ng, M. Abe, Hong Wang, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology

G. Ng, M. Abe, Hong Wang, 2012, IEEE Electron Device Letters.

Relative Intensity Noise of Silicon Hybrid Laser

Qi Jie Wang, G. Lo, G. Ng, 2014, IEEE Journal of Quantum Electronics.

Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Hong Wang, G. Ng, Xin Guo, 2017 .

Preparation and characterization of rf-sputtered SrTiO3 thin films

G. Ng, K. Radhakrishnan, C. L. Tan, 2000 .

Experimental determination of on and off state small-signal equivalent circuit of /spl delta/-doped PHEMTS

G. Ng, J. Joe, K. Ang, 1999, 1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473).

Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

Hong Wang, G. Ng, K. Radhakrishnan, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications

D. Pavlidis, G. Ng, P. Marsh, 1994 .

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

G. Ng, Zhen Liu, Hong Zhou, 2011 .

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

G. Ng, Zhihong Liu, G. Ye, 2015 .

CMOS-compatible Ti/Al ohmic contacts (R c ° C)

G. Ng, T. Palacios, M. Heuken, 2014, Device Research Conference.

Low specific ON-resistance and high Figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks

G. Ng, T. Egawa, H. Wang, 2013, 71st Device Research Conference.

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

Hong Wang, G. Ng, K. Teo, 2012 .

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Hong Wang, G. Ng, K. Ang, 2013 .

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

G. Ng, Zhihong Liu, Hong Zhou, 2011 .

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

S. C. Foo, G. Ng, Xing Zhou, 2015 .

GaN HEMT compact model for circuit simulation

S. B. Chiah, G. Ng, Xing Zhou, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

C. H. Lee, G. Ng, Zhihong Liu, 2010 .

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Guo-Qiang Lo, Geok Ing Ng, S. Vicknesh, 2012 .

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

G. Ng, Xing Zhou, S. Arulkumaran, 2015 .

Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications

G. Ng, T. Palacios, Zhihong Liu, 2016 .

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$-particle detection

G. Ng, H. Amano, J. Kennedy, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

G. Ng, K. Radhakrishnan, S. Lourdudoss, 2006 .

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

G. Ng, K. Radhakrishnan, H. Wang, 2005, 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks.

Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si

G. Ng, Zhihong Liu, Hong Zhou, 2011 .

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

C. H. Lee, G. Ng, K. Radhakrishnan, 2010 .

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra‐heavy 131Xe+ implantation

G. Ng, J. Kennedy, K. Ang, 2017 .

Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment

G. Ng, S. Arulkumaran, S. Vicknesh, 2013, IEEE Electron Device Letters.

Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

G. Ng, H. Amano, S. Nitta, 2020, Applied Physics Express.

CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V

G. Ng, K. Lee, Zhihong Liu, 2020, Applied Physics Express.

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

G. Ng, S. Arulkumaran, S. Vicknesh, 2014 .

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

G. Ng, D. Mitchell, J. Kennedy, 2021 .

Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

G. Ng, Zhi Hong Liu, S. Arulkumaran, 2010, IEEE Transactions on Electron Devices.

Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate

S. C. Foo, G. Ng, S. Arulkumaran, 2011, IEEE Electron Device Letters.

Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, S. Yoon, H. Zheng, 2000 .

Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

G. Ng, Hong Wang, S. Yoon, 2000 .

Nondestructive determination of beryllium outdiffusion in AlGaAs/GaAs heterojunction bipolar transistor structures by low-temperature photoluminescence

G. Ng, Hong Wang, P. H. Zhang, 1999 .

Assessment of beryllium out-diffusion in AlGaAs/GaAs heterojunction bipolar transistors using low-temperature photoluminescence technique

G. Ng, Hong Wang, P. H. Zhang, 1999 .

Dry via hole etching of GaAs using high-density Cl2/Ar plasma

G. Ng, B. Ooi, Y. W. Chen, 2000 .

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

G. Ng, S. Arulkumaran, S. Vicknesh, 2013 .

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

G. Ng, M. Deki, H. Amano, 2019, AIP Advances.

Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

G. Ng, J. Kennedy, S. Tripathy, 2016 .

Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

G. Ng, S. L. Teo, M. K. Kumar, 2012, 70th Device Research Conference.

The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy

G. Ng, K. Radhakrishnan, S. Yoon, 1998 .

Thermally Tunable Fano and EIT Resonances

G. Ng, Jin Zhou, Xin Guo, 2019 .

Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

G. Ng, Jin Zhou, Xin Guo, 2018, IEEE Photonics Journal.

Electromagnetically induced transparency-like effect in microring-Bragg gratings based coupling resonant system.

G. Ng, Xin Guo, Hong Wang, 2016, Optics express.

90 to 180 GHz Heterostructure Monolithic Integrated Doubler

Youngwoo Kwon, Geok Ing Ng, M. Tutt, 1991 .

Band alignment between GaN and ZrO2 formed by atomic layer deposition

G. Ng, Hong Wang, K. Ang, 2014 .

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

G. Ng, S. Arulkumaran, K. Ranjan, 2019, IEEE Journal of the Electron Devices Society.

High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

G. Ng, S. Tripathy, S. Arulkumaran, 2014, IEEE Electron Device Letters.

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Paul R. Berger, D. Pavlidis, G. Ng, 1990 .

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

G. Ng, Hong Wang, K. Radhakrishnan, 1999 .

Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

G. Ng, B. Ooi, Yuwen Chen, 2000 .

High-rate electron cyclotron resonance etching of GaAs via holes

G. Ng, B. Ooi, C. Tan, 2000 .

RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]

A. Bensoussan, J. Cazaux, G. Ng, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances

G. Ng, Y. Xiong, Hong Wang, 2001 .

Boron Nitride Coated Three-Dimensional Graphene as an Electrically Insulating Electromagnetic Interference Shield

G. Ng, S. H. Tsang, E. Teo, 2019, 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr+ Ion implantation

G. Ng, J. Kennedy, S. Arulkumaran, 2014, 72nd Device Research Conference.

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

G. Ng, T. Palacios, Zhihong Liu, 2017, IEEE Electron Device Letters.

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Hong Wang, Geok Ing Ng, K. Radhakrishnan, 2007 .

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, K. Radhakrishnan, S. Yoon, 1999 .

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

Structural and Electrical Characterization of Al x Ga1 − x N / GaN Interfaces for UV Photodetectors

G. Ng, E. Alarcón-Lladó, S. Tripathy, 2010 .

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, S. Yoon, H. Zheng, 1998 .

Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell: Optimization of Electrical, Optical and Surface Morphology Characteristics

G. Ng, S. Yoon, H. Zheng, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs

G. Ng, Y. Hao, Jincheng Zhang, 2021, Applied Physics Express.

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Gang Ye, Hong Wang, Yang Li, 2013 .

Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

S. C. Foo, G. Ng, S. Arulkumaran, 2010, IEEE Electron Device Letters.

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Zhen Liu, Geok Ing Ng, S. C. Foo, 2009 .

Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

Pallab Bhattacharya, Dimitris Pavlidis, Geok Ing Ng, 1988 .

Design and analysis of coplanar Lange coupler for millimetre-wave applications up to 90 GHz

Hong Wang, Jun Zhou, L. H. Chua, 2000, 2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522).

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

G. Ng, Hong Wang, P. H. Zhang, 1999 .

Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

G. Ng, P. O'Sullivan, Haixia Wang, 1996 .

Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

D. Pavlidis, G. Ng, M. Tutt, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

Electrical properties and transport mechanisms of InP/InGaAs HBTs operated at low temperature

Hong Wang, Geok Ing Ng, G. Ng, 2001 .

Investigation of the degradation of InGaAs/InP double HBTs under reverse base-collector bias stress

G. Ng, Hong Wang, 2001 .

A silicon-nanowire memory driven by optical gradient force induced bistability

D. Kwong, G. Ng, H. Cai, 2015 .

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Govindo J. Syaranamual, Chee Lip Gan, Riko I. Made, 2016, Microelectron. Reliab..

Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

G. Ng, H. Wang, S. Yoon, 1999 .

Non-linear thermal resistance model for the simulation of high power GaN-based devices

G. Ng, K. Radhakrishnan, J. Mateos, 2021 .

A novel technology to form self-aligned emitter ledge for heterojunction bipolar transistors

G. Ng, Hong Wang, 2003 .

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

G. Ng, K. Ang, Zhihong Liu, 2017 .

A nanoelectromechanical systems actuator driven and controlled by Q-factor attenuation of ring resonator

Z. Suo, G. Ng, H. Cai, 2013 .

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz

G. Ng, K. Lee, Zhihong Liu, 2019, Applied Physics Express.

Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

G. Ng, T. Palacios, Zhihong Liu, 2018, IEEE Electron Device Letters.

Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

S. Arulkumaran, G. I. Ng, G. Ng, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications

Hong Wang, G. Ng, B. Yan, 2000 .

The influence of gate-feeder/mesa-edge contacting on sidegating effects in In/sub 0.52/Al/sub 0.48/ As/In/sub 0.53/Ga/sub 0.47/As heterostructure FET's

D. Pavlidis, D. Pavlidis, G. Ng, 1991, IEEE Electron Device Letters.

The influence of gate-feeder/mesa-edge contacting on sidegating effects in In0.52Al0.48 As/In0.53Ga0

D. Pavlidis, G. Ng, Y. Chan, 1991 .

Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser.

G. Ng, Xin Guo, Hong Wang, 2018, Optics express.

Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Hong Wang, G. Ng, Xin Guo, 2018 .

Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Hong Wang, G. Ng, Xin Guo, 2018 .

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Hiroshi Amano, Geok Ing Ng, Abhinay Sandupatla, 2019, Sensors.

100 nm T-gate GaN-on-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications

G. Ng, K. Lee, Zhihong Liu, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs

D. Pavlidis, G. Ng, 1991 .

A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer

D. Pavlidis, G. Ng, J. Kuo, 1993, International Conference on Indium Phosphide and Related Materials.

0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

G. Ng, H. Wang, S. Yoon, 1999 .

Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's

M. Tutt, D. Pavlidis, G. I. Ng, 1992 .

Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Per Lindström, G. Ng, K. Prasad, 1998 .

CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs

G. Ng, Yong-xin Guo, K. Lee, 2021, IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications.

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

G. Ng, Yong-xin Guo, Z. Zhong, 2021, IEEE Microwave and Wireless Components Letters.

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Zhili Sun, Nethaji Dharmarasu, K. Radhakrishnan, 2010 .

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Geok Ing Ng, S. Arulkumaran, S. C. Foo, 2010, IEEE Electron Device Letters.

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

G. Ng, K. Teo, S. Rajan, 2015 .

Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

G. Ng, S. Arulkumaran, 2015, 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).

In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

G. Ng, S. Rajan, O. Shoron, 2014, 2014 IEEE International Electron Devices Meeting.

InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Tomás Palacios, Geok Ing Ng, Haodong Qiu, 2018, IEEE Electron Device Letters.

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Guo-Qiang Lo, Hong Wang, Geok Ing Ng, 2012 .

High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon

C. H. Lee, G. Ng, Zhen Liu, 2007 .

High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs

Youngwoo Kwon, R. Lai, D. Pavlidis, 1991, [1991] GaAs IC Symposium Technical Digest.

Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

Lin-Sheng Liu, Geok-Ing Ng, G. Ng, 2009, IEEE Transactions on Microwave Theory and Techniques.

(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

G. Ng, L. Peh, C. S. Tan, 2016 .

Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

S. C. Foo, G. Ng, S. Tripathy, 2015 .

Positive Bias-Induced $V_{\rm th}$ Instability in Graphene Field Effect Transistors

J. F. Zhang, W. J. Liu, X. A. Tran, 2012, IEEE Electron Device Letters.

Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system

G. Ng, Xin Guo, Hong Wang, 2017 .

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

G. Ng, S. Abhinay, S. Nitta, 2020, Japanese Journal of Applied Physics.

Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si

S. Arulkumaran, G. Ng, S. Arulkumaran, 2009, IEEE Microwave and Wireless Components Letters.

Dry plasma etching of GaAs vias using BCl3/Ar and Cl2/Ar plasmas

Yuwen Chen, Yuen Chuen Chan, Boon S. Ooi, 1999, International Symposium on Photonics and Applications.

Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

M. Tutt, D. Pavlidis, W.-P. Hong, 1988, IEEE Electron Device Letters.