G. Huang

发表

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

Chia-Chen Wan, C. Wang, C. Su, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

A 5.2-GHz GaInP/GaAs HBT double-quadrature downconverter with polyphase filters for 40-dB image rejection

G. Huang, C. Meng, D. Sung, 2005, IEEE Microwave and Wireless Components Letters.

Direct observation of loadlines in MESFET by using average RF gate and drain currents

G. Huang, C. Chang, C. Meng, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

RF characteristics of BJT devices with selectively or fully ion-implanted collector

G. Huang, C. Meng, J.Y. Su, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

W.-F. Wu, C. Wang, C. Su, 2017, 2017 Symposium on VLSI Technology.

4-GHz Low-Phase-Noise Transformer-Based Top-Series GaInP/GaAs HBT QVCO

G. Huang, C. Meng, S. Tseng, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

Low frequency noise degradation in ultra-thin oxide (15/spl Aring/) analog n-MOSFETs resulting from valence-band tunneling

G. Huang, Tahui Wang, C. Hsu, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology

G. Huang, C. Meng, S. Tseng, 2006, 2006 European Microwave Integrated Circuits Conference.

Low-noise metamorphic HEMTs with reflowed 0.1-/spl mu/m T-gate

G.W. Huang, S.H. Chen, C.Y. Chang, 2004, IEEE Electron Device Letters.

A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy

G. Huang, K. Peng, P. Li, 2020, IEEE Electron Device Letters.

First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

H. J. Chen, J. Tarng, C. Su, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

C. Su, K. Kao, Y. Tang, 2019, Symposium on VLSI Technology.