Pengcheng Huang

发表

Heavy-Ion-Induced Charge Sharing Measurement With a Novel Uniform Vertical Inverter Chains (UniVIC) SEMT Test Structure

Shuming Chen, Bin Liang, Pengcheng Huang, 2015, IEEE Transactions on Nuclear Science.

Single-Event Pulse Broadening After Narrowing Effect in Nano-CMOS Logic Circuits

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2014, IEEE Transactions on Device and Materials Reliability.

Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2017, IEEE Transactions on Nuclear Science.

Impacts of Proton Radiation on Heavy-Ion-Induced Single-Event Transients in 65-nm CMOS Technology

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2019, IEEE Transactions on Nuclear Science.

Evaluating the single event sensitivity of dynamic comparator in 5 Gbps SerDes

Shuming Chen, Yao Liu, Pengcheng Huang, 2015, IEICE Electronics Express.

Mirror image: newfangled cell-level layout technique for single-event transient mitigation

Pengcheng Huang, Shuming Chen, Yibai He, 2014 .

Characterization of charge sharing induced by high LET heavy ions using inverter chains in a commercial bulk FinFET process

Pengcheng Huang, Bin Liang, Yaqing Chi, 2022, Semiconductor Science and Technology.

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology*

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2016 .

Novel Layout Technique for Single-Event Transient Mitigation Using Dummy Transistor

Shuming Chen, Bin Liang, Pengcheng Huang, 2013, IEEE Transactions on Device and Materials Reliability.

Simulation study of N-hit SET variation in differential cascade voltage switch logical circuits

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2015, Science China Information Sciences.

Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS process

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2012, Science China Technological Sciences.

Single event upset induced by single event double transient and its well-structure dependency in 65-nm bulk CMOS technology

Pengcheng Huang, Shuming Chen, Jianjun Chen, 2016, Science China Information Sciences.