S. Mikhrin

S. Mikhrin, I. Krestnikov, V. Wittwer, 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2001 .

Single transverse mode operation of long wavelength (/spl sim/1.3 /spl mu/m) InAsGaAs quantum dot laser

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 1999 .

Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept

A. G. Kuzmenkov, N. Ledentsov, S. Mikhrin, 2008, IEEE Journal of Quantum Electronics.

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

A. P. Vasil’ev, S. Mikhrin, N. Ledentsov, 2005 .

Concurrent multi-channel transmission of a DWDM silicon photonic transmitter based on a comb laser and microring modulators

Marco Fiorentino, Raymond G. Beausoleil, Sergey Mikhrin, 2015, 2015 International Conference on Photonics in Switching (PS).

All quantum dot modelocked vertical external cavity surface emitting laser

A. R. Kovsh, M. Golling, U. Keller, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Lasing at 1.5 µm in quantum dot structures on GaAs substrates

N. V. Kryjanovskaya, S. Mikhrin, N. Ledentsov, 2003 .

Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

A. P. Vasil’ev, A. R. Kovsh, S. Mikhrin, 2004 .

High-speed directly and indirectly modulated VCSELs

J. Lott, M. Kuntz, S. Mikhrin, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen

S. Mikhrin, A. Zhukov, A. Kovsh, 2002 .

High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm

S. Mikhrin, I. Krestnikov, M. Maksimov, 2008 .

Quantum Dot Modelocked and Broad-Band Lasers for Optical Interconnect Solutions

S. Mikhrin, I. Krestnikov, A. Zhukov, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

High-power wavelength stabilized 970nm tilted cavity laser with a 41.3dB side mode suppression ratio

M. Kuntz, S. Mikhrin, N. Ledentsov, 2007 .

A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges

S. Mikhrin, I. Krestnikov, A. Kovsh, 2008, 0804.3021.

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

S. Mikhrin, I. Krestnikov, N. Ledentsov, 2000 .

MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 1999 .

Static gain saturation in quantum dot semiconductor optical amplifiers.

Christian Meuer, Gadi Eisenstein, Dieter Bimberg, 2008, Optics express.

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2000 .

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

S.J. Chang, S. Mikhrin, S. Mikhrin, 2006, IEEE Photonics Technology Letters.

Ultrafast gain dynamics in 1.3 μm InAs/GaAs quantum-dot optical amplifiers: The effect of p doping

S. Mikhrin, I. Krestnikov, A. Kovsh, 2007 .

Ultrafast Carrier Dynamics in p-doped InGaAs Quantum Dot Amplifiers

S. Mikhrin, I. Krestnikov, A. Kovsh, 2007, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 2001 .

QD lasers: physics and applications

Matthias Kuntz, Friedhelm Hopfer, P. Werner, 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate

Nikolai N. Ledentsov, Mikhail V. Maximov, Gerrit Fiol, 2006 .

Broad-area InAs/GaAs quantum dot lasers incorporating Intermixed passive waveguide

A. C. Bryce, S. Mikhrin, A. Gladyshev, 2007 .

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

A. R. Kovsh, N. N. Ledentsov, V. A. Haisler, 2007, SPIE OPTO.

High-power singlemode CW operation of 1.5 /spl mu/m-range quantum dot GaAs-based laser

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 2005 .

Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2006 .

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

D. Bimberg, F. Hopfer, A. Mutig, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2006, Workshop on Optical Components for Broadband Communication.

Damping and feedback characteristics of quantum dot semiconductor lasers

Olwen Carroll, Guillaume Huyet, Alexey E. Zhukov, 2004, SPIE Photonics Europe.

Reduced sensitivity to external feedback in quantum dot lasers

Guillaume Huyet, David O'Brien, Christian Ribbat, 2004, SPIE OPTO.

120°C 20 Gbit/s operation of 980 nm VCSEL

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2008 .

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 1999 .

Structural and optical properties of InAs quantum dots in AlGaAs matrix

N. K. Polyakov, A. P. Vasil’ev, S. Mikhrin, 2003 .

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

A high-power 975 nm tilted cavity laser with a 0.13 nm K−1 thermal shift of the lasing wavelength

S. Mikhrin, I. Krestnikov, Y. Shernyakov, 2007 .

Wavelength-stabilized tilted cavity quantum dot laser

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 2004 .

High-power quantum dot based semiconductor disk laser

A. R. Kovsh, U. Keller, T. Sudmeyer, 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode

S. Mikhrin, N. Ledentsov, A. Kovsh, 2006 .

Tilted cavity laser (Critical Review Lecture)

Mikhail V. Maximov, Igor L. Krestnikov, Vitaly Shchukin, 2004, SPIE Optics + Photonics.

120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

M. Kuntz, S. Mikhrin, I. Krestnikov, 2008, 2008 IEEE 21st International Semiconductor Laser Conference.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

A. P. Vasil’ev, S. Mikhrin, N. Ledentsov, 2003 .

20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

M. Kuntz, S. Mikhrin, I. Krestnikov, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2002, Saratov Fall Meeting.

Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers

Nikolai N. Ledentsov, Igor L. Krestnikov, A. R. Kovsh, 2005 .

Harmonic Mode-Locking of a Quantum-Dot Laser Diode

M. Thompson, I. White, R. Penty, 2006, LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society.

High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Mikhail V. Maximov, A. R. Kovsh, N. N. Ledentsov, 2005 .

Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼ 1.3 mm

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov, A. R. Kovsh, S. Mikhrin, 2007, IEEE Journal of Quantum Electronics.

1270 nm quantum dot based semiconductor disk lasers

S. Mikhrin, I. Krestnikov, E. Rafailov, 2010, 22nd IEEE International Semiconductor Laser Conference.

Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

S. Mikhrin, I. Krestnikov, A. Kovsh, 2006 .

Long-wavelength quantum dot lasers on GaAs substrates

J. Lott, S. Mikhrin, N. Ledentsov, 2000 .

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 2003 .