I. Krestnikov

G. S. Sokolovskii, I. Krestnikov, E. Rafailov, 2013, 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.

Tunable master-oscillator power-amplifier using all chirped quantum-dot structures

Daniil I. Nikitichev, I. Krestnikov, D. Syvridis, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Tunable Master-Oscillator Power-Amplifier Based on Chirped Quantum-Dot Structures

Daniil I. Nikitichev, I. Krestnikov, D. Syvridis, 2012, IEEE Photonics Technology Letters.

High peak power and sub-picosecond Fourier-limited pulse generation from passively mode-locked monolithic two-section gain-guided tapered InGaAs quantum-dot lasers

Igor L. Krestnikov, M. Tran, Ivo Montrosset, 2012, Laser Physics.

Broadly tunable picosecond pulses quantum-dot mode-locked laser

Daniil I. Nikitichev, I. Krestnikov, E. Rafailov, 2012 .

Broad wavelength tunability from external cavity quantum-dot mode-locked laser

Daniil I. Nikitichev, I. Krestnikov, E. Rafailov, 2012 .

TUNABLE VISIBLE SHG IN CW AND PICOSECOND REGIMES

Daniil I. Nikitichev, G. S. Sokolovskii, I. Krestnikov, 2012 .

P-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics.

I. Krestnikov, E. Rafailov, D. Livshits, 2012, Optics express.

External optical feedback-induced wavelength selection and Q-switching elimination in an InAs/InGaAs passively mode-locked quantum dot laser

I. Krestnikov, D. Syvridis, H. Simos, 2012 .

Chaotic emission and tunable self-sustained pulsations in a two-section Fabry–Perot quantum dot laser

Igor L. Krestnikov, Dimitris Syvridis, Apostolos Argyris, 2011 .

Passively mode-locked monolithic two-section gain-guided tapered quantum-dot lasers: II. Record 15 Watt peak power generation

Daniil I. Nikitichev, I. Krestnikov, M. Krakowski, 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).

Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation.

Dimitris Syvridis, Charis Mesaritakis, Spiros Mikroulis, 2010, Optics express.

Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers

I. Krestnikov, D. Syvridis, H. Simos, 2010 .

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

I. Krestnikov, E. Rafailov, D. Livshits, 2010, 22nd IEEE International Semiconductor Laser Conference.

Wavelength tuning in quantum dot semiconductor disc lasers

I. Krestnikov, E. Rafailov, D. Livshits, 2010, 22nd IEEE International Semiconductor Laser Conference.

Effect of optical feedback to the ground and excited state emission of a passively mode locked quantum dot laser

Igor L. Krestnikov, Dimitris Syvridis, Charis Mesaritakis, 2010 .

Dual-wavelength mode-locked GaAs-based quantum-dot laser

D. A. Livshits, A. R. Kovsh, I. Krestnikov, 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth

D. Bimberg, M. Kuntz, S. Mikhrin, 2009, OPTO.

Small‐signal cross‐gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm

S. Mikhrin, I. Krestnikov, G. Eisenstein, 2009 .

40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers

Igor L. Krestnikov, A. R. Kovsh, Juerg Leuthold, 2008 .

Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, 2006 .

20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

D. Bimberg, M. Kuntz, F. Hopfer, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

Mikhail V. Maximov, Igor L. Krestnikov, D. Bimberg, 1997 .

VECSEL gain characterization.

I. Krestnikov, V. Wittwer, M. Hoffmann, 2012, Optics express.

Femtosecond VECSELs with up to 1-W average output power

S. Mikhrin, I. Krestnikov, V. Wittwer, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

Femtosecond VECSELs with up to 1 W average output power

S. Mikhrin, I. Krestnikov, V. Wittwer, 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).

Enhanced In(Ga)As∕GaAs quantum dot based electro-optic modulation at 1.55μm

I. Krestnikov, A. Kovsh, M. Fischer, 2007 .

Optical properties of InGaN quantum dots

I. Krestnikov, A. Strittmatter, M. Strassburg, 2004 .

All quantum dot modelocked vertical external cavity surface emitting laser

A. R. Kovsh, M. Golling, U. Keller, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Quantum dots formed by ultrathin insertions in wide-gap matrices

I. Krestnikov, N. Ledentsov, Z. Alferov, 2000 .

Temperature Dependence of Dynamic Properties and Tolerance to Optical Feedback of High-Speed 1.3- $\mu$m DFB Quantum-Dot Lasers

I. Krestnikov, A. Kovsh, M. Fischer, 2011, IEEE Photonics Technology Letters.

Microwave Properties of High Modal Gain Quantum Dot InAs/GaAs Fabry-Pérot Lasers Emitting at 1.3 μm

I. Krestnikov, A. Kovsh, M. Fischer, 2006, 2006 European Conference on Optical Communications.

InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

I. Krestnikov, N. Ledentsov, Y. Shernyakov, 2000 .

Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

Igor L. Krestnikov, Daniil A. Livshits, Ksenia A. Fedorova, 2011 .

Generation of CW tunable visible light by SHG of QD laser in a PPKTP waveguide

G. S. Sokolovskii, I. Krestnikov, D. Livshits, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Broadly tunable CW green-to-red laser source based on frequency doubling of a quantum-dot external cavity diode laser in a PPKTP waveguide

I. Krestnikov, D. Livshits, M. Cataluna, 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).

High-speed directly and indirectly modulated VCSELs

J. Lott, M. Kuntz, S. Mikhrin, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

A. R. Kovsh, I. Krestnikov, N. Ledentsov, 1999 .

Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]

I. Krestnikov, N. Ledentsov, Z. Alferov, 1997 .

RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm

S. Mikhrin, I. Krestnikov, M. Maksimov, 2008 .

Quantum dot origin of luminescence in InGaN-GaN structures

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Quantum Dot Modelocked and Broad-Band Lasers for Optical Interconnect Solutions

S. Mikhrin, I. Krestnikov, A. Zhukov, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges

S. Mikhrin, I. Krestnikov, A. Kovsh, 2008, 0804.3021.

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

S. Mikhrin, I. Krestnikov, N. Ledentsov, 2000 .

Exciton-phonon interactions and exciton pure dephasing in lens-shaped quantum dots

I. Krestnikov, G. Slepyan, S. Maksimenko, 2003 .

Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

I. Krestnikov, G. Slepyan, S. Maksimenko, 2003 .

Identification of bound exciton complexes in ZnO

I. Krestnikov, M. Strassburg, B. Meyer, 2004 .

Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Static gain saturation in quantum dot semiconductor optical amplifiers.

Christian Meuer, Gadi Eisenstein, Dieter Bimberg, 2008, Optics express.

Photoluminescence of InSb quantum dots in GaAs and GaSb matrices

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

I. Krestnikov, Z. Alferov, D. Gerthsen, 1999 .

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

I. Krestnikov, N. Ledentsov, P. Kop’ev, 1997 .

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1996 .

Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg,Zn,Cd)(S,Se)

I. Krestnikov, N. Faleev, P. Kop’ev, 1998 .

Ultrafast gain dynamics in 1.3 μm InAs/GaAs quantum-dot optical amplifiers: The effect of p doping

S. Mikhrin, I. Krestnikov, A. Kovsh, 2007 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Ultrafast Carrier Dynamics in p-doped InGaAs Quantum Dot Amplifiers

S. Mikhrin, I. Krestnikov, A. Kovsh, 2007, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

QD lasers: physics and applications

Matthias Kuntz, Friedhelm Hopfer, P. Werner, 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

I. Krestnikov, A. Kovsh, G. Eisenstein, 2008 .

Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Nikolai N. Ledentsov, Dieter Bimberg, M. V. Maximov, 2000 .

An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix

I. Krestnikov, N. Ledentsov, M. Maksimov, 1996 .

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.

Maria Ana Cataluna, Edik U Rafailov, Igor Krestnikov, 2010, Optics express.

Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality.

Dimitris Syvridis, Michel Krakowski, Charis Mesaritakis, 2013, Optics letters.

Integration of Edge-Emitting Quantum Dot Lasers With Different Waveguide Platforms Using Micro-Transfer Printing

B. Corbett, I. Krestnikov, A. Uzun, 2023, IEEE Journal of Selected Topics in Quantum Electronics.

Broad Repetition-Rate Tunable Quantum-Dot External-Cavity Passively Mode-Locked Laser with Extremely Narrow Radio Frequency Linewidth

Daniil I. Nikitichev, I. Krestnikov, E. Rafailov, 2011 .

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 1997 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2001 .

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Nikolai N. Ledentsov, Igor L. Krestnikov, D. Bimberg, 2001 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (31 January, 2001)

J. Lott, A. R. Kovsh, I. Krestnikov, 2001 .

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

V. A. Semenov, I. P. Soshnikov, I. Krestnikov, 1999 .

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm

I. Krestnikov, E. Rafailov, E. Jelmakas, 2010, 2010 12th International Conference on Transparent Optical Networks.

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

D. Bimberg, F. Hopfer, A. Mutig, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2006, Workshop on Optical Components for Broadband Communication.

1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.

I. Krestnikov, A. Kovsh, S. Höfling, 2008, Optics express.

High-power quantum dot semiconductor disk lasers

Igor L. Krestnikov, Jussi Rautiainen, Oleg G. Okhotnikov, 2012, Other Conferences.

120°C 20 Gbit/s operation of 980 nm VCSEL

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2008 .

2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser.

Jussi Rautiainen, Jari Nikkinen, Igor Krestnikov, 2010, Optics letters.

A high-power 975 nm tilted cavity laser with a 0.13 nm K−1 thermal shift of the lasing wavelength

S. Mikhrin, I. Krestnikov, Y. Shernyakov, 2007 .

Wavelength-stabilized tilted cavity quantum dot laser

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 2004 .

High-power quantum dot based semiconductor disk laser

A. R. Kovsh, U. Keller, T. Sudmeyer, 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Tilted cavity laser (Critical Review Lecture)

Mikhail V. Maximov, Igor L. Krestnikov, Vitaly Shchukin, 2004, SPIE Optics + Photonics.

120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

M. Kuntz, S. Mikhrin, I. Krestnikov, 2008, 2008 IEEE 21st International Semiconductor Laser Conference.

20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

M. Kuntz, S. Mikhrin, I. Krestnikov, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .