N. Ledentsov

J. Lott, N. Ledentsov, V. Ustinov, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Semiconductor quantum dots for application in diode lasers

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Edge and surface emitting quantum dot lasers

J. Lott, N. Ledentsov, V. Ustinov, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Ultrahigh gain and non-radiative recombination channels in 1.5 µm range metamorphic InAs–InGaAs quantum dot lasers on GaAs substrates

A. P. Vasil’ev, N. Ledentsov, Y. Shernyakov, 2004 .

Study of electron capture by quantum dots using deep-level transient spectroscopy

N. Ledentsov, V. Lantratov, I. V. Kochnev, 2001 .

Quantum dot lasers: The birth and future trends

N. Ledentsov, 1999 .

Quantum dots formed by ultrathin insertions in wide-gap matrices

I. Krestnikov, N. Ledentsov, Z. Alferov, 2000 .

Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix

N. Ledentsov, D. Gerthsen, D. Litvinov, 2000 .

Spontaneous Formation of Arrays of Strained Islands: Thermodynamics Versus Kinetics

N. Ledentsov, V. Shchukin, D. Bimberg, 1999 .

Structural characterization of self-organized nanostructures

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams

N. K. Polyakov, N. Ledentsov, V. Dubrovskii, 1997 .

Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

N. Ledentsov, G. Cirlin, V. Petrov, 1997 .

Self-Ordering of Nanostructures on Semiconductor Surfaces

N. Ledentsov, V. Shchukin, D. Bimberg, 1997 .

Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces

N. Ledentsov, V. Dubrovskii, D. Bimberg, 1997 .

Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams

N. Ledentsov, M. Maximov, V. Dubrovskii, 1997 .

Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

A. P. Vasil’ev, M. A. Bobrov, N. Ledentsov, 2018 .

Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties

N. K. Polyakov, N. Ledentsov, V. Ustinov, 2001 .

Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

A. R. Kovsh, D. Bimberg, James A. Lott, 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

Lasing at 1.5 µm in quantum dot structures on GaAs substrates

N. V. Kryjanovskaya, S. Mikhrin, N. Ledentsov, 2003 .

Molecular beam epitaxial growth of {InSb}/{GaAs(100) } and {InSb}/{Si(100) } heteroepitaxial layers (thermodynamic analysis and characterization)

N. Ledentsov, S. Ruvimov, P. Kop’ev, 1995 .

Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands

N. Ledentsov, V. Shchukin, D. Bimberg, 1998 .

Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems

N. Ledentsov, V. Ustinov, Z. Alferov, 1996 .

Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices

G. Medeiros-Ribeiro, J. Merz, N. Ledentsov, 1996 .

Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates

J. Merz, N. Ledentsov, V. Ustinov, 1996 .

Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface

V. A. Solov'ev, N. Ledentsov, M. Maksimov, 1999 .

Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

I. Krestnikov, N. Ledentsov, Y. Shernyakov, 2000 .

Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience?

N. Ledentsov, 2003 .

InAs‐GaAs quantum dots: From growth to lasers

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2002 .

Quantum Dot Devices and Computing

B. E. Kane, J. Lott, K. Malloy, 2002 .

Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices

N. Ledentsov, K. Ploog, N. Tsukada, 1992 .

Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

I. P. Soshnikov, N. Ledentsov, V. Ustinov, 2002 .

Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots

N. Ledentsov, M. Maksimov, A. Zhukov, 1997 .

Process of fabricating semiconductor microcavities and photon crystals

V. A. Solov'ev, N. Ledentsov, M. Maksimov, 2005 .

Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region

N. Ledentsov, M. Maksimov, A. Zhukov, 2006 .

VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS

N. Ledentsov, A. Zhukov, V. Ustinov, 2007 .

Luminescence properties of semiconductor quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1997 .

InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties

N. Ledentsov, A. Zhukov, V. Ustinov, 1995 .

Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

N. Ledentsov, Y. Shernyakov, A. Zhukov, 1999 .

Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors

N. Ledentsov, A. Zhukov, A. Kovsh, 2000 .

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

A. P. Vasil’ev, A. R. Kovsh, S. Mikhrin, 2004 .

Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates

A. P. Vasil’ev, N. Ledentsov, A. Gladyshev, 2003 .

Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping

N. Ledentsov, D. Bimberg, A. Tsatsul'nikov, 2001 .

MOCVD-grown AlGaN/GaN heterostructures with high electron mobility

N. M. Shmidt, N. Ledentsov, A. Gladyshev, 2004 .

A temperature-stable semiconductor laser based on coupled waveguides

N. Ledentsov, V. Shchukin, A. Payusov, 2011 .

Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix

N. V. Kryzhanovskaya, I. P. Soshnikov, N. Ledentsov, 2003 .

Entropy‐Driven Effects in Self‐Organized Formation of Quantum Dots

I. P. Soshnikov, N. Ledentsov, V. Ustinov, 2001 .

Self-organized growth of semiconductor nanostructures for novel light emitters

N. Ledentsov, V. Shchukin, D. Bimberg, 2000 .

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

A. R. Kovsh, I. Krestnikov, N. Ledentsov, 1999 .

Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

I. P. Soshnikov, N. Ledentsov, A. Zhukov, 1999 .

Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host

N. Ledentsov, M. Maksimov, A. Zhukov, 1999 .

Formation of self-organized quantum dots at semiconductor surfaces

N. Ledentsov, V. Shchukin, D. Bimberg, 1998 .

Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

N. Ledentsov, M. Maksimov, A. Zhukov, 1998 .

Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]

I. Krestnikov, N. Ledentsov, Z. Alferov, 1997 .

Ordered quantum-dot arrays in semiconducting matrices

N. Ledentsov, M. Maksimov, V. Ustinov, 1996 .

An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

N. Ledentsov, Z. Alferov, V. Shchukin, 1996 .

RESONANT EXCITON EFFECTS IN INAS MONOLAYER INSERTIONS IN A GAAS MATRIX

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces

N. Ledentsov, V. Ustinov, Z. Alferov, 1995 .

Size-selective optically excited capacitance transient spectroscopy of InAs=GaAs quantum dots

N. Ledentsov, V. Ustinov, D. Bimberg, 2002 .

High temperature laser diode based on a single sheet of quantum dots

N. Ledentsov, Y. Shernyakov, V. Shchukin, 2015 .

Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots

N. Ledentsov, M. Maksimov, Yu. G. Musikhin, 2000 .

Effect of the quantum-dot surface density in the active region on injection-laser characteristics

N. Ledentsov, M. Maksimov, Y. Shernyakov, 1998 .

Strain-induced formation and tuning of ordered nanostructures on crystal surfaces

N. Ledentsov, V. Shchukin, D. Bimberg, 1996 .

3D Arrays of Quantum Dots for Laser Applications

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Growth, characterizations, theory and lasing of vertically stacked quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

N. Ledentsov, M. Maksimov, V. Ustinov, 1995 .

Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

N. V. Kryzhanovskaya, O. M. Gorbenko, I. P. Soshnikov, 2004 .

Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

N. Ledentsov, Yu. G. Musikhin, A. Kovsh, 2001 .

Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

N. Ledentsov, A. Kovsh, V. Ustinov, 2000 .

RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots

N. Ledentsov, M. Maksimov, V. Ustinov, 2008 .

The impact of thermal effects on emission characteristics of asymmetrical AlGAO-waveguide microdisks based on quantum dots

N. Ledentsov, V. Ustinov, M. Kulagina, 2007 .

Ultrathin layers and short-period superlattices in semiconductor structures

N. Ledentsov, V. Ustinov, P. Kop’ev, 1990 .

Morphology evolution in strain-compensated multiple quantum well structures

N. Ledentsov, V. Shchukin, S. Rouvimov, 2014 .

Analysis of the local indium composition in ultrathin InGaN layers

S. O. Usov, N. Ledentsov, Yu. G. Musikhin, 2007 .

Quantum dot origin of luminescence in InGaN-GaN structures

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Transient-four-wave-mixing studies of GaAs micro-crystallites

N. Ledentsov, P. Kop’ev, S. Cundiff, 1994 .

High-power wavelength stabilized 970nm tilted cavity laser with a 41.3dB side mode suppression ratio

M. Kuntz, S. Mikhrin, N. Ledentsov, 2007 .

Overcoming gain saturation in InAs/GaAs quantum dot lasers

N. Ledentsov, A. Zhukov, V. Ustinov, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

N. Ledentsov, Z. Alferov, U. Gösele, 1995 .

Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy

N. K. Polyakov, N. Ledentsov, G. Cirlin, 1995 .

Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters

I. P. Soshnikov, N. Ledentsov, D. Gerthsen, 2005 .

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

S. Mikhrin, I. Krestnikov, N. Ledentsov, 2000 .

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

N. K. Polyakov, N. Ledentsov, V. Ustinov, 2000 .

Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction

N. Ledentsov, M. Maximov, 2005 .

GaSb quantum dot growth using InAs quantum dot stressors

N. Ledentsov, D. Bimberg, I. Häusler, 2003 .

The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm

N. K. Polyakov, N. Ledentsov, Yu. G. Musikhin, 2000 .

Quantum-dot injection heterolaser with 3.3 W output power

N. Ledentsov, M. Maksimov, A. Kovsh, 1999 .

MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 1999 .

Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm

N. Ledentsov, A. Zhukov, A. Kovsh, 1998 .

Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates

N. Ledentsov, M. Maksimov, A. Zhukov, 1998 .

Energy characteristics of excitons in structures based on InGaN alloys

S. O. Usov, N. Ledentsov, A. Tsatsul'nikov, 2008 .

Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies

N. Ledentsov, P. Castrillo, P. Wang, 1995 .

Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection"

John E. Bowers, Arthur C. Gossard, Dieter Bimberg, 1996 .

Thermodynamic analysis of segregation effects in MBE of AIII−BV compounds

N. Ledentsov, P. Kop’ev, S. Ivanov, 1991 .

Nonlinear Optical Studies of Microstructured GaAs/AlAs

N. Ledentsov, P. Kop’ev, S. Cundiff, 1994 .

Size quantization by faceting in (110)‐oriented GaAs/AlAs heterostructures

N. Ledentsov, R. Nötzel, K. Ploog, 1992 .

Long-wavelength lasers based on metamorphic quantum dots

N. Ledentsov, A. Zhukov, A. Kovsh, 2005 .

APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS

J. Lott, N. Ledentsov, V. Ustinov, 2002 .

Long-Wavelength InGaAs/GaAs Quantum Dot Lasers

N. Ledentsov, 2002 .

Inas Nanostructures in a Silicon Matrix: Growth and Properties

N. K. Polyakov, N. Ledentsov, V. Ustinov, 1999 .

Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Optical properties of InAlAs quantum dots in an AlGaAs matrix

A. R. Kovsh, N. Ledentsov, A. Zhukov, 1998 .

Thermal stability of vertically coupled InAs-GaAs quantum dot arrays

N. Ledentsov, M. Maksimov, A. Zhukov, 1997 .

STM and RHEED study of InAsGaAs quantum dots obtained by submonolayer epitaxial techniques

G. E. Cirlin, N. K. Polyakov, N. Ledentsov, 1996 .

Photoluminescence of localized excitons in InGan quantum dots

S. O. Usov, N. Ledentsov, A. Tsatsul'nikov, 2008 .

v Accelerated Online Publication LASERS, OPTICS, AND OPTOELECTRONICS 2971 Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures

N. Ledentsov, W. Barnes, L. Lanco, 2004 .

3.5 W continuous wave operation from quantum dot laser

N. Ledentsov, A. Zhukov, A. Kovsh, 2000 .

Self-Organization Phenomena at Crystal Surfaces

N. Ledentsov, V. Shchukin, D. Bimberg, 2004 .

Photoluminescence of InSb quantum dots in GaAs and GaSb matrices

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

N. Ledentsov, M. Maksimov, A. Zhukov, 2004 .

Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

Nikolai N. Ledentsov, Dieter Bimberg, G. E. Cirlin, 1995 .

Growth and Characterization Techniques

N. Ledentsov, V. Shchukin, D. Bimberg, 2004 .

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2000 .

Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

N. Ledentsov, M. Maksimov, Yu. G. Musikhin, 2003 .

Quantum dot lasers: Theory and experiment

J. Lott, N. Ledentsov, A. Zhukov, 2001 .

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Gain to absorption conversion by increasing excitation density in excitonic waveguides

N. Ledentsov, M. Strassburg, D. Bimberg, 1998 .

Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

I. Krestnikov, N. Ledentsov, P. Kop’ev, 1997 .

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1996 .

Entropy Effects in the Self-Organized Formation of Nanostructures

N. Ledentsov, V. Shchukin, D. Bimberg, 2002 .

Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Devices Based on Epitaxial Nanostructures

N. Ledentsov, V. Shchukin, D. Bimberg, 2004 .

Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

Nikolai N. Ledentsov, Vitaly A. Shchukin, Sergei V. Zaitsev, 1996 .

CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1998 .

Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix

N. Ledentsov, M. Maksimov, A. Zhukov, 1999 .

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Dieter Bimberg, N. N. Ledentsov, Marius Grundmann, 2001 .

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Nikolai N. Ledentsov, Mikhail V. Maximov, Dieter Bimberg, 2000 .

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

Guillaume Huyet, Nikolai N. Ledentsov, D. Bimberg, 2004 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

QD lasers: physics and applications

Matthias Kuntz, Friedhelm Hopfer, P. Werner, 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Second harmonic spectroscopy of semiconductor nanostructures

N. Ledentsov, S. Bozhevolnyi, J. Erland, 1999 .

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

T. Kettler, K. Posilovic, D. Bimberg, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications

N. N. Ledentsov, N. Yu. Gordeev, M. V. Maximov, 2008, SPIE OPTO.

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Nikolai N. Ledentsov, Dieter Bimberg, M. V. Maximov, 2000 .

Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1–xAs Quantum Well

A. R. Kovsh, N. Ledentsov, V. Ustinov, 2001 .

An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix

I. Krestnikov, N. Ledentsov, M. Maksimov, 1996 .

Optical properties of InAs quantum dots in a Si matrix

I. P. Soshnikov, N. Ledentsov, A. Zhukov, 1999 .

Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/AlxGa1−xAs multiple quantum wells

N. Ledentsov, R. Nötzel, K. Ploog, 1992 .

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 1998 .

Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces

N. Ledentsov, R. Nötzel, K. Ploog, 1992 .

Optical anisotropy in vertically coupled quantum dots

Nikolai N. Ledentsov, Wolfgang Werner Langbein, Dieter Bimberg, 1999 .

Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

D. Bimberg, Wolfgang Werner Langbein, N. N. Ledentsov, 2001 .

InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

Mikhail V. Maximov, A. R. Kovsh, James A. Lott, 2000 .

Optical orientation and alignment of excitons in quantum dots

V. L. Korenev, B. P. Zakharchenya, N. N. Ledentsov, 1998 .

Prevention of gain saturation by multi-layer quantum dot lasers

Nikolai N. Ledentsov, Mikhail V. Maximov, Victor M. Ustinov, 1996 .

Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers

Sergei V. Zaitsev, John H. Marsh, D. Bhattacharyya, 1999 .

New-generation vertically emitting lasers as a key factor in the computer communication era

N. Ledentsov, J. A. Lott, 2011 .

Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays

N. Ledentsov, G. Slepyan, S. Maksimenko, 2001 .

Novel concepts for injection lasers

Nikolai N. Ledentsov, Vitaly A. Shchukin, N. Ledentsov, 2002 .

Lateral-cavity spectral hole burning in quantum-dot lasers

Dieter Bimberg, N. N. Ledentsov, Roman Sellin, 2002 .

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 1997 .

Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

N. Ledentsov, Yu. G. Musikhin, D. Sizov, 2007 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2001 .

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Nikolai N. Ledentsov, Igor L. Krestnikov, D. Bimberg, 2001 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Investigation of MOVPE-grown GaN layers doped with As atoms

N. Ledentsov, M. Maksimov, A. Hoffmann, 1999 .

Self-organized quantum wires and dots: New opportunities for device applications

N. Ledentsov, 1997 .

Interplay of beryllium segregation and diffusion in heavily doped GaAs and AlGaAs grown by molecular beam epitaxy (thermodynamic analysis)

N. Ledentsov, P. Kop’ev, S. Ivanov, 1991 .

Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces

V. V. Preobrazhenski, I. P. Soshnikov, N. Ledentsov, 2002 .

Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (31 January, 2001)

J. Lott, A. R. Kovsh, I. Krestnikov, 2001 .

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

V. A. Semenov, I. P. Soshnikov, I. Krestnikov, 1999 .

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

CONFERENCES AND SYMPOSIA: The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

N. Ledentsov, Y. Shernyakov, V. Ustinov, 1999 .

Spontaneous ordering of semiconductor nanostructures

N. Ledentsov, V. Shchukin, D. Bimberg, 1997 .

CONFERENCES AND SYMPOSIA: Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (January 29, 1997)

N. Ledentsov, V. Shchukin, V. Kulakovskii, 1997 .

Strained-submonolayer and quantum-dot superstructures

N. Ledentsov, D. Bimberg, A. Egorov, 1995 .

Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field

J. M. Chamberlain, N. Ledentsov, A. Zhukov, 2000 .

Miniband transport in a semiconductor superlattice with submonolayer barriers

N. Ledentsov, A. Zhukov, A. Kovsh, 1999 .

Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2006 .

Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 2006 .

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

N. Ledentsov, V. Shchukin, Y. Shernyakov, 2005, IEEE Journal of Quantum Electronics.

High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern

Mikhail V. Maximov, N. N. Ledentsov, Vladimir Kalosha, 2005 .

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

A. G. Kuzmenkov, A. P. Vasil’ev, N. Ledentsov, 2018 .

Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers

James A. Lott, N. N. Ledentsov, A. G. Kuzmenkov, 2013 .

Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

D. Bimberg, N. Ledentsov, M. Maksimov, 2012 .

Matrices of 960-nm vertical-cavity surface-emitting lasers

A. G. Kuzmenkov, A. S. Shulenkov, J. Lott, 2011 .

Oxide confined 850-nm VCSELs for high-speed datacom applications

Nikolai N. Ledentsov, Alex Mutig, Gerrit Fiol, 2010, Photonics Europe.

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

D. Bimberg, F. Hopfer, A. Mutig, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Friedhelm Hopfer, Dieter Bimberg, Nikolai N. Ledentsov, 2007, Proceedings of the IEEE.

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2006, Workshop on Optical Components for Broadband Communication.

56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s

Hui Li, James A. Lott, Philip Moser, 2012 .

81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

P. Moser, P. Wolf, G. Larisch, 2011 .

Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers

Alex Mutig, Gerrit Fiol, James A. Lott, 2009 .

3.5 W CW operation of quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 1999 .

Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 2001 .

120°C 20 Gbit/s operation of 980 nm VCSEL

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2008 .

Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

N. Ledentsov, D. Bimberg, I. Kaiander, 2004 .

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 1999 .

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

N. Ledentsov, Y. Shernyakov, A. Zhukov, 2018, Optics express.

Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm

J. Merz, N. Ledentsov, Y. Shernyakov, 2000 .

HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM

A. P. Vasil’ev, N. Ledentsov, A. Gladyshev, 2007 .

Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers

A. P. Vasil’ev, N. Ledentsov, M. Maksimov, 2005 .

Structural and optical properties of InAs quantum dots in AlGaAs matrix

N. K. Polyakov, A. P. Vasil’ev, S. Mikhrin, 2003 .

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation

N. Ledentsov, A. Gladyshev, A. Zhukov, 2006 .

Effect of growth conditions on InAs nanoislands formation on Si(100) surface

N. K. Polyakov, N. Ledentsov, Z. Alferov, 1999 .

Resonant Raman scattering studies of multilayer (In, Ga, Al) (As, Sb) heterostructures with InAs quantum wells

N. Ledentsov, P. Wang, P. Kop’ev, 1994 .

Wavelength-stabilized tilted cavity quantum dot laser

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 2004 .

Optical anisotropy of InGaAs quantum dots

G. E. Cirlin, A. P. Vasil’ev, N. Ledentsov, 2013 .

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

D. Bimberg, N. Ledentsov, Z. Alferov, 2008, Journal of Lightwave Technology.

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering

Nikolai N. Ledentsov, D. Bimberg, N. Ledentsov, 2003 .

High-power long-wavelength lasers using GaAs-based quantum dots

Victor M. Ustinov, Nikolai Ledentsov, James A. Lott, 2001, SPIE OPTO.

Novel infrared quantum dot lasers : Theory and reality

Nikolai N. Ledentsov, James A. Lott, Dieter Bimberg, 2001 .

Light confinement in a quantum dot

Nikolai N. Ledentsov, Dieter Bimberg, Sergey A. Maksimenko, 2000 .

Electromagnetic response of 3D arrays of quantum dots

N. Ledentsov, Z. Alferov, G. Slepyan, 2000 .

Gain characteristics of quantum-dot injection lasers

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

A. R. Kovsh, N. Ledentsov, M. Maksimov, 1998 .

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

D. Bimberg, N. N. Ledentsov, M. V. Maximov, 1998 .

Vertical cavity surface emitting lasers based on vertically coupled quantum dots

J. Lott, N. Ledentsov, A. Zhukov, 1997, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.

Vertical cavity lasers based on vertically coupled quantum dots

James A. Lott, Dieter Bimberg, N. N. Ledentsov, 1997 .

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser

Nikolai N. Ledentsov, Mikhail V. Maximov, James A. Lott, 1999 .

Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix

N. Ledentsov, M. Maksimov, A. Zhukov, 1997 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

Intrinsic luminescence in GaAs/AlAs ultrathin-layer superlattices

N. Ledentsov, K. Ploog, N. Tsukada, 1992 .

Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Light-exciton coupling in semiconductor microcavities of cylindrical and spherical symmetry

V. V. Nikolaev, N. Ledentsov, M. Maximov, 2001 .

Exciton resonance reflection from quantum well, quantum wire and quantum dot structures

N. Ledentsov, A. Kavokin, E. Ivchenko, 1992 .

Heterostructure for UV LEDs Based on Thick AlGaN Layers

N. Ledentsov, A. Lunev, Y. Kudriavtsev, 1998 .

Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics

Dieter Bimberg, D. Gerthsen, Nikolai N. Ledentsov, 2002, SPIE OPTO.

InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1995 .

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode

S. Mikhrin, N. Ledentsov, A. Kovsh, 2006 .

Tilted cavity laser (Critical Review Lecture)

Mikhail V. Maximov, Igor L. Krestnikov, Vitaly Shchukin, 2004, SPIE Optics + Photonics.

Long-wavelength lasers using GaAs-based quantum dots

Nikolai N. Ledentsov, Vitaly A. Shchukin, N. Ledentsov, 2002, SPIE Defense + Commercial Sensing.

Response to Comment: ‘‘Comment on ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces’ ’’ [Appl. Phys. Lett. 66, 111 (1995)]

N. Ledentsov, V. Ustinov, P. Wang, 1995 .

Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces

N. N. Ledentsov, V. M. Ustinov, P. S. Kop'ev, 1994 .

OPTOELECTRONIC DEVICES BASED ON QUANTUM DOTS

Z. Mi, P. Bhattacharya, N. Ledentsov, 2007 .

Thermodynamic analysis of segregation effects in molecular beam epitaxy

N. Ledentsov, P. Kop’ev, S. Ivanov, 1990 .

Midinfrared emission from near-infrared quantum-dot lasers

N. N. Ledentsov, Marius Grundmann, A. E. Zhukov, 2000 .

Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots

N. N. Ledentsov, Yu. M. Shernyakov, V. M. Ustinov, 1998 .

Temperature characteristics of tilted wave lasers

N. Ledentsov, Y. Shernyakov, A. Zhukov, 2016 .

High-Speed DMT and VCSEL-Based MMF Transmission Using Pre-Distortion

Mikel Agustin, Volker Jungnickel, Christoph Kottke, 2018, Journal of Lightwave Technology.

Radiative Inter‐Sublevel Transitions in InGaAs/AlGaAs Quantum Dots

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 2001 .

15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers

A. G. Kuzmenkov, J. Lott, N. Ledentsov, 2010, 22nd IEEE International Semiconductor Laser Conference.

120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

M. Kuntz, S. Mikhrin, I. Krestnikov, 2008, 2008 IEEE 21st International Semiconductor Laser Conference.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

A. P. Vasil’ev, S. Mikhrin, N. Ledentsov, 2003 .

20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

M. Kuntz, S. Mikhrin, I. Krestnikov, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

Hot carrier relaxation in InAs/GaAs quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Fine structure of excitonic levels in quantum dots

V. L. Korenev, B. P. Zakharchenya, N. Ledentsov, 1997 .

Spontaneous formation of nanostructures on crystal surfaces

N. Ledentsov, V. Shchukin, D. Bimberg, 2001 .

Semiconductor quantum dot lasers

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2005, Other Conferences.

Formation of InAs quantum dots on a silicon (100) surface

G. E. Cirlin, N. K. Polyakov, O. M. Gorbenko, 1998 .

Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Optical and Structural Properties of Quantum Dots in Wide‐Bandgap Semiconductors

I. Krestnikov, N. Ledentsov, M. Strassburg, 2001 .

Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE

A. P. Vasil’ev, N. Ledentsov, M. Maksimov, 2003 .

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

G. E. Cirlin, N. Ledentsov, Yu. G. Musikhin, 2001 .

Time‐Resolved Studies of InGaN/GaN Quantum Dots

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Room temperature yellow InGaAlP quantum dot laser

N. Ledentsov, A. Zhukov, V. Shchukin, 2019, Solid-State Electronics.

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

Nikolai Ledentsov, J.-R. Kropp, N. N. Ledentsov, 2019, Solid-State Electronics.

Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2016, SPIE LASE.

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Nikolai N. Ledentsov, Mikhail V. Maximov, Axel Hoffmann, 2014, Photonics West - Optoelectronic Materials and Devices.

Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots

Dieter Bimberg, N. N. Ledentsov, Andreas Rosenauer, 1999 .

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Heteroepitaxial growth of InAs on Si: A new type of quantum dot

N. K. Polyakov, N. Ledentsov, A. Zhukov, 1999 .

Lateral association of vertically-coupled quantum dots

I. Krestnikov, N. Ledentsov, A. Zhukov, 1998 .

Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots

N. Ledentsov, A. Zhukov, A. Kovsh, 1998 .

Decay dynamics of excitonic polarons in InAs/GaAs quantum dots

M. R. Wagner, C. Thomsen, N. Ledentsov, 2011 .

Magneto-optical properties in ultrathin InAs-GaAs quantum wells.

Wang, N. Ledentsov, P. Wang, 1994, Physical review. B, Condensed matter.

Formation of coherent superdots using metal‐organic chemical vapor deposition

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 1996 .

Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.

N. Ledentsov, V. Ustinov, N. Cherkashin, 2001 .

Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

N. Ledentsov, M. Maksimov, Y. Shernyakov, 1998 .

InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Tilted Wave Lasers: A Way to High Brightness Sources of Light

D Bimberg, D. Bimberg, N. Ledentsov, 2011, IEEE Journal of Quantum Electronics.

Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells

N. Ledentsov, Y. Shernyakov, A. Zhukov, 2001 .

Optical processes in quantum dots and wires

Peidong D. Wang, Cliva M. Sotomayor-Torres, Nikolai N. Ledentsov, 1994, Photonics West - Lasers and Applications in Science and Engineering.

Structural and optical properties of InAlN/GaN distributed Bragg reflectors

S. O. Usov, N. Ledentsov, A. Tsatsul'nikov, 2010 .

High Speed VCSEL: Technology and Applications

J. P. Turkiewicz, N. Ledentsov, O. Makarov, 2021 .

Energy characteristics of excitons in InGaN/GaN heterostructures

N. N. Ledentsov, S. O. Usov, A. F. Tsatsul'nikov, 2008, SPIE Photonics Europe.

Spontaneous ordering of arrays of coherent strained islands.

N. Ledentsov, V. Shchukin, D. Bimberg, 1995, Physical review letters.

High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Mikhail V. Maximov, A. R. Kovsh, N. N. Ledentsov, 2005 .

Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼ 1.3 mm

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

Large Spectral Splitting of TE and TM Components of QDs in a Microcavity

I. Krestnikov, N. Ledentsov, V. Ustinov, 2001 .

Self-Assembled Formation of Quantum Dots During InGaAlAs Quantum Well Growth

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 1998 .

POLARIZATION SPLITTING OF THE GAIN BAND IN QUANTUM WIRE AND QUANTUM DOT ARRAYS

Nikolai N. Ledentsov, Igor L. Krestnikov, Dieter Bimberg, 1999 .

Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2003 .

Quantum dots heterostructure lasers: state of the art and future prospects

Zhores I. Alferov, Nikolai N. Ledentsov, N. Ledentsov, 1999, Photonics West.

Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

A. P. Vasil’ev, A. S. Shulenkov, N. Ledentsov, 2003 .

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

Egorov, Zhukov, Alferov, 1996, Physical review. B, Condensed matter.

Dynamics of doubly resonant Raman scattering and resonant luminiscence in ultrathin InAs/GaAs quantum wells

Jem Jos Haverkort, N. Ledentsov, A. Zhukov, 1996 .

Exciton Dynamics in Ultrathin InAs/GaAs Quantum-Wells

N. Ledentsov, P. Wang, J. Wolter, 1995 .

Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlattice

N. Ledentsov, V. Ustinov, M. Kulagina, 2015 .

Long-wavelength quantum dot lasers on GaAs substrates

J. Lott, S. Mikhrin, N. Ledentsov, 2000 .

Structural characterization of (In,Ga)As quantum dots in a GaAs matrix.

Egorov, Alferov, Werner, 1995, Physical review. B, Condensed matter.