N. Maleev

发表

High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

N. V. Kryzhanovskaya, A. P. Vasil’ev, S. Mikhrin, 2004 .

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

A. R. Kovsh, I. Krestnikov, N. Ledentsov, 1999 .

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 1999 .

Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates

A. R. Kovsh, N. N. Ledentsov, Yu. M. Shernyakov, 1999 .

Temperature dependence of the radiation power emitted by a superlattice subject to a high-frequency electric field

A. Zhukov, N. Maleev, V. Ustinov, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Quantum dot semiconductor disk laser at 1.3 μm.

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2015, Optics letters.

Quantum dot VCSELs

A. Zhukov, A. Kovsh, N. Maleev, 2005 .

Broadly tunable dual-wavelength InAs/GaAs quantum-dot laser for THz generation

N. Maleev, V. Ustinov, E. Rafailov, 2016, 2016 International Conference Laser Optics (LO).

Quantum-dot edge-emitting lasers

A. Zhukov, N. Maleev, V. Ustinov, 2003 .

Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers

A. P. Vasil’ev, A. Gladyshev, N. Maleev, 2011 .

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2007 .

High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

N. Maleev, H. Kuo, S. Blokhin, 2007, IEEE Journal of Selected Topics in Quantum Electronics.

Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

N. Maleev, H. Kuo, Hung-Pin D. Yang, 2007 .

Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

S. C. Wang, N. Maleev, H. Kuo, 2006 .

Detection of terahertz radiation by array of integrated field-effect transistors with floating electrodes

N. Maleev, V. Ustinov, I. Khmyrova, 2016, 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.

Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors

M. Shur, N. Maleev, V. Ustinov, 2015 .

Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors

N. Maleev, V. Gavrilenko, V. Popov, 2014 .

Mechanism of the polarization control in intracavity- contacted VCSEL with rhomboidal oxide current aperture

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2016 .

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

A. G. Kuzmenkov, M. A. Bobrov, P. Moser, 2015 .

Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2006 .

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2001 .

Radiation-induced surface degradation of GaAs and high electron mobility transistor structures

V. V. Milenin, N. Maleev, V. Ustinov, 2012 .

An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures

Yu. G. Musikhin, N. Maleev, V. Ustinov, 2006 .

Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band.

A. G. Kuzmenkov, A. P. Vasil’ev, M. A. Bobrov, 2021, Optics express.

Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates

A. P. Vasil’ev, N. Ledentsov, A. Zhukov, 2001 .

Vertical-cavity emitting devices with quantum-dot structures

J. Lott, A. R. Kovsh, N. Ledentsov, 2001 .

The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

A. P. Vasil’ev, M. A. Bobrov, N. Ledentsov, 2018 .

Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen

S. Mikhrin, A. Zhukov, A. Kovsh, 2002 .

Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature

A. P. Vasil’ev, A. A. Usikova, N. Maleev, 2018, Technical Physics Letters.

On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers

N. Maleev, V. Ustinov, A. Sofronov, 2018, Semiconductors.

Investigation of the Modified Structure of a Quantum Cascade Laser

A. A. Usikova, Y. Shernyakov, N. Maleev, 2018 .

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

S. Mikhrin, I. Krestnikov, N. Ledentsov, 2000 .

Collapsing-field-domain-based 200 GHz solid-state source

N. Maleev, J. Kostamovaara, S. Vainshtein, 2019, Applied Physics Letters.

Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

A. R. Kovsh, Gray Lin, Daniil A. Livshits, 2003 .

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

Semiconductor–superlattice frequency multiplier for generation of submillimeter waves

A. Zhukov, N. Maleev, V. Ustinov, 2004 .

Towards Bright Single-Photon Emission in Elliptical Micropillars

N. Maleev, E. Nikitina, M. Kulagina, 2023, Nanomaterials.

Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

D. Bimberg, N. Ledentsov, M. Maksimov, 2012 .

Matrices of 960-nm vertical-cavity surface-emitting lasers

A. G. Kuzmenkov, A. S. Shulenkov, J. Lott, 2011 .

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation

N. Ledentsov, A. Gladyshev, A. Zhukov, 2006 .

Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate

V. I. Gavrilenko, V. V. Popov, D. V. Fateev, 2010 .

Optical anisotropy of InGaAs quantum dots

G. E. Cirlin, A. P. Vasil’ev, N. Ledentsov, 2013 .

15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers

A. G. Kuzmenkov, J. Lott, N. Ledentsov, 2010, 22nd IEEE International Semiconductor Laser Conference.

Semiconductor quantum dot lasers

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2005, Other Conferences.

Characteristics of Broad-Area InGaAs Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Hao-Chung Kuo, Gray Lin, Nikolai A. Maleev, 2007 .

An array of integrated on a chip GaAs/InGaAs/AlGaAs-field-effect transistors with floating electrodes for detection of terahertz radiation

N. Maleev, V. Ustinov, I. Khmyrova, 2015, 2015 International Topical Meeting on Microwave Photonics (MWP).

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

A. G. Kuzmenkov, A. Gladyshev, N. Maleev, 2011 .

Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators

A. P. Vasil’ev, A. Gladyshev, N. Maleev, 2014 .

Semiconductor superlattice frequency multiplier for the submillimeter wavelength range

B. I. Stahl, A. Zhukov, N. Maleev, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers

A. P. Vasil’ev, A. S. Shulenkov, M. Maksimov, 2005 .

Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

A. P. Vasil’ev, A. S. Shulenkov, N. Ledentsov, 2003 .

Terahertz detection in a slit-grating-gate field-effect-transistor structure

N. Maleev, S. Shapoval, V. Gavrilenko, 2011, 1110.1797.