Z. Alferov

J. Lott, N. Ledentsov, V. Ustinov, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Semiconductor quantum dots for application in diode lasers

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Edge and surface emitting quantum dot lasers

J. Lott, N. Ledentsov, V. Ustinov, 1997, International Electron Devices Meeting. IEDM Technical Digest.

16 W continuous-wave output power from 100 [micro sign]m-aperture laser with quantum well asymmetric heterostructure

Nikita A. Pikhtin, Ilya S. Tarasov, S. O. Slipchenko, 2004 .

Quantum dots formed by ultrathin insertions in wide-gap matrices

I. Krestnikov, N. Ledentsov, Z. Alferov, 2000 .

Structural characterization of self-organized nanostructures

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties

G. E. Cirlin, N. K. Polyakov, N. Ledentsov, 2001 .

Lasing at 1.5 µm in quantum dot structures on GaAs substrates

N. V. Kryjanovskaya, S. Mikhrin, N. Ledentsov, 2003 .

Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems

N. Ledentsov, V. Ustinov, Z. Alferov, 1996 .

Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

I. Krestnikov, N. Ledentsov, Y. Shernyakov, 2000 .

InAs‐GaAs quantum dots: From growth to lasers

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2002 .

Luminescence properties of semiconductor quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1997 .

InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties

N. Ledentsov, A. Zhukov, V. Ustinov, 1995 .

Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

N. Ledentsov, Y. Shernyakov, A. Zhukov, 1999 .

Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors

N. Ledentsov, A. Zhukov, A. Kovsh, 2000 .

Topical Meeting on Optical Computing

Joseph W. Goodman, Zhores I. Alferov, J. Goodman, 1992 .

MOCVD-grown AlGaN/GaN heterostructures with high electron mobility

N. M. Shmidt, N. Ledentsov, A. Gladyshev, 2004 .

Photodetectors and solar cells

Z. Alferov, Zh. I. Alferov, Iu. V. Shmartsev, 1986 .

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

A. R. Kovsh, I. Krestnikov, N. Ledentsov, 1999 .

Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

I. P. Soshnikov, N. Ledentsov, A. Zhukov, 1999 .

Formation of InSb quantum dots in a GaSb matrix

N. Ledentsov, Z. Alferov, M. Maximov, 1998 .

Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

N. Ledentsov, M. Maksimov, A. Zhukov, 1998 .

Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]

I. Krestnikov, N. Ledentsov, Z. Alferov, 1997 .

Ordered quantum-dot arrays in semiconducting matrices

N. Ledentsov, M. Maksimov, V. Ustinov, 1996 .

An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

N. Ledentsov, Z. Alferov, V. Shchukin, 1996 .

Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces

N. Ledentsov, V. Ustinov, Z. Alferov, 1995 .

Blue-green ZnSe lasers with a new type of active region

Z. Alferov, G. Reuscher, A. Waag, 1999 .

CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

Z. Alferov, G. Reuscher, A. Waag, 1999 .

Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots

N. Ledentsov, M. Maksimov, Yu. G. Musikhin, 2000 .

Effect of the quantum-dot surface density in the active region on injection-laser characteristics

N. Ledentsov, M. Maksimov, Y. Shernyakov, 1998 .

3D Arrays of Quantum Dots for Laser Applications

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Growth, characterizations, theory and lasing of vertically stacked quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

N. Ledentsov, M. Maksimov, V. Ustinov, 1995 .

Heterostructure lasers: development of new physics and new technology

Z. Alferov, 2001 .

Classical heterostructures paved the way

Z. Alferov, 1998 .

The semiconductor revolution in the 20th century

Z. Alferov, 2013 .

Preparation of AlGaPAs heterostructures

Z. Alferov, S. Konnikov, V. Larionov, 1975 .

RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

V. A. Solov'ev, Ya. V. Terent’ev, Z. Alferov, 2003 .

Radioactive (90Y) upconversion nanoparticles conjugated with recombinant targeted toxin for synergistic nanotheranostics of cancer

Z. Alferov, S. Ermilov, A. Zvyagin, 2018, Proceedings of the National Academy of Sciences.

Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy

Z. Alferov, A. Syrbu, V. Yakovlev, 1990 .

DEVICES CHARACTERISTICS OF LOW-THRESHOLD QUANTUM-DOT LASERS

A. Zhukov, V. Ustinov, Z. Alferov, 1998 .

Quantum dot origin of luminescence in InGaN-GaN structures

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Overcoming gain saturation in InAs/GaAs quantum dot lasers

N. Ledentsov, A. Zhukov, V. Ustinov, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

N. Ledentsov, Z. Alferov, U. Gösele, 1995 .

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

S. Mikhrin, I. Krestnikov, N. Ledentsov, 2000 .

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

N. K. Polyakov, N. Ledentsov, V. Ustinov, 2000 .

Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

Z. Alferov, G. Reuscher, A. Waag, 1998 .

Investigation of a new LPE method of obtaining AlGaAs heterostructures

Z. Alferov, S. Konnikov, V. Larionov, 1976 .

Quantum-dot injection heterolaser with 3.3 W output power

N. Ledentsov, M. Maksimov, A. Kovsh, 1999 .

MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 1999 .

Quantum wells and superlattices come of age

Z. Alferov, A. Ioffe, 1997 .

Long-wavelength lasers based on metamorphic quantum dots

N. Ledentsov, A. Zhukov, A. Kovsh, 2005 .

APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS

J. Lott, N. Ledentsov, V. Ustinov, 2002 .

Inas Nanostructures in a Silicon Matrix: Growth and Properties

G. E. Cirlin, N. K. Polyakov, N. Ledentsov, 1999 .

Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Optical properties of InAlAs quantum dots in an AlGaAs matrix

A. R. Kovsh, N. Ledentsov, A. Zhukov, 1998 .

Thermal stability of vertically coupled InAs-GaAs quantum dot arrays

N. Ledentsov, M. Maksimov, A. Zhukov, 1997 .

STM and RHEED study of InAsGaAs quantum dots obtained by submonolayer epitaxial techniques

G. E. Cirlin, N. K. Polyakov, N. Ledentsov, 1996 .

3.5 W continuous wave operation from quantum dot laser

N. Ledentsov, A. Zhukov, A. Kovsh, 2000 .

Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

G. E. Cirlin, A. Zhukov, Z. Alferov, 2017 .

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

A. Zhukov, Z. Alferov, R. Khabibullin, 2016 .

Photoluminescence of InSb quantum dots in GaAs and GaSb matrices

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

Double heterostructure lasers: early days and future perspectives

Z. Alferov, Z. Alferov, 2000, IEEE Journal of Selected Topics in Quantum Electronics.

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2000 .

Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

The history and future of semiconductor heterostructures

Z. Alferov, Zh. I. Alferov, 1998 .

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

N. Ledentsov, M. Maksimov, Yu. G. Musikhin, 2003 .

Quantum dot lasers: Theory and experiment

J. Lott, N. Ledentsov, A. Zhukov, 2001 .

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

I. Krestnikov, Z. Alferov, D. Gerthsen, 1999 .

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1996 .

ZnSe-based blue-green lasers with a short-period superlattice waveguide

Franz Dieter Fischer, G. Landwehr, Andreas Waag, 1998 .

Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

Nikolai N. Ledentsov, Vitaly A. Shchukin, Sergei V. Zaitsev, 1996 .

CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1998 .

The history and future of semiconductor heterostructures from the point of view of a Russian scientist

Z. Alferov, Zh. I. Alferov, 1996 .

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Nikolai N. Ledentsov, Mikhail V. Maximov, Dieter Bimberg, 2000 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 2001 .

Quantum wires and dots show the way forward

Z. Alferov, A. Ioffe, 1998 .

The double heterostructure: the concept and its applications in physics, electronics, and technology (Nobel lecture).

Z. Alferov, Z I Alferov, 2001, Chemphyschem : a European journal of chemical physics and physical chemistry.

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Nikolai N. Ledentsov, Dieter Bimberg, M. V. Maximov, 2000 .

An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix

I. Krestnikov, N. Ledentsov, M. Maksimov, 1996 .

Optical properties of InAs quantum dots in a Si matrix

G. E. Cirlin, I. P. Soshnikov, N. Ledentsov, 1999 .

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 1998 .

Three-dimensional arrays of self-ordered quantum dots for laser applications

N. Ledentsov, V. Ustinov, Z. Alferov, 1997 .

Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

D. Bimberg, Wolfgang Werner Langbein, N. N. Ledentsov, 2001 .

InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

Mikhail V. Maximov, A. R. Kovsh, James A. Lott, 2000 .

InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Prevention of gain saturation by multi-layer quantum dot lasers

Nikolai N. Ledentsov, Mikhail V. Maximov, Victor M. Ustinov, 1996 .

Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers

Sergei V. Zaitsev, John H. Marsh, D. Bhattacharyya, 1999 .

Heterostructures for Optoelectronics: History and Modern Trends

Zhores Alferov, Z. Alferov, 2013, Proceedings of the IEEE.

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 1997 .

Optical phase shift measurement of residual defects in vapor epitaxial GaAsP

Z. Alferov, N. Holonyak, R. Dupuis, 1971 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2001 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

High power CW operation of InGaAsN lasers at 1.3 [micro sign]m

Daniil A. Livshits, V. M. Ustinov, D. Bernklau, 1999 .

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

D. Bimberg, D. Gerthsen, I. P. Soshnikov, 2001 .

Solar-energy converters based on p-n AlxGal-x As-GaAs heterojunctions

V. M. Andreev, Z. Alferov, M. Kagan, 1971 .

Electronic Structure of GaAs1–xNx Alloy by Soft-X-Ray Absorption and Emission: Origin of the Reduced Optical Efficiency

V. Ustinov, Z. Alferov, T. Schmitt, 2002, cond-mat/0207738.

Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (31 January, 2001)

J. Lott, A. R. Kovsh, I. Krestnikov, 2001 .

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

V. A. Semenov, I. P. Soshnikov, I. Krestnikov, 1999 .

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

CONFERENCES AND SYMPOSIA: The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

N. Ledentsov, Y. Shernyakov, V. Ustinov, 1999 .

Semiconductor Devices with Heterojunctions

Z. Alferov, 1973 .

Miniband transport in a semiconductor superlattice with submonolayer barriers

N. Ledentsov, A. Zhukov, A. Kovsh, 1999 .

Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Z. Alferov, D. Bimberg, V. Khalfin, 1994 .

Solar photovoltaics: Trends and prospects

Valery D. Rumyantsev, V. M. Andreev, Z. Alferov, 2004 .

THE DOUBLE HETEROSTRUCTURE: CONCEPT AND ITS APPLICATIONS IN PHYSICS, ELECTRONICS AND TECHNOLOGY

Z. Alferov, 2002 .

Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures

Nikita A. Pikhtin, Ilya S. Tarasov, S. O. Slipchenko, 2004 .

3.5 W CW operation of quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 1999 .

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 1999 .

Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm

J. Merz, N. Ledentsov, Y. Shernyakov, 2000 .

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Effect of growth conditions on InAs nanoislands formation on Si(100) surface

N. K. Polyakov, N. Ledentsov, Z. Alferov, 1999 .

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

D. Bimberg, N. Ledentsov, Z. Alferov, 2008, Journal of Lightwave Technology.

High-power long-wavelength lasers using GaAs-based quantum dots

Victor M. Ustinov, Nikolai Ledentsov, James A. Lott, 2001, SPIE OPTO.

Novel infrared quantum dot lasers : Theory and reality

Nikolai N. Ledentsov, James A. Lott, Dieter Bimberg, 2001 .

Electromagnetic response of 3D arrays of quantum dots

N. Ledentsov, Z. Alferov, G. Slepyan, 2000 .

Gain characteristics of quantum-dot injection lasers

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

A. R. Kovsh, N. Ledentsov, M. Maksimov, 1998 .

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

D. Bimberg, N. N. Ledentsov, M. V. Maximov, 1998 .

Vertical cavity surface emitting lasers based on vertically coupled quantum dots

J. Lott, N. Ledentsov, A. Zhukov, 1997, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.

Vertical cavity lasers based on vertically coupled quantum dots

James A. Lott, Dieter Bimberg, N. N. Ledentsov, 1997 .

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser

Nikolai N. Ledentsov, Mikhail V. Maximov, James A. Lott, 1999 .

Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix

N. Ledentsov, M. Maksimov, A. Zhukov, 1997 .

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Nikolai N. Ledentsov, Victor M. Ustinov, James A. Lott, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

I. Krestnikov, N. Ledentsov, M. Maksimov, 1997 .

InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1995 .

Midinfrared emission from near-infrared quantum-dot lasers

N. N. Ledentsov, Marius Grundmann, A. E. Zhukov, 2000 .

Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots

N. N. Ledentsov, Yu. M. Shernyakov, V. M. Ustinov, 1998 .

Radiative Inter‐Sublevel Transitions in InGaAs/AlGaAs Quantum Dots

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 2001 .

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

A. P. Vasil’ev, S. Mikhrin, N. Ledentsov, 2003 .

Hot carrier relaxation in InAs/GaAs quantum dots

N. Ledentsov, V. Ustinov, Z. Alferov, 1998 .

Semiconductor quantum dot lasers

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2005, Other Conferences.

Formation of InAs quantum dots on a silicon (100) surface

G. E. Cirlin, N. K. Polyakov, O. M. Gorbenko, 1998 .

Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix

I. Krestnikov, N. Ledentsov, Z. Alferov, 1998 .

Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE

A. P. Vasil’ev, N. Ledentsov, M. Maksimov, 2003 .

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

G. E. Cirlin, N. Ledentsov, Yu. G. Musikhin, 2001 .

Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

Z. Alferov, A. Mozharov, I. Mukhin, 2015 .

Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots

Dieter Bimberg, N. N. Ledentsov, Andreas Rosenauer, 1999 .

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Heteroepitaxial growth of InAs on Si: A new type of quantum dot

N. K. Polyakov, N. Ledentsov, A. Zhukov, 1999 .

Lateral association of vertically-coupled quantum dots

I. Krestnikov, N. Ledentsov, A. Zhukov, 1998 .

Formation of coherent superdots using metal‐organic chemical vapor deposition

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 1996 .

InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Victor M. Ustinov, Anton Yu. Egorov, Natalya V. Kryzhanovskaya, 2003 .

Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

N. Ledentsov, M. Maksimov, Y. Shernyakov, 1998 .

Semiconductor Heterostructures: Physical Processes and Applications

Z. Alferov, 1990 .

Yurii Andreevich Ossipyan (on his seventieth birthday)

A. F. Andreev, A. A. Boyarchuk, Z. Alferov, 2001 .

Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼ 1.3 mm

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 2000 .

Large Spectral Splitting of TE and TM Components of QDs in a Microcavity

I. Krestnikov, N. Ledentsov, V. Ustinov, 2001 .

POLARIZATION SPLITTING OF THE GAIN BAND IN QUANTUM WIRE AND QUANTUM DOT ARRAYS

Nikolai N. Ledentsov, Igor L. Krestnikov, Dieter Bimberg, 1999 .

Quantum dots heterostructure lasers: state of the art and future prospects

Zhores I. Alferov, Nikolai N. Ledentsov, N. Ledentsov, 1999, Photonics West.

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

Egorov, Zhukov, Alferov, 1996, Physical review. B, Condensed matter.

Double Heterojunction AlGaAsP Quaternary Lasers

H. M. Macksey, R. D. Burnham, J. B. Woodhouse, 1971 .

Long-wavelength quantum dot lasers on GaAs substrates

J. Lott, S. Mikhrin, N. Ledentsov, 2000 .

Terahertz radiation generation in multilayer quantum-cascade heterostructures

G. E. Cirlin, A. Zhukov, Z. Alferov, 2017 .

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

G. E. Cirlin, A. Zhukov, Z. Alferov, 2016 .

3 THz quantum-cascade laser with metallic waveguide based on resonant-phonon depopulation scheme

G. E. Cirlin, A. Zhukov, Z. Alferov, 2018 .

Structural characterization of (In,Ga)As quantum dots in a GaAs matrix.

Egorov, Alferov, Werner, 1995, Physical review. B, Condensed matter.

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 2003 .

Quantum dots for VCSEL applications at

J. Lott, N. Ledentsov, V. Ustinov, 2002 .

Radiative states in type-II GaSb/GaAs quantum wells.

Ivanov, Beer, Alferov, 1995, Physical review. B, Condensed matter.