Ming-Fu Li

发表

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Mingzhen Xu, Changhua Tan, Ming-Fu Li, 2003 .

Dynamic NBTI of PMOS transistors and its impact on device lifetime

D. Kwong, Ming-Fu Li, M. Li, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices

Ming-Fu Li, C. Shen, J. Pu, 2007, IEEE Transactions on Electron Devices.

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005 .

HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications

D. Kwong, Ming-Fu Li, A. Chin, 2003 .

Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

W. B. Chen, S. H. Lin, Po-Tsung Lee, 2009 .

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Ming-Fu Li, C. Shen, T. Yang, 2008, IEEE Transactions on Device and Materials Reliability.

New degradation mechanisms and reliability performance in tunneling field effect transistors

N. Singh, G. Lo, D. Kwong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

Ming-Fu Li, W. Cao, H. Y. Yu, 2011, IEEE Transactions on Electron Devices.

High-performance microwave coplanar bandpass and bandstop filters on Si substrates

D. Kwong, Ming-Fu Li, S. McAlister, 2003 .

Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime

D. Kwong, Y. Yeo, Ming-Fu Li, 2004 .

The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

Ming-Fu Li, C. Shen, Daming Huang, 2007 .

On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

Ming-Fu Li, C. Shen, W.J. Liu, 2007, 2007 IEEE International Electron Devices Meeting.

Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2–Ni RRAM Devices

Ming-Fu Li, Peng-Fei Wang, Yinyin Lin, 2014, IEEE Transactions on Electron Devices.

Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor

Guo-Qiang Lo, Yong-Zhong Xiong, Dim-Lee Kwong, 2006, IEEE Transactions on Electron Devices.

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

D.S.H. Chan, S.C. Rustagi, Dim-Lee Kwong, 2004, IEEE Transactions on Electron Devices.

A novel program-erasable high-k AlN capacitor with memory function

D. Kwong, Ming-Fu Li, S. McAlister, 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

Peide D. Ye, Ming-Fu Li, Shengwei Li, 2013 .

Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs

Peide D. Ye, Ming-Fu Li, Daming Huang, 2013, IEEE Transactions on Nanotechnology.

A transient capacitance-voltage method for characterizing DX centres

Ming-Fu Li, Y. Jia, H. Grimmeiss, 1996 .

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Yi Xuan, Peide D. Ye, Ming-Fu Li, 2013, IEEE Transactions on Device and Materials Reliability.

Electronic States at Defects and Impurities

Ming-Fu Li, 1995 .

Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2006, 2006 European Solid-State Device Research Conference.

CORRELATION BETWEEN CHARGE PUMPING METHOD AND DIRECT-CURRENT CURRENT VOLTAGE METHOD IN P-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Ming-Fu Li, K. Lo, B. Jie, 1999 .

Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics

D. Kwong, Ming-Fu Li, W. Loh, 2008, IEEE Transactions on Electron Devices.

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

G. Lo, D. Kwong, Y. Yeo, 2007, IEEE Transactions on Electron Devices.

Energy dependence of interface trap density-investigated by the DCIV method [MOSFETs]

Ming-Fu Li, K. F. Lo, Ming-Fu Li, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

Modern semiconductor quantum physics

Ming-Fu Li, 1995 .

Low frequency noise in tunneling field effect transistors

Ming-Fu Li, Hongyu Yu, Daming Huang, 2017 .

Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application

Ming-Fu Li, David-Wei Zhang, S. Ding, 2007 .

Modern semiconductor quantum physics

Ming-Fu Li, 1995 .

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Dielectric Stack

D. Kwong, Y. Yeo, Ming-Fu Li, 2009, IEEE Electron Device Letters.

Characterization of MBE-grown Ga1−xAlxAs alloy films by Raman scattering

Ming-Fu Li, S. Chua, Z. Feng, 1999 .

Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped AlxGa1−xAs

Ming-Fu Li, Y. Jia, P. Y. Yu, 1989 .

Correlation between interface traps and gate oxide leakage current in the direct tunneling regime

Ming-Fu Li, W. Loh, B. Cho, 2002 .

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

S. Balakumar, D. Kwong, Ming-Fu Li, 2006, IEEE Transactions on Electron Devices.

New Insights of BTI Degradation in MOSFETs with SiON Gate Dielectrics

Ming-Fu Li, D. Huang, Wenjun Liu, 2009 .

Analysis of the DCIV peaks in electrically stressed pMOSFETs

Ming-Fu Li, W. Chim, K. Lo, 2001 .

Electronic structure of the multivacancies in Si

Ming-Fu Li, S. Ren, De-qiang Mao, 1985 .

An investigation of deep-level wavefunctions with energies near the band edges

Ming-Fu Li, S. Ren, De-qiang Mao, 1984 .

Intervalley Γ-X Deformation Potentials in III-V Zincblende and Si Semiconductors by Ab Initio Pseudopotential Calculations

Ming-Fu Li, Jian-qing Wang, Z. Gu, 1993 .

Hole quantization effects and threshold voltage shift in pMOSFET-assessed by improved one-band effective mass approximation

Ming-Fu Li, Y. Hou, 2001 .

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1−xAlxN

T. Chong, Ming-Fu Li, W. Fan, 1996 .

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

Ming-Fu Li, Shiyang Zhu, 2006 .

Conduction mechanism of self-rectifying n+Si-HfO2-Ni RRAM

H. Y. Yu, S. J. Ding, Ming-Fu Li, 2013, 2013 IEEE 10th International Conference on ASIC.

Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques

Ming-Fu Li, P. Y. Yu, 1998 .

Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for si analog circuit applications

Byung Jin Cho, Hang Hu, Ming-Fu Li, 2003 .

Electronic properties of zinc‐blende GaN, AlN, and their alloys Ga1−xAlxN

Tow Chong Chong, Ming-Fu Li, T. Chong, 1996 .

BAND-STRUCTURE OF MG1-XZNXSYSE1-Y

Tow Chong Chong, Kok Lay Teo, Ming-Fu Li, 1994 .

EMPIRICAL PSEUDOPOTENTIAL BAND-STRUCTURE CALCULATION FOR ZN1-XCDXSYSE1-Y QUATERNARY ALLOY

Ming-Fu Li, K. Teo, C. Ong, 1993 .

Relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te

Ming-Fu Li, Z. Feng, H. Poon, 1995 .

Electronic structures of the zinc-blende GaN/Ga1−xAlxN compressively strained superlattices and quantum wells

T. Chong, Ming-Fu Li, J. Xia, 1996 .

Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping Layer

Ming-Fu Li, Won Jong Yoo, Ming-Fu Li, 2007, IEEE Transactions on Electron Devices.

Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

D. Kwong, Ming-Fu Li, Hongyu Yu, 2004 .

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Ming-Fu Li, Jian-qing Wang, Z. Gu, 1992 .

FIRST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V ZINCBLENDE SEMICONDUCTORS

Ming-Fu Li, Jian-qing Wang, Z. Gu, 1991 .

Deep level profiles in boron implanted n‐Si

Ming-Fu Li, C. Sah, G. Qin, 1982 .

A new method for the determination of dopant and trap concentration profiles in semiconductors

Chih-Tang Sah, Ming-Fu Li, Ming-Fu Li, 1982 .

Lattice relaxation of the DX centers in Ga/sub 1-x/Al/sub x/As and of the pressure-induced deep donors in GaAs

Ming-Fu Li, E. Weber, W. Hansen, 1987 .

Au acceptor levels in Si under pressure

Ming-Fu Li, Yuichiro Yao, G. Bai, 1985 .

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Ming-Fu Li, Janak Singh, Chunxiang Zhu, 2006 .

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Ming-Fu Li, T. C. Chong, T. Chong, 1998 .

n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Transactions on Electron Devices.

Global predictions of T2 symmetric deep level wavefunctions in semiconductors

Ming-Fu Li, S. Ren, D. Mao, 1983 .

Deep level transient spectroscopy of DX centres in Al0.38Ga0.62As:Te under uniaxial stress

E. Haller, Ming-Fu Li, W. Hansen, 1991 .

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Albert Chin, D.S.H. Chan, Narayanan Balasubramanian, 2004 .

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

Albert Chin, Dim-Lee Kwong, Byung Jin Cho, 2003 .

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Ming-Fu Li, N. Singh, G. Lo, 2010, IEEE Electron Device Letters.

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

N. Singh, G. Lo, D. Kwong, 2010, IEEE Electron Device Letters.

PBTI Investigation of MoS2 n-MOSFET With Al2O3 Gate Dielectric

Ming-Fu Li, A. Chin, S. Ding, 2017, IEEE Electron Device Letters.

Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency Noise

Ming-Fu Li, A. Chin, S. Ding, 2016, IEEE Electron Device Letters.

Trapping and detrapping of oxide border traps in Al2O3 gate dielectric in MoS2 n-MOSFETs under PBTI stress

Ming-Fu Li, A. Chin, S. Ding, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Gate Tunneling in Nanowire MOSFETs

N. Singh, G. Lo, D. Kwong, 2011, IEEE Electron Device Letters.

Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications

Ming-Fu Li, David-Wei Zhang, Chunxiang Zhu, 2005 .

Investigations of NBTI by conventional and new measurement methods for p-MOSFETs

Ming-Fu Li, D. Huang, W.J. Liu, 2008, 2008 2nd IEEE International Nanoelectronics Conference.

Atomic Layer Deposited High‐κ Films and Their Role in Metal‐Insulator‐Metal Capacitors for Si RF/Analog Integrated Circuit Applications

Ming-Fu Li, Chunxiang Zhu, B. Cho, 2006 .

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

Yandong He, Byung Jin Cho, Ming-Fu Li, 2000 .

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

W. D. Wang, D. Kwong, Ming-Fu Li, 2004 .

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers

Tow Chong Chong, Yee-Chia Yeo, Ming-Fu Li, 1998 .

Some issues in advanced CMOS gate stack performance and reliability

Ming-Fu Li, C. Shen, Chunxiang Zhu, 2011 .

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

Y. Yeo, Ming-Fu Li, C. Shen, 2007, IEEE Electron Device Letters.

Fast $V_{\rm th}$ Instability in $\hbox{HfO}_{2}$ Gate Dielectric MOSFETs and Its Impact on Digital Circuits

Dim-Lee Kwong, Tian Yang, Xinpeng Wang, 2006, IEEE Transactions on Electron Devices.

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

T. Chong, Ming-Fu Li, W. Fan, 1996 .

Electronic band structures and optical gain spectra of strained wurtzite GaN-Al/sub x/Ga/sub 1-x/N quantum-well lasers

Ming-Fu Li, T. C. Chong, Wei Jun Fan, 1998 .

A low-voltage CMOS OTA with rail-to-rail differential input range

Yong Ching Lim, U. Dasgupta, Ming-Fu Li, 2000 .

New techniques of capacitance-voltage measurements of semiconductor junctions

Ming-Fu Li, Chih-Tang Sah, Ming-Fu Li, 1982 .

Evolution of quasi-breakdown in thin gate oxides

Byung Jin Cho, Ming-Fu Li, Ming-Fu Li, 2002 .

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

Dim-Lee Kwong, Ming-Fu Li, Ming-Fu Li, 2002 .

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

D. Kwong, Ming-Fu Li, Sungjoo Lee, 2004 .

A high performance MIM capacitor using HfO2 dielectrics

Ming-Fu Li, W. K. Choi, Chunxiang Zhu, 2002, IEEE Electron Device Letters.