Hyejung Choi

发表

An electrically modifiable synapse array of resistive switching memory

H. Hwang, D. Seong, Hyejung Choi, 2009, Nanotechnology.

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

H. Hwang, M. Jo, D. Seong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

H. Hwang, I. Yoo, Dongsoo Lee, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

H. Hwang, D. Seong, R. Dong, 2007 .

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

H. Hwang, D. Seong, Seungjae Jung, 2009, IEEE Electron Device Letters.

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

H. Hwang, D. Seong, R. Dong, 2008 .

Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory

H. Hwang, M. Jo, Seungjae Jung, 2007 .

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

H. Hwang, Tae-Wook Kim, M. Jo, 2008, IEEE Electron Device Letters.

Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

H. Hwang, Seungjae Jung, Hyejung Choi, 2007 .

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance

H. Hwang, M. Jo, Seungjae Jung, 2009 .

Study of Fluorine Incorporation in the Blocking Oxide of MANOS-Type Flash Memory Devices

H. Hwang, M. Jo, Seungjae Jung, 2008 .

Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications

H. Hwang, M. Jo, Seungjae Jung, 2008 .

Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

H. Hwang, M. Jo, Seungjae Jung, 2007 .

Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient

Chang Seo Park, H. Hwang, M. Jo, 2008 .

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

H. Hwang, D. Seong, Seungjae Jung, 2009 .

One Transistor–One Resistor Devices for Polymer Non‐Volatile Memory Applications

Tae-Wook Kim, Hyunsang Hwang, Seung-Hwan Oh, 2009 .

Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications

H. Hwang, Dongsoo Lee, Hyejung Choi, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

H. Hwang, M. Jo, Seungjae Jung, 2007 .

The effect of Ca substitution on the structural and electrical properties of La0.7Sr0.3−xCaxMnO3 perovskite manganite films

Hyejung Choi, Hyung‐Ho Park, Hong-Sub Lee, 2013 .

Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

Hyejung Choi, Hyung‐Ho Park, Hong-Sub Lee, 2011 .

Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing

H. Hwang, M. Jo, D. Seong, 2007 .

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

H. Hwang, D. Seong, Seungjae Jung, 2008 .

Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices

H. Hwang, Tae-Wook Kim, Gunuk Wang, 2010 .

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

H. Hwang, B. Cho, Tae-Wook Kim, 2009, Nanotechnology.

High density silicon nanocrystal embedded in sin prepared by low energy (<500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications

Tae-Wook Kim, Hyunsang Hwang, Sanghun Jeon, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

The effect of Sr concentration on resistive switching properties of La1 − xSrxMnO3 films

Hyejung Choi, Hyung‐Ho Park, Hong-Sub Lee, 2013 .

A study of resistive switching property in Pr0.7Ca0.3MnO3, CaMnO3, and their bi-layer films

Hyejung Choi, Hyung‐Ho Park, Hong-Sub Lee, 2013 .

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

Hyunsang Hwang, Jaesik Yoon, Wootae Lee, 2009, IEEE Electron Device Letters.

Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0.7Ca0.3MnO3 as a Resistance Change Memory Device

H. Hwang, R. Dong, Hyejung Choi, 2009 .

Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate

H. Hwang, D. Seong, R. Dong, 2008 .

Structural and Electrical Properties of Epitaxial Nb-Doped SrTiO3 Film Deposited on Si ( 100 ) Substrate

H. Hwang, D. Seong, Dongsoo Lee, 2007 .

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

H. Hwang, D. Seong, Hyejung Choi, 2009 .

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae-Wook Kim, Hyunsang Hwang, Seung-Hwan Oh, 2008 .

Improved Memory Characteristics of Ge Nanocrystals Using a LaAlO3 Buffer Layer

H. Hwang, M. Jo, Seungjae Jung, 2008 .

Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer

Tae-Wook Kim, Hyunsang Hwang, Byung-Sang Choi, 2008, Nanotechnology.

Comparative Studies of HfO2, Y2O3, and CeO2 Insulators in Metal-Nd2Ti2O7 Ferroelectric-Insulator-Semiconductor Structures

Hyejung Choi, Hyung‐Ho Park, Hong-Sub Lee, 2011 .

Interface Analysis of MIM Capacitor Using ZrN Electrodes and ALD-ZrO2 Dielectrics

J. Moon, Hyejung Choi, Younsoo Kim, 2010 .

Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection

H. Hwang, Tae-Wook Kim, M. Jo, 2009 .

Charge loss behavior of manos-type flash memory cell with different levels of charge injection

H. Hwang, M. Jo, Seungjae Jung, 2009, 2009 IEEE International Reliability Physics Symposium.

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

H. Hwang, M. Jo, Seungjae Jung, 2011 .

Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film

H. Hwang, Tae-Wook Kim, Gunuk Wang, 2008, IEEE Electron Device Letters.