Y. Akasaka

发表

Three-dimensional IC trends

Y. Akasaka, 1986, Proceedings of the IEEE.

Three-dimensional topography simulation model: etching and lithography

Y. Akasaka, Tatsuya Kunikiyo, Norihiko Kotani, 1990 .

Lateral spread of boron ions implanted in silicon

Satoru Kawazu, Y. Akasaka, Kazuo Horie, 1972 .

SOI/SOI/Bulk-Si triple-level structure for three-dimensional devices

S. Kusunoki, Y. Akasaka, H. Nakata, 1986, IEEE Electron Device Letters.

Gate capacitance characteristics of gate N/sup -/ overlap LDD transistor with high performance and high reliability

Masahide Inuishi, Y. Akasaka, Katsuhiro Tsukamoto, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Reverse Short-Channel Effects due to the Lateral Diffusion of the Point-Defects Induced by the Source/Drain Ion Implantation

Y. Akasaka, T. Uchida, N. Kotani, 1992, NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,.

Fabrication of a carbon nanotube device using a patterned electrode and a local electric field

Yoichi Akasaka, Kenji Gamo, Fujio Wakaya, 2003 .

Three-dimensional integrated circuit: technology and application prospect

Yoichi Akasaka, Y. Akasaka, 1989 .

Local‐Oxidation‐Induced Stress Measured by Raman Microprobe Spectroscopy

Y. Akasaka, T. Nishimura, M. Hirayama, 1990 .

Raman microprobe study of recrystallization in ion‐implanted and laser‐annealed polycrystalline silicon

Y. Akasaka, T. Nishimura, S. Nakashima, 1983 .

Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon

Y. Akasaka, R. Shimizu, T. Koshikawa, 1977 .

Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique

Y. Akasaka, N. Tsubouchi, T. Nishimura, 1982 .

Crystalline film quality in reduced pressure silicon epitaxy at low temperature

Y. Akasaka, H. Nakata, S. Nagao, 1985 .

Self-aligned silicide technology for ultra-thin SIMOX MOSFETs

Y. Akasaka, Y. Yamaguchi, K. Fujibayashi, 1992 .

Depth distributions of defects and impurities in 100‐keV B+ ion implanted silicon

Y. Akasaka, H. Nishi, T. Sakurai, 1973 .

P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall

Y. Akasaka, H. Hara, H. Iwai, 1993 .

Thermal Diffusion of Ion-Implanted Arsenic in Silicon

Y. Akasaka, K. Tsukamoto, K. Kijima, 1980 .

Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobe

Y. Akasaka, T. Nishimura, S. Nakashima, 1982 .

Topographical characteristics of recrystallized silicon films by scanning cw laser irradiation

Y. Akasaka, H. Nakata, T. Isu, 1982 .

Raman scattering study of ion implanted and C.W.-Laser annealed polycrystalline silicon

Y. Akasaka, Nishimura Tadashi, A. Mitsuishi, 1981 .

Laser Crystallization of Polycrystalline Silicon by Controlling Lateral Thermal Profile

Y. Akasaka, T. Nishimura, H. Nakata, 1985 .

Metal‐oxide‐semiconductor field‐effect transistors and a ring oscillator fabricated in laser‐recrystallized polycrystalline silicon islands

Y. Akasaka, T. Nishimura, H. Nakata, 1983 .

Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe

Y. Akasaka, A. Mitsuishi, S. Nakashima, 1986 .

The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe

Y. Akasaka, A. Mitsuishi, S. Nakashima, 1986 .

Effect of Grain Boundaries on the I-V Characteristics of P-Channel MOSFET/SOI

Y. Akasaka, T. Nishimura, S. Kusunoki, 1985 .

Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication

Y. Akasaka, T. Nishimura, A. Ishizu, 1983 .

Vertically Integrated MOS Devices with Double Active Layers

Y. Akasaka, T. Nishimura, H. Nakata, 1984 .

High-energy ion implantation for ULSI

Yoichi Akasaka, Katsuhiro Tsukamoto, Takashi Kuroi, 1991 .

Current status of ion implantation for VLSI applications

Y. Akasaka, 1989 .

Oxygen effects on arsenic diffusion in silicon dioxide

Y. Akasaka, K. Tsukamoto, K. Horie, 1978 .

A mobility model including the screening effect in MOS inversion layer

Yoichi Akasaka, Norihiko Kotani, Masayoshi Shirahata, 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Awaking of ferromagnetism in GaMnN through control of Mn valence

I. Tanaka, Y. Akasaka, Kenichi Yoshida, 2006, cond-mat/0608653.

Fabrication of Micro-Fluid-Channel Structures by Focused Ion Beam Techniques

Y. Akasaka, Hiroaki Kobayashi, J. Yanagisawa, 2009 .

Orientation control of the silicon film on insulator by laser recrystallization

Y. Akasaka, Shigeru Kusunoki, Y. Akasaka, 1987 .

High speed bipolar process with full ion implantation and self-aligned contact structure

Y. Akasaka, Y. Horiba, H. Nakata, 1978, 1978 International Electron Devices Meeting.

Re-examination of detailed structure of alkali silicate glasses based on two types of diffraction data

Y. Akasaka, I. Yasui, H. Inoue, 1994 .

Structure and Frequency Spectra of Silica Glass Simulated by Molecular Dynamics Method

Y. Akasaka, I. Yasui, A. Makishima, 1993 .

Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Y. Akasaka, Y. Shiraishi, J. Yanagisawa, 2007 .

Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation

Y. Akasaka, H. Asahi, K. Gamo, 2006 .

Improvement in NBTI by catalytic-CVD silicon nitride for hp-65nm technology

Y. Akasaka, Y. Nara, K. Torii, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..