Tae-Yon Lee

发表

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

Cheolkyu Kim, Dongmin Kang, Tae-Yon Lee, 2009 .

Fullerene thermal insulation for phase change memory

David G. Cahill, D. Suh, Cheolkyu Kim, 2008 .

Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x

Tae-Yon Lee, Ki-Bum Kim, W. Kim, 2002 .

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

D. Suh, Tae-Yon Lee, Ki-Joon Kim, 2010 .

Hierarchical structure and phase transition of(GeTe)n(Sb2Te3)mused for phase-change memory

D. Suh, Tae-Yon Lee, Ki-Joon Kim, 2008 .

Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry

D. Suh, Tae-Yon Lee, Y. Khang, 2008 .

Electron-beam lithography of Co∕Pd multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer

Tae-Yon Lee, Ki-Bum Kim, K. Shin, 2006 .

Optical properties of pseudobinary GeTe, Ge 2 Sb 2 Te 5 , GeSb 2 Te 4 , GeSb 4 Te 7 , and Sb 2 Te 3 from ellipsometry and density functional theory

Tae-Yon Lee, Y. Khang, Jun-Woo Park, 2009 .

Publisher's Note: Optical properties of pseudobinary GeTe, Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Sb2Te3 from ellipsometry and density functional theory

Tae-Yon Lee, Y. Khang, Jun-Woo Park, 2009 .

Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys

D. Suh, Tae-Yon Lee, Ki-Joon Kim, 2008 .

High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution

Tae-Yon Lee, Ki-Bum Kim, D. Kang, 2007 .

Separate domain formation in Ge2Sb2Te5–SiOx mixed layer

Tae-Yon Lee, Dong-Ho Ahn, Dongbok Lee, 2006 .