I. Wu

发表

Relation between hot-carrier light emission and kink effect in poly-Si thin film transistors

M. Koyanagi, H. Kurino, T. Hashimoto, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Polycrystalline Silicon Thin Film Transistors for Liquid Crystal Displays

I. Wu, 1994 .

Effects of Silicon Implantation and Processing Temperature on Performance of Polycrystalline Silicon Thin-Film Transistors Fabricated from Low Pressure Chemical Vapor Deposited Amorphous Silicon

M. H. Zarzycki, I. Wu, Tiao-Yuan Huang, 1987 .

Modeling of leakage current distributions in series connected polysilicon thin film transistors

J. Sturm, I. Wu, T. King, 1995, Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays.

Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing

T.-Y. Huang, I.-W. Wu, A. Chiang, 1990, IEEE Electron Device Letters.

Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing

L. J. Chen, I. Wu, C. Nieh, 1988 .

Small geometry effects in n- and p-channel polysilicon thin film transistors

T. Y. Huang, M. Koyanagi, I. Wu, 1988, Technical Digest., International Electron Devices Meeting.

Effective density‐of‐states distributions for accurate modeling of polycrystalline‐silicon thin‐film transistors

Tsu-Jae King, M. Hack, I. Wu, 1994 .

Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films

I. Wu, Tiao-Yuan Huang, A. Chiang, 1989 .

Evaluation of polycrystalline silicon thin film transistors with the charge pumping technique

M. Koyanagi, I. Wu, A. Lewis, 1990, International Technical Digest on Electron Devices.

Crystallization of Silicon Ion Implanted LPCVD Amorphous Silicon Films for High Performance Poly-TFT

T. Y. Huang, I. Wu, A. Chiang, 1990 .

Use of sacrificial spacers for fabricating LDD transistors in a CMOS process

J. Y. Chen, I. Wu, Tiao-Yuan Huang, 1986 .

Microstructure and properties of A15 superconductors formed by direct precipitation

I. Wu, M. Hong, John Morris, 2010 .

Defect Passivation Kinetics and Small Geometry Effects in Polysilicon Thin Film Transistors

I. Wu, A. Lewis, W. Jackson, 1990 .

Sheet resistivity and transmission electron microscope investigations of BF+2 ‐implanted silicon

L. J. Chen, I. Wu, 1981 .

Damage to shallow n+/p and p+/n junctions by CHF3+CO2 reactive ion etching

R. Street, I. Wu, J. Mikkelsen, 1988 .

Developmental Studies on Powder-Processed Nb 3 A1 Superconducting Wire

I. Wu, M. Hong, J. Hong, 1982 .

Factors influencing the formation and growth of faulted loops in BF+2 ‐implanted silicon

L. J. Chen, I. Wu, Yun-chung Wu, 1981 .

The crystallographic orientation of A15 V3Ga and Nb3Al precipitates in BCC matrices

I. Wu, M. Hong, J. Morris, 1981 .

The effects of doping impurities and substrate crystallin on the formation of nickel suicides on silicon at 200–280° C

I. Wu, A. Chiang, L. J. Chen, 1988 .

Effects of implantation impurities and substrate crystallinity on the formation of NiSi2 on silicon at 200–280 °C

L. J. Chen, I.-W. Wu, I. Wu, 1987 .

Optimization of BF2+ implanted and rapidly annealed junctions in silicon

I. Wu, J. Mikkelsen, R. T. Fulks, 1986 .

Characterization of microstructural defects in BF + 2 -implanted silicon

I. Wu, Lun-Lun Chen, 1985 .

Physical models for degradation effects in polysilicon thin-film transistors

I. Wu, A. Lewis, M. Hack, 1993 .

Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

T.-Y. Huang, I.-W. Wu, A. Chiang, 1991, IEEE Electron Device Letters.

Direct observation of crystallization in silicon by in situ high-resolution electron microscopy

I. Wu, R. Sinclair, J. Morgiel, 1993 .

A new self‐aligned subtractive gate process for high‐voltage and complementary polycrystalline silicon thin‐film transistors

I. Wu, A. Lewis, A. Chiang, 1990 .

The influence of magnesium addition to the bronze on the critical current of bronze-processed multifilamentary Nb3Sn

I. Wu, W. Hassenzahl, D. Dietderich, 1983, IEEE Transactions on Magnetics.

Severe loss of dopant activity due to CHF3+CO2 reactive ion etch damage

I. Wu, J. Mikkelsen, 1986 .

An in Situ Hrem Study of Crystal Nucleation in Amorphous Silicon thin Films

I. Wu, R. Sinclair, J. Morgiel, 1990 .

Damage To Gate Oxides In Reactive Ion Etching

M. Koyanagi, T. Y. Huang, I.-W. Wu, 1990, Other Conferences.

The microstructure and critical current characteristic of a bronze‐processed multifilamentary Nb3Sn superconducting wire

I. Wu, M. Hong, W. Hassenzahl, 1983 .

Mechanism and device-to-device variation of leakage current in polysilicon thin film transistors

W. B. Jackson, T. Y. Huang, I.-W. Wu, 1990, International Technical Digest on Electron Devices.

Comparison of the mechanisms of hydrogenation by rf plasma and SiNx

I-Min Lu, Li-Ming Wang, I-Wei Wu, 2000, SPIE Photonics Taiwan.

Low-Temperature Operation of Polycrystalline Silicon Thin-Film Transistors

T. Hashimoto, H. Mori, K. Hata, 1991 .

An Investigation on the Enhancement of the Critical Current Densities in Bronze-Processed Nb3Sn

J. W. Morris, W. Hassenzahl, W. Gilbert, 1981 .

High-voltage thin film transistors for large area microelectronics

I. Wu, A. Lewis, M. Hack, 1988, Technical Digest., International Electron Devices Meeting.

Hydrogen diffusion in polycrystalline silicon thin films

I. Wu, W. Jackson, N. Johnson, 1992 .

In Situ Hrem Observations of Crystallization in LPCVD Amorphous Silicon

I. Wu, R. Sinclair, J. Morgiel, 1990 .

The charge-pumping technique for grain boundary trap evaluation in polysilicon TFTs

M. Koyanagi, I.-W. Wu, M. Koyanagi, 1992, IEEE Electron Device Letters.

Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT

T.-Y. Huang, I.-W. Wu, A. Chiang, 1989, IEEE Electron Device Letters.

Polysilicon Thin Film Transistor Material and Device Technologies

M. Hack, I. Wu, A. Lewis, 1991 .

A simpler 100-V polysilicon TFT with improved turn-on characteristics

T.-Y. Huang, I.-W. Wu, A. Chiang, 1990, IEEE Electron Device Letters.

Critical current density of bronze‐processed multifilamentary Nb3Sn wires with magnesium addition to the matrix

J. Glazer, I. Wu, W. Hassenzahl, 1984 .

Physical mechanisms for short channel effects in polysilicon thin films transistors

T. Y. Huang, I.-W. Wu, R. H. Bruce, 1989, International Technical Digest on Electron Devices Meeting.

Reactive Ion Etching Damage to Shallow Junctions

R. Street, I. Wu, R. Bruce, 1986 .