M. Portail

发表

Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

A. Ouerghi, M. Ridene, A. Balan, 2011 .

Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Portail, 2010 .

Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

M. Portail, Rami Mantach, P. Vennégués, 2020, Applied Physics Express.

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

M. Portail, Y. Cordier, É. Frayssinet, 2019, Journal of Crystal Growth.

GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

M. Portail, Y. Cordier, B. Damilano, 2016 .

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD

T. Chassagne, M. Portail, A. Michon, 2013 .

HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY APPLIED TO A GRAPHITE SURFACE MODIFIED BY ION BOMBARDMENT

M. Portail, D. Roy, D. Roy, 2000 .

Dynamical properties of graphite and peculiar behaviour of the low-energy plasmon

M. Portail, J. Layet, M. Carrere, 1999 .

Magnetoresistance of disordered graphene: From low to high temperatures

M. Portail, A. Michon, B. Jouault, 2014, 1406.6255.

Behaviour of the 3C–SiC(100) c(2 × 2) (C‐terminated) and 3 × 2 (Si‐rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

A. Leycuras, T. Chassagne, M. Portail, 2005 .

Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy

T. Chassagne, M. Portail, Y. Cordier, 2009 .

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Portail, Y. Cordier, M. Bah, 2022, Materials Science Forum.

Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

T. Chassagne, M. Portail, J. Michaud, 2011 .

Evidence of electrical activity of extended defects in 3C-SiC grown on Si

T. Chassagne, M. Portail, J. Michaud, 2010 .

Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates

A. Leycuras, T. Chassagne, M. Portail, 2007 .

A detailed study of AlN and GaN grown on silicon‐on‐porous silicon substrate

M. Portail, Y. Cordier, G. Gautier, 2017 .

Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

M. Portail, B. Damilano, V. Brändli, 2019, Journal of Crystal Growth.

Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers

T. Chassagne, M. Portail, A. Michon, 2015 .

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers

T. Chassagne, M. Portail, J. Michaud, 2012 .

Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

M. Portail, S. Chenot, M. Tchernycheva, 2022, Crystal Growth & Design.

Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

M. Portail, Rami Mantach, P. Vennégués, 2019, Journal of Applied Physics.

Optical properties of In x Ga 1-x N/GaN quantum-disks obtained by selective area sublimation

J. Brault, M. Portail, J. Massies, 2017 .

Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes

M. Portail, P. Vennégués, J. Michaud, 2017 .

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

T. Chassagne, M. Portail, Y. Cordier, 2014 .

A new approach for AFM cantilever elaboration with 3C-SiC

T. Chassagne, M. Portail, A. Madouri, 2012 .

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

M. Portail, A. Michon, W. Escoffier, 2014 .

Highly sensitive determination of N+ doping level in 3C-SiC and GaN epilayers by Fourier transform infrared spectroscopy

T. Chassagne, M. Portail, P. Mierry, 2009 .

Screening and engineering of colour centres in diamond

M. Portail, K. Nordlund, J. Roch, 2018, Journal of Physics D: Applied Physics.

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

M. Portail, S. Chenot, J. Michaud, 2022, Materials Science Forum.

Electronic modifications and surface reactivity of an ion bombarded graphite surface

M. Portail, T. Angot, J. Layet, 2005 .

Dispersion of the interband π electronic excitation of highly oriented pyrolytic graphite measured by high resolution electron energy loss spectroscopy

M. Portail, N. Papageorgiou, J. Layet, 2000 .

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

A. Ouerghi, M. Ridene, R. Belkhou, 2014, Nanotechnology, science and applications.

investigation of structural and electronic properties of epitaxial graphene on 3 C – SiC ( 100 ) / Si ( 100 ) substrates

A. Ouerghi, M. Ridene, R. Belkhou, 2014 .

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

T. Chassagne, M. Portail, A. Michon, 2014 .

A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

M. Portail, A. Michon, Y. Cordier, 2018 .

High temperature annealing and CVD growth of few‐layer graphene on bulk AlN and AlN templates

J. Brault, S. Matta, T. Chassagne, 2017 .

CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

T. Chassagne, M. Portail, A. Michon, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Rotated domain network in graphene on cubic-SiC(001)

A. Zakharov, M. Portail, I. Shvets, 2014, Nanotechnology.

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

T. Chassagne, M. Portail, A. Michon, 2013 .

Oxygen isotope variations in Mg-rich olivines from type I chondrules in carbonaceous chondrites

M. Portail, G. Libourel, K. Nagashima, 2021, Geochimica et Cosmochimica Acta.

Chondrules as direct thermochemical sensors of solar protoplanetary disk gas

M. Portail, G. Libourel, 2018, Science Advances.

On the significance of oxygen-isotope variations in chondrules from carbonaceous chondrites

M. Portail, G. Libourel, K. Nagashima, 2023, Geochimica et Cosmochimica Acta.

Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

T. Chassagne, M. Portail, J. Michaud, 2010 .

Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC

T. Chassagne, M. Portail, J. Michaud, 2012 .

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2014 .

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

A. Leycuras, T. Chassagne, M. Portail, 2007 .

Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions

A. Leycuras, T. Chassagne, M. Portail, 2006 .

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

T. Chassagne, M. Portail, S. Juillaguet, 2008 .

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

M. Portail, P. Vennégués, J. Michaud, 2016 .

Graphitization of the 6H–SiC(0 0 0 1) surface studied by HREELS

M. Portail, T. Angot, J. Layet, 2002 .

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

T. Chassagne, M. Portail, A. Michon, 2014, Nature Communications.

Structural trends in Si dots formation on SiC surfaces using CVD environment

T. Chassagne, M. Portail, A. Michon, 2014 .

On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

M. Portail, P. Vennégués, J. Michaud, 2016 .

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

T. Chassagne, M. Portail, P. Vennégués, 2016 .

Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

M. Portail, P. Vennégués, J. Michaud, 2015 .

3C-SiC: New Interest for MEMS Devices

T. Chassagne, M. Portail, J. Michaud, 2014 .

Chapter 2 3 CSiC — From Electronic to MEMS Devices

M. Portail, J. Michaud, D. Alquier, 2018 .

Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.

T. Chassagne, M. Portail, M. Zielinski, 2009 .

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

M. Portail, B. Damilano, V. Brändli, 2020, Scientific Reports.

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Ouerghi, T. Chassagne, M. Portail, 2010 .

Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties

A. Ouerghi, R. Belkhou, M. Portail, 2010 .

Epitaxial graphene on cubic SiC(111)Si(111) substrate.

J. Penuelas, A. Ouerghi, D. Lucot, 2010, Applied physics letters.

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

T. Chassagne, M. Portail, Y. Cordier, 2008 .

Ion-induced interdiffusion of surface GaN quantum dots

M. Portail, A. Wieck, F. Semond, 2017 .

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

M. Portail, Y. Cordier, F. Vaurette, 2023, Microelectronic Engineering.

Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

T. Chassagne, M. Portail, J. Michaud, 2012 .

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

T. Chassagne, M. Portail, J. Michaud, 2010 .

Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates

T. Chassagne, M. Portail, A. Michon, 2018, Materials Science Forum.

3C-SiC — From Electronic to MEMS Devices

M. Portail, J. Michaud, D. Alquier, 2015 .

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2015 .

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

T. Chassagne, M. Portail, A. Madouri, 2014 .

Accelerated Publication: Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

T. Chassagne, M. Portail, J. Michaud, 2013 .

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements

T. Chassagne, M. Portail, J. Michaud, 2011 .

Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

T. Chassagne, M. Portail, Y. Cordier, 2008 .

Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration

M. Portail, J. Michaud, D. Alquier, 2016 .

Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

Daniel Alquier, M. Portail, J. Michaud, 2015 .

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

T. Chassagne, M. Portail, P. Vennégués, 2015 .

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

T. Chassagne, M. Portail, J. Michaud, 2012 .

Micromachining of thin 3C-SiC films for mechanical properties investigation

T. Chassagne, M. Portail, J. Michaud, 2010 .

Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon

T. Chassagne, M. Portail, A. Michon, 2011 .

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon

T. Chassagne, M. Portail, Y. Cordier, 2009 .

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

M. Portail, A. Michon, M. Tchernycheva, 2023, Microelectronic Engineering.

Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)

T. Chassagne, M. Portail, A. Michon, 2012 .

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

T. Chassagne, M. Portail, A. Michon, 2012 .

Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements

M. Portail, A. Michon, Y. Cordier, 2023, Defect and Diffusion Forum.

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

T. Chassagne, M. Portail, A. Michon, 2016 .

Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

M. Portail, A. Michon, F. Torregrosa, 2019 .

Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

T. Chassagne, M. Portail, J. Chauveau, 2009 .

Graphene growth using propane‐hydrogen CVD on 6H‐SiC(0001): temperature dependent interface and strain

A. Ouerghi, T. Chassagne, M. Portail, 2012 .

A graphene electron lens

M. Portail, E. Moyen, W. Wulfhekel, 2012 .

Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

M. Portail, A. Michon, Y. Cordier, 2022, Materials Science Forum.

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

T. Chassagne, M. Portail, A. Michon, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Realization of AlGaN/GaN HEMTs on 3C‐SiC/Si(111) substrates

T. Chassagne, M. Portail, Y. Cordier, 2008 .

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

T. Chassagne, M. Portail, M. Zielinski, 2010 .