Jie Zhang

发表

High temperature CVD growth of SiC

A. Ellison, Jie Zhang, J. Peterson, 1999 .

Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Jie Zhang, A. Henry, E. Janzén, 2002 .

NEGATIVE-U CENTERS IN 4H SILICON CARBIDE

A. Ellison, Jie Zhang, E. Janzén, 1998 .

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

R. M. Ward, Jie Zhang, D. Sheridan, 2008 .

In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth

A. Ellison, Jie Zhang, E. Janzén, 2002 .

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy

Michael S. Mazzola, Yaroslav Koshka, Jie Zhang, 2005 .

Gate oxide prepared by nanometre silicon wet oxidation at low temperature for Si/SiGe PMOSFET application

Jie Zhang, J. C. Li, M. Yang, 2001 .

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Jie Zhang, Shulin Liu, Chao Zhang, 2018, Advances in Condensed Matter Physics.

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Jie Zhang, G. Chung, D. Hansen, 2016 .

Side-surface structure of a commercial β-silicon carbide whisker

Jie Zhang, L. Geng, C. Yao, 2004 .

Epitaxial growth of SiC in a chimney CVD reactor

A. Ellison, Jie Zhang, A. Henry, 2002 .

Large Area 4H SiC Products for Power Electronic Devices

Jie Zhang, G. Chung, D. Hansen, 2016 .

Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

Jie Zhang, J. Bergman, E. Janzén, 2003 .

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Jie Zhang, Q. Wahab, E. Janzén, 2001 .

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Balaji Raghothamachar, Michael Dudley, Jie Zhang, 2012 .

Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor

A. Ellison, Jie Zhang, A. Henry, 2001 .

Nitrogen impurity incorporation behavior in a chimney HTCVD process : pressure and temperature dependence

A. Ellison, Jie Zhang, A. Henry, 1999 .

Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

A. Ellison, Jie Zhang, A. Henry, 2002 .

Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

A. Ellison, Jie Zhang, A. Henry, 2000 .

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Jie Zhang, M. Loboda, G. Chung, 2014 .

Defect Reduction in SiC Growth Using Physical Vapor Transport

Jie Zhang, M. Loboda, G. Chung, 2010 .

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Jie Zhang, M. Loboda, G. Chung, 2014 .

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Jie Zhang, M. Loboda, G. Chung, 2011 .

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Jie Zhang, M. Loboda, G. Chung, 2014 .

High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

Janna R. B. Casady, Jie Zhang, J. Casady, 2006 .

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Jie Zhang, M. Loboda, G. Chung, 2012 .

Progress of SiC Epitaxy on 150mm Substrates

Jie Zhang, D. Hansen, K. Moeggenborg, 2015 .

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Jie Zhang, M. Loboda, G. Chung, 2015, Journal of Electronic Materials.

Defect Reduction Paths in SiC Epitaxy

Jie Zhang, M. Loboda, G. Chung, 2014 .

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor

Jie Zhang, J. Casady, C. Hoff, 2005 .

Erratum: Negative-U centers in 4H silicon carbide [Phys. Rev. B 58, R10 119 (1998)]

A. Ellison, Jie Zhang, E. Janzén, 1999 .

Morphology Control for Growth of Thick Epitaxial 4H SiC Layers

A. Ellison, Jie Zhang, E. Janzén, 2000 .

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Jie Zhang, I. Ivanov, L. Storasta, 2002 .

Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl

Janna R. B. Casady, Jie Zhang, M. Mazzola, 2008 .

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Jie Zhang, M. Loboda, G. Chung, 2015 .