H. Tsuchida

发表

Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces

H. Tsuchida, I. Kamata, K. Izumi, 1999 .

Analysis of carrier lifetimes in N + B-doped n-type 4H-SiC epilayers

H. Tsuchida, A. Yang, K. Murata, 2019, Journal of Applied Physics.

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

H. Tsuchida, K. Asano, A. Tanaka, 2014 .

Three-dimensional imaging of extended defects in 4H-SiC by optical second-harmonic generation and two-photon-excited photoluminescence

H. Tsuchida, R. Tanuma, 2014 .

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, 2002 .

Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes

H. Tsuchida, T. Ohshima, T. Makino, 2013, IEEE Transactions on Nuclear Science.

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

H. Tsuchida, T. Ohshima, N. Iwamoto, 2015 .

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

H. Tsuchida, I. Kamata, T. Tawara, 2005 .

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

H. Tsuchida, I. Kamata, K. Izumi, 2000 .

Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

H. Tsuchida, I. Kamata, T. Kozawa, 2013 .

Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

H. Tsuchida, M. Yoshikawa, A. Miyashita, 2007 .

Time-resolved photoluminescence spectral analysis of phonon-assisted DAP and e-A recombination in N+B-doped n-type 4H-SiC epilayers

H. Tsuchida, K. Murata, A. Yang, 2019, Journal of Physics D: Applied Physics.

Direct evaluation of threading dislocations in 4H-SiC through large-angle convergent beam electron diffraction

H. Tsuchida, I. Kamata, R. Tanuma, 2020, Philosophical Magazine.

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

H. Tsuchida, I. Kamata, H. Fujisawa, 2004 .

Fabrication and Electrical Properties of High-Power SiC Zener Diodes

H. Tsuchida, Y. Sugawara, K. Nakayama, 2010 .

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

H. Tsuchida, I. Kamata, Y. Sugawara, 2007 .

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

H. Tsuchida, I. Kamata, Y. Sugawara, 2006 .

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

H. Tsuchida, I. Kamata, Y. Sugawara, 2005 .

4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

H. Tsuchida, I. Kamata, T. Nakamura, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

H. Tsuchida, Toshiharu Ohnuma, T. Jikimoto, 2004 .

IRAS Analysis of the Early Stage of Thermal Oxidation on a SiC Surface

H. Tsuchida, I. Kamata, K. Izumi, 2000 .

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

H. Tsuchida, T. Ohshima, T. Makino, 2021 .

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

H. Tsuchida, I. Kamata, H. Fujisawa, 2001 .

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

H. Tsuchida, I. Kamata, T. Tawara, 2004 .

Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation

H. Tsuchida, M. Yoshikawa, A. Miyashita, 2007 .

Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

H. Tsuchida, I. Kamata, Masahiko Ito, 2009 .

Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

H. Tsuchida, L. Storasta, Masahiko Ito, 2008 .

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

H. Tsuchida, I. Kamata, L. Storasta, 2006 .

Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor

Kunikazu Izumi, Hidekazu Tsuchida, Isaho Kamata, 2003 .

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

H. Tsuchida, I. Kamata, R. Tanuma, 2018, Journal of Applied Physics.

Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

H. Tsuchida, I. Kamata, R. Tanuma, 2014 .

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation

H. Tsuchida, R. Tanuma, 2014 .

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

H. Tsuchida, Xuan Zhang, M. Nagano, 2011 .

Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

H. Tsuchida, I. Kamata, K. Izumi, 2001 .

Simulation Analysis of Increase in ON-State Voltage of 4H-SiC Bipolar Devices Due to Single-Shockley-Stacking Faults

H. Tsuchida, T. Miyazawa, S. Asada, 2021, IEEE Transactions on Electron Devices.

Effects of stacking faults on electron transport in 4H-SiC n-type epilayers under unipolar operation evaluated by TCAD simulation

H. Tsuchida, T. Miyazawa, S. Asada, 2020, Japanese Journal of Applied Physics.

Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC

H. Tsuchida, I. Kamata, N. Hoshino, 2019, Japanese Journal of Applied Physics.

Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

H. Tsuchida, I. Kamata, K. Izumi, 2002 .

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

H. Tsuchida, T. Kimoto, H. Okumura, 2016 .

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

H. Tsuchida, I. Kamata, K. Izumi, 2000 .

Vanadium doping in 4H-SiC epitaxial growth for carrier lifetime control

H. Tsuchida, T. Miyazawa, T. Tawara, 2016 .

Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

H. Tsuchida, K. Kojima, Y. Ishida, 2014 .

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2012 .

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

H. Tsuchida, K. Kojima, H. Okumura, 2014 .

X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

H. Tsuchida, I. Kamata, R. Tanuma, 2013 .

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

H. Tsuchida, I. Kamata, R. Tanuma, 2012 .

Recent advances in 4H-SiC epitaxy for high-voltage power devices

Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, 2017 .

Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

H. Tsuchida, K. Kojima, H. Okumura, 2020 .

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

H. Tsuchida, I. Kamata, T. Kozawa, 2016 .

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

H. Tsuchida, I. Kamata, T. Kozawa, 2016 .

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

H. Tsuchida, I. Kamata, T. Kozawa, 2014 .

Thick 4H-SiC Epitaxial Growth and Defect Reduction for Very High Voltage Bipolar Devices

H. Tsuchida, T. Miyazawa, 2013 .

Growth of 4H-SiC Epilayers and Z1/2 Center Elimination

H. Tsuchida, T. Miyazawa, 2012 .

Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

H. Tsuchida, I. Kamata, Xuan Zhang, 2010 .

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

H. Tsuchida, I. Kamata, K. Kojima, 2008 .

Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H–SiC surface

Hidekazu Tsuchida, Masahiro Nagano, John Rozen, 2013 .

Atomic characterization of nano-facet nitridation at SiC ( 1 1 ¯ 00 ) surface

H. Tsuchida, K. Murata, F. Matsui, 2018 .

Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, 2007 .

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

H. Tsuchida, T. Kimoto, T. Miyazawa, 2015 .

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

H. Tsuchida, I. Kamata, Masahiko Ito, 2009 .

Formation of Extended Defects in 4H-SiC Epitaxial Growth

H. Tsuchida, I. Kamata, M. Nagano, 2011 .

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

H. Tsuchida, K. Fukuda, T. Hatakeyama, 2010 .

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

H. Tsuchida, I. Kamata, M. Nagano, 2008 .

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

H. Tsuchida, I. Kamata, Tomonori Nakamura, 2006 .

Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

H. Tsuchida, I. Kamata, Y. Sugawara, 2005 .

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

H. Tsuchida, I. Kamata, K. Izumi, 2004 .

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles

H. Tsuchida, M. Yoshikawa, A. Miyashita, 2010 .

Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport

H. Tsuchida, H. Okumura, H. Okumura, 2018, Journal of Crystal Growth.

Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

H. Tsuchida, T. Kimoto, H. Okumura, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers

H. Tsuchida, K. Fukuda, T. Hatakeyama, 2010 .

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, Yi Chen, 2008 .

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

H. Tsuchida, T. Kimoto, H. Okumura, 2018 .

Understanding and reduction of degradation phenomena in SiC power devices

Y. Yonezawa, H. Tsuchida, T. Kimoto, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

H. Tsuchida, I. Kamata, T. Kimoto, 2016 .

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

H. Tsuchida, T. Kimoto, K. Fukuda, 2016 .

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

H. Tsuchida, I. Kamata, L. Storasta, 2007 .

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

H. Tsuchida, I. Kamata, Yi Chen, 2009 .

Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

H. Tsuchida, I. Kamata, N. Hoshino, 2020, Applied Physics Express.

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

H. Tsuchida, Xuan Zhang, M. Nagano, 2012 .

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

H. Tsuchida, Xuan Zhang, M. Nagano, 2012 .

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

H. Tsuchida, I. Kamata, M. Dudley, 2007 .

Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

H. Tsuchida, I. Kamata, H. Okumura, 2018, Journal of Applied Physics.

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

H. Tsuchida, I. Kamata, H. Okumura, 2018, Materials Science Forum.

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

H. Tsuchida, I. Kamata, T. Kimoto, 2017 .

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

H. Tsuchida, I. Kamata, T. Kimoto, 2017 .

Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals

H. Tsuchida, T. Ise, H. Okumura, 2017 .

Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing

H. Tsuchida, Xuan Zhang, 2012 .

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

H. Tsuchida, K. Kojima, H. Okumura, 2008 .

Fast growth of n-type 4H-SiC bulk crystal by gas-source method

H. Tsuchida, I. Kamata, J. Kojima, 2017 .

Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime

H. Tsuchida, K. Asano, A. Tanaka, 2013 .

Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults

H. Tsuchida, K. Asano, A. Tanaka, 2013 .

Point defect reduction and carrier lifetime improvement of Si- and C-face 4H-SiC epilayers

H. Tsuchida, T. Miyazawa, 2012 .

Annealing effects on single Shockley faults in 4H-SiC

H. Tsuchida, I. Kamata, Y. Sugawara, 2006 .

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, N. Ohya, 2019, Materials Science Forum.

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

Hidekazu Tsuchida, L. Storasta, H. Tsuchida, 2007 .

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

H. Tsuchida, J. Kojima, S. Onda, 2014 .

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

H. Tsuchida, Y. Hijikata, Y. Yamazaki, 2023, Journal of Applied Physics.

Suppressed expansion of single Shockley stacking faults at narrow widths in 4H-SiC

H. Tsuchida, I. Kamata, K. Murata, 2019, Applied Physics Express.

Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

H. Tsuchida, K. Itoh, K. Maeda, 2013 .

Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping

H. Tsuchida, A. Yang, T. Miyazawa, 2019, Journal of Applied Physics.

Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC

H. Tsuchida, I. Kamata, K. Murata, 2021 .

Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers

H. Tsuchida, A. Yang, T. Miyazawa, 2021 .

In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation

H. Tsuchida, Y. Ohno, K. Maeda, 2012 .

Polarized Photoluminescence from Partial Dislocations in 4H-SiC

H. Tsuchida, K. Itoh, K. Maeda, 2014 .

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

H. Tsuchida, T. Kimoto, T. Miyazawa, 2015 .

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method

H. Tsuchida, I. Kamata, N. Ohya, 2023, Solid State Phenomena.

Growth of thick and low‐doped 4H‐SiC epitaxial layers in a vertical radiant‐heating VPE reactor

H. Tsuchida, I. Kamata, K. Izumi, 2001 .

Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation

H. Tsuchida, K. Asano, A. Tanaka, 2012, IEEE Transactions on Electron Devices.

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

T. Kamiya, H. Tsuchida, T. Ohshima, 2015 .

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

H. Tsuchida, T. Ohshima, N. Iwamoto, 2013 .

Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles

H. Tsuchida, T. Ohshima, N. Iwamoto, 2012, COMMAD 2012.

Annealing Effects on Charge Collection Efficiency of an Electron-Irradiated 4 H-SiC Particle Detector

H. Tsuchida, T. Ohshima, N. Iwamoto, 2013 .

Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation

H. Tsuchida, I. Kamata, K. Izumi, 2001 .

Influence of 4H–SiC Growth Conditions on Micropipe Dissociation

H. Tsuchida, I. Kamata, K. Izumi, 2002 .

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

H. Tsuchida, I. Kamata, K. Izumi, 2002 .

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

H. Tsuchida, I. Kamata, T. Jikimoto, 2000 .

Epitaxial Growth of a Low-Doped 4H–SiC Layer on a Micropipe Stop Layer

H. Tsuchida, I. Kamata, K. Izumi, 2002 .

Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation

H. Tsuchida, S. Asada, K. Murata, 2023, IEEE Transactions on Electron Devices.

Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers

H. Tsuchida, T. Ohshima, L. Storasta, 2008 .

Developing Technologies of SiC Gas Source Growth Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method

H. Tsuchida, I. Kamata, N. Ohya, 2019 .

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

H. Tsuchida, T. Ohshima, T. Makino, 2016 .

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

H. Tsuchida, T. Ohshima, T. Makino, 2015 .

Heavy-Ion-Induced Charge Enhancement in 4 H-SiC Schottky Barrier Diodes

H. Tsuchida, T. Ohshima, T. Makino, 2013 .

Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method

H. Tsuchida, I. Kamata, N. Hoshino, 2022, Journal of Crystal Growth.

Deflection of threading dislocations in patterned 4H–SiC epitaxial growth

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

H. Tsuchida, I. Kamata, H. Okumura, 2002 .

Fabrication of 4H-SiC PiN diodes on substrate grown by HTCVD method

H. Tsuchida, K. Murata, Y. Tokuda, 2019, Japanese Journal of Applied Physics.

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

H. Tsuchida, J. Kojima, Naohiro Sugiyama, 2015 .

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

H. Tsuchida, I. Kamata, K. Izumi, 2000 .

4H-SiC Epitaxial Growth for High-Power Devices

H. Tsuchida, I. Kamata, T. Jikimoto, 2003 .

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

H. Tsuchida, I. Kamata, Y. Sugawara, 2005 .

X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC

H. Tsuchida, I. Kamata, R. Tanuma, 2012 .

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2018, Materials Science Forum.

Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, 2002 .

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping

H. Tsuchida, T. Miyazawa, T. Tawara, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes

H. Tsuchida, T. Miyazawa, T. Tawara, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

H. Tsuchida, I. Kamata, T. Miyazawa, 2010 .

Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers

H. Tsuchida, T. Miyazawa, Masahiko Ito, 2010 .

The structure of 3C-SiC carbonized layer on Si substrate

H. Tsuchida, I. Kamata, K. Izumi, 1998 .

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope

H. Tsuchida, I. Kamata, Naoto Noguchi, 2019, Materials Science Forum.

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

H. Tsuchida, I. Kamata, M. Nagano, 2008 .

Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, M. Nagano, 2013 .

Simulation of Threading Dislocation Images in X-ray Topographs of Silicon Carbide Homo-Epilayers

H. Tsuchida, I. Kamata, M. Dudley, 2005 .

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, M. Nagano, 2013 .

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, Xuan Zhang, 2012 .

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

H. Tsuchida, I. Kamata, Masahiko Ito, 2009 .

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions

H. Tsuchida, I. Kamata, T. Tawara, 2004 .

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

H. Tsuchida, I. Kamata, T. Jikimoto, 2005 .

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, M. Nagano, 2014 .

Si–H Bonds on the 6H–SiC(0001) Surface after H2 Annealing

H. Tsuchida, Isaho Kamata Isaho Kamata, Kunikazu Izumi Kunikazu Izumi, 1997 .

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

H. Tsuchida, L. Storasta, 2007 .

Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation

H. Tsuchida, T. Kimoto, J. Suda, 2017, Journal of Electronic Materials.

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing

H. Tsuchida, T. Kimoto, J. Suda, 2014 .

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

H. Tsuchida, I. Kamata, T. Tawara, 2005 .

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

H. Tsuchida, I. Kamata, K. Ueno, 2002 .

Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor

H. Tsuchida, K. Murata, Hajime Tanaka, 2023, Journal of Applied Physics.

Direct nitridation of 4H-SiC(0001) surface by H2/N2 treatment

H. Tsuchida, K. Murata, T. Fujii, 2020, Applied Physics Express.

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

H. Tsuchida, I. Kamata, Y. Sugawara, 2006 .

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

H. Tsuchida, T. Miyazawa, Xuan Zhang, 2012 .

Infrared spectroscopy of hydrides on the 6H-SiC surface

H. Tsuchida, I. Kamata, K. Izumi, 1997 .

Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

H. Tsuchida, I. Kamata, L. Storasta, 2007 .

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

H. Tsuchida, L. Storasta, Masahiko Ito, 2008 .

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

H. Tsuchida, I. Kamata, Tomonori Nakamura, 2006 .

Improved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC Surfaces

H. Tsuchida, J. Rozen, M. Nagano, 2012 .

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

H. Tsuchida, K. Fukuda, T. Hatakeyama, 2009 .

Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2

H. Tsuchida, Y. Sugawara, K. Nakayama, 2008 .

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

H. Tsuchida, I. Kamata, T. Jikimoto, 2005 .

A 4.15 kV 9.07-m cm 4H–SiC Schottky-Barrier Diode Using Mo Contact Annealed at High Temperature

H. Tsuchida, I. Kamata, T. Jikimoto, 2022 .

Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

H. Tsuchida, T. Tawara, M. Kato, 2018, Materials Science Forum.

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

H. Tsuchida, I. Kamata, Tomonori Nakamura, 2006 .

SiC Crystals: — Advances in 4H-SiC Crystal Growth Technology —@@@—4H-SiC結晶成長技術の進展—

H. Tsuchida, 2017 .

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

T. Satoh, H. Tsuchida, T. Ohshima, 2020 .