R. Lindsay

发表

Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

H. Bender, A. Lauwers, A. Steegen, 2001 .

Design of high performance PFETs with strained si channel and laser anneal

J. Holt, D. Schepis, R. Amos, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Transient enhanced diffusion of Boron in Si

S. Decoutere, R. Lindsay, P. Stolk, 2002 .

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, M. Khare, D. Tekleab, 2008, 2008 Symposium on VLSI Technology.

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

R. Lindsay, D. Ahlgren, E. Zhao, 2008, IEEE Transactions on Device and Materials Reliability.

Ni silicide morphology on small features

Karen Maex, Jorge Kittl, Muriel de Potter de ten Broeck, 2004 .

A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS

J. Kittl, A. Lauwers, R. Lindsay, 2003 .

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

Karen Maex, Christa Vrancken, Annick Lauwers, 2002 .

Comparative study of Ni-silicide and Co-silicide for sub 0.25-mm technologies

H. Bender, A. Lauwers, M. Potter, 1999 .

Competitive and cost effective high-k based 28nm CMOS technology for low power applications

J. Bonnouvrier, R. Augur, F. Arnaud, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

R. Lindsay, D. Ahlgren, E. Zhao, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.

A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

O. Richard, R. Lindsay, R. Loo, 2004 .

Ni-based silicides: material issues for advanced CMOS applications

O. Richard, J. Kittl, J. Lisoni, 2003 .

Ni- and Co-based silicides for advanced CMOS applications

J. Kittl, A. Lauwers, M. Potter, 2003 .

Reaction of Ni and Si0.8Ge0.2

J. Kittl, A. Lauwers, M. Potter, 2004 .

Ni based silicides for 45 nm CMOS and beyond

J. Kittl, A. Lauwers, M. Potter, 2004 .

Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

R. Lindsay, K. Maex, B. Pawlak, 2006 .

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

O. Richard, A. Smith, R. Lindsay, 2004 .

Optimized thermal processing for Ti-capped CoSi 2 for 0.13 mm technology

Karen Maex, Christa Vrancken, Annick Lauwers, 2001 .

The effect of ramp rate: Short process time and partial reactions on cobalt and nickel silicide formation

A. Lauwers, R. Lindsay, E. Granneman, 2004 .

Applications of Ni-based silicides to 45 nm CMOS and beyond

G. Pourtois, J. Kittl, A. Lauwers, 2004 .

Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies

A. Lauwers, A. Steegen, M. Potter, 2001 .

Low temperature spike anneal for Ni-silicide formation

J. Kittl, A. Lauwers, M. Potter, 2004 .

Silicides for 65nm CMOS and beyond

O. Richard, J. Kittl, J. Lisoni, 2003 .

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

Karen Maex, Wilfried Vandervorst, Jorge Kittl, 2004 .

Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices

A. Veloso, M. Jurczak, A. Lauwers, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions

M. Jurczak, M. Kaiser, R. Lindsay, 2004 .

An (un)solvable problem in SIMS: B-interfacial profiling

R. Lindsay, R. Loo, M. Caymax, 2003 .

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

K.-H. Bach, A. Jain, M. Eller, 2007, IEEE Transactions on Semiconductor Manufacturing.