A. Agarwal

发表

GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

H. Morkoç, M. Lin, S. Strite, 1993 .

10 kV, 5A 4H-SiC Power DMOSFET

A. Agarwal, S. Ryu, S. Krishnaswami, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems

A. Agarwal, B. Hull, R. Callanan, 2009, 2009 IEEE Energy Conversion Congress and Exposition.

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, IEEE Electron Device Letters.

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

A. Agarwal, A. Huang, Tiefu Zhao, 2007, 2007 IEEE Industry Applications Annual Meeting.

SiC Power Devices for Microgrids

A. Agarwal, S. Ryu, R. Callanan, 2010, IEEE Transactions on Power Electronics.

10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

A. Agarwal, A. Hefner, M. Das, 2011, 2011 IEEE Electric Ship Technologies Symposium.

Performance Evaluation of SiC MOSFET/BJT/Schottky Diode in A 1MHz Single Phase PFC

A. Agarwal, A. Huang, S. Krishnaswami, 2007, APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition.

10-kV, 123-mOcm2 4H-SiC power DMOSFETs

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Sei-Hyung Ryu, Qingchun Zhang, B. Hull, 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

SiC power devices for Smart Grid systems

A. Agarwal, R. Callanan, M. Das, 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC

A. Agarwal, R. Callanan, M. Das, 2008, IEEE Electron Device Letters.

Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices

A. Agarwal, J. Palmour, M. Levinshtein, 2011 .

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

M. Shur, A. Agarwal, J. Palmour, 2012 .

Temperature dependence of turn-on processes in 4H–SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2001 .

Current rise time constants in switch-on process of SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2002 .

Power bipolar devices based on silicon carbide

A. Agarwal, J. Palmour, M. Levinshtein, 2005 .

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

A. Agarwal, J. Richmond, J. Palmour, 2010 .

Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs

A. Agarwal, Qingchun Zhang, 2009 .

SiC power-switching devices-the second electronics revolution?

A. Agarwal, J. Cooper, 2002, Proc. IEEE.

Design and Fabrications of High Voltage IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

A. Agarwal, J. Palmour, J. Sumakeris, 2008 .

Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

A. Agarwal, S. Krishnaswami, J. Palmour, 2006, IEEE Transactions on Electron Devices.

Design and Characterization of High-Voltage 4H-SiC p-IGBTs

A. Agarwal, A. Huang, S. Ryu, 2008, IEEE Transactions on Electron Devices.

A unified silicon/silicon carbide IGBT model

H. Mantooth, A. Agarwal, E. Santi, 2012, Applied Power Electronics Conference.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

M. Shur, A. Agarwal, S. Ryu, 2009 .

Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor

M. E. Levinshtein, A. Agarwal, J. Palmour, 2001 .

15-kV single-bias all-optical ETO thyristor

A. Agarwal, S. Mazumder, L. Cheng, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Advanced HF SiC MOS devices

A. Agarwal, S. Ryu, B. Hull, 2009, 2009 13th European Conference on Power Electronics and Applications.

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET

A. Agarwal, M. Das, S. Bhattacharya, 2011, 2011 IEEE Energy Conversion Congress and Exposition.

Advances in silicon carbide processing and applications

Stephen E. Saddow, Anant Agarwal, S. Saddow, 2004 .

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

DV/DT immunity and recovery time capability of 1.0 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

Development and pulse evaluation of silicon carbide SGTO modules

A. Agarwal, Qingchun Zhang, C. Scozzie, 2010, 2010 IEEE International Power Modulator and High Voltage Conference.

Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2009, 2009 IEEE Pulsed Power Conference.

Pulse evaluation of high voltage SIC diodes

A. Agarwal, B. Hull, S. Bayne, 2007, IEEE International Pulsed Power Conference.

High-frequency design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter

Subhashish Bhattacharya, Seunghun Baek, Arun Kadavelugu, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2002 .

Progress in Silicon Carbide Power Devices

Brett Hull, John Palmour, Mrinal Das, 2006, 2006 64th Device Research Conference.

Performance comparison of 1200V Silicon and SiC devices for UPS application

A. Agarwal, M. Das, S. Bhattacharya, 2010, IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

Anant K. Agarwal, J. Neil Merrett, Scott Leslie, 2010 .

Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications

S. Bhattacharya, K. Hatua, Sei-Hyung Ryu, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

400kHz, 300W SiC BJT Based High Power Density PFC Converter

A. Agarwal, Z. Du, A. Huang, 2006 .

SiC electronics

S. Sriram, A.W. Morse, P.M. Esker, 1996, International Electron Devices Meeting. Technical Digest.

4H-SiC power devices for use in power electronic motor control

Anant K. Agarwal, S. Seshadri, David C. Sheridan, 1998 .

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

A. Agarwal, D. Sheridan, J. Casady, 1997 .

1.1 kV 4H-SiC power UMOSFETs

A. Agarwal, M. White, J. Casady, 1997, IEEE Electron Device Letters.

Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

A. Agarwal, L. Rowland, A.K. Agarwal, 1997, IEEE Electron Device Letters.

700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)

S. Seshadri, A. Agarwal, J. Casady, 1997, IEEE Electron Device Letters.

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

A. Agarwal, S. Ryu, J. Palmour, 2000 .

1800 V NPN bipolar junction transistors in 4H-SiC

R. Singh, A. Agarwal, S. Ryu, 2001, IEEE Electron Device Letters.

4H-SiC DMOSFETs for High Speed Switching Applications

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2005 .

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Bayne, C. Scozzie, S. Balachandran, 2005, IEEE Electron Device Letters.

Power amplification in UHF band using SiC RF power BJTs

A. Agarwal, J. Palmour, C. Capell, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Novel packaging and high-current pulse-switching of 1.0 cm2 SiC SGTOs

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 Lester Eastman Conference on High Performance Devices (LEC).

A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

A. Agarwal, M. White, A. Burk, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .

Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

A. Agarwal, T. Chow, C. Scozzie, 2006 .

1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

A. Agarwal, T. Chow, C. Scozzie, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs

A. Agarwal, H. Kosai, J. Scofield, 2007 .

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Development of 10 kV 4H-SiC Power DMOSFETs

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2004 .

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

A. Agarwal, S. Ryu, M. Das, 2007 .

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006 .

Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al 2 O 3 Gate Dielectric

S. Dhar, A. Agarwal, S. Ryu, 2009 .

High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs

A. Agarwal, S. Haney, 2008 .

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

A. Agarwal, S. Ryu, J. Palmour, 2004 .

900 V DMOS and 1100 V UMOS 4H-SiC power FETs

A. Agarwal, J. Casady, L. Rowland, 1997, 1997 55th Annual Device Research Conference Digest.

Large area 4H-SiC power MOSFETs

Anant K. Agarwal, Sei-Hyung Ryu, John W. Palmour, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

1400 V 4H-SiC Power MOSFETs

A. Agarwal, J. Casady, L. Rowland, 1997 .

4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

A. Agarwal, T. Chow, C. Scozzie, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Low frequency noise in 4H-SiC BJTs

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

A. Agarwal, T. Chow, C. Scozzie, 2005, IEEE Electron Device Letters.

The fast neutron response of silicon carbide semiconductor radiation detectors

A. Agarwal, S. Ryu, A. Dulloo, 2004, IEEE Symposium Conference Record Nuclear Science 2004..

Low-dose nitrogen implants in 6H–silicon carbide

A. Agarwal, N. Saks, S. Mani, 2000 .

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

A. Agarwal, M. Das, J. Palmour, 2004 .

New results on electron injection, hole injection, and trapping in MONOS nonvolatile memory devices

A. Agarwal, M. White, 1985, IEEE Transactions on Electron Devices.

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

A. Agarwal, M. White, J. Fan, 2022, Materials.

Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

A. Agarwal, M. Dudley, R. Stahlbush, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Transient processes in high-voltage silicon carbide bipolar-junction transistors

A. Agarwal, J. Palmour, M. Levinshtein, 2013 .

Silicon carbide temperature-tolerant power electronics for dual use systems applications

J. F. Perkins, A. Agarwal, J. Casady, 1997, IECEC-97 Proceedings of the Thirty-Second Intersociety Energy Conversion Engineering Conference (Cat. No.97CH6203).

On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 1998 .

Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC

A. Agarwal, S. Seshadri, G. Eldridge, 1998 .

Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

M. E. Levinshtein, M. Shur, A. Agarwal, 2013 .

On the nonequilibrium statistics and small signal admittance of Si‐SiO2 interface traps in the deep‐depleted gated‐diode structure

A. Agarwal, M. White, 1984 .

SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension

Alex Q. Huang, Lin Cheng, B. Jayant Baliga, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Static and dynamic characterization of silicon carbide bipolar junction transistor

Alex Q. Huang, Anant K. Agarwal, Hongfang Wang, 2003, IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468).

Characterization and modeling of 4H-SiC power BJTs

A. Agarwal, A. Huang, S. Krishnaswami, 2005, 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005..

The critical charge density in high voltage 4H-SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2003 .

1800 V, 3.8 A bipolar junction transistors in 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

1000 V 4H-SiC gate turn off (GTO) thyristor

A. Agarwal, J. Casady, R. Siergiej, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Silicon carbide power MOSFET technology

A. Agarwal, D. Sheridan, J. Casady, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Sei-Hyung Ryu, A. Agarwal, S. Ryu, 2007, IEEE Electron Device Letters.

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

A. Agarwal, M. Al‐Jassim, N. Mahadik, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

Adam J. Morgan, A. Agarwal, V. Veliadis, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Defects in 4H-SiC epilayers affecting device yield and reliability

A. Agarwal, B. Odekirk, N. Mahadik, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Body Diode Reliability of Commercial SiC Power MOSFETs

A. Agarwal, M. White, Minseok Kang, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

A. Agarwal, R. Stahlbush, Q. C. Zhang, 2012 .

Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes

A. Agarwal, M. Das, J. Palmour, 2011 .

Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

M. Shur, A. Agarwal, M. Das, 2011, 2011 21st International Conference on Noise and Fluctuations.

Some Critical Materials and Processing Issues in SiC Power Devices

A. Agarwal, S. Haney, 2008 .

Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

A. Agarwal, S. Ryu, Qingchun Zhang, 2008 .

Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes

A. Agarwal, M. Das, Qingchun Zhang, 2008 .

A Case for High Temperature, High Voltage SiC Bipolar Devices

A. Agarwal, 2007 .

BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors

A. Agarwal, T. Chow, S. Scozzie, 2005 .

Analysis of SiC BJT RBSOA

Bin Chen, A. Agarwal, A. Huang, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance

Adam J. Morgan, A. Agarwal, A. Lelis, 2020, IEEE Transactions on Electron Devices.

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC

M. E. Levinshtein, A. Agarwal, S. Ryu, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

The critical charge concept for 4H-SiC-based thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2003 .

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Emitter Size Effect in 4H-SiC BJT

A. Agarwal, A. Huang, S. Krishnaswami, 2006, 2006 CES/IEEE 5th International Power Electronics and Motion Control Conference.

High Voltage 4H-SiC Epitaxial Emitter BJTs using a Self-aligned Selectively Re-grown Base Contact

A. Agarwal, T. Chow, P. Losee, 2006, 2006 64th Device Research Conference.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

A. Agarwal, T. Chow, S. Ryu, 2005 .

Forward Active and Blocking Performance of 4H-SiC Bipolar Junction Transistors

A. Agarwal, T. Chow, S. Balachandran, 2005 .

SiC BJT Technology for Power Switching and RF Applications

A. Agarwal, T. Chow, S. Ryu, 2004 .

Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications

R. Gutmann, A. Agarwal, P. Losee, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

SiC BJT's for High Power Switching and RF Applications

A. Agarwal, S. Ryu, J. Richmond, 2002 .

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

M. Shur, A. Agarwal, S. Ryu, 2001 .

4H-SiC Gate Turn-Off (GTO) Thyristor Development

A. Agarwal, J. Casady, R. Siergiej, 1997 .

Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT

Qingchun Zhang, A. Agarwal, A. Huang, 2008, IEEE Transactions on Electron Devices.

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

An Update on High Voltage SiC Power Devices

A. Agarwal, J. Palmour, 2011 .

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

A. Agarwal, J. Palmour, M. O'loughlin, 2013 .

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2006 .

Reliability of High Voltage 4H-SiC MOSFET Devices

A. Agarwal, J. Scofield, S. Ryu, 2006 .

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

Hadis Morkoç, Ankur Agarwal, Walter R. L. Lambrecht, 1994 .

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

A. Agarwal, P. McMarr, H. Hughes, 2010 .

Advances in SiC materials and devices : an industrial point of view

S. Sriram, Anant K. Agarwal, R. R. Siergiej, 1999 .

Effect of M-C (M=Mo, Mn, and Cr) Atomic Pairs on Creep Properties of Fe-M-C Ternary Alloys

A. Agarwal, H. Kushima, H. Onodera, 1999 .

The Road to a Robust and Affordable SiC Power MOSFET Technology

A. Agarwal, M. White, S. Nayak, 2021, Energies.

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

A. Agarwal, Sei-Hyung Ryu, A. Dulloo, 2006, IEEE Transactions on Nuclear Science.

Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices

T S Sudarshan, Qingchun Zhang, A. Agarwal, 2010, IEEE Transactions on Electron Devices.

Status and prospects for SiC power MOSFETs

M. Melloch, A. Agarwal, J. Cooper, 2002 .

Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

Raphael Tsu, Ankur Agarwal, Angus Rockett, 1993 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs

A. Agarwal, W. Lu, S. Nayak, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

S. Dhar, A. Agarwal, K. Cheung, 2010 .

Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

Dongyoung Kim, Robert Kaplar, Woongje Sung, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Design Strategies for Rugged SiC Power Devices

Susanna Yu, Tianshi Liu, Arash Salemi, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time

A. Agarwal, Yue Zhang, Boxue Hu, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Non-isothermal simulation of SiC DMOSFET short circuit capability

A. Agarwal, S. Nayak, S. Ganguly, 2022, Japanese Journal of Applied Physics.

A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

Sei-Hyung Ryu, S. Dhar, A. Agarwal, 2010, IEEE Transactions on Electron Devices.

Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs

A. Agarwal, M. White, D. Sheridan, 2021, IEEE Journal of the Electron Devices Society.

Status of SiC Power Devices and Manufacturing Issues

Anant K. Agarwal, Sei-Hyung Ryu, A. Agarwal, 2006 .

Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs

A. Agarwal, S. Mani, N.S. Saks, 2000 .

10 kV SiC MOSFET Based Boost Converter

Jun Wang, Tiefu Zhao, Anant Agarwal, 2008, 2008 IEEE Industry Applications Society Annual Meeting.

Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes

Anant Agarwal, Tangali S. Sudarshan, Fatima Husna, 2008, Microelectron. Reliab..

Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors

Anant Agarwal, Robert M. Kennedy, Tangali S. Sudarshan, 2009, Microelectron. Reliab..

Chapter 5 SiC for Applications in High-Power Electronics

R. C. Clarke, A. Agarwal, J. Casady, 1998 .

4.5 kV 120A SICGT and Its PWM Three Phase Inverter Operation of 100kVA class

Y. Sugawara, S. Ogata, Y. Miyanagi, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

Y. Sugawara, S. Ogata, K. Asano, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

15 kV SiC IGBT based three-phase three-level modular-leg power converter

Subhashish Bhattacharya, David Grider, Arun Kadavelugu, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

Subhashish Bhattacharya, David Grider, Arun Kadavelugu, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

Current Saturation Characteristics and Single-Pulse Short-Circuit Tests of Commercial SiC MOSFETs

A. Agarwal, Jin Wang, Boxue Hu, 2019, 2019 IEEE Energy Conversion Congress and Exposition (ECCE).

SiC and GaN wide bandgap semiconductor materials and devices

S. Sriram, Anant K. Agarwal, R. C. Clarke, 1999 .

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Anant K. Agarwal, Veena Misra, Sei-Hyung Ryu, 2009 .

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs

Shengnan Zhu, Arash Salemi, Anant K. Agarwal, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

A. Agarwal, V. Misra, D. Lichtenwalner, 2013 .

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .

SiC Power Devices – An Overview

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures

A. Agarwal, S. Krishnaswami, M. Das, 2004 .

Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth

H. Morkoç, S. Strite, A. Agarwal, 1992 .

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

A. Agarwal, J. Palmour, M. O'loughlin, 2014, Journal of Electronic Materials.

Status of SiC power devices at Northrop Grumman

A. Agarwal, J. Casady, A. Burk, 1999 .

2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

Sei-Hyung Ryu, S. Krishnaswami, J. Richmond, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Characterization, Modeling, and Application of 10-kV SiC MOSFET

Jun Wang, Jun Li, Tiefu Zhao, 2008, IEEE Transactions on Electron Devices.

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

3.3-kV SiC MOSFET Performance and Short-Circuit Capability

A. Agarwal, Jin Wang, S. Atcitty, 2020, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Plasma-assisted MBE of GaN and AlGaN on 6H SiC(0001)

A. Agarwal, R. Messham, L. Rowland, 1995 .

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Anant K. Agarwal, Marko J. Tadjer, Karl D. Hobart, 2009 .

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

M. Shur, S. Dhar, A. Agarwal, 2012 .

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

M. Shur, S. Dhar, A. Agarwal, 2011 .

Low frequency noise in 6H-SiC MOSFET's

A. Agarwal, J. Casady, R. Siergiej, 1995, IEEE Electron Device Letters.

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Scott Allen, Lin Cheng, Anant K. Agarwal, 2015 .

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

S. Dhar, A. Agarwal, J. Palmour, 2014 .

4.5 kV 60A SICGT and its Half Bridge Inverter Operation of 20kVA Class

Y. Sugawara, S. Ogata, Y. Miyanagi, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

Adam J. Morgan, A. Agarwal, M. White, 2021, 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS).

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

Adam J. Morgan, A. Agarwal, Bongmook Lee, 2022, 2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS).

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Adam J. Morgan, A. Agarwal, Bongmook Lee, 2021, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

MMC-Based High Gain Solid-State Transformers for Energy Storage Applications

A. Agarwal, Jin Wang, Boxue Hu, 2021, Applied Power Electronics Conference.

Low-dose aluminum and boron implants in 4H and 6H silicon carbide

A. Agarwal, S. Ryu, J. Palmour, 2001 .

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

A. Agarwal, B. Hull, J. Sumakeris, 2008 .

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Lin Cheng, Anant K. Agarwal, Sei-Hyung Ryu, 2012, Journal of Electronic Materials.

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

The benefits and current progress of SiC SGTOs for pulse power applications

A. Agarwal, R. Callanan, C. Scozzie, 2009, 2009 International Semiconductor Device Research Symposium.

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Anant K. Agarwal, S. Dhar, A. Agarwal, 2012 .

4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications

A. Agarwal, J. Casady, S. Seshadri, 2000 .

Low frequency noise in 4H-SiC BJTs

Anant K. Agarwal, Michael E. Levinshtein, John W. Palmour, 2004, SPIE International Symposium on Fluctuations and Noise.

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2000 .

In-depth analysis of SiC GTO thyristor performance using numerical simulations

A. Agarwal, S. Seshadri, K. Jones, 2000 .

New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with R diff, on of 26 mΩ·cm 2 at 25°C

A. Agarwal, A. Huang, S. Ryu, 2007, ISPSD 2007.

Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

A. Agarwal, M. Das, J. Palmour, 2011 .

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

A. Agarwal, M. Das, J. Palmour, 2011 .

Experimental Determination of Interface Trap Density and Fixed Positive Oxide charge in Commercial 4H-SiC Power MOSFETs

Susanna Yu, Anant K. Agarwal, Marvin H. White, 2021, IEEE Access.

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs

Marvin H. White, Susanna Yu, Tianshi Liu, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

An overview of Cree silicon carbide power devices

S. Krishnaswami, S.-H. Ryu, J. Richmond, 2004, Power Electronics in Transportation (IEEE Cat. No.04TH8756).

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs

A. Agarwal, M. White, Shengnan Zhu, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs

Marvin H. White, Susanna Yu, Tianshi Liu, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2008 .

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A. Agarwal, M. White, D. Sheridan, 2022, Materials.

3300-V SiC MOSFET Short-Circuit Reliability and Protection

A. Agarwal, Jin Wang, Xintong Lyu, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

A. Agarwal, M. White, Shengnan Zhu, 2022, IEEE Workshop on Wide Bandgap Power Devices and Applications.

Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs

A. Agarwal, M. White, Shengnan Zhu, 2021, IEEE Workshop on Wide Bandgap Power Devices and Applications.

Bias-Induced Threshold Voltage Instability and Interface Trap Density Extraction of 4H-SiC MOSFETs

A. Agarwal, M. White, Minseok Kang, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs

A. Agarwal, M. White, Minseok Kang, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

4H–SiC BJTs with current gain of 110

Anant K. Agarwal, Charles Scozzie, Qingchun Zhang, 2008 .

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs

A. Agarwal, M. White, D. Sheridan, 2021, Solid State Electronics Letters.

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs

A. Agarwal, M. White, Chingchi Chen, 2023, IEEE International Reliability Physics Symposium.

A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies

A. Agarwal, M. White, Arash Salemi, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

S. Krishnaswami, J. Richmond, A. Agarwal, 2006, IEEE Transactions on Industry Applications.

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel Ivanov, Anant K. Agarwal, Sei-Hyung Ryu, 2002 .

Optical Switch-On of Silicon Carbide Thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources

A. Agarwal, J.C. Balda, H.A. Mantooth, 2009, IEEE Transactions on Power Electronics.

Power MOSFETs in 4H-SiC: Device Design and Technology

S. Ryu, A. Agarwal, S. Ryu, 2004 .

3300 V, 30 A 4H-SiC power DMOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC

A. Agarwal, Sei-Hyung Ryu, J. Palmour, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

A. Agarwal, J. Richmond, J. Palmour, 2002, IEEE Electron Device Letters.

Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures

A. Agarwal, M. White, A. Burk, 1996 .

A 475-V high-voltage 6H-SiC lateral MOSFET

A. Agarwal, N. Saks, S. Mani, 1999, IEEE Electron Device Letters.

Analysis of Operational Degradation of SIC BJT Characteristics

Qingchun Zhang, A. Agarwal, A. Huang, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Design of dual use, high efficiency, 4H-SiC Schottky and MPS diodes

J. W. Palmour, A. Agarwal, J. Palmour, 2000, Collection of Technical Papers. 35th Intersociety Energy Conversion Engineering Conference and Exhibit (IECEC) (Cat. No.00CH37022).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

SiC for Microwave Power Transistors

S. Sriram, Anant K. Agarwal, R. R. Siergiej, 1997 .

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC

A. Agarwal, A. Bolotnikov, P. Muzykov, 2009 .

Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .