A. Salvador

H. Morkoç, A. Salvador, M. Smith, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

High-transconductance GaN MODFETs

H. Morkoç, A. Salvador, O. Aktas, 1995, Proceedings of International Electron Devices Meeting.

Field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure: A subpicosecond time-resolved Raman probe

H. Morkoç, A. Salvador, D. Ferry, 1997 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .

Excitonic recombination in GaN grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1995 .

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1996 .

Porous silicon optical template for determination of chromatic dispersion of transparent liquid mixture

A. Salvador, A. Somintac, Maria Angela B. Faustino, 2017 .

Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy

Lorenzo P. Lopez, A. Salvador, E. Estacio, 2016 .

Fabrication and Characterization of Porous Silicon for Photonic Applications

A. Salvador, A. Somintac, N. Cabello, 2013 .

Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating.

M. Tani, H. Kitahara, A. Salvador, 2016, Optics express.

A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts

M. Tani, H. Kitahara, A. Salvador, 2020, Scientific Reports.

Graphene transfer passivates GaAs

A. Salvador, E. Estacio, J. D. Vasquez, 2020 .

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

A. Salvador, E. Estacio, A. Somintac, 2021, Journal of Materials Science: Materials in Electronics.

Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors

M. Tani, H. Kitahara, A. Salvador, 2019, Journal of Physics D: Applied Physics.

Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

M. Tani, A. Salvador, M. Hangyo, 2011 .

Growth of gallium arsenide on hydrogen passivated Si with low‐temperature treatment (∼600 °C)

H. Morkoç, A. Salvador, S. Fang, 1991 .

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy.

A. Salvador, C. Saloma, Vernon Julius Cemine, 2007, Applied optics.

Observation of the Quantum-Confined Stark Effect in a GaAs/AlGaAs P-I-N Diode by Room Temperature Photocurrent Spectroscopy

A. Salvador, M. Bailon, E. Estacio, 2007 .

Formation mechanism and relative stability of the { 112 ¯ 0 } stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

H. Morkoç, A. Salvador, P. Ruterana, 1999 .

Al-doped ZnO and N-doped CuxO thermoelectric thin films for self-powering integrated devices

A. Salvador, E. A. Mondarte, A. Somintac, 2016 .

Influence of As4 flux on the growth kinetics, structure, and optical properties of InAs∕GaAs quantum dots

A. Salvador, C. Boothroyd, E. Philpott, 2007 .

Terahertz emission enhancement in low-temperature-grown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries

M. Tani, A. Salvador, E. Estacio, 2014 .

Optimization of anodized aluminum oxide pore morphology for GaAs nanowire growth

A. Salvador, R. Dizon, A. Somintac, 2011 .

Tunable Photonic Crystals Based on Electrochemically Etched Porous Silicon

A. Salvador, A. Somintac, Maria Angela B. Faustino, 2014 .

Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

A. Salvador, R. Sarmiento, M. Bailon, 2002 .

Interplay of Zn(OAc)2 concentration, morphology, and emission in hydrothermal-grown ZnO nanostructures

A. Salvador, K. Yamanoi, Toshihiko Shimizu, 2021, Journal of Crystal Growth.

Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

A. Salvador, E. Estacio, A. Somintac, 2004 .

Metal-Coated <100>-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

M. Tani, H. Kitahara, A. Salvador, 2018 .

Photoluminescence and terahertz time-domain spectroscopy of MBE-grown single-layered InAs/GaAs quantum dots

Lorenzo P. Lopez, A. Salvador, E. Estacio, 2018, 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

A. Salvador, E. Estacio, A. Somintac, 2015 .

Structural and optical characterization and scintillator application of hydrothermal-grown ZnO microrods

A. Salvador, T. Fukuda, K. Yamanoi, 2017 .

Gamma-ray irradiation effects on the optical properties of bulk ZnO single crystals

A. Salvador, T. Fukuda, K. Yamanoi, 2015 .

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

M. Tani, A. Salvador, V. Mag-usara, 2018 .

Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

M. Tani, A. Salvador, E. Estacio, 2015 .

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

H. Morkoç, A. Salvador, M. Khan, 1997 .

Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy

H. Morkoç, A. Salvador, W. Kim, 1997 .

Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

A. Salvador, W. Kim, A. Botchkarev, 1997 .

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

H. Morkoç, A. Salvador, J. Lin, 1997 .

Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1998 .

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1997 .

Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Spray Pyrolysis Deposition of Al‐Doped ZnO Thin Films for Potential Picosecond Extreme Ultraviolet Scintillator Applications

A. Salvador, K. Yamanoi, Toshihiko Shimizu, 2020, physica status solidi (b).

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

Proposed explanation of the anomalous doping characteristics of III–V nitrides

H. Morkoç, A. Salvador, S. Mohammad, 1997 .

Nanostructured CuO thin film deposited on stainless steel using spray pyrolysis as supercapacitor electrode

A. Salvador, E. Estacio, A. Somintac, 2020, Materials Research Express.

Interband dot-to-well transitions in InAs∕InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy

A. Salvador, V. Mag-usara, E. Estacio, 2008 .

NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Characterization of InxGa1−xP/GaAs grown by gas source molecular‐beam epitaxy (0.35≤x≤0.60) by spectroscopic ellipsometry

H. Morkoç, A. Salvador, M. Klein, 1992 .

An electronic nose using a single graphene FET and machine learning for water, methanol, and ethanol

Yumeng Liu, Yoshihiro Kubota, Albert C. Lin, 2020, Microsystems & nanoengineering.

ALD-RuO2 Functionalized Graphene FET with Distinctive Gas Sensing Patterns

Lorenzo P. Lopez, Liwei Lin, A. Salvador, 2019, 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS).

Structural and Optical Characterization of Electrochemically-etched Porous Silicon

Lorenzo P. Lopez, A. Salvador, A. Somintac, 2016 .

Effect of thin Ge layer on the surface depletion in GaAs

H. Morkoç, S. Strite, A. Salvador, 1990 .

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Hadis Morkoç, Pierre Ruterana, Andrei Botchkarev, 1997 .

Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

H. Morkoç, A. Salvador, J. Gibson, 1997 .

Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

H. Morkoç, A. Salvador, P. Ruterana, 1997 .

Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

H. Morkoç, A. Salvador, P. Ruterana, 1996 .

Defect Microstructure of Thin Wurtzite GaN Films Grown by MBE

H. Morkoç, A. Salvador, David J. Smith, 1995 .

Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy.

M. Tani, A. Salvador, M. Hase, 2016, Optics express.

Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics

H. Morkoç, A. Salvador, S. Mohammad, 1996 .

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

M. Tani, A. Salvador, E. Estacio, 2015, Nanoscale Research Letters.

An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy

W. J. Choyke, H. Morkoç, S. Strite, 1991 .

Electroabsorption studies on GaAs asymmetric coupled quantum wells

H. Morkoç, A. Salvador, M. Unlu, 1990 .

Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Hongxing Jiang, 1996 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

Deep‐center hopping conduction in GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Hydrothermal growth of vertically aligned ZnO nanorods as potential scintillator materials for radiation detectors

Keisuke Kawano, Toshihiko Shimizu, Melvin John F. Empizo, 2018, Journal of Luminescence.

PICOSECOND RAMAN STUDIES OF THE ELECTRON-PHONON INTERACTIONS IN ALXGA1-XAS: NONMONOTONIC DEPENDENCE UPON THE ALLOY COMPOSITION

Hadis Morkoç, David K. Ferry, H. Morkoç, 1998 .

Electron–phonon interactions in the wide band‐gap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures

A. Salvador, Toshihiko Shimizu, N. Sarukura, 2009, 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.

Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields

A. Salvador, E. Estacio, A. Somintac, 2014 .

Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field

M. Tani, A. Salvador, E. Estacio, 2017 .

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Ravindra P. Joshi, Hadis Morkoç, David K. Ferry, 1996 .

Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core–shell nanowires on Si(1 0 0) substrates

A. Salvador, E. Estacio, A. Somintac, 2014 .

True bulk As-antisite defect in GaAs(1 1 0) identified by DFT calculations and probed by STM/STS measurements

M. Tani, A. Salvador, N. Hayazawa, 2020 .

Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Deep level traps and the temperature behavior of the photoluminescence in GaAs/AlGaAs multiple quantum wells grown on off-axis and on-axis substrates

A. Salvador, E. Estacio, A. Somintac, 2013 .

Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates

A. Salvador, R. Sarmiento, A. Somintac, 2007 .

Second order Raman spectroscopy of the wurtzite form of GaN

H. Morkoç, A. Salvador, R. Merlin, 1995 .

Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

J. Chyi, J. M. Cowley, H. Morkoç, 1989 .

GaN based III–V nitrides by molecular beam epitaxy

H. Morkoç, A. Salvador, B. Sverdlov, 1995 .

On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

H. Morkoç, A. Salvador, A. Botchkarev, 1997 .

Non-contact detection of a naturally formed oxide layer on copper metal surface using terahertz time-domain spectroscopy

M. Tani, A. Salvador, V. Mag-usara, 2023, Current Applied Physics.

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Hadis Morkoç, Andrei Botchkarev, B. Sverdlov, 1994 .

Thickness dependence of the spintronic terahertz emission from Ni/Pt bilayer grown on MgO via electron beam deposition

M. Tani, H. Kitahara, A. Salvador, 2021, Applied Physics Express.

Observation of enhanced terahertz emission in two-dimensional metal line arrays on GaAs surfaces

Lorenzo P. Lopez, A. Salvador, Maria Angela Faustino-Lopez, 2020, Japanese Journal of Applied Physics.

Increased terahertz emission from SI-GaAs deposited with sub-wavelength spacing metal line array

Lorenzo P. Lopez, A. Salvador, E. Estacio, 2015, 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Hrem and CBED Studies of Polarity of Nitride Layers with Prismatic Defects Grown Over SiC

A. Salvador, P. Ruterana, G. Nouet, 1997 .

Fabrication of high contrast gratings (HCG) MEMS-tunable 1060 nm VCSELs with 32 nm electrostatic tuning range

John Jairus D. P. Eslit, C. Chang-Hasnain, A. Salvador, 2018 .

Reactive Molecular-Beam Epitaxy for Wurtzite GaN

H. Morkoç, A. Salvador, S. Mohammad, 1997 .

Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures

Lorenzo P. Lopez, A. Salvador, E. Estacio, 2020, Journal of Materials Science: Materials in Electronics.

Enhanced Terahertz Emission and Raman Signal from Silicon Nanopyramids

A. Salvador, E. Estacio, A. Somintac, 2017 .

Observation of picosecond carrier lifetimes in GaAs/AlGaAs single quantum wells grown at 630 °C

A. Salvador, A. Somintac, J. Afalla, 2013 .

Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching

A. Salvador, E. Estacio, A. Somintac, 2013 .

Recombination dynamics of free and localized excitons in GaN/Ga 0.93 Al 0.07 N quantum wells

Hadis Morkoç, Pierre Lefebvre, Won-Seok Kim, 1998 .

Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates

M. Tani, A. Salvador, E. Estacio, 2011, 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology.

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

A. Salvador, Toshihiko Shimizu, N. Sarukura, 2011 .

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

A. Salvador, Toshihiko Shimizu, N. Sarukura, 2010 .

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

Minh Hong Pham, Toshihiko Shimizu, Nobuhiko Sarukura, 2009 .

Development of Resistance-Based pH Sensor Using Zinc Oxide Nanorods.

A. Salvador, E. Estacio, A. Somintac, 2016, Journal of nanoscience and nanotechnology.

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

Confined photocarrier transport in InAs pyramidal quantum dots via terahertz time-domain spectroscopy.

M. Tani, A. Salvador, E. Estacio, 2015, Optics express.