A. Payusov

发表

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2017, LASE.

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

N. Ledentsov, V. Shchukin, Y. Shernyakov, 2017 .

Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

A. Payusov, A. Nadtochiy, S. Mintairov, 2015 .

81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

P. Moser, P. Wolf, G. Larisch, 2011 .

A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm−1 modal gain

Mikhail V. Maximov, Igor L. Krestnikov, A. R. Kovsh, 2008 .

Light Emitting Devices Based on Quantum Well-Dots

Y. Shernyakov, A. Zhukov, A. Payusov, 2020, Applied Sciences.

Multilayer quantum-dot arrays of high bulk density

A. Zhukov, A. Payusov, M. Maximov, 2014 .

Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

Y. Shernyakov, A. Zhukov, A. Payusov, 2013 .

A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

Y. Shernyakov, A. Zhukov, A. Kovsh, 2010 .

Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

A. Payusov, A. Nadtochiy, M. Shvarts, 2016 .

Optical properties of hybrid quantum-confined structures with high absorbance

A. Zhukov, A. Payusov, M. Maximov, 2016 .

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

V. M. Andreev, A. Payusov, A. Nadtochiy, 2016 .

Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Mikhail V. Maximov, A. M. Nadtochiy, A. S. Payusov, 2015 .

99 fJ/(bit$\cdot$ km) Energy to Data-Distance Ratio at 17 Gb/s Across 1 km of Multimode Optical Fiber With 850-nm Single-Mode VCSELs

P. Moser, P. Wolf, G. Larisch, 2012, IEEE Photonics Technology Letters.

Energy efficient 850 nm VCSELs operating error-free at 25 Gb/s over multimode optical fiber up to 600 m

P. Moser, P. Wolf, G. Larisch, 2012, 2012 Optical Interconnects Conference.

Transverse mode competition in narrow-ridge diode lasers

Y. Shernyakov, A. Zhukov, M. Kulagina, 2019, Laser Physics.

Effect of carrier localization on performance of coupled large optical cavity diode lasers

Y. Shernyakov, A. Zhukov, A. Payusov, 2018, Journal of Physics: Conference Series.

Edge-emitting lasers based on coupled large optical cavity with high beam stability

Y. Shernyakov, A. Payusov, N. Gordeev, 2017 .

Spatial and spectral mode filtration in phase-locked array of injection lasers with volume Bragg grating

A. Payusov, N. Gordeev, M. Maximov, 2014 .

Radiative characteristics of semiconductor injection lasers based on narrow asymmetric waveguides

Y. Shernyakov, A. Payusov, N. Gordeev, 2013 .

Lateral mode behaviour in diode lasers based on coupled ridges

G. O. Kornyshov, M. Kulagina, A. Payusov, 2020 .

Experimental study of power-limiting factors of 1.1 μm range edge-emitting lasers based on InGaAs/GaAs quantum well-dot nanostructures

G. O. Kornyshov, Y. Shernyakov, A. Zhukov, 2019 .

Generation of Picosecond Pulses by Lasers with Distributed Feedback at a Wavelength of 1064 nm

A. Payusov, E. Portnoi, E. D. Kolykhalova, 2020 .

Temperature-Dependent Characteristics of Single-Mode InAs Submonolayer Quantum-Dot Lasers

D. Bimberg, A. Payusov, D. Arsenijevic, 2012, IEEE Photonics Technology Letters.

A temperature-stable semiconductor laser based on coupled waveguides

N. Ledentsov, V. Shchukin, A. Payusov, 2011 .

High temperature laser diode based on a single sheet of quantum dots

N. Ledentsov, Y. Shernyakov, V. Shchukin, 2015 .

High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm

S. Mikhrin, I. Krestnikov, M. Maksimov, 2008 .

Transverse single-mode edge-emitting lasers based on coupled waveguides.

Y. Shernyakov, M. Kulagina, A. Payusov, 2015, Optics letters.

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

A. P. Vasil’ev, Y. Shernyakov, A. Zhukov, 2018, Semiconductors.

Parasitic Recombination in a Laser with Asymmetric Barrier Layers

A. Zhukov, A. Payusov, M. Maximov, 2020, Semiconductors.

Thermally stable surface-emitting tilted wave laser

V. A. Shchukin, M. M. Kulagina, M. Agustin, 2018, OPTO.

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

A. G. Kuzmenkov, D. Bimberg, V. Ustinov, 2014 .

High-speed VCSELs for energy efficient computer interconnects

Nikolai N. Ledentsov, Alex Mutig, James A. Lott, 2012, Photonics Europe.

Energy-efficient vertical-cavity surface-emitting lasers (VCSELs) for "green" data and computer communication

James A. Lott, Philip Moser, Dieter Bimberg, 2012, Photonics West - Optoelectronic Materials and Devices.

Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers

Alex Mutig, James A. Lott, Philip Moser, 2010 .

81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

P. Moser, P. Wolf, G. Larisch, 2011 .

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

A. Payusov, N. Gordeev, M. Maximov, 2019, Semiconductors.

Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots

Y. Shernyakov, A. Zhukov, M. Kulagina, 2020, Laser Physics Letters.

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

N. Ledentsov, Y. Shernyakov, A. Zhukov, 2018, Optics express.

Virtual cavity in distributed Bragg reflectors.

A E Zhukov, Y. Shernyakov, A. Zhukov, 2018, Optics express.

Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots

A. Kovsh, V. Ustinov, A. Payusov, 2010 .

Reducing thermal resistance of high-power semiconductor diode lasers with coupled waveguides

G. O. Kornyshov, Y. Shernyakov, M. Kulagina, 2023, Optics & Laser Technology.

Temperature characteristics of tilted wave lasers

N. Ledentsov, Y. Shernyakov, A. Zhukov, 2016 .

Room temperature yellow InGaAlP quantum dot laser

N. Ledentsov, A. Zhukov, V. Shchukin, 2019, Solid-State Electronics.

Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2016, SPIE LASE.

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Nikolai N. Ledentsov, Mikhail V. Maximov, Axel Hoffmann, 2014, Photonics West - Optoelectronic Materials and Devices.

Refractive index of laser active region based on InAs/InGaAs quantum dots

Alexey E. Zhukov, Mikhail V. Maximov, F. I. Zubov, 2013 .

High-power 0.98 µm range diode lasers based on InGaAs/GaAs quantum well-dot active region

G. O. Kornyshov, Y. Shernyakov, A. Zhukov, 2019, Journal of Physics: Conference Series.