H. Sakaki

T. Someya, H. Sakaki, M. Kuwata-Gonokami, 1998, Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236).

Light-Emitting Diodes Using Semiconducting Oligothiophenes

H. Sakaki, H. Noge, S. Hotta, 1993 .

Stark effects and electro-optical properties of strongly stacked dots

H. Sakaki, A. Vasanelli, G. Bastard, 2001 .

Incorporation of silicon during MBE growth of GaAs on (111)A substrates

H. Sakaki, Y. Kadoya, B. Joyce, 1993 .

Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells

M. Yoshita, H. Sakaki, M. Baba, 1998 .

Schottky-Barrier Properties of Nearly-Ideal (n ≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces

H. Ohno, H. Sakaki, Y. Sekiguchi, 1981 .

Energy relaxation of two‐dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions

H. Sakaki, K. Hirakawa, 1986 .

Optical properties of near surface-InAs quantum dots and their formation processes

H. Sakaki, I. Kamiya, I. Tanaka, 1998 .

"Semiconductor nanostructure devices: recent advances and their potentials for transducers applications"

H. Sakaki, 2005 .

Two-dimensional electronic structure in InAs-GaSb superlattices☆☆☆

L. Esaki, H. Sakaki, G. Sai-Halasz, 1978 .

Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE

H. Sakaki, Y. Kadoya, H. Kano, 1991 .

Diffusion process of excitons in the wetting layer and their trapping by quantum dots in sparsely spaced InAs quantum dot systems

H. Sakaki, M. Ohmori, Pavel Vitushinskiy, 2011 .

Formation of Ultra-low Density (≤104 cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method

H. Sakaki, T. Kawazu, M. Ohmori, 2008 .

Superlattice optical-cavity multiple-quantum-well (SOC-MQW) lasers grown by molecular-beam epitaxy

H. Sakaki, Y. Sekiguchi, J. Yoshino, 1984 .

Resonant Raman scattering in GaAs-AlGaAs and GaAs-AlAs multi-quantum well structures and its dependence on electric field

H. Sakaki, T. Furuta, J. Yoshino, 1986 .

Light emission from zero‐dimensional excitons—Photoluminescence from quantum wells in strong magnetic fields

H. Sakaki, Y. Arakawa, H. Okamoto, 1985 .

Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

T. Someya, H. Sakaki, H. Akiyama, 1993 .

Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra

H. Sakaki, Chao Jiang, 2005 .

Observation of a short optical pulse (< 1.3 ps) from a gain-switched quantum well laser

H. Sakaki, Masaaki Tanaka, T. Sogawa, 1988 .

Self-Assembled Growth of GaSb Type II Quantum Ring Structures

H. Sakaki, T. Kawazu, Chao Jiang, 2004 .

Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy

H. Sakaki, H. Noge, Y. Kadoya, 1998 .

Electron beam‐enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer

H. Sakaki, H. Noge, Y. Kadoya, 1993 .

Structure of pentacene/tetracene superlattices deposited on glass substrate

H. Sakaki, H. Noge, T. Inoshita, 1993 .

Landau levels in a novel two-dimensional electron system interacting with charged quantum dots

H. Sakaki, T. Kawazu, K. Torii, 2006 .

Analysis of inelastic scattering processes of electrons by localized electrons in quantum dots

H. Sakaki, T. Kawazu, Takuya Kawazu, 2004 .

Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

H. Sakaki, Y. Arakawa, K. Hirakawa, 2007 .

Polaron effects in quantum dots

H. Sakaki, G. Bastard, T. Inoshita, 2002 .

Quantitative analysis of light emission from SiGe quantum wells

H. Sakaki, H. Akiyama, Y. Shiraki, 1995 .

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

H. Sakaki, I. Kamiya, K. Uno, 2010 .

Formation of multi-atomic steps and novel n-AlGaAs/GaAs heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons

H. Sakaki, Yusui Nakamura, S. Koshiba, 1997 .

Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Laser

H. Sakaki, H. Noge, Y. Kadoya, 1994 .

Novel magneto-resistance oscillations in laterally modulated two-dimensional electrons with 20 nm periodicity formed on vicinal GaAs (1 1 1)B substrates

H. Sakaki, T. Inoshita, Yusui Nakamura, 1998 .

Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures

H. Sakaki, J. Wakabayashi, S. Kawaji, 1986 .

Activation energies of the 13and23 fractional quantum Hall effect

H. Sakaki, J. Wakabayashi, S. Kawaji, 1986 .

Temperature Dependence of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures

H. Sakaki, J. Wakabayashi, S. Kawaji, 1985 .

Shape analysis of wave functions in T-shaped quantum wires by means of magneto-photoluminescence spectroscopy

T. Someya, H. Sakaki, H. Akiyama, 1998 .

Microphotoluminescence characterization of cleaved edge overgrowth T-shaped InxGa1−xAs quantum wires

T. Someya, M. Yoshita, H. Sakaki, 1998 .

Spectroscopy of one-dimensional excitons in gaas quantum wires

T. Someya, H. Sakaki, H. Akiyama, 1997 .

Photoluminescence from point contact structure — Direct observation of electron flow

T. Noda, H. Sakaki, Y. Arakawa, 1996 .

Effects of the gate bias on the activation energies of the fractional quantum hall effect

H. Sakaki, J. Wakabayashi, K. Hirakawa, 1988 .

Second Activation Energy in the Fractional Quantum Hall Effect

H. Sakaki, J. Wakabayashi, K. Hirakawa, 1987 .

Enhanced second-order optical nonlinearity using inter- and intra-band transitions in low-dimensional semiconductors

H. Sakaki, A. Shimizu, M. Kuwata-Gonokami, 1992 .

Spontaneous spin polarization in quantum wires

H. Sakaki, Gerhard Fasol, 1994 .

Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions

H. Sakaki, M. Lachab, 2008 .

Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode

H. Sakaki, I. Kamiya, K. Uno, 2005 .

Fano profile in intersubband transitions in InAs quantum dots

H. Sakaki, K. Hirakawa, P. Lelong, 2000 .

Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force microscopy with conductive tip

H. Sakaki, I. Kamiya, I. Tanaka, 1999 .

Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime

H. Sakaki, G. Yusa, 1998 .

Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots

H. Sakaki, Qinsheng Zhu, Chao Jiang, 2011 .

g-factor of two-dimensional electrons in selectively doped n-AlGaAs/GaAs heterojunctions with embedded InGaAs quantum dots

H. Sakaki, T. Kawazu, 2007 .

Growth of GaSb quantum dots on GaAs (311)A

H. Sakaki, Takeshi Noda, T. Mano, 2013 .

GaAs/n-AIGaAs field-effect transistor with embedded InAs quantum traps and its programmable threshol

H. Sakaki, G. Yusa, 1996 .

Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical properties

H. Sakaki, T. Kawazu, M. Ohmori, 2005 .

Resonant tunneling of electrons through single self‐assembled InAs quantum dot at room temperature studied with conductive AFM tip

H. Sakaki, I. Kamiya, K. Uno, 2008 .

MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (1 1 1)B GaAs surface

H. Sakaki, Y. Akiyama, 2007 .

Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs

H. Sakaki, Y. Akiyama, 2006 .

Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure

H. Sakaki, I. Kamiya, Ken'ichiro Tanaka, 2002 .

Surface potential measurement of self-assembled InAs dots by scanning Maxwell stress microscopy

H. Sakaki, I. Kamiya, I. Tanaka, 2000 .

Formation of 10 nm-Scale Edge Quantum Wire Structures and Their Excitonic and Electronic Properties

T. Someya, H. Sakaki, H. Akiyama, 1997 .

Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration

H. Sakaki, H. Akiyama, Y. Ohno, 1998 .

Two-dimensional quantum-mechanical confinement of electrons in DH lasers by strong magnetic fields

H. Sakaki, Y. Arakawa, M. Nishioka, 1983 .

Localization of Quantum Well Excitons by Lateral Disorder. A Numerical Study

H. Sakaki, G. Döhler, C. Metzner, 1997 .

Quantum microstructure devices

H. Sakaki, 1994 .

Nanostructures and Quantum Effects

H. Sakaki, H. Noge, 1994 .

Single electron transport and current quantization in a novel quantum dot structure

Junichi Motohisa, Hiroyuki Sakaki, Leo P. Kouwenhoven, 1994 .

Angular Dependent Magnetoresistance Oscillationin GaAs/Al x Ga 1- x As Superlattice

H. Sakaki, Y. Iye, T. Ikoma, 1991 .

Observation of Ferromagnetic Material and High-Temperature Superconductor with a Variable-Temperature Scanning Hall Probe Microscope

H. Sakaki, N. Kanda, H. Koinuma, 1998 .

Development of a scanning Hall probe microscope for simultaneous magnetic and topographic imaging

T. Noda, H. Sakaki, K. Kitazawa, 1999 .

Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy

H. Sakaki, 2003 .

Scanning Probe Microscopy in Nanoscience and Nanotechnology 3

B. Bhushan, H. Sakaki, P. Avouris, 2013 .

Shubnikov—de Haas Oscillations in a Semiconductor Superlattice

L. Esaki, L. Esaki, H. Sakaki, 1977 .

Molecular Beam Epitaxy

H. Sakaki, 1987 .

Recombination lifetime of carriers in GaAs‐GaAlAs quantum wells near room temperature

Takeshi Kamiya, Yasuhiko Arakawa, Hiroyuki Sakaki, 1985 .

Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy: Misorientation effects

H. Sakaki, Masaaki Tanaka, 1988 .

Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy

H. Sakaki, D. Vvedensky, H. Noge, 1995 .

Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

Masahiro Tsuchiya, Kazumi Wada, Hidefumi Akiyama, 1994 .

Quantitative Study of Exciton-Exciton Interaction in a GaAs Microcavity

T. Someya, H. Sakaki, T. Aoki, 2000 .

A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)

H. Sakaki, Kaoru Inoue, 1984 .

Analyses of localized confinement potential in semiconductor strained wires and dots buried in lattice‐mismatched materials

K. Nishi, H. Sakaki, J. Ahopelto, 1994 .

Controlling anisotropy of GaSb(As)/GaAs quantum dots by self-assembled molecular beam epitaxy

H. Sakaki, Chao Jiang, 2006 .

Prediction of Spin-Polarization Effects in Quantum Wire Transport

H. Sakaki, Gerhard Fasol, 1994 .

Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots

H. Sakaki, T. Kawazu, Chao Jiang, 2007 .

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs

H. Sakaki, Takeshi Noda, T. Mano, 2011 .

Effects of Interface Grading on Electronic States and Optical Transitions in GaSb Type-II Quantum Dots in GaAs

H. Sakaki, T. Kawazu, 2010 .

Fractional Quantum Hall Effect at ν=1⁄7

H. Sakaki, J. Wakabayashi, K. Hirakawa, 1988 .

RESONANT TERAHERTZ OPTICAL SIDEBAND GENERATION FROM CONFINED MAGNETOEXCITONS

Junichiro Kono, Takeshi Noda, Hiroyuki Sakaki, 1997 .

Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted In0.1Ga0.9As/GaAsIn0.1Ga0.9As/GaAs channel with corrugated interfaces

H. Sakaki, Y. Arakawa, T. Kawazu, 2006 .

Formation of planar superlattice states in new grid‐inserted quantum well structures

H. Sakaki, Masaaki Tanaka, 1989 .

MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells

H. Sakaki, Masaaki Tanaka, 1988 .

10 nm-scale edge- and step-quantum wires and related structures: Progress in their design, epitaxial synthesis and physics

T. Someya, H. Sakaki, H. Akiyama, 1999 .

Electron transport via resonantly coupled energy levels in triple barrier structure investigated by magnetotunneling spectroscopy

H. Sakaki, H. Kurata, 1994 .

Determination of interface-state density and mobility ratio in silicon surface inversion layers

H. Sakaki, T. Sugano, K. Hoh, 1970 .

Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states

Takeshi Noda, Yusui Nakamura, Hiroyuki Sakaki, 1997 .

Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

H. Sakaki, T. Kawazu, Takuya Kawazu, 2005 .

Inelastic scattering processes in GaAs/n-AlGaAs selectively doped heterojunctions with InGaAs quantum dots

H. Sakaki, Takeshi Noda, T. Kawazu, 2004 .

Interface roughness scattering and electron mobility in quantum wires

H. Sakaki, J. Motohisa, 1992 .

Electronic structure of the ridge quantum wire based on an analytic confinement model

H. Sakaki, T. Inoshita, 1996 .

Gigantic negative transconductance and mobility modulation in a double‐quantum‐well structure via gate‐controlled resonant coupling

H. Sakaki, Y. Ohno, M. Tsuchiya, 1993 .

Multi-phonon relaxation of electrons in a semiconductor quantum dot

H. Sakaki, T. Inoshita, 1994 .

Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs–AlxGa1-xAs Heterojunction Interface

H. Ohno, H. Sakaki, G. Kido, 1982 .

Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction structures

H. Sakaki, Kaoru Inoue, J. Yoshino, 1985 .

New functional field-effect transistor based on wavefunction modulation in delta -doped double quantum wells

H. Sakaki, Y. Ohno, M. Tsuchiya, 1993 .

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

Hiroyuki Sakaki, H. Sakaki, G. Yusa, 1997 .

One-dimensional Properties Of Excitons Confined In T-shaped Quantum Wires

H. Sakaki, T. Someya, H. Akiyama, 1997, Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics.

Optical absorption and carrier‐induced bleaching effect in quantum wire and quantum box structures

Hiroyuki Sakaki, Hisao Yoshimura, H. Sakaki, 1990 .

One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

H. Sakaki, Masaaki Tanaka, J. Yoshino, 1985 .

Saturation of Intersubband Absorption by Real‐Space Transfer in Modulation Doped Single GaAs–AlAs Quantum Well

H. Sakaki, Takeshi Noda, S. Tsujino, 1997 .

Terahertz dynamics in confined magnetoexcitons

S. J. Allen, T. Noda, H. Sakaki, 1998 .

Enhancement of the Coulomb correlations in type-II quantum dots

H. Sakaki, G. Bastard, Y. Arakawa, 2000 .

Fabrication of Atomically Controlled Nanostructures and Their Device Application

H. Sakaki, 1999 .

Spatially resolved photoluminescence study on T-shaped quantum wires fabricated by cleaved edge overgrowth method

T. Someya, H. Sakaki, H. Akiyama, 1996 .

Polarons and energy relaxation in quantum dots

H. Sakaki, G. Bastard, Y. Guldner, 2002 .

Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations

H. Sakaki, Takeshi Noda, H. Nakajima, 2000 .

Growth of GaSb and AlSb quantum dots on high-index GaAs substrates

T. Noda, H. Sakaki, T. Mano, 2014 .

Diffusion of two-dimensional excitons in pseudo-random potentials embedded in quantum well structures

H. Sakaki, H. Akiyama, T. Matsusue, 1993 .

Oscillatory magnetoresistance of GaAs/GaAlAs quantum well structures under parallel magnetic fields

H. Sakaki, J. Yoshino, T. Hotta, 1984 .

Reduced phonon scattering in an asymmetric triple barrier resonant-tunneling diode at high magnetic fields

H. Sakaki, N. Miura, T. Takamasu, 2006 .

Observation of optical-phonon-scattering inhibited region in longitudinal magnetoresistance in superlattices

H. Sakaki, T. Takamasu, N. Miura, 1992 .

Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructures

H. Sakaki, S. Svensson, K. Hirakawa, 1984 .

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

H. Sakaki, Qinsheng Zhu, Chao Jiang, 2010 .

Tangential magnetoresistance of two‐dimensional electron gas at a selectively doped n‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

H. Ohno, H. Sakaki, 1982 .

Summary Abstract: High mobility effect of electrons in ultrafine semiconductor wire structures

H. Sakaki, 1981 .

Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

H. Sakaki, Masaaki Tanaka, 1987 .

Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices

H. Sakaki, 1986 .

RESONANT GENERATION OF TERAHERTZ OPTICAL SIDEBANDS FROM CONFINED MAGNETOEXCITONS

S. J. Allen, T. Noda, H. Sakaki, 1998 .

Terahertz Linear and Nonlinear Dynamics in Confined Magnetoexcitons

S. J. Allen, T. Noda, H. Sakaki, 1997 .

Interface roughness and confined LO phonons in quantum wells

H. Sakaki, Masaaki Tanaka, Y. Horikoshi, 1989 .

Gate-controlled modulation of electronic states and conductance in coupled quantum wells having an in-plane periodic potential

H. Sakaki, Y. Ohno, 1996 .

Non-uniform resonant coupling effect on 2D electron transport in δ-doped double quantum well structures

H. Sakaki, Y. Ohno, T. Matsusue, 1994 .

Electronic Transition and Scattering Processes in Quantum Structures and Their Control for Advanced Devices

H. Sakaki, Y. Ohno, T. Inoshita, 1994 .

Control of Electron Scattering and Quantum Transition via Wave-Function Engineering in Nanostructures

H. Sakaki, 1994 .

MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity

H. Sakaki, Kaoru Inoue, J. Yoshino, 1984 .

Velocity-Modulation Transistor (VMT) –A New Field-Effect Transistor Concept

Hiroyuki Sakaki, H. Sakaki, 1982 .

In1−xGaxAs‐GaSb1−yAsy heterojunctions by molecular beam epitaxy

Leo Esaki, L. Esaki, H. Sakaki, 1977 .

Hot-electron transport in selectively doped n-type AlGaAs/GaAs heterojunctions

H. Sakaki, K. Hirakawa, 1988 .

Inelastic Scattering and Spin-Orbit Scattering in 2D Systems Of GaAs/AlGaAs Heterostructures

H. Sakaki, J. Wakabayashi, S. Kawaji, 1985 .

Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and their Potentials for Infrared Photodetector

T. Noda, H. Sakaki, J. Motohisa, 1992 .

Atomic structure of monolayer AlAs islands on GaAs and its anisotropy revealed by mobility study in island-inserted quantum wells

H. Sakaki, Takeshi Noda, J. Motohisa, 1992 .

In situ optical characterization of GaAs and InP surfaces during chloride atomic layer epitaxy

K. Nishi, H. Sakaki, A. Usui, 1993 .

In situ optical characterization of GaAs surfaces under alternating supply of GaCl and AsH3

K. Nishi, H. Sakaki, A. Usui, 1992 .

Effect of imperfect potential on the electron mobility in in-plane superlattice structures

H. Sakaki, J. Motohisa, 1993 .

Anisotropic transport and nonparabolic miniband in a novel in-plane superlattice consisting of a grid-inserted selectively doped heterojunction

H. Sakaki, Masaaki Tanaka, J. Motohisa, 1989 .

2D-nucleation on (1 1 1)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication

H. Sakaki, S. Naritsuka, T. Nishinaga, 2000 .

(1 1 1)B growth elimination in GaAs MBE of (0 0 1)-(1 1 1)B mesa structure by suppressing 2D-nucleation

T. Noda, H. Sakaki, S. Naritsuka, 2000 .

Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication

T. Noda, H. Sakaki, T. Nishinaga, 2000 .

Surface diffusion processes of Ga and Al in MBE - formation of 10-nm scale GaAs ridge structures -

T. Noda, H. Sakaki, Yusui Nakamura, 1999 .

Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)‐(111)B facet structures

T. Noda, H. Sakaki, M. Tsuchiya, 1994 .

MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations

T. Someya, H. Sakaki, H. Akiyama, 1994 .

Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast

H. Sakaki, T. Furuta, M. Onoe, 1984 .

Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers

H. Sakaki, M. Tsuchiya, J. Yoshino, 1985 .

Lattice Imaging Analysis of GaAs/AlAs Superlattice Interface by [100] Illumination

H. Sakaki, Y. Ishida, H. Ichinose, 1987 .

Control of Electron Population by Intersubband Optical Excitation in a novel Asymmetric Double Quantum Well Structure

H. Sakaki, H. Akiyama, Y. Kadoya, 1994 .

Subband structures and wave functions of electrons in quantum wires and in‐plane superlattices consisting of grid‐inserted quantum‐well structures

H. Sakaki, J. Schulman, H. Sugawara, 1991 .

Electron mobility and roughness scattering in Potential Inserted Quantum Wells (PI-QWs)

H. Sakaki, Takeshi Noda, Masaaki Tanaka, 1989 .

Field‐dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction systems

H. Sakaki, Kaoru Inoue, J. Yoshino, 1985 .

Polarization anisotropies in quantum wells

H. Sakaki, G. Bauer, 1992 .

Molecular beam epitaxial growth of AlGaAs∕InGaAs∕GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties

H. Sakaki, T. Noda, T. Kawazu, 2005 .

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

Pierre Petroff, Naser Qureshi, Hiroyuki Sakaki, 1999 .

InAs quantum dot field effect transistors

H. Sakaki, G. Yusa, 1999 .

Electron-phonon interaction and the so-called phonon bottleneck effect in semiconductor quantum dots

Hiroyuki Sakaki, H. Sakaki, T. Inoshita, 1996 .

Start of 2D nucleation by accumulation of Ga adatoms on GaAs (1 1 1)B facet

H. Sakaki, S. Naritsuka, T. Nishinaga, 2002 .

Negative vertical photovoltaic response of two-dimensional electrons in the quantum Hall regime

T. Noda, H. Sakaki, T. Inoshita, 1998 .

Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas

H. Sakaki, M. Tsuchiya, H. Noge, 1994 .

Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)B facet structures for edge quantum wires

H. Sakaki, M. Tsuchiya, Yusui Nakamura, 1991 .

Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

H. Sakaki, H. Noge, Y. Nakamura, 1996 .

Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor

H. Sakaki, H. Noge, Yusui Nakamura, 1994 .

Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

H. Sakaki, H. Noge, J. Motohisa, 1994 .

Quasi‐one‐dimensional electron gas and its magnetic depopulation in a quantum wire prepared by overgrowth on a cleaved edge of AlGaAs/GaAs multiple quantum wells

Hiroyuki Sakaki, H. Sakaki, J. Motohisa, 1993 .

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

H. Sakaki, Y. Nakamura, I. Tanaka, 1998 .

Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

H. Sakaki, H. Noge, Yusui Nakamura, 1997 .

Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates

H. Sakaki, H. Noge, Y. Kadoya, 1995 .

MBE Growth of Quantum-Wire Structures on Top of Sharp Riges Using a Mesa-Patterned Substrate

H. Sakaki, H. Akiyama, H. Noge, 1994 .

Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

H. Sakaki, H. Noge, Y. Kadoya, 1993 .

Molecular‐beam‐epitaxial growth of n‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

H. Sakaki, H. Noge, Y. Kadoya, 1992 .

Electron concentration and mobility in selectively doped edge quantum wires

H. Sakaki, T. Inoshita, A. Shimizu, 1992 .

Quantum wires, quantum boxes and related structures : physics, device potentials and structural requirements

H. Sakaki, 1992 .

High-sensitivity modulation-doped quantum dot infrared photodetectors

Hiroyuki Sakaki, H. Sakaki, K. Hirakawa, 2002 .

Photoluminescence study of lateral confinement energy in T-shaped In x Ga 1 − x As quantum wires

T. Someya, M. Yoshita, H. Sakaki, 1998 .

Microscopy of electronic states contributing to lasing in ridge quantum-wire laser structure

M. Yoshita, H. Sakaki, M. Baba, 1999 .

Picosecond pulse generation (<1.8 ps) in a quantum well laser by a gain switching method

Hiroyuki Sakaki, Y. Arakawa, H. Sakaki, 1987 .

Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs–AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption

H. Sakaki, Masaaki Tanaka, J. Yoshino, 1986 .

Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement

H. Sakaki, Takeshi Noda, Masaaki Tanaka, 1990 .

Atomic-scale characterization and control of semiconductor interfaces grown by molecular beam epitaxy: interface roughness and optical and electronic properties

H. Sakaki, Takeshi Noda, Masaaki Tanaka, 1992 .

High‐resolution electron microscopy of growth interruption effect on AlAs/GaAs interfacial structure during molecular beam epitaxy

H. Sakaki, Masaaki Tanaka, N. Ikarashi, 1992 .

Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures

T. Noda, H. Sakaki, Y. Kadoya, 1993 .

High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection

H. Sakaki, T. Baba, J. Motohisa, 1990 .

High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection

H. Sakaki, T. Baba, Masaaki Tanaka, 1993 .

Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode

H. Sakaki, M. Tsuchiya, J. Yoshino, 1985 .

Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement

H. Sakaki, Takeshi Noda, Masaaki Tanaka, 1991 .

Control of size and density of self-assembled InAs dots on (0 0 1)GaAs and the dot size dependent capping process

Hiroyuki Sakaki, I. Kamiya, Ichiro Tanaka, 1999 .

Possible applications of surface-corrugated quantum thin films to negative-resistance devices☆

H. Sakaki, K. Wagatsuma, S. Saito, 1976 .

Time‐resolved D‐band luminescence in strain‐relieved SiGe/Si

H. Sakaki, H. Akiyama, S. Fukatsu, 1996 .

Molecular beam epitaxial growth of high electron mobility {InAs}/{AlGaAsSb} deep quantum well structures

H. Sakaki, N. Kuze, I. Shibasaki, 1997 .

Observation of Dynamical Franz-Keldysh Effect

Hidefumi Akiyama, Junichiro Kono, Takeshi Noda, 1997 .

Density and size control of self-assembled InAs quantum dots: preparation of very low-density dots by post-annealing

Hiroyuki Sakaki, I. Kamiya, Ichiro Tanaka, 2002 .

Recent progress in quantum structure materials, physics and devices

H. Sakaki, 1996 .

Roles of Quantum Nanostructures in Advanced Electronics

H. Sakaki, 2002 .

Electroluminescence from thin film of a semiconducting oligothiophene deposited in ultrahigh vacuum

H. Sakaki, H. Noge, S. Hotta, 1994 .

FET characteristics of substituted oligothiophenes with a series of polymerization degrees

H. Sakaki, S. Hotta, H. Akimichi, 1993 .

Thermalization effects of low dimensional excitons in quantum wires and quantum wells

H. Sakaki, H. Akiyama, 1995 .

CARRIER INDUCED EFFECTS OF QUANTUM WELL STRUCTURE AND ITS APPLICATION TO OPTICAL MODULATORS AND OPTICAL SWITCHES

H. Sakaki, H. Yoshimura, 1989 .

Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al x Ga 1-x As Heterojunction Interfaces

H. Sakaki, S. Kawaji, J. Yoshino, 1984 .

Control of Electronic States in Epitaxially Synthesized Quantum Dot and Wire Structures and Their Potentials as New Electronics and Photonics Materials

H. Sakaki, 1999 .

Large conductance anisotropy in a novel two‐dimensional electron system grown on vicinal (111)B GaAs with multiatomic steps

H. Sakaki, Yusui Nakamura, S. Koshiba, 1996 .

Ion‐beam‐induced‐current (IBIC) monitoring of uniform and selective ion‐etching processes in layered structures

H. Sakaki, K. Yokoyama, Y. Sekiguchi, 1981 .

Interface roughness in AlAs/GaAs quantum wells characterized by the mobility of two-dimensional electrons

H. Sakaki, Takeshi Noda, K. Hirakawa, 1988 .

A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)

H. Ohno, H. Sakaki, T. Hotta, 1982 .

InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties

H. Sakaki, S. Nagao, H. Amanai, 2001 .

Anisotropic mobilities of low-dimensional electrons at stepped n-AlGaAs/GaAs interfaces with 15 nm periodicity on vicinal (111)B substrates

T. Noda, H. Sakaki, J. Motohisa, 2000 .

Self‐consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double‐heterojunction systems under electric fields

H. Sakaki, Kaoru Inoue, T. Hotta, 1985 .

Suppression of lateral diffusion of excitons in GaAs quantum wells under perpendicular magnetic fields

H. Sakaki, H. Akiyama, T. Matsusue, 1995 .

Phototransistors Using Point Contact Structures

T. Noda, H. Sakaki, Y. Arakawa, 1996 .

CONTROL OF ELECTRON POPULATION BY INTERSUBBAND OPTICAL EXCITATION IN POTENTIAL-INSERTED DOUBLE QUANTUM WELL STRUCTURES

H. Sakaki, H. Akiyama, Y. Kadoya, 1994 .

Tightly confined one‐dimensional states in T‐shaped GaAs edge quantum wires with AlAs barriers

T. Someya, H. Sakaki, H. Akiyama, 1995 .

Tunneling spectroscopic study of InAs-covered GaAs under laser irradiation

M. Yoshita, H. Sakaki, I. Kamiya, 1998 .

Transient negative photoconductance in a charge transfer double quantum well under optical intersubband excitation

H. Sakaki, S. Tsujino, M. Rüfenacht, 1998 .

Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well

H. Sakaki, M. Rüfenacht, 1997 .

Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure

H. Sakaki, Y. Ohno, S. Tsujino, 1997 .

Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy

H. Sakaki, Masaaki Tanaka, 1988 .

Minigap plasmons in a two-dimensional electron gas subjected to a one-dimensional periodic potential

H. Sakaki, M. Kushwaha, 2004 .

Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

H. Sakaki, T. Kawazu, 2010 .

Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell

H. Sakaki, T. Noda, K. Sakoda, 2013 .

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications

H. Sakaki, T. Noda, L. M. Otto, 2014 .

Self-assembled growth of GaSb type-II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs

H. Sakaki, T. Kawazu, Y. Akiyama, 2011 .

Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy

H. Sakaki, Takeshi Noda, T. Mano, 2010 .

Photo-induced current in n-AlGaAs/GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar

T. Noda, H. Sakaki, T. Mano, 2013 .

Temperature Dependence of Magnetocapacitance in n-AlGaAs/GaAs Selectively Doped Heterojunction with InGaAs Quantum Dots

H. Sakaki, T. Kawazu, 2010 .

Electron scatterings in selectively doped n-AlGaAs∕GaAs heterojunctions with high density self-assembled InAlAs antidots

H. Sakaki, T. Kawazu, 2008 .

Magnetocapacitance Measurement of Selectively Doped n-AlGaAs/GaAs Heterojunction with InGaAs Quantum Dots

H. Sakaki, T. Kawazu, 2008 .

Scattering of two-dimensional electrons by self-assembled InAlAs anti-dots in novel n-AlGaAs/GaAs heterojunctions

H. Sakaki, T. Kawazu, 2007 .

Transformation of GaAs (001)–(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

T. Noda, H. Sakaki, H. Akiyama, 2001 .

Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing

H. Sakaki, T. Furuta, Masaaki Tanaka, 1986 .

Spontaneous spin polarization of ballistic electrons in single‐mode quantum wires due to spin splitting

H. Sakaki, Gerhard Fasol, 1993, cond-mat/9304021.

InGaAs triangular barrier photodiodes for high-responsivity detection of near-infrared light

H. Sakaki, N. Iwata, Takeshi Noda, 2016 .

Splitting of Photoluminescence Spectra and Negative Differential Resistance Caused by the Electric Field Induced Resonant Coupling of Quantized Levels in GaAs–AlGaAs Multi-Quantum Well Structures

H. Sakaki, T. Furuta, K. Hirakawa, 1986 .

Transport properties of double‐gate SiO2–Si–SiO2 quantum well

H. Sakaki, M. Prunnila, J. Ahopelto, 2005 .

Fabrication of Quantum-Wire Structures by Atomic-Layer Epitaxy and VPE Processes

H. Sakaki, A. Yamaguchi, H. Sunakawa, 1994 .

Electron-phonon interaction in GaAs/AlxGa1−xAs/GaAs single-barrier heterojunction diodes

H. Sakaki, K. Hirakawa, T. Ikoma, 1990 .

Observation of photon-assisted tunneling through a quantum dot.

P. McEuen, H. Sakaki, Kouwenhoven, 1994, Physical review letters.

Electron scattering in GaAs/n‐AlGaAs selectively doped heterojunctions with charged and neutral InGaAs quantum dots

H. Sakaki, Takeshi Noda, T. Kawazu, 2003 .

Scattering of 2D Electrons by Self‐Organized Anti‐Dots in n‐AlGaAs/GaAs Heterojunction Channels

T. Noda, H. Sakaki, G. Yusa, 2001 .

Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states induced by Ga-FIB implantation

H. Sakaki, H. Kim, 2000 .