C. Pickering

发表

Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures

C. Pickering, 1998 .

The effect of pressure on impact ionisation and the Gunn effect in InAs

C. Pickering, A. Adams, G. Pitt, 1975 .

In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs

C. Pickering, T. Martin, J. Birbeck, 2001 .

Modeling Roughness of Rock Discontinuity Surfaces

C. Pickering, 2015 .

Uniaxial stress investigations of the three-level conduction band structure of GaAs

C. Pickering, A. Adams, 1977 .

In Situ Laser Light Scattering II . Relationship to Silicon Surface Topography

C. Pickering, D. Robbins, J. Glasper, 1989 .

Determination of properties of thin thermal SiO2 on silicon by spectroscopic ellipsometry

C. Pickering, A. Hodge, V. Nayar, 1991 .

Spectroscopic Ellipsometry as a Non-Destructive Technique for Characterization of Atomic-Scale Interfaces

C. Pickering, J. Stehle, J. Piel, 1989 .

Optical properties of porous silicon films

C. Pickering, D. Robbins, R. Greef, 1985 .

Dielectric functions and critical points of strained InxGa1−xAs on GaAs

C. Pickering, M. Emeny, R. Carline, 1992 .

In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures

C. Pickering, D. Robbins, W. Y. Leong, 1993 .

SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry

C. Pickering, J. Stehle, P. Evrard, 1992 .

Metal organic vapour phase epitaxy of indium phosphide

S. J. Bass, C. Pickering, M. Young, 1983 .

Non-destructive characterisation of n-type InP epitaxial layers by infrared reflectivity measurements

C. Pickering, 1983 .

Free-carrier absorption in p-type Pb0.79Sn0.21Te

C. Pickering, 1977 .

In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBE

N. G. Chew, C. Pickering, D. Robbins, 1987 .

Infrared reflectivity studies of gax in1-x asy p1-y quaternary compounds

C. Pickering, 1981 .

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

C. Pickering, D. Robbins, A. Pidduck, 1992 .

ELLIPSOMETRY AND LIGHT SCATTERING CHARACTERIZATION OF SEMICONDUCTOR SURFACES

C. Pickering, 1995 .

Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry

C. Pickering, A. J. Pidduck, C. Pickering, 2002 .

Characterization of oxide layers on GaAs substrates

Dan A. Allwood, C. Pickering, Brian K. Tanner, 2000 .

Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers

C. Pickering, D. Robbins, S. Barnett, 1993 .

Dielectric function spectra of strained and relaxed Si1−xGex alloys (x=0–0.25)

C. Pickering, R. Carline, 1994 .

Spectroscopic ellipsometry of Si1−xGex epilayers of arbitrary composition 0≤x≤0.255

C. Pickering, D. Robbins, W. Y. Leong, 1994 .

Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)

C. Pickering, J. Glasper, J. Piel, 2002 .

Real‐time monitoring of Si1–xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

C. Pickering, D. Robbins, D. Hope, 1995 .

Studies of the Ga1-xI^As1-ySby quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy

C. Pickering, 1986 .

The effect of pressure on the high electric field instabilities in n-type GaAs

C. Pickering, A. Adams, M. Vyas, 1975 .

Surface topography changes during the growth of GaAs by molecular beam epitaxy

G. W. Smith, C. Pickering, J. Glasper, 1991 .

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si 1−x Ge x Heterostructures and Multiuantum Wells

C. Pickering, D. Robbins, W. Y. Leong, 1993 .

Optical characterisation of acceptors in doped and undoped VPE InP

P. J. Dean, C. Pickering, P. Tapster, 1983 .

In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si

I. M. Young, C. Pickering, D. Robbins, 1987 .

Real Time Observation of Periodic Step Arrays During Silicon Vapour Phase Homoepitaxy

I. M. Young, C. Pickering, D. Robbins, 1987 .

Correlation of in situ ellipsometric and light scattering data of silicon-based materials with post-deposition diagnostics

C. Pickering, 1991 .

Control of Hole Concentration in Liquid-Phase Epitaxial Layers of PbTe by As Doping

C. Pickering, M. Astles, M. Young, 1979 .

Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature

C. Pickering, M. Young, W. Harding, 1977 .

A study of base contact formation in epitaxial Si/Si 0.88 Ge 0.12 HBT structures

C. Pickering, D. Robbins, F. Cristiano, 1996 .

Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures

C. Pickering, L. Canham, D. Brumhead, 1993 .

Ellipsometry of rough silicon surfaces: comment on the 'roughness of heteroepitaxial silicon-on-sapphire'

C. Pickering, A. Hodge, R. Greef, 1989 .

Modeling Roughness of Rock Discontinuity Surfaces: A Signal Analysis Approach

A. Aydin, C. Pickering, 2016, Rock Mechanics and Rock Engineering.

Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon

C. Pickering, D. Robbins, R. Greef, 1984 .

An apparatus for high uniaxial stress electrical investigations of semiconductors

Alfred R. Adams, C. Pickering, C. Pickering, 1980 .

Infrared reflectivity measurements on bulk and epitaxial GaSb. (Carrier concentration and mobility measurements)

C. Pickering, 1980 .

Optical characterization techniques for process monitoring

C. Pickering, C. Pickering, Andrews Road, 2001 .

Real‐time spectroscopic ellipsometry monitoring of Si1−xGex/Si epitaxial growth

C. Pickering, D. Robbins, D. Hope, 1995 .

Photoreflectance spectroscopy of pseudomorphic Si1−XGex (100) structures (x<0·26)

C. Pickering, D. Hall, T. Hosea, 1995 .

Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

C. Pickering, D. Robbins, S. Barnett, 1993 .

Photoreflectance of strained Si1-xGex epilayers (0.07≤x≥0.26) and comparison with spectroscopic ellipsometry

C. Pickering, D. Robbins, T. Hosea, 1994 .

Oxidation Induced Changes in the Si Surface Microroughness

C. Pickering, A. Pidduck, V. Nayar, 1991 .

THE MEASUREMENT OF SURFACE BORON ON SILICON WAFERS ANNEALED IN VACUUM AND GAS AMBIENTS

I. M. Young, C. Pickering, D. Robbins, 1989 .

Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces

C. Pickering, Andrews Road, 2001 .

In situ optical monitoring for SiGe epitaxy

C. Pickering, A. Marrs, D. Robbins, 2000 .

Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors

C. Pickering, T. Hosea, P. Thomas, 1998 .