M. Luisier

发表

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

B. Haley, Sunhee Lee, M. Luisier, 2009 .

Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

W. Fichtner, M. Luisier, Gerhard Klimeck, 2006 .

Sub-10 nm carbon nanotube transistor

W. Haensch, M. Luisier, M. Lundstrom, 2011 .

Sub-10 nm carbon nanotube transistor

Mark S. Lundstrom, W. Haensch, M. Luisier, 2011, 2011 International Electron Devices Meeting.

InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?

M. Luisier, A. Schenk, H. Carrillo-Nuñez, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Atomistic modeling of coupled electron-phonon transport in nanowire transistors

M. Luisier, R. Rhyner, 2014 .

Quantum transport in two- and three-dimensional nanoscale transistors : Coupled mode effects in the nonequilibrium Green's function formalism

W. Fichtner, M. Luisier, A. Schenk, 2006 .

Self-heating effects in ultra-scaled Si nanowire transistors

M. Luisier, R. Rhyner, 2013, 2013 IEEE International Electron Devices Meeting.

Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors.

M. Luisier, R. Rhyner, 2016, Nano letters.

Investigation of thermal transport degradation in rough Si nanowires

M. Luisier, 2011 .

Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes

M. Luisier, L. Selmi, D. Esseni, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Performance study of strained III–V materials for ultra-thin body transistor applications

Andreas Schenk, Luca Selmi, Antonio Gnudi, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

M. Luisier, Gerhard Klimeck, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: a first-principles study

M. Luisier, A. Schenk, P. Khomyakov, 2015, 1505.05659.

Countdown Slack: A Run-Time Library to Reduce Energy Footprint in Large-Scale MPI Applications

Luca Benini, Andrea Borghesi, Daniele Cesarini, 2019, IEEE Transactions on Parallel and Distributed Systems.

Atomistic simulation of transport phenomena in nanoelectronic devices.

M. Luisier, 2014, Chemical Society reviews.

Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP, and WS2-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level Comparison

I. Radu, M. Luisier, M. Heyns, 2019, IEEE Transactions on Electron Devices.

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Wolfgang Fichtner, Gerhard Klimeck, Mathieu Luisier, 2011, 2011 International Conference for High Performance Computing, Networking, Storage and Analysis (SC).

Three-Dimensional Full-Band Simulations of Si Nanowire Transistors

W. Fichtner, M. Luisier, A. Schenk, 2006, 2006 International Electron Devices Meeting.

Multiband transmission calculations for nanowires using an optimized renormalization method

T. Boykin, M. Luisier, Gerhard Klimeck, 2008 .

Atomistic Simulation of Nanowire Transistors

M. Luisier, A. Schenk, 2008 .

Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

M. Luisier, Gerhard Klimeck, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

M. Luisier, Gerhard Klimeck, 2009 .

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

M. Luisier, Gerhard Klimeck, 2009 .

Performance analysis of ultra-scaled InAs HEMTs

M. Luisier, Gerhard Klimeck, Daehyun Kim, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor

S. Koester, M. Luisier, P. Solomon, 2011, IEEE Electron Device Letters.

Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models

Mathieu Luisier, Andreas Schenk, Reto Rhyner, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

Gerhard Klimeck, Mathieu Luisier, Timothy B. Boykin, 2010 .

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Gerhard Klimeck, Mathieu Luisier, Samarth Agarwal, 2010, IEEE Electron Device Letters.

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

G. Klimeck, M. Luisier, M. Luisier, 2009, IEEE Electron Device Letters.

Electro-thermal transport in disordered nanostructures: a modeling perspective

M. Luisier, F. Ducry, Jan Aeschlimann, 2020, Nanoscale advances.

Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment

M. Luisier, D. Logoteta, M. Lannoo, 2018, Physical Review B.

Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory

M. Luisier, R. Rhyner, 2017 .

Atomistic Simulation of Nanodevices ( Invited Paper )

M. Luisier, R. Rhyner, Á. Szabó, 2016 .

Atomistic simulation of nanodevices

M. Luisier, R. Rhyner, Á. Szabó, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors

Mathieu Luisier, Hamilton Carrillo-Nunez, Reto Rhyner, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

M. Luisier, N. Sano, A. Ueda, 2015 .

Influence of anharmonic phonon decay on self-heating in Si nanowire transistors

M. Luisier, R. Rhyner, 2014, 2014 International Workshop on Computational Electronics (IWCE).

Influence of anharmonic phonon decay on self-heating in Si nanowire transistors

Mathieu Luisier, Reto Rhyner, M. Luisier, 2014 .

Paving the way for ultimate device scaling through nanoelectronic device simulations

M. Luisier, Á. Szabó, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

V. Balakrishnan, M. Luisier, Gerhard Klimeck, 2011, 1103.5782.

Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Mathieu Luisier, M. Luisier, 2011 .

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

T. Boykin, M. Luisier, Gerhard Klimeck, 2010, IEEE Transactions on Electron Devices.

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

M. Luisier, Gerhard Klimeck, 2010 .

2D simulation of gate currents in MOSFETs: Comparison between S-Device and the quantum mechanical simulator GreenSolver

M. Luisier, A. Schenk, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs

Mark S. Lundstrom, M. Luisier, D. Antoniadis, 2012, IEEE Transactions on Electron Devices.

Temperature Dependence of the Transconductance in Ballistic III–V QWFETs

M. Luisier, M. Lundstrom, Yang Liu, 2011, IEEE Transactions on Electron Devices.

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

M. Luisier, Gerhard Klimeck, J. D. del Alamo, 2010, IEEE Transactions on Electron Devices.

Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $\kappa$ Gate Stacks

M. Luisier, A. Schenk, 2008, IEEE Transactions on Electron Devices.

Hybrid Mode-Space–Real-Space Approximation for First-Principles Quantum Transport Simulation of Inhomogeneous Devices

M. Luisier, F. Ducry, M. H. Bani-Hashemian, 2020 .

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Mathieu Luisier, M. Luisier, Á. Szabó, 2017, 1812.01970.

Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Mathieu Luisier, Andreas Schenk, Hamilton Carrillo-Nunez, 2015 .

Winterface: An Interface from Wannier90 to Quantum Transport

M. Luisier, C. Stieger, 2020, 2007.04268.

Effects of interface roughness scattering on RF performance of nanowire transistors

T. Boykin, M. Luisier, Gerhard Klimeck, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors

T. Boykin, M. Luisier, Gerhard Klimeck, 2011, 1111.3424.

Full-band quantum transport in nanowire transistors

Mathieu Luisier, M. Luisier, 2008 .

Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors

Wolfgang Fichtner, Mathieu Luisier, Andreas Schenk, 2007 .

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

T. Boykin, M. Luisier, Gerhard Klimeck, 2014 .

Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

Jeffrey Bokor, Dimitri A. Antoniadis, Mathieu Luisier, 2011, 2011 International Electron Devices Meeting.

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

M. Luisier, Gerhard Klimeck, 2009, 2009 Device Research Conference.

Complex Band Structure Effects in k $\cdot$ p-Based Quantum Transport Simulations of p-Type Silicon Nanowire Transistors

M. Luisier, A. Ziegler, 2018, IEEE Transactions on Electron Devices.

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

Juerg Leuthold, Yuriy Fedoryshyn, Yannick Salamin, 2019, Communications Physics.

Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells

M. Luisier, D. Logoteta, M. Lannoo, 2018, The Journal of Physical Chemistry C.

Diffusion mechanisms in Li0.5CoO2—A computational study

M. Luisier, A. Pedersen, Teute Bunjaku, 2015, 1511.05029.

Modeling approaches for band-structure calculation in III-V FET quantum wells

A. Gnudi, G. Baccarani, M. Luisier, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

A. Gnudi, G. Baccarani, M. Luisier, 2016 .

Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics

S. Koester, M. Luisier, Á. Szabó, 2015, IEEE Electron Device Letters.

Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?

S. Koester, M. Luisier, Á. Szabó, 2014, 72nd Device Research Conference.

Atomic Scale Plasmonic Switch.

Juerg Leuthold, Christian Haffner, Mathieu Luisier, 2016, Nano letters.

Single Atom Plasmonic Switch

M. Luisier, J. Leuthold, C. Hafner, 2015, 1508.07748.

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

M. Luisier, Gerhard Klimeck, S. Mehrotra, 2009, 2009 IEEE Workshop on Microelectronics and Electron Devices.

Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Suman Datta, Gerhard Klimeck, Mathieu Luisier, 2012 .

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

M. Luisier, Gerhard Klimeck, A. Paul, 2011, 1108.2551.

MEMS Plasmonics and Memristive Plasmonics for Optical Communications

M. Luisier, J. Leuthold, C. Haffner, 2020, 2020 European Conference on Optical Communications (ECOC).

Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs

I. Radu, M. Luisier, M. Heyns, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

First-principles simulations of 2-D semiconductor devices: Mobility, I-V characteristics, and contact resistance

M. Luisier, L. Novotný, A. Jain, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Full-band and atomistic simulation of realistic 40 nm InAs HEMT

G. Klimeck, M. Luisier, N. Kharche, 2008, 2008 IEEE International Electron Devices Meeting.

Investigation of Source Starvation in High-Transconductance III–V Quantum-Well MOSFETs

M. Luisier, D. Antoniadis, J. D. del Alamo, 2019, IEEE Transactions on Electron Devices.

Charge transport in semiconductors assembled from nanocrystal quantum dots

M. Luisier, V. Wood, M. H. Bani-Hashemian, 2019, Nature Communications.

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Adrian M. Ionescu, Luca Selmi, Heike Riel, 2013 .

Modeling the thermal conductivity of Si nanowires with surface roughness

Mathieu Luisier, Andreas Schenk, Kantawong Vuttivorakulchai, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Ab initio modeling of thermal transport through van der Waals materials

M. Luisier, S. Fiore, 2020, 2010.03011.

One-dimensional edge contacts to a monolayer semiconductor.

Lukas Novotny, Takashi Taniguchi, Kenji Watanabe, 2019, Nano letters.

Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

M. Luisier, J. Dupuy, S. Frégonèse, 2018, IEEE Transactions on Electron Devices.

Impact of Layer Alignment on the Behavior of MoS 2 − ZrS 2 Tunnel Field-Effect Transistors: An Ab Initio Study

Anh Khoa Augustin Lu, G. Pourtois, M. Luisier, 2017 .

Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs

Gerhard Tröster, Luisa Petti, Niko Münzenrieder, 2017, IEEE Transactions on Electron Devices.

An Atomistic Modelling Framework for Valence Change Memory Cells

M. Luisier, Manasa Kaniselvan, Marko Mladenovi'c, 2022, 2207.01095.

Dual-Gated WTe 2 /MoSe 2 van der Waals Tandem Solar Cells

M. Luisier, D. Logoteta, M. Lannoo, 2021 .

Inﬂuence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS 2 Transistors

M. Luisier, F. Ducry, C. Klinkert, 2022 .

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

P. Ajayan, T. Boykin, M. Luisier, 2013, Applied Physics Letters.

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

M. Luisier, J. Leuthold, F. Ducry, 2022, Advanced Electronic Materials.

Ab-initio modeling of CBRAM cells: From ballistic transport properties to electro-thermal effects

M. Luisier, J. Leuthold, F. Ducry, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Transport simulations with density-matrix-based real-time time-dependant density functional theory

M. Luisier, J. VandeVondele, S. Brück, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic Simulation of Phonon-Assisted Tunneling in Bulk-like Esaki Diodes

M. Luisier, A. Schenk, R. Rhyner, 2012 .

An ab initio study on resistance switching in hexagonal boron nitride

T. Grasser, M. Luisier, J. Leuthold, 2022, npj 2D Materials and Applications.

Memristor with optically tunable dynamics

M. Luisier, A. Emboras, K. Portner, 2022, 2022 Conference on Lasers and Electro-Optics (CLEO).

Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties

M. Luisier, V. Wood, D. Bozyigit, 2016, 1611.09930.

Dynamics of van der Waals charge qubit in two-dimensional bilayer materials: Ab initio quantum transport and qubit measurement

M. Luisier, T. Agarwal, Jiang Cao, 2022, Physical Review Research.

Approximate Euclidean lengths and distances beyond Johnson-Lindenstrauss

M. Luisier, Aleksandros Sobczyk, 2022, ArXiv.

Light-matter interactions in van der Waals photodiodes from first principles

M. Luisier, Jiang Cao, C. Klinkert, 2022, Physical Review B.

Bulk photovoltaic effect in partial overlap MoSe2-WSe

M. Luisier, C. Klinkert, S. Fiore, 2022, Solid-State Electronics.

Optical Transitions in Silver Indium Selenide Nanocrystals: Implications for Light-Emitting and Light-Imaging Applications

M. Luisier, V. Wood, G. Itskos, 2021, ACS Applied Nano Materials.

Effective mass OMEN based field effect transistor (FET) simulator

George A. Howlett, M. Luisier, Gerhard Klimeck, 2009 .

Electron–phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS2 mobility

M. Luisier, Youseung Lee, Jonathan Backman, 2022, Solid-State Electronics.

Density functional theory based analysis of the origin of traps at the InAs/Si hetero-interface

M. Luisier, A. Schenk, S. Sant, 2017 .

Ab initio modeling of thermal effects in 2D van der Waals materials

M. Luisier, Á. Szabó, Teute Bunjaku, 2021, 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Non-parabolic effective mass model for dissipative quantum transport simulations of III–V nano-devices

M. Luisier, R. Rhyner, M. Frey, 2022, Journal of Applied Physics.

Photon Emission by Silicon-Based Memristors

A. Bouhelier, M. Luisier, J. Leuthold, 2022, 2022 European Conference on Optical Communication (ECOC).

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.

M. Luisier, Manasa Kaniselvan, Marko Mladenovi'c, 2022, ACS nano.

Light-Controlled Switching in Electro-Optical Memristors

M. Luisier, A. Emboras, P. Ma, 2022, 2022 Conference on Lasers and Electro-Optics (CLEO).

An atomistic modelling framework for valence change memory cells

M. Luisier, Manasa Kaniselvan, Marko Mladenovi'c, 2022, Solid-State Electronics.

M. Luisier, D. Passerone, Angelo Valli, 2022, 2301.00282.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Heike Riel, Siegfried Karg, Mathieu Luisier, 2017, Nano letters.

Microcanonical RT-TDDFT simulations of realistically extended devices.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2018, The Journal of chemical physics.

Current density and continuity in discretized models

T. Boykin, M. Luisier, Gerhard Klimeck, 2011 .

Modeling and Simulation Approaches for Gate Current Computation

M. Luisier, A. Spinelli, P. Palestri, 2013 .

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, 1009.6188.

Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures

M. Luisier, M. Nomura, M. Bescond, 2020, 2007.14046.

Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers

Joost VandeVondele, Mathieu Luisier, Mauro Calderara, 2015, SC15: International Conference for High Performance Computing, Networking, Storage and Analysis.

Atomistic modeling of anharmonic phonon-phonon scattering in nanowires

M. Luisier, 2012 .

A Parallel Implementation of Electron-Phonon Scattering in Nanoelectronic Devices up to 95k Cores

Mathieu Luisier, M. Luisier, 2010, 2010 ACM/IEEE International Conference for High Performance Computing, Networking, Storage and Analysis.

Numerical strategies towards peta-scale simulations of nanoelectronics devices

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, Parallel Comput..

A multi-level parallel simulation approach to electron transport in nano-scale transistors

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2008, 2008 SC - International Conference for High Performance Computing, Networking, Storage and Analysis.

Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance

M. Luisier, V. Wood, S. Pratsinis, 2015, Advanced science.

Influence of disorder and surface roughness on the electrical and thermal properties of lithiated silicon nanowires

M. Luisier, D. Bauer, 2020 .

Structural and electronic properties of lithiated Si nanowires: An ab initio study

M. Luisier, Teute Bunjaku, D. Bauer, 2019, Physical Review Materials.

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

M. Luisier, Gerhard Klimeck, A. Paul, 2011, 1106.1935.

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors

M. Luisier, D. Logoteta, M. Lannoo, 2019, Materials.

Atomic Scale Photodetection Enabled by a Memristive Junction.

Juerg Leuthold, Arne Josten, Yannick Salamin, 2018, ACS nano.

Platinum contacts for 9-atom-wide armchair graphene nanoribbons

M. Luisier, D. Passerone, P. Ruffieux, 2023, Applied Physics Letters.

Accurate Six-Band Nearest-Neighbor Tight- Binding Model for the π-Bands of Bulk Graphene and Graphene Nanoribbons

T. Boykin, M. Luisier, Gerhard Klimeck, 2011, 1102.1718.

Charge transport in semiconductors assembled from nanocrystal quantum dots

M. Luisier, V. Wood, M. H. Bani-Hashemian, 2019, Nature Communications.

Tuning Electron-Phonon Interactions in Nanocrystals through Surface Termination.

M. Luisier, V. Wood, D. Bozyigit, 2018, Nano letters.

Soft surfaces of nanomaterials enable strong phonon interactions

M. Luisier, V. Wood, Olesya Yarema, 2016, Nature.

Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green’s function study

M. Luisier, E. O’Reilly, S. Schulz, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

M. Luisier, Gerhard Klimeck, A. Paul, 2010, 2010 14th International Workshop on Computational Electronics.

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

Mark S. Lundstrom, S. Datta, M. Luisier, 2009, 0909.5222.

Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications.

M. Luisier, J. Leuthold, C. Haffner, 2021, ACS nano.

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

M. Luisier, B. Offrein, S. Abel, 2020, ACS applied materials & interfaces.

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

M. Lanza, T. Grasser, M. Waltl, 2021, Nature Electronics.

Opto-electronic memristors: Prospects and challenges in neuromorphic computing

Juerg Leuthold, Ueli Koch, Mathieu Luisier, 2020 .

Electron Transport through Metal/MoS2 Interfaces: Edge- or Area-Dependent Process?

M. Luisier, L. Novotný, Á. Szabó, 2019, Nano letters.

Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors

M. Luisier, F. Ducry, C. Klinkert, 2022, Materials.

On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

M. Lanza, T. Grasser, M. Waltl, 2020, 2008.04144.

Three-dimensional quantum simulation of silicon nanowires

M. Luisier, A. Schenk, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

M. Luisier, A. Ionescu, M. Cavalieri, 2020, npj 2D Materials and Applications.

2-D Materials for Ultra-Scaled Field-Effect Transistors: Hundred Candidates under the Ab Initio Microscope.

M. Luisier, N. Marzari, D. Campi, 2020, ACS nano.

Light from van der Waals quantum tunneling devices

M. Luisier, Kenji Watanabe, T. Taniguchi, 2018, Nature Communications.

Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport

M. Luisier, D. Logoteta, M. Lannoo, 2017 .

A computationally efficient non-parabolic bandstructure model for quantum transport simulations

M. Luisier, A. Ziegler, Lee Smith, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Yang Liu, Mehdi Salmani Jelodar, G. Klimeck, 2012, IEEE Transactions on Electron Devices.

A data-centric approach to extreme-scale ab initio dissipative quantum transport simulations

Alexandros Nikolaos Ziogas, T. Hoefler, Timo Schneider, 2019, SC.

Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires

M. Luisier, A. Schenk, K. Vuttivorakulchai, 2019, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Effect of stacking faults and surface roughness on the thermal conductivity of InAs nanowires

M. Luisier, K. Vuttivorakulchai, A. Schenk, 2018, Journal of Applied Physics.

Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires.

Dimos Poulikakos, Mathieu Luisier, Reto Rhyner, 2017, Nano letters.

Thermal transport and Matthiessen's rule in ultra-scaled Si nanowires

Mathieu Luisier, M. Luisier, 2013 .

Multiscale Modeling of Metal-Oxide-Metal Conductive Bridging Random-Access Memory Cells: From Ab Initio to Finite-Element Calculations

M. Luisier, J. Leuthold, F. Ducry, 2023, Physical Review Applied.

Multiscale Metrology and Optimization of Ultra-Scaled

M. Luisier, Gerhard Klimeck, Daehyun Kim, 2010 .

Multidimensional noise model and simulation of VCSEL devices

Mathieu Luisier, Bernd Witzigmann, Matthias Streiff, 2005, SPIE OPTO.

Charge Transport in Semiconductors Assembled from Nanocrystals

Mohammad Hossein Bani-Hashemian, Mathieu Luisier, Vanessa Wood, 2019, 1909.09739.

A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations

M. Luisier, A. Ziegler, Lee Smith, 2016, IEEE Transactions on Electron Devices.

Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors

A. Szabo, M. Luisier, M. Luisier, 2013, IEEE Transactions on Electron Devices.

Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

M. Luisier, Gerhard Klimeck, S. Mehrotra, 2010, 2010 IEEE Workshop on Microelectronics and Electron Devices.

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

M. Luisier, Gerhard Klimeck, S. Mehrotra, 2010, IEEE Electron Device Letters.

Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

M. Luisier, Gerhard Klimeck, S. Mehrotra, 2009, 2009 International Semiconductor Device Research Symposium.

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2009, 2009 13th International Workshop on Computational Electronics.

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

N. Singh, G. Lo, D. Kwong, 2009, IEEE Electron Device Letters.

A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

M. Luisier, A. Schenk, A. Esposito, 2007, 2007 International Semiconductor Device Research Symposium.

Electronic structure and transmission characteristics of SiGe nanowires

Gerhard Klimeck, Mathieu Luisier, Timothy B. Boykin, 2008 .

A generalized Poisson solver for first-principles device simulations.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2016, The Journal of chemical physics.

Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures

A. Lell, B. Witzigmann, M. Luisier, 2006, IEEE Photonics Technology Letters.

Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-Effect Transistors

M. Luisier, Youseung Lee, C. Klinkert, 2021, IEEE Electron Device Letters.

Atomistic analysis of band-to-band tunnelling in direct-gap $\mathrm{Ge}_{1-X}\mathrm{Sn}_{x}$ group-IV alloys

M. Luisier, E. O’Reilly, C. A. Broderick, 2020, 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

M. Luisier, Gerhard Klimeck, 2008, 2008 8th IEEE Conference on Nanotechnology.

FinFET to nanowire transition at 5nm design rules

M. Luisier, V. Moroz, Munkang Choi, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Ferroelectric‐Like Charge Trapping Thin‐Film Transistors and Their Evaluation as Memories and Synaptic Devices

G. Tröster, N. Münzenrieder, M. Luisier, 2017 .

Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

Gerhard Tröster, Luisa Petti, Niko Münzenrieder, 2016 .

Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

Asen Asenov, Vihar P. Georgiev, Mathieu Luisier, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scattering

M. Luisier, Keun-Ho Lee, Hong-hyun Park, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering

M. Luisier, Keun-Ho Lee, Hong-hyun Park, 2017, IEEE Electron Device Letters.

Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs

M. Luisier, A. Schenk, H. Carrillo-Nuñez, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Mathieu Luisier, Andreas Schenk, Hamilton Carrillo-Nunez, 2015 .

Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Andreas Schenk, Hamilton Carrillo-Nunez, Mathieu Luisier, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Simulation study of nanowire tunnel FETs

M. Luisier, M. Luisier, A. Schenk, 2012, 70th Device Research Conference.

Design of High-Performance InAs–Si Heterojunction 2D–2D Tunnel FETs With Lateral and Vertical Tunneling Paths

M. Luisier, A. Schenk, H. Carrillo-Nuñez, 2016, IEEE Transactions on Electron Devices.

Thermal properties of disordered LixMoS2 : An ab initio study

M. Luisier, Teute Bunjaku, 2018, Physical Review Materials.

Circuit-aware Device Modeling of Energy-efficient Monolayer WS$_2$ Trench-FinFETs

M. Luisier, T. Agarwal, Youseung Lee, 2021, 2104.07891.

Efficient and accurate defect level modelling in monolayer MoS2 via GW+DFT with open boundary conditions

M. Luisier, D. Passerone, Youseung Lee, 2022, Solid-State Electronics.

Efficient and accurate defect level modelling in monolayer MoS$_2$ via GW+DFT with open boundary conditions

M. Luisier, D. Passerone, Youseung Lee, 2022, 2206.14512.

Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime

M. Luisier, P. Lenarczyk, M. Luisier, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and d

M. Luisier, Gerhard Klimeck, A. Paul, 2011 .

Multiband tight-binding model for strained and bilayer graphene from DFT calculations

T. Boykin, M. Luisier, Gerhard Klimeck, 2012, 2012 15th International Workshop on Computational Electronics.

Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

O. Schenk, M. Luisier, 2013, IEEE Transactions on Electron Devices.

Charge trapping mechanism leading to Sub-60 mV/dec-Swing Field-Effect Transistors

M. Luisier, G. Salvatore, L. Petti, 2019 .

Radio Frequency Performance of High Mobility 2D Monolayer Au2S-based Transistors

M. Luisier, T. Agarwal, Jiang Cao, 2023, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Christophe Caillaud, Hervé Bertin, Cristell Maneux, 2021, Applied Sciences.

Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz

M. Luisier, S. Frégonèse, C. Maneux, 2020, IEEE Transactions on Electron Devices.

A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

M. Luisier, S. Frégonèse, C. Maneux, 2019, IEEE Transactions on Electron Devices.

Efficient algorithms for large-scale quantum transport calculations.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2017, The Journal of chemical physics.

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Asen Asenov, Vihar P. Georgiev, Fikru Adamu-Lema, 2018, IEEE Electron Device Letters.

Atomistic Modeling of the Phonon Dispersion in Free-standing Ï¿¿100ï¿¿ Si Nanowires

M. Luisier, Gerhard Klimeck, A. Paul, 2022 .

Electronic Properties of Lithiated SnO-based Anode Materials

M. Luisier, A. Pedersen, Teute Bunjaku, 2017, 1804.09433.

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

M. Luisier, A. Davydov, A. Franklin, 2023, Advanced materials.

Empirical potential optimization for the investigation of lithiation-delithiation cycles of amorphous Si nanowires

M. Luisier, Teute Bunjaku, J. Godet, 2020 .

First-principles approach to electric polarization and dielectric constant calculations using generalized Wannier functions

M. Luisier, P. Lenarczyk, 2019, 1910.09015.

MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts

I. Radu, M. Luisier, G. Groeseneken, 2019, Advanced Functional Materials.

Ultra-steep-slope transistor enabled by an atomic memristive switch

Juerg Leuthold, Marco Eppenberger, Mathieu Luisier, 2020, NanoScience + Engineering.

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

M. Luisier, J. Leuthold, Y. Fedoryshyn, 2019, Communications Physics.

Microscopic analysis of optical gain in InGaN/GaN quantum wells

Werner Wegscheider, Alfred Lell, Mathieu Luisier, 2006 .

Exchange interactions and intermolecular hybridization in a spin-1/2 nanographene dimer

M. Luisier, D. Passerone, P. Ruffieux, 2023, 2307.09930.

Efficient partitioning of surface Green’s function: toward ab initio contact resistance study.

M. Luisier, D. Passerone, Youseung Lee, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Approximate Euclidean lengths and distances beyond Johnson-Lindenstrauss

M. Luisier, Aleksandros Sobczyk, 2022, NeurIPS.

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, Computing in Science & Engineering.

From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

M. Luisier, Gerhard Klimeck, 2008, 2008 IEEE International Electron Devices Meeting.

Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers

Mathieu Luisier, Ulrich T. Schwarz, Bernd Witzigmann, 2006, SPIE Photonics Europe.

A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN

Gerhard Klimeck, Faisal Saied, Hansang Bae, 2008 .

Atomic-Scale Photonic Memristive and Nano-Opto-Electro-Mechanical Devices Enabled by Plasmonics

M. Luisier, J. Leuthold, C. Haffner, 2020 .

Synthesis and Electronic Structure of Mid-Infrared Absorbing Cu3SbSe4 and CuxSbSe4 Nanocrystals

M. Luisier, V. Wood, Olesya Yarema, 2023, Chemistry of materials : a publication of the American Chemical Society.

Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

W. Fichtner, M. Luisier, Gerhard Klimeck, 2007 .

Efficient quantum mechanical simulation of band-to-band tunneling

A. Gnudi, M. Luisier, P. Palestri, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation

M. Luisier, R. Rhyner, 2013 .

Fast Methods for Computing Selected Elements of the Green's Function in Massively Parallel Nanoelectronic Device Simulations

Olaf Schenk, Mathieu Luisier, Andrey Kuzmin, 2013, Euro-Par.

Atomic Scale Plasmonic Switch.

M. Luisier, J. Leuthold, C. Hafner, 2015, Nano letters.

On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study

Anh Khoa Augustin Lu, G. Pourtois, I. Radu, 2017 .

Edge Contacts to Atomically Precise Graphene Nanoribbons

M. Luisier, T. Taniguchi, C. Schönenberger, 2023, ACS nano.

Effect of Electron-phonon Scattering on the Thermal Conductivity of Si Nanowires

Andreas Schenk, Mathieu Luisier, Kantawong Vuttivorakulchai, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).