E. Lusky
发表
B. Eitan,
E. Lusky,
Y. Shacham-Diamand,
2001,
IEEE Electron Device Letters.
B. Eitan,
L. Larcher,
P. Pavan,
2002
.
B. Eitan,
E. Lusky,
Y. Shacham-Diamand,
2002,
IEEE Electron Device Letters.
Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
B. Eitan,
E. Lusky,
Y. Shacham-Diamand,
2003
.
Boaz Eitan,
I. Bloom,
Assaf Shappir,
2004
.
Boaz Eitan,
I. Bloom,
Assaf Shappir,
2004
.
M. Janai,
G. Cohen,
B. Eitan,
2004,
IEEE Transactions on Device and Materials Reliability.
B. Eitan,
A. Shappir,
I. Bloom,
2004,
IEEE Transactions on Electron Devices.
M. Janai,
G. Cohen,
B. Eitan,
2004,
IEEE Transactions on Device and Materials Reliability.
Yosi Shacham-Diamand,
Boaz Eitan,
I. Bloom,
2004
.
B. Eitan,
E. Lusky,
Y. Shacham-Diamand,
2002
.