J. Lien

Corner-field induced drain leakage in thin oxide MOSFETs

Chi Chang, J. Lien, 1987, 1987 International Electron Devices Meeting.

Degradations due to hole trapping in flash memory cells

J. Lien, S. Haddad, C. Chang, 1989, IEEE Electron Device Letters.

Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models

J. Lien, P. Fang, J. Peng, 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

Short channel enhanced degradation during discharge of flash EEPROM memory cell

Chi Chang, J. Lien, S. Haddad, 1995, Proceedings of International Electron Devices Meeting.

Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices

S. Haddad, J. Lien, S. Haddad, 1988, IEEE Electron Device Letters.

An Al p‐silicon MOS photovoltaic cell

E. J. Charlson, J. Lien, E. Charlson, 1975 .